Claims
- 1. A fluorine-containing polymer comprising a repeat unit derived from a comonomer having the structure:
- 2. The fluorine containing polymer of claim 1 further comprising a repeat unit derived from at least one ethylenically unsaturated compound containing at least one fluorine atom covalently attached to an ethylen ical ly unsaturated carbon atom.
- 3. The fluorine containing polymer of claim 2 wherein the ethylenically unsaturated compound is selected from the group consisting of tetrafluoroethylene, chlorotrifluoroethylene, hexafluoropropylene, trifluoroethylene, vinylidene fluoride, vinyl fluoride, perfluoro—(2,2-dimethyl-1,3-dioxole), perfluoro-(2-methylene-4-methyl-1,3-dioxolane, CF2═CFO(CF2)tCF═CF2, where t is 1 or 2, and RfOCF═CF2 wherein Rf is a saturated fluoroalkyl group of from 1 to about 10 carbon atoms.
- 4. The fluorine containing polymer of claim 3 wherein the ethylenically unsaturated compound is tetrafluoroethylene or chlorotrifluoroethylene.
- 5. The fluorine containing polymer of claim 1 wherein Rf is selected from the group consisting of CF3, C2F5 and C3F7.
- 6. A photoresist comprising:
(a) a fluorine-containing polymer comprising a repeat unit derived from a comonomer having the structure: 26wherein m is 0, 1 or 2; R1 to R8 are the same or different and each represents a hydrogen atom, a halogen atom, a carboxyl group, a hydrocarbon group of 1 to about 20 carbon atoms or a heteroatom substituted hydrocarbon group of 1 to about 20 carbon atom, the heteroatom being one or more oxygen atoms, nitrogen atoms or sulfur atoms; X is an oxygen atom or a direct bond; Rf is a straight chain or branched perfluoroalkyl group of from 1 to about 10 carbon atoms; and (b) a photoactive component, wherein the fluorine-containing polymer contains sufficient acid or base functionality to render the photoresist developable so as to produce relief images, upon imagewise exposure to ultraviolet radiation having a wavelength of ≦365 nm.
- 7. The photoresist of claim 6 wherein the fluorine-containing polymer further comprises a repeat unit derived from at least one ethylenically unsaturated compound containing at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom.
- 8. The photoresist of claim 7 wherein the ethylenically unsaturated compound is selected from the group consisting of tetrafluoroethylene, chlorotrifluoroethylene, hexafluoropropylene, trifluoroethylene, vinylidene fluoride, vinyl fluoride, perfluoro—(2,2-dimethyl-1,3-dioxole), perfluoro-(2-methylene-4-methyl-1,3-dioxolane, CF2═CFO(CF2)tCF═CF2, where t is 1 or 2, and RfOCF═CF2 wherein Rf is a saturated fluoroalkyl group of from 1 to about 10 carbon atoms.
- 9. The photoresist of claim 8 wherein the ethylenically unsaturated compound is tetrafluoroethylene or chlorotrifluoroethylene.
- 10. The photoresist of claim 6 wherein Rf is selected from the group consisting of CF3, C2F5 and C3F7.
- 11. The photoresist of claim 6 further comprising a solvent.
- 12. The photoresist of claim 6 wherein the photoactive component is a photoacid generator or a photobase generator.
- 13. The photoresist of claim 6 further comprising a dissolution inhibitor.
- 14. A process for preparing a photoresist image on a substrate comprising, in order:
(W) applying a photoresist composition on a substrate, wherein the photoresist composition comprises
(a) the fluorine-containing polymer of claim 1; and (b) a photoactive component, and (c) a solvent; (X) drying the coated photoresist composition to substantially remove the solvent and thereby to form a photoresist layer on the substrate; (Y) imagewise exposing the photoresist layer to form imaged and non-imaged areas; and (Z) developing the exposed photoresist layer having imaged and non-imaged areas to form the relief image on the substrate.
- 15. The process of claim 14 wherein the exposed layer is developed with an aqueous alkaline developer.
- 16. The process of claim 14 wherein imagewise exposing the photoresist layer is performed with ultraviolet radiation having wavelength of 193 nm.
- 17. The process of claim 14 wherein imagewise exposing the photoresist layer is performed with ultraviolet radiation having wavelength of 157 nm.
- 18. The photoresist of claim 1 wherein the functionality is selected from the group consisting of a carboxylic acid and a protected acid group.
- 19. An article of manufacture comprising a substrate having coated thereon a photoresist comprising:
(a) a fluorine-containing polymer comprising a repeat unit derived from a comonomer having the structure: 27wherein m is 0, 1 or 2; R1 to R8 are the same or different and each represents a hydrogen atom, a halogen atom, a carboxyl group, a hydrocarbon group of 1 to about 20 carbon atoms or a heteroatom substituted hydrocarbon group of 1 to about 20 carbon atom, the heteroatom being one or more oxygen atoms, nitrogen atoms or sulfur atoms;
X is oxygen or a direct bond; Rf is a straight chain or branched perfluoroalkyl group of from 1 to 10 carbon atoms; and (b) a photoactive component, wherein the fluorine-containing polymer contains sufficient functionality to render the photoresist developable so as to produce relief images, upon imagewise exposure to ultraviolet radiation having a wavelength of ≦365 nm.
- 20. The article of claim 19 wherein the substrate is a microelectronic wafer.
RELATED APPLICATIONS
[0001] This is a Continuation-in-Part of U.S. Ser. No. 09/806,096 filed on Mar. 23, 2001 which is incorporated by reference in its entirety.
[0002] Provisional application Serial No. 60/280,268 filed on Mar. 30, 2001 is herein incorporated by reference in its entirety.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60101502 |
Sep 1998 |
US |
|
60280268 |
Mar 2001 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/US99/21912 |
Sep 1999 |
US |
Child |
09806096 |
Mar 2001 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09806096 |
Mar 2001 |
US |
Child |
10108935 |
Mar 2002 |
US |