Claims
- 1. A method for forming an intermetal dielectric layer, comprising:providing a substrate; forming a plurality of metal conductive lines on the substrate, wherein a tied conductive line region and a loose conductive line region consist of the plurality of metal conductive lines; forming a biased-clamped intermetal dielectric layer on the substrate; forming an unbiased-unclamped protection layer on the biased-clamped intermetal dielectric layer wherein the unbiased-unclamped protection layer is thinner than the biased-clamped intermetal dielectric layer; forming a cap layer on the unbiased-unclamped protection layer; and exposing the protection layer. 2.The method for forming the intermetal dielectric layer according to claim 1, wherein the unbiased-unclamped protection layer is a unbiased-unclamped fluorinated silicon glass layer.
- 3. The method for forming the intermetal dielectric layer according to claim 1, wherein the unbiased-unclamped protection layer is formed by using a high density plasma chemical vapor deposition.
- 4. A method for forming an intermetal dielectric layer over a semiconductor substrate, the substrate comprising at least a plurality conductive lines, the method comprising:transferring the substrate into a chamber of a chemical vapor deposition (CVD) system; forming a composite low k dielectric layer over the substrate, comprising: biasing and clamping the CVD system; initiating deposition process to deposit a first low k dielectric layer until said conductive line is covered by the first low k dielectric layer; and unbiasing and unclamping the CVD system during the deposition process to deposit a thin layer of a second low k dielectric layer over the entire said first low k dielectric layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
88118307 A |
Oct 1999 |
TW |
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CROSS REFERENCE TO RELATED APPLICATION
The present application is a continuation of U.S. patent application Ser. No. 09/471,055, filed Dec. 22, 1999 now U.S. Pat. No. 6,200,653.
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5937323 |
Orczyk et al. |
Aug 1999 |
A |
5968610 |
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Continuations (1)
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Number |
Date |
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Parent |
09/471055 |
Dec 1999 |
US |
Child |
09/759570 |
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US |