The subject matter herein generally relates to a circuit board, especially relates to a method of manufacturing a circuit board.
Signals transmitted by the signal wires of the circuit board are susceptible to electromagnetic interference. At present, at least one shielding layer is pressed on the wiring layer and connects the wiring layer to protect signals transmitted from electromagnetic interference. However, the above described method requires processes with high accuracy
Therefore, there is room for improvement within the art.
Implementations of the present disclosure will now be described, by way of embodiments only, with reference to the attached figures.
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein can be practiced without these specific details. In other instances, methods, procedures, and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the embodiments described herein. The drawings are not necessarily to scale, and the proportions of certain parts may be exaggerated to better illustrate details and features of the present disclosure.
The term “comprising,” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series, and the like.
At block 201, referring to
Each of the at least one first conductive structure 15 may protrude from a surface of the first insulating base 11 facing away from the copper layer 13.
At block 202, referring to
At block 203, referring to
In at least one embodiment, the wiring layer 240 comprises a signal wire 241 and two connecting pads 242. The signal wire 241 is between the two connecting pads 242.
At block 204, referring to
In at least one embodiment, the at least one second through hole 201 is defined by laser. In another embodiment, the at least one second through hole 201 may be defined by mechanical cutting or etching.
In another embodiment, each of the at least one second through hole 201 further passes through a portion of the corresponding connecting pad 242, thereby forming a hollow (not shown) in the corresponding connecting pad 242.
At block 205, referring to
In at least one embodiment, an end portion of the second conductive structure 25 connect the corresponding at least one connecting pad 242, and another end portion of the second conductive structure 25 protrudes from a surface of the second insulating base 21 facing away from the metal shielding layer 22.
In at least one embodiment, the second conductive structure 25 is formed by conductive paste filling each of the at least one second through hole 201. In another embodiment, the second conductive structure 25 may be made of other material, such as metal, and may be formed by other method, such as electroplating.
In another embodiment, the end portion of the second conductive structure 25 connecting the corresponding at least one connecting pad 242 can be embedded into the corresponding at least one connecting pad 242.
At block 206, referring to
In at least one embodiment, the wire layer 330 comprises a signal wire 331 and two connecting pads 332. The signal wire 331 is between the two connecting pads 332.
At block 207, referring to
In at least one embodiment, the number of the at least one middle structure 200 is two. In the circuit board 100a, from top to bottom, comprises one single-sided board 10, a first middle structure 200, a second middle structure 200, and the double-sided board 30. An end portion of each at least one first conductive structure 15 facing away from the copper layer 13 connects an end portion of a at least one connecting pad 242 of the first middle structure 200 facing away from the metal shielding layer 22 of the first middle structure 200. An end portion of each second conductive structure 25 of the first middle structure 200 facing away from the connecting pad 242 of the first middle structure 200 connects an end portion of a corresponding at least one connecting pad 242 of the second middle structure 200 facing away from the metal shielding layer 22 of the second middle structure 200. An end portion of each second conductive structure 25 of the second middle structure 200 facing away from the at least one connecting pad 242 of the second middle structure 200 connects an end portion of a corresponding at least one connecting pad 332 facing away from the first copper foil 31. The first insulating base 11 is combined with the third insulating base 23 of the first middle structure 200 to form a dielectric layer to wrap the wiring layer 240 of the first middle structure 200. The second insulating base 21 of the first middle structure 200 is combined with the third insulating base 23 of the second middle structure 200 to form a dielectric layer to wrap the wiring layer 240 of the second middle structure 200. The second insulating base 21 of the second middle structure 200 is combined with the fourth insulating base 32 to form a dielectric layer to wrap the wiring layer 330.
Each of the wiring layer is sandwiched between the copper layer 13 and one shielding layer 22, or between one first copper foil 31 and one shielding layer 22, or between two shielding layers 22. As a result, each of the wiring layer can be protected from electromagnetic interference.
At block 501, referring to
In at least one embodiment, the first insulating base 11 may be a dielectric material having a dielectric constant less than 3.4 and a dielectric dissipation factor less than 0.005, such as liquid crystalline polymer, polyetheretherketone, or modified polyimide. In another embodiment, the first insulating base 11 can be other dielectric material as needed.
At block 502, referring to
At block 503, referring to
In at least one embodiment, the at least one first conductive structure 15 is formed by conductive paste filling each of the at least one hole 103. In another embodiment, the at least one first conductive structure 15 may be formed by electroplating.
At block 601, referring to
In at least one embodiment, the surface of the second insulating base 21 is roughened, a seed layer 221 is formed on the roughened surface, and a metal thickening layer 222 is formed on a surface of the seed layer 221 facing away from the second insulating base 21. The metal shielding layer 22 is formed by the seed layer 221 and the metal thickening layer 222.
The seed layer 221 can be made by coating, electroplating, electroless plating, ion plating, or sputter coating. In at least one embodiment, the seed layer 221 is made by coating a composition on the roughened surface. The composition comprises an initiator, a monomeric compound, CuBr2, sparteine, and silver powders. The initiator has a mass percentage of about 0.036% to about 1.36% of a total mass of the composition. The monomeric compound has a mass percentage of about 10% to about 20% of a total mass of the composition. CuBr2 has a mass percentage of about 0.028% to about 0.28% of a total mass of the composition. Sparteine has a mass percentage of about 0.09% to about 0.9% of a total mass of the composition. Silver powders have a mass percentage of about 80% to about 90% of a total mass of the composition.
In at least one embodiment, the seed layer 221 has a thickness of about 0.1 μm to about 1 μm.
The metal thickening layer 222 may be made by electroplating or electroless plating.
At block 602, referring to
The third insulating base 23 can be made by coating an insulating material on the metal shielding layer 22, and curing the insulating material. In another embodiment, the third insulating base 23 may be pressed on the metal shielding layer 22 directly.
In at least one embodiment, each of the second insulating base 21 and the third insulating base 23 may be a dielectric material having a dielectric constant less than 3.4 and a dielectric dissipation factor less than 0.005, such liquid crystalline polymer, polyetheretherketone, or modified polyimide.
At block 603, referring to
The metal layer 24 may be formed by metallization, or pressing a metal foil on the third insulating base 23.
At block 701, referring to
At block 702, referring to
At block 703, referring to
In at least one embodiment, each of the at least one third through hole 301 passes through the first copper foil 31 and the fourth insulating base 32 to expose one of the at least one connecting pad 332.
In another embodiment, each of the at least one third through hole 301 further passes through a portion of or an entire corresponding connecting pad 332, and the third conductive structure 35 is embedded into the corresponding connecting pad 332.
In another embodiment, referring to
At block 801, two single-sided boards 10 as shown in
At block 802, referring to
In at least one embodiment, compared with the method of manufacturing the laminated board 20, a method of manufacturing the laminated structure 40 further comprises forming another metal layer 45 on a surface of the second insulating layer 41 facing away from the metal shielding layer 42.
The metal layer 45 may be formed by metallization, or pressing a metal foil on the second insulating base 41.
At block 803, referring to
At block 804, referring to
In at least one embodiment, each of the at least one connecting hole 401 just passes through one connecting pad 452, the second insulating base 41, the metal shielding layer 42, and the third insulating base 43.
At block 805, referring to
The electrical connecting structure 46 is formed by conductive paste filling in each of the at least one connecting hole 401. In another embodiment, the electrical connecting structure 46 may be made of other material, such as metal, and may be formed by other method, such as electroplating.
At block 806, referring to
In at least one embodiment, at least one middle structure 200 may be between two single-sided boards 10 when pressing to form the circuit board 100b.
In the illustrated embodiment in
In another embodiment, referring to
In another embodiment, the at least one connecting hole 401 may be passing through a portion of or an entire at least one connecting pad 442. The electrical connecting structure 46 is embedded in the at least one connecting pad 442.
The laminated board 20 comprises the metal layer 24 and the metal shielding layer 22, the laminated structure 40 comprises the metal layer 44, the metal shielding layer 42, and another metal layer 45. Then the wiring layer is formed by the metal layer, and the wiring layer electrically connects the metal shielding layer. That is, in the method for manufacturing the circuit board, the wiring layer is electrically connected to the metal shielding layer before pressing. As a result, the method can reduce an alignment tolerance when pressing.
Depending on the embodiment, certain of the steps of methods described may be removed, others may be added, and the sequence of steps may be altered. It is also to be understood that the description and the claims drawn to a method may include some indication in reference to certain steps. However, the indication used is only to be viewed for identification purposes and not as a suggestion as to an order for the steps.
The seed layer 531 has a thickness of about 0.1 μm to about 1 μm.
It is to be understood, even though information and advantages of the present embodiments have been set forth in the foregoing description, together with details of the structures and functions of the present embodiments, the disclosure is illustrative only; changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the present embodiments to the full extent indicated by the plain meaning of the terms in which the appended claims are expressed.
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