Claims
- 1. A method of depositing a conductive material into a trench defined by a surface of a semiconductor device, said method comprising:
covering said surface of said semiconductor device with a seed layer, wherein a portion of said seed layer lines said trench; depositing a mask over said seed layer in a manner that exposes said portion of said seed layer; and plating said conductive material onto said portion of said seed layer.
- 2. The method in claim 1, wherein said step of plating said conductive material comprises plating a selection of copper, platinum, silver, gold, cobalt, and nickel.
- 3. The method in claim 2, wherein said depositing step comprises providing a plasma.
- 4. The method in claim 3, wherein said step of depositing a mask comprises depositing a dielectric.
- 5. A method of selectively depositing a conductive material over a surface of a semiconductor device, said method comprising:
selectively depositing a mask over said surface of said semiconductor device; and plating a metal over said surface, wherein said plating step is guided by said mask.
- 6. The method in claim 5, wherein said step of plating a metal comprises plating a metal over at least one unmasked portion of said surface.
- 7. The method in claim 6, wherein said depositing step comprises depositing a mask onto a seed layer, wherein said seed layer is configured to encourage deposition of said metal.
- 8. The method in claim 7, wherein said step of depositing a mask onto a seed layer comprises depositing said mask onto a seed layer comprising said metal.
- 9. A method of processing a semiconductor substrate comprising a first portion and a complementary second portion, said comprising:
selectively depositing a first material over said first portion of said semiconductor substrate; and selectively depositing a second material over a second portion of said semiconductor substrate.
- 10. The method in claim 9, wherein:
said step of selectively depositing a first material comprises depositing said first material over said first portion to the exclusion of said second portion; and said step of selectively depositing a second material comprises depositing said second material over said second portion to the exclusion of said first portion.
- 11. The method in claim 10, wherein:
said step of selectively depositing a first material comprises depositing said first material only over said first portion; and said step of selectively depositing a second material comprises depositing said second material only over said second portion.
- 12. The method in claim 10, wherein:
said step of selectively depositing a first material comprises depositing said first material at a first elevation over said semiconductor substrate; and said step of selectively depositing a second material comprises depositing said second material at at least a second elevation under said first elevation.
- 13. A method of processing a circuit device comprising a surface defining a trench, said method comprising:
depositing a non-patterned layer over said surface of said circuit device, wherein said layer exposes said trench; and adding a material within said trench, wherein said material avoids said layer.
- 14. The method in claim 13, wherein said depositing step comprises:
refraining from affirmatively patterning said layer; and allowing at least one factor that inhibits conformal deposition to affect said depositing step.
- 15. The method in claim 14, wherein said allowing step comprises allowing an aspect ratio defined by said trench to inhibit conformal deposition of said layer.
- 16-50. (Cancelled).
- 51. A method of providing copper in a trench defined by an oxide, comprising:
providing a barrier layer over and conformal to said oxide; providing a seed layer over and conformal to said barrier layer; depositing a mask layer over and non-conformal to said seed layer; plating copper into said trench; and removing said mask layer, a portion of said seed layer outside of said trench, and a portion of said barrier layer outside of said trench using chemical mechanical planarization.
- 52. The method in claim 51, wherein said removing step comprises removing a portion of said copper that extends above said trench.
- 53. The method in claim 52, wherein said removing step comprises using a common slurry to remove said portion of said barrier layer and said portion of said seed layer.
- 54. The method in claim 53, wherein said removing step comprises using a common slurry to remove said mask layer, said portion of said barrier layer, and said portion of said seed layer.
- 55. The method in claim 54, wherein said depositing step comprises exposing said trench; and wherein said plating step comprises plating onto any portion of said seed layer that is exposed by said mask layer.
- 56. A method of managing a plurality of slurries comprising a first slurry configured to react with copper at a first rate and not with tantalum, a second slurry configured to react with tantalum and not with copper, and a third slurry configured to react with tantalum and with copper at a second rate slower than said first rate, said method comprising:
providing a semiconductor workpiece comprising:
a material defining a trench, a tantalum layer inside and outside of said trench, a seed layer inside and outside of said trench, wherein said seed layer comprises copper, a mask layer outside of said trench and avoiding said inside of said trench, and copper inside of said trench and avoiding an area immediately outside of said trench; refraining from exposing said workpiece to said first slurry and said second slurry; and chemically-mechanically planarizing said workpiece using said third slurry.
- 57. A method of providing tantalum and copper in a trench defined by a support surface, said method comprising:
depositing tantalum inside said trench and immediately outside said trench depositing a first amount of copper inside said trench and immediately outside said trench; depositing a second amount of copper inside said trench to the exclusion of depositing immediately outside of said trench; and removing copper and tantalum immediately outside of said trench in a single CMP step.
- 58. The method in claim 57, further comprising:
depositing a mask immediately outside of said trench to the exclusion of
depositing inside said trench, wherein said step of depositing a mask comprises depositing said mask after said step of depositing a first amount of copper and before said step of depositing a second amount of copper; and removing said mask after said step of depositing a second amount of copper.
- 59. The method of claim 58, wherein said step of depositing a first amount of copper comprises depositing a copper layer about 1000 angstroms thick.
- 60. The method in claim 58, wherein said removing step comprises removing copper outside of said trench at a rate of about 1000 angstroms per minute.
- 61. The method in claim 58, wherein said removing step comprises removing copper outside of said trench at a rate of at most 1000 angstroms per minute.
- 62. The method in claim 61, wherein said removing step comprises removing copper outside of said trench at a rate of about 650 angstroms per minute.
RELATED APPLICATION
[0001] This application is a continuation of U.S. application Ser. No. 10/295,536, filed Nov. 15, 2002; which is a divisional of U.S. application Ser. No. 09/644,254, filed Aug. 22, 2000 and issued as U.S. Pat. No. 6,511,912.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09644254 |
Aug 2000 |
US |
Child |
10295536 |
Nov 2002 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
10295536 |
Nov 2002 |
US |
Child |
10860939 |
Jun 2004 |
US |