Patent Application
20130168231
The present disclosure relates generally to semiconductor manufacturing and in particular to radio frequency (RF) plasma etch in a plasma deposition chamber with a biasable pedestal for full wafer and combinatorial processing.
The present disclosure relates to co-pending patent application Ser. No. 13/316,882, filing date Dec. 12, 2011, entitled “Combinatorial RF bias method for PVD”, assigned to the same assignee, which is hereby incorporated by reference.
Semiconductor processing or manufacturing techniques are used in the manufacture of integrated circuits (IC) semiconductor devices, flat panel displays, optoelectronics devices, data storage devices, magneto electronic devices, magneto optic devices, packaged devices, and the like.
Deposition processes are commonly used in semiconductor manufacturing to deposit a layer of material onto a substrate. Physical vapor deposition (PVD) is one example of a deposition process, and sputter deposition or sputtering is a common physical vapor deposition method. In sputtering, ions are ejected from a target material by high-energy particle bombardment and then deposited onto the substrate using plasma. For site isolated deposition (i.e., deposition on a site isolated region of the substrate), PVD tools typically include an aperture through which the sputtered ions are targeted. While PVD tools are commonly used in the industry, they are limited to performing specific processes and do not permit much flexibility.
As feature sizes continue to shrink on semiconductor devices, improvements, whether in materials, unit processes, or process sequences, are continually being sought for in these semiconductor processes. In order to identify different materials, evaluate different unit process conditions or parameters, or evaluate different sequencing and integration of processes, and combinations thereof, it is desirable to process different regions of the substrate differently. This capability is called “combinatorial processing”, and it is generally not performed with tools that are designed specifically for conventional full substrate processing. It is also desirable to subject localized regions of the substrate to different processing conditions (e.g., localized deposition) in one step of a sequence followed by subjecting the full substrate to a similar processing condition (e.g., full substrate deposition) in another step.
Further developments and improvements, particularly innovations that enable flexibility and increased throughput, and provide combinatorial processing, in semiconductor manufacturing are needed.
The following summary of the invention is included in order to provide a basic understanding of some aspects and features of the invention. This summary is not an extensive overview of the invention and as such it is not intended to particularly identify key or critical elements of the invention or to delineate the scope of the invention. Its sole purpose is to present some concepts of the invention in a simplified form as a prelude to the more detailed description that is presented below.
In some embodiments, the present invention discloses a biasable substrate support for full substrate and combinatorial processing. The biasable pedestal can be used in an electrostatic chuck (ESC), for example, for substrate precleaning or plasma treating.
In some embodiments, the biasable pedestal can be used in a physical vapor deposition (PVD) chamber, for example, a chamber with one or more multiple sputter guns, enabling both PVD sputter deposition and sputter etch, eliminating the need for a separate dry etch chamber.
In some embodiments, a substrate shield having apertures is disposed on the substrate so that the bottoms of the apertures are flushed with the bottom of lower shield so that a small, constant, dark-space gap is ensured between the grounded shield and the entire substrate (except the area exposed by the aperture holes). The width of the gap is preferably smaller than a width of the plasma sheath, for example, less than 3 mm. Using the substrate shield, a typical PVD chamber, e.g., one with one or multiple sputter guns, can be used for Ar+ etch by applying RF power to the ESC biasable pedestal and igniting plasma with Ar gas flow. Alternatively, oxygen or nitrogen gases can be used. The PVD chamber becomes a dual-purpose chamber, capable of both sputter deposition and RF etch.
In some embodiments, the present invention discloses a method for combinatorial processing a substrate characterized in that site-isolated sputter deposition and site-isolated plasma etching are performed in the same process chamber. The method further comprises shielding the substrate surface while exposing at least a site isolated region of the substrate, wherein the shield forms a small dark space gap with the substrate to reduce or eliminate any plasma formation within the gap.
In some embodiments, the present invention discloses a method for combinatorial processing a substrate, comprising exposing a site isolated region of the substrate, and sputter etching the site isolated region before sputter depositing material on the site isolated region.
The accompanying drawings, which are incorporated into and constitute a part of this specification, illustrate one or more examples of embodiments and, together with the description of example embodiments, serve to explain the principles and implementations of the embodiments.
Some embodiments of the invention are directed to combined sputter deposition and RF plasma etch processes being carried out in one process chamber. The chamber may include multiple sputter guns. An aperture and a grounded shield are placed above the substrate. The bottom of the aperture is flush with the bottom of the lower shield so that a small, constant dark-space gap is formed between the substrate and the aperture. A dielectric material may be used in the dark-space gap. The substrate is supported by a substrate support, such as an electrostatic chuck. An RF bias power can be applied to the electrostatic chuck, and plasma may be ignited with one or more sputter guns while performing RF plasma etch in the chamber. The chamber is capable of performing both PVD sputter deposition and plasma etch, eliminating the need for a separate plasma etch chamber.
The manufacture of semiconductor devices entails the integration and sequencing of many unit processing steps. As an example, semiconductor manufacturing typically includes a series of processing steps such as cleaning, surface preparation, deposition, patterning, etching, thermal annealing, and other related unit processing steps. The precise sequencing and integration of the unit processing steps enables the formation of functional devices meeting desired performance metrics such as efficiency, power production, and reliability.
As part of the discovery, optimization and qualification of each unit process, it is desirable to be able to i) test different materials, ii) test different processing conditions within each unit process module, iii) test different sequencing and integration of processing modules within an integrated processing tool, iv) test different sequencing of processing tools in executing different process sequence integration flows, and combinations thereof in the manufacture of devices such as semiconductor devices. In particular, there is a need to be able to test i) more than one material, ii) more than one processing condition, iii) more than one sequence of processing conditions, iv) more than one process sequence integration flow, and combinations thereof, collectively known as “combinatorial process sequence integration”, on a single substrate without the need of consuming the equivalent number of monolithic substrates per material(s), processing condition(s), sequence(s) of processing conditions, sequence(s) of processes, and combinations thereof. This can greatly improve both the speed and reduce the costs associated with the discovery, implementation, optimization, and qualification of material(s), process(es), and process integration sequence(s) required for manufacturing.
Systems and methods for High Productivity Combinatorial (HPC) processing are described in U.S. Pat. No. 7,544,574 filed on Feb. 10, 2006, U.S. Pat. No. 7,824,935 filed on Jul. 2, 2008, U.S. Pat. No. 7,871,928 filed on May 4, 2009, U.S. Pat. No. 7,902,063 filed on Feb. 10, 2006, and U.S. Pat. No. 7,947,531 filed on Aug. 28, 2009, the entireties of which are all herein incorporated by reference. Systems and methods for HPC processing are further described in U.S. patent application Ser. No. 11/352,077 filed on Feb. 10, 2006, claiming priority from Oct. 15, 2005, U.S. patent application Ser. No. 11/419,174 filed on May 18, 2006, claiming priority from Oct. 15, 2005, U.S. patent application Ser. No. 11/674,132 filed on Feb. 12, 2007, claiming priority from Oct. 15, 2005, and U.S. patent application Ser. No. 11/674,137 filed on Feb. 12, 2007, claiming priority from Oct. 15, 2005, the entireties of which are all herein incorporated by reference.
HPC processing techniques have been successfully adapted to wet chemical processing such as etching, texturing, polishing, cleaning, etc. HPC processing techniques have also been successfully adapted to deposition processes such as sputtering, atomic layer deposition (ALD), and chemical vapor deposition (CVD).
For example, thousands of materials are evaluated during a materials discovery stage, 102. Materials discovery stage, 102, is also known as a primary screening stage performed using primary screening techniques. Primary screening techniques may include dividing substrates into coupons and depositing materials using varied processes. The materials are then evaluated, and promising candidates are advanced to the secondary screen, or materials and process development stage, 104. Evaluation of the materials is performed using metrology tools such as electronic testers and imaging tools (i.e., microscopes).
The materials and process development stage, 104, may evaluate hundreds of materials (i.e., a magnitude smaller than the primary stage) and may focus on the processes used to deposit or develop those materials. Promising materials and processes are again selected, and advanced to the tertiary screen or process integration stage, 106, where tens of materials and/or processes and combinations are evaluated. The tertiary screen or process integration stage, 106, may focus on integrating the selected processes and materials with other processes and materials.
The most promising materials and processes from the tertiary screen are advanced to device qualification, 108. In device qualification, the materials and processes selected are evaluated for high volume manufacturing, which normally is conducted on full substrates within production tools, but need not be conducted in such a manner. The results are evaluated to determine the efficacy of the selected materials and processes. If successful, the use of the screened materials and processes can proceed to pilot manufacturing, 110.
The schematic diagram, 100, is an example of various techniques that may be used to evaluate and select materials and processes for the development of new materials and processes. The descriptions of primary, secondary, etc. screening and the various stages, 102-110, are arbitrary and the stages may overlap, occur out of sequence, be described and be performed in many other ways.
It will be appreciated that various other combinations of conventional and combinatorial processes can be included in the processing sequence with regard to
Under combinatorial processing operations the processing conditions at different regions can be controlled independently. Consequently, process material amounts, reactant species, processing temperatures, processing times, processing pressures, processing flow rates, processing powers, processing reagent compositions, the rates at which the reactions are quenched, deposition order of process materials, process sequence steps, hardware details, etc., can be varied from region to region on the substrate. Thus, for example, when exploring materials, a processing material delivered to a first and second region can be the same or different. If the processing material delivered to the first region is the same as the processing material delivered to the second region, this processing material can be offered to the first and second regions on the substrate at different concentrations. In addition, the material can be deposited under different processing parameters. Parameters which can be varied include, but are not limited to, process material amounts, reactant species, processing temperatures, processing times, processing pressures, processing flow rates, processing powers, processing reagent compositions, the rates at which the reactions are quenched, atmospheres in which the processes are conducted, an order in which materials are deposited, hardware details of the gas distribution assembly, etc. It will be appreciated that these process parameters are exemplary and not meant to be an exhaustive list as other process parameters commonly used in semiconductor manufacturing may be varied.
Any type of chamber or combination of chambers may be implemented and the description herein is merely illustrative of one possible combination and not meant to limit the potential chamber or processes that can be supported to combine combinatorial processing or combinatorial plus conventional processing of a substrate or wafer. In some embodiments, a centralized controller, i.e., computing device 316, may control the processes of the HPC system. Further details of one possible HPC system are described in U.S. application Ser. Nos. 11/672,478 and 11/672,473, the entire disclosures of which are herein incorporated by reference. In a HPC system, a plurality of methods may be employed to deposit material upon a substrate employing combinatorial processes.
According to one aspect of the invention, a process chamber for combinatorial processing of a substrate is provided that includes one or more sputter targets (such as sputter guns); a power source coupled to the one or more sputter guns; a substrate support; a radio frequency (RF) power source coupled to the substrate support; and a grounded shield comprising an aperture disposed between the substrate support and the one or more sputter guns to form a dark-space gap between the substrate support and the aperture. The aperture may be configured to allow sputter deposition or etch of an isolated site on the substrate.
The process chamber may further include a plasma confinement ring between the substrate support and the grounded shield. The plasma confinement ring may be thicker than substrate. The plasma confinement ring fills the dark-space gap between the substrate support and the grounded shield.
The process chamber may further include a dielectric material in the dark-space gap. The dielectric material may be coated with a metal layer for grounding and RF shielding. The dark-space gap may be between about 1 mm and about 3 mm.
The process chamber may further include a controller to selectively apply power to the one or more sputter guns from the power source and apply power to bias the substrate support from a RF power source. The controller may be configured to control the power source and the RF power source to perform one or both of plasma etch and plasma deposition on an isolated site on the substrate. In some embodiments, other sputter mechanisms can be used instead of the sputter guns.
According to another aspect of the invention, a semiconductor system for combinatorial processing of a substrate is provided that includes a process chamber having a dark-space region configured to prevent plasma leak in a region adjacent the substrate. The process chamber can be configured to perform both plasma etch and sputter deposition on an isolated site on the substrate. The process chamber may include a dielectric material in the dark-space gap. The dark-space region may be between about 1 mm and about 3 mm.
The process chamber may include a plasma confinement ring positioned around the substrate to prevent plasma leak in a region adjacent the substrate. The plasma confinement ring may be thicker than the substrate. The plasma confinement ring may be a conductive material or ceramic material which may or may not be partially coated with a metal layer.
According to a further aspect of the invention, a method of combinatorial processing of a substrate is provided in which site-isolated sputter deposition and plasma etching are carried out in the same process chamber. The site-isolated sputter deposition may be site-isolated co-sputtering deposition. Cleaning, site-isolated sputter deposition and plasma etching may be carried out in the same process chamber. Cleaning, site-isolated sputter deposition and plasma etching, and full wafer sputter deposition may be carried out in the same process chamber.
The processing chamber 400 includes a bottom chamber portion 402 disposed under a top chamber portion 418. A substrate support 404 is provided within the bottom chamber portion 402. The substrate support 404 is configured to hold a substrate 406 disposed thereon and can be any known substrate support, including but not limited to a vacuum chuck, electrostatic chuck or other known mechanisms.
The substrate 406 may be a conventional 200 mm and 300 mm wafers, or any other larger or smaller size. In other embodiments, substrate 406 may be a square, rectangular, or other shaped substrate. The substrate 406 may be a blanket substrate, a coupon (e.g., partial wafer), or even a patterned substrate having predefined regions. In some embodiments, substrate 406 may have regions defined through site-isolated processing as described herein.
The top chamber portion 418 of the chamber 400 includes a process kit shield 412, which defines a confinement region over a portion of the substrate 406. As shown in
The base of process kit shield 412 includes an aperture 414 through which a surface of substrate 406 is exposed for deposition processing. The chamber may also include an aperture shutter 420 which is moveably disposed over the base of process kit shield 412. The aperture shutter 420 slides across a bottom surface of the base of process kit shield 412 in order to cover or expose aperture 414. In some embodiments, the aperture shutter 420 is controlled by an arm extension (not shown) which moves the aperture shutter to expose or cover aperture 414.
As shown in
The sputter guns 416 are moveable in a vertical direction so that one or both of the guns may be lifted from the slots of the shield. In some embodiments, sputter guns 416 are oriented or angled so that a normal reference line extending from a planar surface of the target of the process gun is directed toward an outer periphery of the substrate in order to achieve good uniformity for full substrate deposition film. The target/gun tilt angle depends on the target size, target-to-substrate spacing, target material, process power/pressure, etc. and the tilt angle may be varied.
The chamber may also include a gun shutter 422, which seals off the deposition gun when the process gun 416 is not needed during processing. The gun shutter 422 allows one or more of the sputter guns 416 to be isolated from certain processes as needed. It will be appreciated that the gun shutter 422 may be integrated with the top of the process kit shield 412 to cover the opening as the process gun 416 is lifted or individual gun shutter 422 can be used for each process gun 416.
The sputter guns 416 may be fixed to arm extensions 416a to vertically move sputter guns 416 toward or away from top chamber portion 418. The arm extensions 416a may be attached to a drive, e.g., lead screw, worm gear, etc. The arm extensions 416a may be pivotally affixed to sputter guns 416 to enable the sputter guns to tilt relative to a vertical axis. In some embodiments, sputter guns 416 tilt toward aperture 414 when performing combinatorial processing and tilt toward a periphery of the substrate being processed when performing full substrate processing. It will be appreciated that sputter guns 416 may alternatively tilt away from aperture 414.
The chamber 400 also includes power sources 424 and 426. Power source 424 provides power for sputter guns 416, and power source 426 provides RF power to bias the substrate support 404. In some embodiments, the output of the power source 426 is synchronized with the output of power source 424. The power source, 424, may output a direct current (DC) power supply, a direct current (DC) pulsed power supply, a radio frequency (RF) power supply or a DC-RF imposed power supply. The power sources 424 and 426 may be controlled by a controller (not shown) so that both deposition and etch can be performed in the chamber 400, as will be described in further detail hereinafter.
The chamber 400 may also include an auxiliary magnet 428 disposed around an external periphery of the chamber 400. The auxiliary magnet 428 is located between the bottom surface of sputter guns 416 and proximity of a substrate support 404. The auxiliary magnet may be positioned proximate to the substrate support 404, or, alternatively, integrated within the substrate support 404. The magnet 428 may be a permanent magnet or an electromagnet. In some embodiments, the auxiliary magnet 428 improves ion guidance as the magnetic field above substrate 406 is re-distributed or optimized to guide the metal ions. In some other embodiments, the auxiliary magnet 428 provides more uniform bombardment of ions and electrons to the substrate and improves the uniformity of the film being deposited.
The substrate support 404 is capable of both rotating around its own central axis 408 (referred to as “rotation” axis), and rotating around an exterior axis 410 (referred to as “revolution” axis). Such dual rotary substrate supports can be advantageous for combinatorial processing using site-isolated mechanisms. Other substrate supports, such as an XY table, can also be used for site-isolated deposition. In addition, substrate support 404 may move in a vertical direction. It will be appreciated that the rotation and movement in the vertical direction may be achieved through one or more known drive mechanisms, including, for example, magnetic drives, linear drives, worm screws, lead screws, differentially pumped rotary feeds, and the like.
Through the rotational movement of the process kit shield 412 and the corresponding aperture 414 in the base of the process kit shield, in combination with the rotational movement of substrate support 404, any region of a substrate 406 may be accessed for combinatorial processing. The dual rotary substrate support 404 allows any region (i.e., location or site) of the substrate 406 to be placed under the aperture 414; hence, site-isolated processing is possible at any location on the substrate 406. It will be appreciated that removal of the aperture 414 and aperture shutter 420 from the chamber 400 or away from the substrate 406 and enlarging the bottom opening of the process kit shield 412 allows for processing of the full substrate.
As described above, embodiments of the invention allow for both sputter deposition and plasma etch to be performed in the same process chamber (e.g., chamber 400). In some embodiments of the invention, the chamber 400 is configured so that both sputter deposition and plasma etch can be performed in the chamber 400, and, in particular, the chamber 400 is configured to allow for both site-isolated sputter deposition and plasma etch to be performed in the chamber. It will be appreciated that full wafer sputter deposition and plasma etch may also be performed in the chamber 400 by removing the aperture 414 away from the chamber 400 or moving the aperture 414 away from the substrate 406 and enlarging the bottom opening of the process kit shield 412.
In particular, plasma etch may be performed in the chamber 400 by applying RF power from the power source 426 to bias the substrate support (e.g., an electrostatic chuck) 404 with or without DC plasma near the sputter target. Plasma is then ignited on top of the substrate 406, which is confined by the aperture 414 and shield 412 above the substrate 406 so that site-isolated plasma etch of the substrate 406 can occur in the chamber 400. Sputter deposition may similarly be performed in the chamber 400 by applying DC power from the power source 424 to the sputter gun(s) 416. Three modes of processing can be performed in chamber 400: sputter deposition only, simultaneous sputter deposition and plasma etch, and plasma etch only.
In one embodiment, the RF power is any value or range of values between about 50 W and about 2000 W. In some embodiments, DC or pulsed DC power applied to sputter sources can have peak powers as high as 10 kW, for example, for high metal ionization in sputter deposition. The RF power frequency may be any value or range of values between about 40 kHz and about 60 MHz. It will be appreciated that the RF power frequency may be less than about 40 kHz or greater than about 60 MHz.
In chamber 400, plasma etch can be used to clean the substrate 406. An exemplary process according to some embodiments of the invention may begin by cleaning the substrate, performing site-isolated sputter deposition, performing site-isolated plasma etch, performing full substrate sputter deposition and then performing a subsequent full substrate plasma etch, all within the same chamber (e.g., chamber 400). Another exemplary process according to some embodiments of the invention may begin by cleaning the substrate, performing a full substrate sputter deposition, performing site-isolated sputter deposition, performing site-isolated plasma etch, performing full substrate sputter deposition, and performing a subsequent full substrate plasma etch, all within the same chamber (e.g., chamber 400). It will be appreciated that the above processes are merely exemplary and that processes according to the invention may include fewer steps or additional steps and that the order of the steps may vary.
In some embodiments, the present invention discloses methods and systems for plasma processing site isolated regions on a substrate, wherein the rest of the substrate is shielded from the plasma environment. In some embodiments, the present invention further discloses methods and systems for a shield assembly to prevent stray plasma on the unwanted portion of the substrate, e.g., the substrate area outside the site isolated regions that is not intended to be processed.
Those skilled in the art will understand that a plasma formed between the substrate surface and the base of the process kit shield would be undesirable. Firstly, much of the RF power applied to the substrate would be directed away from the region under the aperture, 514, and the benefits of the RF bias voltage would not be realized. Secondly, the plasma formed between the substrate surface and the base of the process kit shield would damage regions of the substrate that were not intended to be processed (i.e. those regions not under the aperture).
In some embodiments, the present invention discloses methods and systems to eliminate the plasma formation between the substrate and the process shield. Surrounding the plasma is a sheath region (e.g., dark space), for example, a sheath region near the substrate surface and another sheath region near the shield area. In some embodiments, the present invention discloses minimizing the gap between the shield and the substrate to prevent the formation of a plasma, for example, by restricting the distance between the shield and the substrate to be less than the width of the sheath regions. The space can be restricted by placing a conductive shield within a short distance (i.e. a gap) from the substrate, such as less than about 3 mm. The separation between the shield and the substrate is preferably uniform, for example, to prevent any concentration of electric field. Alternatively, the space can be restrictive by placing a ceramic material between the shield and the substrate.
In some embodiments, a conductive shield can be used to restrict the space between the shield and the substrate.
A dark space gap 538 is formed between the substrate 406 and the aperture disc 534, and between the substrate 406 and the aperture plate 536. The dark-space gap 538 prevents sputter target plasma leaking from the enclosure formed by the chamber shield kit 532, aperture plate 536, and aperture disc 534. In some embodiments of the present invention, the dark-space gap 538 is any value or range of values between about 0 mm and about 3 mm and, in some embodiments, the dark space gap 538 may be between about 1 mm and about 3 mm. It will also be appreciated that the dark-space gap 538 may be greater than 3 mm. In some embodiments, uniformity of the dark space gap 538 thickness is within about 0.5 mm. It will be appreciated that the gap uniformity may be less than or greater than about 0.5 mm.
The lower chamber 500 also includes a deposition ring 540, a weight ring 542, a wing plate 544 and a wing plate holder 546. When a substrate such as a wafer is processed combinatorially with its center aligned with the center of the chamber 500, plasma confinement is satisfied with shield 532, aperture disc 534, aperture plate 536, deposition ring 540 and weight ring 542. However, when the substrate is moved to an off-center location for spot-isolated deposition or etch and a part of the substrate 406 and substrate support 404 is now outside the shield 532 and becomes exposed, wing plate 544 is needed to shield the exposed substrate and prevent stray plasma from being ignited due to the RF power applied to substrate support 404. The wing plate 544 is coupled to the wing plate holder 546, which is coupled to the chamber enclosure 400 via shoulder screws 748, as shown in
The deposition ring 540 is coupled to the weight ring 542, and the weight ring is coupled to the substrate support 404. The aperture plate 536 is positioned over the deposition ring 540. In some embodiments, the weight ring 542 allows for the height of the deposition ring 540 to be adjusted. The deposition ring 540 together with the weight ring 542 and/or wing plate 544, act as a plasma confinement ring to prevent plasma leak by controlling the dark space gap 538 between the aperture plate 536 and the substrate 406.
As shown in
Because the weight ring is a ceramic material and the bottom of the aperture is flush with the bottom of the lower shield, a small, constant, dark-space gap is ensured between the grounded shield and the entire substrate (except a spot exposed by the aperture hole). A chamber with one or multiple sputter guns can be used for both plasma etch and sputter deposition. Plasma etch can be performed by applying RF power from the power source 426 to the substrate support 404 and igniting plasma with gas flow, whereas sputter deposition can be carried out by applying DC power from the power source 424 to the sputter gun(s) 416 and igniting plasma with gas flow to sputter the target. In alternative embodiments, oxygen or nitrogen gases can be flowed into the chamber to perform reactive sputter deposition or the plasma etch.
It will be appreciated that the chamber 400 may have different configurations. For example, in some alternative embodiments, instead of using the deposition ring 540 and weight ring 542 to control the dark-space gap 538, the dark-space gap 538 may be filled with a dielectric material to prevent plasma leak.
Operation 820 places a shield on the substrate, wherein the shield comprises an aperture for exposing a site isolated region of the substrate. The shield covers the substrate surface, exposing only the site isolated region of the substrate to the plasma. Thus the shield can enable site isolated plasma processing, for example, sputter depositing sputter etching the exposed site isolated region. The aperture is operable for enabling sputter deposition or plasma etch of an isolated site on the substrate.
The shield can physically block the ion bombardment, preventing the shielded portion of the substrate surface from being sputter etched. In some embodiments, the shield forms a gap with the substrate, wherein the gap has a width smaller than that of a sheath of the plasma. Thus the plasma generated by the RF power is confined to the region above the substrate and the shield, without any plasma generated in the gap formed between the shield and the substrate. Thus there is no plasma on the covered portion of the substrate, allowing the RF power to be fully applied to the exposed site isolated region, and further allowing the covered surface region from being processed.
In some embodiments, the width of the gap is less than about 3 mm. The width of the plasma sheath depends on the operating conditions, such as the RF power and the ambient species, but in general, for semiconductor process conditions, a gap less than about 3 mm can be used for minimizing stray plasma formation. Thinner gap can also be used, for example, about 2 mm or about 2.5 mm. In some embodiments, zero gaps can be used, for example, by contacting the shield with the substrate surface. In general, the width of the gap is preferably greater than about 1 mm.
In some embodiments, the shield can comprise a conductive material, such as a metal. The shield can also comprise an insulating material, such as a ceramic material. In some embodiments, the shield is electrically connected to the ground. Alternatively, the shield can be electrically connected to the ground through a low pass filter. The low pass filter can prevent high frequency plasma from re-directing to the shield area, thus the plasma can be focused on the site isolated regions to be processed. In some embodiments, one or more sputter guns can be used in the process chamber, for example, to sputter deposit a layer of material on the site isolated regions.
In some embodiments, the present invention discloses a combination of plasma etch and plasma deposition, which are performed in the same process chamber. A RF power can be applied to a substrate support to generate a bias voltage for sputter etching a substrate surface. A sputter gun can be disposed above the substrate for sputter depositing a layer of material on the substrate surface. In addition, a shield can be disposed on the substrate surface to cover the substrate, exposing only one or more site isolated regions for processing.
In some embodiments, the present invention discloses a method for combinatorial processing a substrate. An exemplary method is characterized in that: site-isolated sputter deposition and site-isolated plasma etching are performed in the same process chamber. The method can further comprise positioning a substrate on a substrate support; and shielding the substrate surface while exposing at least a site isolated region of the substrate, wherein the shield forms a gap with the substrate, wherein the gap has a width smaller than 3 mm. The method can further comprise site-isolated cleaning in the same process chamber or full wafer sputter deposition in the same process chamber.
In addition, the site isolated plasma etching can comprise applying a radio frequency (RF) power to the substrate support. The site isolated sputter deposition can comprise using one or more sputter guns. The site-isolated sputter deposition can comprise site-isolated co-sputtering deposition.
Processes for controlling, for example, whether sputter deposition, plasma etch or both is performed in the deposition chamber may be embodied in a computer-readable medium on which is stored one or more sets of instructions (e.g., software). The software may reside, completely or at least partially, within memory and/or within a processor of the controller during execution thereof. The term “computer-readable medium” should be taken to include a single medium or multiple media that store the one or more sets of instructions. The term “computer-readable medium” shall also be taken to include any medium that is capable of storing, encoding or carrying a set of instructions for execution by a machine and that cause a machine to perform any one or more of the methodologies of the present invention. The term “computer-readable medium” shall accordingly be taken to include, but not be limited to, solid-state memories, and optical and magnetic media.
The invention has been described in relation to particular examples, which are intended in all respects to be illustrative rather than restrictive. Various aspects and/or components of the described embodiments may be used singly or in any combination. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the claims.
