Claims
- 1. Projection forming method to transfer a mask pattern, in which a profile long in one direction is repeatedly formed so that a line and space pattern is formed by exposure to light, which is linearly polarized in a longitudinal direction of the line of said line and space pattern, using a projection lens.
- 2. The projection forming method according to claim 1, wherein said pattern is a phase shift mask pattern.
- 3. The projection forming method according to claim 1, wherein said exposure light is projected to said profile in such a manner that an incident surface of said exposure light is perpendicular to the direction of the line of the line and space pattern, and the primary direction of said exposure light is oblique on said incident surface.
- 4. A projection forming method comprising the steps of:
- providing a mask having a pattern with a long profile extending in one direction so that a line and space pattern is formed;
- providing a polarized light, which is linear in a longitudinal direction of the line of said line and space pattern;
- exposing said mask to said light; and
- transferring said pattern of said mask onto a resist on a wafer using a projection lens.
Priority Claims (5)
Number |
Date |
Country |
Kind |
4-141548 |
Jun 1992 |
JPX |
|
4-141755 |
Jun 1992 |
JPX |
|
4-182913 |
Jun 1992 |
JPX |
|
4-267415 |
Oct 1992 |
JPX |
|
5-060593 |
Mar 1993 |
JPX |
|
Parent Case Info
This is a divisional, of Ser. No. 08/510,128 filed on Aug. 1, 1995 now U.S Pat. No. 5,607,821 which is a divisional application of Ser. No. 08/069,853 filed on Jun. 1, 1993 now U.S. Pat. No. 5,465,220.
US Referenced Citations (29)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0486316A3 |
May 1992 |
EPX |
Divisions (2)
|
Number |
Date |
Country |
Parent |
510128 |
Aug 1995 |
|
Parent |
069853 |
Jun 1993 |
|