Claims
- 1. A method of polishing a surface of a semiconductor wafer comprising the steps of:(a) providing a polishing pad having a polishing surface comprising a multiplicity of one type of abrasive particle in said polishing surface; (b) holding said wafer in a carrier such that said wafer surface is in contact with said polishing surface; (c) moving said carrier and/or said polishing surface to provide both pressure on said wafer surface and relative lateral motion between said wafer surface and said polishing surface; and (d) providing a reactive liquid solution essentially free from particulate matter at an interface between said wafer surface and said polishing surface, wherein a change in polishing conditions is effected by changing the ionic strength of said reactive liquid solution.
- 2. The method according to claim 1 wherein said abrasive particles are metal oxide.
- 3. The method according to claim 1 further comprising the step of recirculating said reactive liquid solution through said interface.
- 4. The method according to claim 1 wherein said polishing pad is a solid polymer sheet containing abrasive particles.
- 5. The method according to claim 1 wherein said polishing surface comprises a multiplicity of two or more types of abrasive particles.
- 6. The method according to claim 5 wherein said types of abrasive particles are from the group consisting of metal oxides such as alumina, chromia, zirconia, silica, iron oxide, ceria, magnesium oxide, and titania.
Parent Case Info
This Application, which claims the benefit of Provisional Application Serial No. 60,196,672 filed Apr. 12, 2000, is a Continuation-in-Part of application Ser. No. 09/498,267 filed Feb. 3, 2000, U.S. Pat. No. 6,245,679, which is a Continuation-in-Part of application Ser. No. 09/363,540 filed Jul. 29, 1999, U.S. Pat. No. 6,030,899, which is a Continuation of application Ser. No. 08/912,144 filed Aug. 15, 1997, U.S. Pat. No. 5,932,486, which claims priority from U.S. Provisional Application No. 60/024,114 filed Aug. 16, 1996, said application Ser. No. 09/498,267 filed Feb. 3, 2000 is also a Continuation-in-Part of application Ser. No. 09/384,607, filed August 27 U.S. Pat. No. 6,375,559, which is a Continuation of U.S. application Ser. No. 09/049,864 filed Mar. 27, 1998, U.S. Pat. No. 6,099,394, which claims priority from U.S. Provisional Applications Serial No. 60/042,115 filed Mar. 28, 1997, Serial No. 60/041,844 filed Apr. 9, 1997, and Serial No. 60/064,875 filed Nov. 6, 1997 and which is a Continuation-in-Part of U.S. application Ser. No. 09/021,437 filed Feb. 10, 1998, U.S. Pat. No.6,022,264, which claims priority from U.S. Provisional Application Serial No. 60/037,582 filed Feb. 10, 1997.
US Referenced Citations (14)
Non-Patent Literature Citations (3)
Entry |
Brown, Norman J., “Lapping—Polishing and Shear Mode Grinding”, Livermore National Laboratory. |
Primak, William, The Vitreous Silica Surface;C consequences of Grinding and Polishing, Physics of Chemistry and Glass, vol. 22, No. 2, Apr. 1981. |
Cook, Lee M., “Chemical Processes in Glass Polishing,” Journal of Non-Crystalline Solids 120, pp. 152-171, 1990. |
Provisional Applications (6)
|
Number |
Date |
Country |
|
60/196672 |
Apr 2000 |
US |
|
60/024114 |
Aug 1996 |
US |
|
60/042115 |
Mar 1997 |
US |
|
60/041844 |
Apr 1997 |
US |
|
60/064875 |
Nov 1997 |
US |
|
60/037582 |
Feb 1997 |
US |
Continuation in Parts (6)
|
Number |
Date |
Country |
Parent |
09/498267 |
Feb 2000 |
US |
Child |
09/833309 |
|
US |
Parent |
09/363540 |
Jul 1999 |
US |
Child |
09/498267 |
|
US |
Parent |
08/912144 |
Aug 1997 |
US |
Child |
09/363540 |
|
US |
Parent |
09/384607 |
Aug 1999 |
US |
Child |
09/498267 |
|
US |
Parent |
09/049864 |
Mar 1998 |
US |
Child |
09/384607 |
|
US |
Parent |
09/021437 |
Feb 1998 |
US |
Child |
09/049864 |
|
US |