The present invention relates to an electronic component embedded module that embeds an electronic component, and a method for manufacturing the same.
With the recent trend for smaller and lightweight electronic equipment, demands for high-density printed circuit boards and small surface-mounted components have become stricter. For the printed circuit boards, efforts have been made to increase the density in a direction parallel to the circuit board surface by narrowing the wiring rule. Further, a buildup method is employed to laminate circuit boards, and inner vias are formed perpendicular to the circuit board surfaces.
For the purpose of providing smaller surface-mounted components, a CSP (Chip Size Package) has been used widely. This is prepared by flip-chip mounting an active element side of a semiconductor chip to face a circuit board. In the flip chip mounting, a semiconductor bare chip is mounted directly on a circuit board through a solder bump or an Au stud bump, without using a lead.
For the purpose of realizing a package with higher density, technology of three-dimensional mounting has been developed, by embedding thin film such as a semiconductor device and a passive component (see for example, Patent document 1 and Patent document 2).
Hereinafter, a method for manufacturing a conventional electronic component embedded module will be described with reference to the attached figures.
Next, as shown in
Next, as shown in
Next, the peelable carrier 501 and the peelable carrier 509 are peeled off to obtain an electronic component embedded module as shown in
However, in an electronic component embedded module obtained by the above-described manufacturing method, the sealing agent injected into the space between the semiconductor chip and the wiring pattern will spew out from the edge face of the semiconductor ship, resulting in difficulty in arranging inner vias in the vicinity of the semiconductor chip.
Patent document 3 discloses a resolution of this problem as shown in
Patent document 1: JP H11-220262 A
Patent document 2: JP2002-57276 A
Patent document 3: JP2001-244638A
However, in the electronic component embedded module disclosed by Patent document 3, the space for forming an inner a becomes a blind via. As a result, in the step of filling the space with a conductive resin composition, it is difficult to fill the space fully to the bottom with the conductive resin composition. Moreover, the chips formed during the blind via processing make a residue, and the residue may adhere onto the wiring pattern for inner via connection, which may degrade the reliability of the electric connection of the inner vias.
Furthermore, since the sealing resin should be provided to cover the semiconductor chip, the thickness of the sealing resin layer will be 400 μm or more when considering the semiconductor chip thickness and the bump height for the semiconductor chip mounting. Therefore, the aspect ratio of the inner via to be formed will be at least 1. As a result, filling with the conductive resin composition may be difficult, and there may be a risk that a clearance is formed between the conductive resin composition and a land for connecting inner vias. This may degrade further the reliability of the electric connection of the inner vias. On the other hand, when the inner via diameter is increased to 400 μm or more for the purpose of lowering the aspect ratio, the wiring pattern density is lowered and thus the high-density mounting will be difficult.
In addition to that, the face of the semiconductor chip opposite to the active element face (hereinafter, it may be referred to “back face” simply) has a low adhesion to the sealing resin. And thus, when a crack occurs between the back face and the sealing resin, the crack may spread up to the interface between the sealing resin and the inner vias. Similarly in this case, the reliability of the electric connection of the inner vias may deteriorate.
For solving the above-mentioned problems, an object of the present invention is to provide an electronic component embedded module that enables arrangement of inner vias in the vicinity of an electronic component and that can improve the reliability of electric connection of the inner vias, and a method for manufacturing the same.
A first electronic component embedded module of the present invention is an electronic component embedded module including: an electrical insulating substrate and a first electronic component embedded in the electrical insulating substrate, the electrical insulating substrate comprises a first electrical insulating layer and a second electrical insulating layer laminated on the first electrical insulating layer, a first wiring pattern is disposed on a main face of the first electrical insulating layer opposite to the second electrical insulating layer, a second wiring pattern is disposed on a main face of the second electrical insulating layer opposite to the first electrical insulating layer, the first electronic component is embedded in the second electrical insulating layer and connected electrical to the first wiring pattern through first inner vias that penetrate the first electrical insulating layer, the first wiring pattern and the second wiring pattern are connected electrically to each other through second inner vias that penetrate the first electrical insulating layer and third inner vias that penetrate the second electrical insulating layer, and the second inner vias and the third inner vias are arranged continuously.
A second electronic component embedded module of the present invention is an electronic component embedded module including: an electrical insulating substrate, and a first electronic component and a second the electrical insulating substrate comprises a first electrical insulating layer, a second electrical insulating layer, and a third electrical insulating layer that is sandwiched by the first and second electrical insulating layers, a first wiring pattern is disposed on a main face of the first electrical insulating layer opposite to the third electrical insulating layer, a second wiring pattern is disposed on a main face of the second electrical insulating layer opposite to the third electrical insulating layer, the first electronic component is embedded in the third electrical insulating layer and connected electrically to the first wiring pattern through first inner vias that penetrate the first electrical insulating layer, the second electronic component is embedded in the third electrical insulating layer and connected electrically to the second wiring pattern through second inner vias that penetrate the second electrical insulating layer, the first wiring pattern and the second wiring pattern are connected electrically to each other through third inner vias that penetrate the first electrical insulating layer, fourth inner vias that penetrate the third electrical insulating layer, and fifth inner vias that penetrate the second electrical insulating layer, and the third inner vias, the fourth inner vias and the fifth inner vias are arranged continuously.
A first method for manufacturing an electronic component embedded module of the present invention includes steps of: (a) forming first through holes and second through holes in a first electrical insulating layer, and filling the first and second through holes respectively with a first conductive resin composition, (b) laminating the first electrical insulating layer on a first base with a first wiring pattern formed thereon so that the first wiring pattern and the first conductive resin composition are in contact with each other, and disposing an electronic component on the first through holes filled with the first conductive resin composition, thereby forming a first laminate, (c) forming third through holes in a second electrical insulating layer and filling the third through holes with a second conductive resin composition, (d) laminating the second electrical insulating layer on the first laminate so as to position the third through holes filled with the second conductive resin composition on the second through holes filled with the first conductive resin composition, and laminating a second base with a second wiring pattern formed thereon on the second electrical insulating layer so that the second wiring pattern and the second conductive resin composition are in contact with each other, thereby forming a second laminate, and (e) subjecting the second laminate to heat and pressure so that the electronic component is embedded in the second electrical insulating layer, the electronic component and the first wiring pattern are connected electrically to each other through first inner vias made of the first conductive resin composition, and the first wiring pattern and the second wiring pattern are connected electrically to each other through second inner vias made of the first conductive resin composition and third inner vias made of the second conductive resin composition.
A second method for manufacturing an electronic component embedded module of the present invention includes steps of: (I) forming first through holes and second through holes in a first electrical insulating layer, and filling the first and second through holes respectively with a first conductive resin composition, (II) laminating the first electrical insulating layer on a first base with a first wiring pattern formed thereon so that the first wiring pattern and the first conductive resin composition are in contact with each other, and disposing a first electronic component on the first through holes filled with the first conductive resin composition, thereby forming a first laminate, (III) forming third through holes and fourth through holes in a second electrical insulating layer, and filling the third and fourth through holes respectively with a second conductive resin composition, (IV) laminating the second electrical insulating layer on a second base with a second wiring pattern formed thereon so that the second wiring pattern and the second conductive resin composition are in contact with each other, and disposing a second electronic component on the third through holes filled with the second conductive resin composition, thereby forming a second laminate, (V) forming fifth through holes in a third electrical insulating layer and filling the fifth through holes with a third conductive resin composition, (VI) sandwiching the third electrical insulating layer with the first and second laminates so that the fifth through holes filled with the third conductive resin composition are positioned between the second through holes filled with the first conductive resin composition and the fourth through holes filled with the second conductive resin composition, thereby forming a third laminate, and (VII) subjecting the third laminate to heat and pressure so that the first an second electronic components are embedded in the third electrical insulating layer; the first electronic component and the first wiring pattern are connected electrically to each other through first inner vias made of the first conductive resin composition; the second electronic component and the second wiring pattern are connected electrically to each other through second inner vias made of the second conductive resin composition; and the first wiring pattern and the second wiring pattern are connected electrically to each other through third inner vias made of the first conductive resin composition, fourth inner vias made of the third conductive resin composition, and fifth inner vias made of the second conductive resin composition.
A first electronic component embedded module of the present invention includes an electrical insulating substrate and a first electronic component embedded in this electrical insulating substrate. The electrical insulating substrate includes a first electrical insulating layer and a second electrical insulating layer laminated on this first electrical insulating layer. A first wiring pattern is disposed on a main face of the first electrical insulating layer opposite to the second electrical insulating layer. A second wiring pattern is disposed on a main face of the second electrical insulating layer opposite to the first electrical insulating layer. Here, the “main face of the first electrical insulating layer opposite to the second electrical insulating layer” denotes a front face of the first electrical insulating layer opposite to the second electrical insulating layer side in a plan view. This principle is applied similarly to the expression “main face of the second electrical insulating layer opposite to the first electrical insulating layer”.
For the first electronic component, for example, an active element and a passive element can be used. For the active element, for example, semiconductor elements such as a transistor, IC (Integrated Circuit) and LSI (Large Scale Circuit) can be used. For the passive element, for example, an inductor, a capacitor, a resistor and the like can be used.
For the first and second electrical insulating layers, for example, an electric insulating material based on a thermosetting resin such as an epoxy resin, a phenol resin and polyimide can be used. Among them, an electric insulating material including a thermosetting resin and an inorganic filler such as SiO2 is used preferably since the mechanical strength of the first electrical insulating layer can be improved. Particularly, a material that does not deteriorate during a hot process such as a reflow step (for example, a heat-resistant material that can resist heat of 240° C. for at least 10 seconds) is preferred. An example of such materials is a composite material including 10-40 wt % of epoxy resin and 60-90 wt % of SiO2 filler. Preferably, the material of the first electrical insulating layer and the material of the second electrical insulating layer are identical, since it is effective in preventing warping and cracks caused by the difference in the linear expansion coefficients of the respective layers, thereby providing an electronic component embedded module with a highly reliable electric connection.
The first and second wiring patterns are formed of electrically conductive materials such as a copper foil or a conductive resin composition. When a copper foil is used for the first and second wiring patterns, for example, a copper foil having a thickness of about 12 μm to about 35 μm made by electroplating can be used. It is desirable that a surface of the copper foil in use, which will be in contact with the electrical insulating layer, is roughened to improve the adhesion with the electrical insulating layer. Alternatively, a copper foil whose surface is subjected to a coupling treatment or a copper foil plated with tin, zinc, nickel or the like, can be used. Thereby, the adhesion with the electrical insulating layer and the oxidation resistance can be improved.
In the first electronic component embedded module of the present invention, the first electronic component is embedded in the second electrical insulating layer and connected electrically to the first wiring pattern through the first inner vias that penetrate the first electrical insulating layer. Thereby, there is no necessity of forming a gold bump, a solder bump or the like as a conventional electric connection component, and the process of manufacturing the electronic component embedded module can be simplified.
The first wiring pattern and the second wiring pattern are connected electrically to each other through second inner vias that penetrate the first electrical insulating layer and third inner vias that penetrate the second electrical insulating layer, and the second inner vias and the third inner vias are arranged continuously. Due to this configuration, as described below, it is possible to form through holes in the first and second electrical insulating layers and to fill these through holes with a conductive resin composition before laminating the first electrical insulating layer and the second electrical insulating layer. Namely, since such through holes can be employed as space for providing inner vias, filling of the conductive resin composition can be carried out in a reliable manner, thereby improving the reliability of the electric connection of the inner vias. Moreover, since the first and second electrical insulating layers serve to seal the first electronic component and the first inner vias as an electric connection component to be connected to this first electronic component, the second and third inner vias can be formed in the vicinity of the first electronic component.
The first to the third inner vias can be made of a conductive resin composition as a mixture of metallic particles and a thermosetting resin, for example. For the metal of the metallic particles, gold, silver, copper, nickel or the like can be used. These metals are preferred due to the high electric conductivity. Among them, copper is preferred particularly since copper has high electric conductivity and it resists migration. For the thermosetting resin, for example, an epoxy resin, a phenol resin, a cyanate resin and the like can be used. Among them, the epoxy resin is preferred due to the excellent heat resistance. The diameters of the first to the third inner vias are about 20 μm to about 300 μm, for example.
Next, a second electronic component embedded module of the present invention will be described. Further explanation is omitted for the contents overlapping with those of the first electronic component embedded module in the present invention.
The second electronic component embedded module of the present invention includes an electrical insulating substrate, and a first electronic component and a second electronic component embedded in this electrical insulating substrate. The electrical insulating substrate includes a first electrical insulating layer, a second electrical insulating layer, and a third electrical insulating layer sandwiched by the first and second electrical insulating layers. A first wiring pattern is disposed on a main face of the first electrical insulating layer opposite to the third electrical insulating layer. A second wiring pattern is disposed on a main face of the second electrical insulating layer opposite to the third electrical insulating layer.
For the first and second electronic components, any electronic components similar to the first electronic component used for the above-mentioned first electronic component embedded module of the present invention can be used. Similarly, for the first to third electrical insulating layers, any electrical insulating layers similar to the first and second electrical insulating layers used for the above-mentioned first electronic component embedded module can be used. Further, for the first and second wiring patterns, any wiring patterns similar to the first and second wiring patterns used for the above-mentioned electronic component embedded module of the present invention can be used. It is preferable that the first electrical insulating layer, the second electrical insulating layer and the third electrical insulating layer are formed of the same material, so that warping and cracks caused by the difference in the linear expansion coefficients of the respective layers can be prevented, thereby providing an electronic component embedded module with excellent reliability of electric connection.
And in the second electronic component embedded module of the present invention, the first electronic component is embedded in the third electrical insulating layer and also connected electrically to the first wiring pattern through first inner vias that penetrate the first electrical insulating layer, and the second electronic component is embedded in the third electrical insulating layer and also connected electrically to the second wiring pattern through second inner vias that penetrate the second electrical insulating layer. Thereby, there is no necessity of forming a gold bump, a solder bump or the like as a conventional electric connection component, and thus the process of manufacturing the electronic component embedded module can be simplified.
Furthermore, the first wiring pattern and the second wiring pattern are connected electrically to each other through third inner vias that penetrate the first electrical insulating layer, fourth inner vias that penetrate the third electrical insulating layer, and fifth inner vias that penetrate the second electrical insulating layer. The third inner vias, the fourth inner vias and the fifth inner vias are arranged continuously. Due to this configuration, as mentioned below, it is possible to form through holes in the first to third electrical insulating layers and fill these through holes with a conductive resin composition, before laminating the first electrical insulating layer, the second electrical insulating layer and the third electrical insulating layer Namely, since the through holes can be employed for space to provide inner vias, filling of the conductive resin composition can be carried out in a reliable manner. Therefore, the reliability of the electric connection of the inner vias can be improved. Moreover, since the first to third electrical insulating layers serve to seal the first and second electronic components and the first and second inner vias, the third to fifth inner vias can be formed in the vicinity of the first and second electronic components. The first to fifth inner vias used here can be the same as the first to third inner vias used for the above-mentioned first electronic component embedded module of the present invention.
Next, a method for manufacturing an electronic component embedded module of the present invention will be described. A first method for manufacturing an electronic component embedded module of the present invention denotes a method suitable for manufacturing the above-mentioned first electronic component embedded module of the present invention. Further explanation is omitted for the contents overlapping with those of the first electronic component embedded module in the present invention.
The first method for manufacturing an electronic component embedded module of the present invention includes the steps below. In the first step (a), first through holes and second through holes are formed in a first electrical insulating layer, and the first and second through holes are filled respectively with a first conductive resin composition. For forming the first and second through holes, processes such as punching and laser processing can be employed. For filling the through holes with the first conductive resin composition, for example, mask printing or the like can be employed. The first conductive resin composition used here can be a conductive resin composition prepared by mixing metallic particles and a thermosetting resin, for example. For the metals of the metallic particles, for example, gold, silver, copper, nickel and the like can be used. These metals are preferred due to the high electric conductivity. Among them, copper is preferred particularly since copper has high electric conductivity and it resists migration. For the thermosetting resin, for example, an epoxy resin, a phenol resin, a cyanate resin and the like can be used. Among them, the epoxy resin is preferred particularly due to the excellent heat resistance. In the next step (b), a first electrical insulating layer is laminated on a first base with a first wiring pattern formed thereon, so that the first wiring pattern and the first conductive resin composition are in contact with each other. And an electronic component is disposed on the first through holes filled with the first conductive resin composition, thereby forming a first laminate. Specific examples of the first base will be described later.
And in the step (c), third through holes are formed in the second electrical insulating layer and filled with a second conductive resin composition. For forming the third through holes, processes such as punching and laser processing can be employed. For filling the through holes with the second conductive resin composition, or example, mask printing can be employed. For the second conductive resin composition, any conductive resin composition substantially the same as the above-mentioned first conductive resin composition can be used. The step (c) can be carried out after/before the step (a). Alternatively, the step (a) can be carried out concurrently with the step (c).
In the next step (d), a second electrical insulating layer is laminated on the first laminate so that the third through holes filled with the second conductive resin composition are positioned on the second through holes filled with the first conductive resin composition, and a second base with a second wiring pattern formed thereon is laminated on the second electrical insulating layer so that the second wiring pattern and the second conductive resin composition are in contact with each other, thereby forming a second laminate. Specific examples of the second base will be described later.
In the next step (e), the second laminate is subjected to heat and pressure so that the electronic component is embedded in the second electrical insulating layer, the electronic component and the first wiring pattern are connected electrically to each other through first inner vias made of the first conductive resin composition, and the first wiring pattern and the second wiring pattern are connected electrically to each other through second inner vias made of the first conductive resin composition and third inner vias made of the second conductive resin composition. The condition for applying heat and pressure is that, for example, a pressure of 1 MPa to 20 MPa is applied while heating at a temperature of 150° C. to 260° C. In the above-mentioned process, since the through holes can be used as space for providing inner vias, filling of the conductive resin composition can be carried out in a reliable manner. Thereby, the reliability of the electric connection of the inner vias can be improved.
Next, a second method for manufacturing an electronic component embedded module of the present invention will be described. The second method for manufacturing an electronic component embedded module of the present invention denotes a method suitable for manufacturing the second electronic component embedded module of the present invention. Further explanation is omitted for the contents overlapping with the above explanations about the first and second electronic component embedded modules of the present invention.
In the second method for manufacturing an electronic component embedded module of the present invention includes, first, (I) first through holes and second through holes are formed in a first electrical insulating layer, and the first and second through holes are filled respectively with a first conductive resin composition. For forming the first and second through holes, processes such as punching and laser processing can be employed. For filling the through holes with the first conductive resin composition, for example, mask printing can be employed. The first conductive resin composition used here can be a conductive resin composition prepared by mixing metallic particles and a thermosetting resin, for example. For the metals of the metallic particles, for example, gold, silver, copper, nickel and the like can be used. These metals are preferred due to the high electric conductivity. Among them, copper is preferred particularly since copper has high electric conductivity and it resists migration. For the thermosetting resin, for example, an epoxy resin, a phenol resin, a cyanate resin and the like can be used. Among them, the epoxy resin is preferred particularly due to the excellent heat resistance.
In the next step (II), a first electrical insulating layer is laminated on a first base with a first wiring pattern formed thereon, so that the first wiring pattern and the first conductive resin composition are in contact with each other, and a first electronic component is disposed on the first through holes filled with the first conductive resin composition, thereby forming a first laminate. Specific examples of the first base will be described later.
In the next step (III), third through holes and fourth through holes are formed in the second electrical insulating layer, and the third and fourth through holes are filled respectively with a second conductive resin composition. For forming the third and fourth through holes, processes such as punching and laser processing can be employed. For filing the through holes with the second conductive resin composition, for example, mask printing can be employed. For the second conductive resin composition, any conductive resin composition substantially the same as the above-mentioned first conductive resin composition can be employed.
And in the step (IV), a second electrical insulating layer is laminated on the second base with a second wiring pattern formed thereon, so that the second wiring pattern and the second conductive resin composition are in contact with each other, and a second electronic component is disposed on third through holes filled with the second conductive resin composition, thereby forming a second laminate. Specific examples of the second base will be described later.
In the next step (V), fifth through holes are formed in a third electrical insulating layer, and the fifth through holes are filled with a third conductive resin composition. For forming the fifth through holes, processes such as punching and laser processing can be employed. For filling the through holes with the third conductive resin composition, for example, mask printing can be employed. For the third conductive resin composition, any conducive resin composition substantially same as the above-mentioned first conductive resin composition can be employed. The order of the above steps (I), (III) and (V) is not limited particularly. Alternatively, the steps (I), (III) and (V) can be carried out concurrently.
In the next step (VI), the third electrical insulating layer is sandwiched by the first and second laminates so that the fifth through holes filled with the third conductive resin composition are positioned between the second through holes filled with the first conductive resin composition and the fourth through holes filled with the second conductive resin composition, thereby forming a third laminate.
In the next step (VII), the third laminate is subjected to heat and pressure so that the first and second electronic components are embedded in the third electrical insulating layer; the first electronic component and the first wiring pattern are connected electrically to each other through first inner vias made of the first conductive resin composition; and, the second electronic component and the second wiring pattern are connected electrically to each other through the second inner vias made of the second conductive resin composition; and the first wiring pattern and the second wiring pattern are connected electrically to each other through third inner vias made of the first conductive resin composition, fourth inner vias made of the third conductive resin composition, and fifth inner vias made of the second conductive resin composition. The condition for applying heat and pressure is that, for example, a pressure of 1 MPa to 20 MPa is applied while heating at a temperature of 150° C. to 260° C. In the above-mentioned process, since the through holes can be used as space for providing inner vias, filling of the conductive resin composition can be carried out in a reliable manner. Thereby, the reliability of the electric connection of the inner vias can be improved.
Hereinafter, embodiments of the present invention will be described with reference to the attached figures. Regarding the figures for reference, for the purpose of providing brief and concise explanation, components having the substantially same functions may be indicated with the identical reference numbers to avoid the duplicated explanation.
First, an electronic component embedded module according to a First Embodiment of the present invention will be described.
As shown in
The first electronic component 11 is embedded in the second electrical insulating layer 13 and connected electrically to the first wiring pattern 14 through first inner vias 16 that penetrate the first electrical insulating layer 12. As a result, there is no necessity of forming a gold bump, a solder bump or the like as a conventional electric connection component, and thus the process of manufacturing the electronic component embedded module 1 can be simplified.
The first wiring pattern 14 and the second wiring pattern 15 are connected electrically to each other through second inner vias 17 that penetrate the first electrical insulating layer 12 and third inner vias 18 that penetrate the second electrical insulating layer 13. The second inner vias 17 and the third inner vias 18 are arranged continuously. Due to this configuration, as mentioned later, it is possible to form through holes in the first and second electrical insulating layers 12, 13 and to fill these through holes with conductive resin compositions, before laminating the first electrical insulating layer 12 and the second electrical insulating layer 13. Namely, since through holes can be employed as space for providing inner vias, filling of the conductive resin composition can be carried out in a reliable manner. And thus, the reliability of the electric connection of the inner vias can be improved.
In the electronic component embedded module 1, the first and second electrical insulating layers 12, 13 serve to seal the first electronic component 11 and the first inner vias 16, and thus the second and third inner vias 17, 18 can be formed in the vicinity of the first electronic component 11. Further, since a gold bump or a solder bump as a conventional electric connection component is not used, the thickness of the first electrical insulating layer 12 can be set arbitrarily. Therefore, for example, it is possible to form second inner vias 17 with a low aspect ratio.
In a case where an electrical insulating layer including an inorganic filler is used for the second electrical insulating layer 13, even when a crack develops between the back face of the first electronic component 11 and the second electrical insulating layer 13, the crack can be prevented from spreading to the third inner vias 18. Thereby, the reliability of the electric connection of the third inner vias 18 can be ensured.
Furthermore in the electronic component embedded module 1, the exposed face of the first electrical insulating layer 12 and the outermost surface of the first wiring pattern 14 are formed substantially flush with each other, and the exposed face of the second electrical insulating layer 13 and the outermost surface of the second wiring pattern 15 are formed substantially flush with each other. Thereby, the thickness of the electronic component embedded module 1 can be reduced easily. The method for manufacturing the electronic component embedded module I will be described later.
Next, a variation of the electronic component embedded module 1 according to First Embodiment of the present invention will be described with reference to
The electronic component embedded module of the present invention can be an electronic component embedded module as shown in
The electronic component embedded module of the present invention can be an electronic component embedded module as shown in
The electronic component embedded module of the present invention can have a configuration as shown in
As shown in
Next, a preferred method for manufacturing the electronic component embedded module 1 according to First Embodiment will be described.
First, as shown in
Next, as shown in
Next, as shown in
Subsequently, third through holes 25 are formed in the second electrical insulating layer 13 by the same method as in
Subsequently, the first base 23 and the second base 27 are peeled to provide the electronic component embedded module 1 in the finished form as shown in
In the above-mentioned manufacturing method, the second and third through holes 21, 25 are formed so that the diameter of the third through holes 25 will be larger than the diameter of the second through holes 21, thereby the electronic component embedded module as shown in
Alternatively in the above-mentioned manufacturing method, the electronic component embedded module as shown in
The following description is about an electronic component embedded module according to Second Embodiment of the present invention.
As shown in
The first electronic component 101a is embedded in the third electrical insulating layer 150 and connected electrically to the first wiring pattern 104 through first inner vias 106 that penetrate the first electrical insulating layer 102. The second electronic component 101b is embedded in the third electrical insulating layer 150 and connected electrically to the second wiring pattern 105 through second inner vias 107 that penetrate the second electrical insulating layer 103. The first wiring pattern 104 and the second wiring pattern 105 are connected electrically to each other through third inner vias 108 that penetrate the first electrical insulating layer 102, fourth inner vias 151 that penetrate the third electrical insulating layer 150, and fifth inner vias 152 that penetrate the second electrical insulating layer. The third inner vias 108, the fourth inner vias 151 and the fifth inner vias 152 are arranged continuously. Due to the above-described configuration, it is possible to provide an electronic component embedded module that can provides effects similar to those of the electronic component embedded module 1 (see
Subsequently, a variation of the electronic component embedded module according to Second Embodiment of the present invention will be described below with reference to
The electronic component embedded module of the present invention can be an electronic component embedded module as shown in
The electronic component embedded module of the present invention can be an electronic component embedded module as shown in
As shown in
The electronic component embedded module of the present invention can be an electronic component embedded module as shown in
The following description is about a preferred method for manufacturing the electronic component embedded module 2 according to Second Embodiment of the present invention.
First, as shown in
Next, as shown in
Next, as shown in
Subsequently, third through holes 271 and fourth through holes 273 are formed in the second electrical insulating layer 103 by the same method as in
Next, as shown in
Subsequently, the first base 230 and the second base 270 are peeled off to provide the electronic component embedded module 2 in a finished form shown in
In the above-mentioned manufacturing method, the second, fourth and fifth through holes 210, 273, 250 are formed so that the diameter of the fifth through holes 250 is larger than the diameter of the second through holes 210 and the diameter of the fourth through holes 273, and thereby the electronic component embedded module shown in
In the above-mentioned manufacturing method, the electronic component embedded module shown in
It should be noted that the present invention will not be limited to the above-mentioned embodiments of the present invention. For example, as shown in
Furthermore, as shown in
As shown in
Alternatively, as shown in
The following description is about a preferred method for manufacturing the above-mentioned electronic component embedded module shown in
First, as shown in
Next, as shown in
Next, as shown in
Subsequently, by the same method as shown in
Subsequently, the first base 23 and the second base 27 are peeled off to provide the electronic component embedded module 1 in a finished form as shown in
According to the present invention, an electronic component embedded module with excellent reliability of electric connection of its inner vias can be provided.
Number | Date | Country | Kind |
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2005-362093 | Dec 2005 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2006/322869 | 11/16/2006 | WO | 00 | 5/9/2008 |