METHOD OF FORMING A METAL LAYER OVER A PATTERNED DIELECTRIC BY WET CHEMICAL DEPOSITION INCLUDING AN ELECTROLESS AND A POWERED PHASE

Abstract

By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device scaling, encountered by conventional chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) techniques for the formation of seed layers may be overcome. In some embodiments, a barrier layer is also deposited on the basis of a wet chemical deposition process.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The invention may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:

FIGS. 1 a-1d schematically show cross-sectional views of a semiconductor device during various manufacturing stages in filling an opening formed in a patterned dielectric layer in accordance with illustrative embodiments of the present invention.

Claims

1. A method, comprising: depositing a metal over a patterned layer of a semiconductor device by applying an electrolyte solution and performing an electroless wet chemical deposition process; andestablishing an externally generated electric field in said electrolyte solution while applying said electrolyte solution to further deposit said metal.

2. The method of claim 1, further comprising performing a catalytic activation process on exposed surface areas of said patterned layer prior to performing said electroless wet chemical deposition process.

3. The method of claim 2, wherein performing said catalytic activation process comprises incorporating at least one of platinum, palladium, silver, copper and cobalt into at least some of said exposed surface areas.

4. The method of claim 3, wherein said at least one of platinum, palladium, silver, copper and cobalt is incorporated into said barrier layer while forming said barrier layer.

5. The method of claim 3, wherein said at least one of platinum, palladium, silver, copper and cobalt is incorporated into said barrier layer after forming said barrier layer.

6. The method of claim 1, further comprising forming a barrier layer on a patterned dielectric material prior to depositing said metal, said patterned dielectric material and said barrier layer forming said patterned layer.

7. The method of claim 6, wherein said at least one of platinum, palladium, silver, copper and cobalt is incorporated into said barrier layer while forming said barrier layer.

8. The method of claim 6, wherein said at least one of platinum, palladium, silver, copper and cobalt is incorporated into said barrier layer after forming said barrier layer.

9. The method of claim 6, further comprising forming a catalytic layer over said barrier layer prior to depositing said metal.

10. The method of claim 9, wherein said catalytic layer is formed by at least one of chemical vapor deposition, physical vapor deposition and atomic layer deposition.

11. The method of claim 6, wherein said barrier layer is formed by an electroless deposition process.

12. The method of claim 11, further comprising performing an initial catalytic activation process on exposed surface areas of said patterned dielectric material prior to forming said barrier layer.

13. The method of claim 12, wherein performing said initial catalytic activation process comprises incorporating into said exposed surface portions a catalyst material for initiating deposition of material of said barrier layer.

14. The method of claim 6, wherein said barrier layer comprises at least one of a compound comprising cobalt, tungsten, phosphorous; a compound comprising cobalt, tungsten, boron; a compound comprising cobalt, boron; and a compound comprising molybdenum, nickel, boron.

15. The method of claim 1, wherein said metal is deposited during said electroless wet chemical deposition process with a thickness in the range of approximately 1-10 nm prior to establishing said electric field for the further deposition of said metal.

16. The method of claim 1, wherein said electrolyte solution comprises one or more additives for controlling a deposition behavior during the further deposition based on said electric field.

17. The method of claim 1, further comprising reducing a temperature of said electrolyte solution below a specified process temperature of said electroless deposition process while further depositing said metal on the basis of said electric field.

18. The method of claim 17, wherein said temperature is reduced to approximately 40° C. or less.

19. The method of claim 17, wherein said temperature is reduced prior to establishing said externally generated electric field.

20. The method of claim 1, wherein said metal comprises at least one of copper and silver.

21. A method, comprising: forming a barrier layer over a surface portion of an opening formed in a dielectric layer of a semiconductor device by a wet chemical deposition process;forming a seed layer over said barrier layer by a wet chemical deposition process; andfilling said opening with a metal by an electroplating process using said seed layer.

22. The method of claim 21, further comprising performing a catalytic activation process on said barrier layer for initiating metal deposition during said wet chemical deposition process for forming said seed layer.

23. The method of claim 22, wherein forming said seed layer and filling said opening are performed as an in situ process.

24. The method of claim 23, wherein a process temperature of an electrolyte solution used for forming said seed layer and for filling said opening is reduced during filling said opening.

25. The method of claim 24, wherein an externally generated electric field is established at least temporarily during forming said seed layer.

26. The method of claim 21, wherein said barrier layer comprises at least one of a compound comprising cobalt, tungsten, phosphorous; a compound comprising cobalt, tungsten, boron; a compound comprising cobalt, boron; and a compound comprising molybdenum, nickel, boron.