Claims
- 1. An electrochemical processing system, comprising:
a system platform having a plurality of processing cells positioned thereon; at least one robot positioned to transfer substrates between the plurality of processing cells; and a fluid delivery system in fluid communication with each of the plurality of processing cells, the fluid delivery system being configured to provide multiple chemistries to each of the plurality of processing cells.
- 2. The electrochemical processing cell of claim 1, wherein the fluid delivery system comprises:
a first plurality of additive sources; a metered pump in fluid communication with each of the additive sources; a first virgin electrolyte source in fluid communication with the metered pump; and a manifold in fluid communication with the metered pump at an input and with the plurality of processing cells at an output, the manifold being configured to direct a specific chemistry to a selected one of the plurality of processing cells.
- 3. The electrochemical processing cell of claim 1, further comprising a second plurality of additive sources and a second virgin electrolyte source, both the second plurality of additive sources and the second virgin electrolyte source being in fluid communication with a manifold that is selectively in fluid communication with the plurality of processing cells.
- 4. The apparatus of claim 2, wherein the first plurality of additive sources further comprise:
a first source for providing an electrochemical plating accelerator; a second source for providing an electrochemical plating leveler; and a third source for providing an electrochemical plating suppressor.
- 5. The apparatus of claim 2, wherein the first plurality of additive sources further comprises:
at least one bulk additive container; and at least one buffer container having a volume less than the bulk additive container and being in fluid communication with an associated bulk additive container and the metered pump.
- 6. The electrochemical processing cell of claim 1, wherein at least two of the plurality of processing cells comprise electrochemical plating cells.
- 7. The electrochemical processing cell of claim 1, wherein at least one of the plurality of processing cells comprise a spin rinse dry processing cell.
- 8. The electrochemical processing cell of claim 1, wherein at least one of the plurality of processing cells comprise a substrate bevel edge clean processing cell.
- 9. The electrochemical processing cell of claim 1, further comprising at least one annealing chamber in communication with the system platform.
- 10. The electrochemical processing cell of claim 9, wherein the anneal chamber includes at least one heating position and at least one cooling position.
- 11. The electrochemical processing cell of claim 10, wherein the annealing chamber further comprises a substrate transfer robot positioned between the at least one heating position and the at least one cooling position, the substrate transfer robot is configured to transfer substrates between the heating and cooling positions.
- 12. The electrochemical processing system of claim 1, wherein the fluid delivery system is further configured to supply an anolyte to an anode chamber of at least one plating cell positioned on the system platform.
- 13. An electrochemical processing system, comprising:
a processing system base having a plurality of process cell locations thereon; at least two electrochemical plating cells positioned at two of the process cell locations; at least one spin rinse dry cell positioned at one of the process cell locations; at least one substrate bevel clean cell positioned at another one of the process cell locations; and a multiple chemistry plating solution delivery system in fluid communication with the at least two electrochemical processing cells, the multiple chemistry plating solution delivery system comprising:
a metering pump; a plurality of plating solution additive containers in fluid communication with the metering pump; at least one first virgin electrolyte solution container in fluid communication with the metering pump; and a plating solution distribution manifold in fluid communication with an output of the metering pump and selectively in individual fluid communication with each of the at least two electrochemical plating cells.
- 14. The electrochemical processing system of claim 13, further comprising a factory interface in communication with the processing system base.
- 15. The electrochemical processing system of claim 13, further comprising at least one annealing chamber in communication with at least one of the factory interface and the processing base.
- 16. The electrochemical processing system of claim 15, wherein the at least one annealing chamber comprises a heating location, a cooling location, and a robot positioned to transfer substrates between the heating location and the cooling location.
- 17. The electrochemical processing system of claim 13, wherein the plurality of plating solution additive containers comprise a bulk container in fluid communication with a buffer container, the buffer container being in fluid communication with the metering pump.
- 18. The electrochemical processing system of claim 13, wherein the metering pump comprises a precise fluid delivery pump having a plurality of inputs and at least one output, the metering pump being configured to mix a predetermined ratio of fluid components received at the plurality of inputs and output the predetermined ratio of fluid components from the at least one output.
- 19. The electrochemical processing system of claim 13, wherein the multiple chemistry plating solution delivery system further comprises a second virgin electrolyte solution container in fluid communication with the metering pump, the second virgin electrolyte solution container being configured to provide a second virgin electrolyte that is different from a first virgin electrolyte contained in the at least one first virgin electrolyte container.
- 20. An electrochemical processing system, comprising:
a plurality of electrochemical processing cells positioned on a system base; and means for delivering a plurality different electrochemical plating solutions to each of the plurality of electrochemical processing cells.
- 21. The electrochemical processing system of claim 20, further comprising:
a factory interface location in communication with the system base; at least one substrate rinse and spin location positioned on the system base; at least one substrate bevel clean location positioned on the system base; an annealing location positioned in communication with the system base; and at least one substrate transfer robot positioned to transfer substrates between various locations of the electrochemical processing system.
- 22. A method for electrochemically plating at least one layer onto a semiconductor substrate, comprising:
positioning the substrate in a first electrochemical plating cell on a unitary plating system platform for a first plating operation; positioning the substrate in a second plating cell on the unitary plating system platform for a second plating operation; supplying a first electrochemical plating chemistry to the first plating cell with a multiple chemistry fluid delivery system; and supplying a second electrochemical plating chemistry to the second plating cell with the multiple chemistry fluid delivery system, wherein the first and second chemistries are different.
- 23. The method of claim 22, wherein the first and second electrochemical plating chemistries have different virgin makeup solution bases.
- 24. The method of claim 22, wherein the first and second electrochemical plating chemistries have different additive concentrations.
- 25. The method of claim 22, wherein the first electrochemical plating chemistry is an optimized gap fill chemistry and wherein the second electrochemical plating chemistry is an optimized bulk fill chemistry.
- 26. The method of claim 22, wherein the first electrochemical plating chemistry is an optimized plating on barrier chemistry and wherein the second electrochemical plating chemistry is an optimized feature fill planarization chemistry.
- 27. The method of claim 22, wherein the first electrochemical plating chemistry is an optimized alloy plating chemistry and wherein the second electrochemical plating chemistry is an optimized copper plating chemistry.
- 28. The method of claim 22, further comprising rinsing the semiconductor substrate between the first plating operation and the second plating operation.
- 29. The method of claim 28, further comprising spin drying the semiconductor substrate between the first plating operation and the second plating operation.
- 30. The method of claim 22, wherein the first plating operation is a copper plating process and the second plating operation is an alloy plating process.
- 31. The method of claim 22, wherein the first plating operation comprises a defect reduction plating process.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of U.S. provisional patent application serial No. 60/435,121, filed Dec. 19, 2002, which is herein incorporated by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60435121 |
Dec 2002 |
US |