Patent Application
20210233751
This application claims the priority benefit of Japan Application no. 2019-234389, filed on Dec. 25, 2019. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
The present disclosure relates to, for example, a plasma treatment apparatus for manufacturing a separator for a fuel cell.
As this type of plasma treatment apparatus, Patent literature 1 discloses a so-called roll-to-roll type in which a base material wound on a delivery roll is delivered, a film is formed thereon by a plasma treatment, and the base material on which the film is formed is wound up by a winding roll.
Since such a roll-to-roll type plasma treatment apparatus can perform a continuous film forming treatment, it has advantages such as a high treatment speed and a high manufacturing efficiency.
However, when a film is formed on a base material which is difficult to wind on a roll, for example, such as a base material having irregularities or a thick base material, there is a problem that it is difficult to apply the above-described roll-to-roll type apparatus.
Therefore, the present disclosure has been made to solve the above-described problems, and is for enabling a continuous plasma treatment even for a base material which is difficult to wind on a roll.
That is, a plasma treatment apparatus according to the present disclosure includes a plurality of plasma treatment chambers in which a plasma treatment is performed on a base material, a tray configured to hold the base material in a standing posture, and a lift mechanism configured to continuously convey the tray to the plurality of plasma treatment chambers.
According to the plasma treatment apparatus having such a configuration, since the tray holding the base material is continuously conveyed to the plurality of plasma treatment chambers by the lift mechanism, a film formation treatment can be performed continuously even when the base material is difficult to wind on a roll.
The plurality of plasma treatment chambers may communicate with each other, and a differential exhaust chamber may be provided between the chambers.
With such a configuration, the trays can be continuously conveyed, and each of the plasma treatment chambers can be maintained at a desired degree of vacuum by communicating the plurality of plasma treatment chambers with each other.
To make the lift mechanism a simple configuration, the lift mechanism preferably include a rope which spans the plurality of plasma treatment chambers and on which the tray is hooked, and a drive source which moves the rope between the plurality of plasma treatment chambers.
A plurality of the trays may be installed, and a conveyance mechanism which sequentially conveys the trays to the rope may be further included.
With such a configuration, a plurality of trays can be automatically delivered in sequence, a film can be continuously formed on a large number of base materials held in the plurality of trays at once, and higher efficiency can be achieved.
As an aspect for realizing such automatic delivery of the trays, the conveyance mechanism may have an endless belt that feeds the tray to the rope, and a hooking part provided on the tray may be hooked on the rope and the tray may be suspended from the rope as the tray falls from an edge of the endless belt.
A plasma cleaning chamber in which the base material is plasma-cleaned, an ion implantation chamber in which carbon ions are implanted into the base material, a first film formation chamber in which a DLC film is formed on one surface of the base material, a second film formation chamber in which a DLC film is formed on the other surface of the base material, and a hydrophilic treatment chamber in which the base material is hydrophilically treated with oxygen plasma may be provided as the plasma treatment chamber, and the lift mechanism may convey the tray to the plasma cleaning chamber, the ion implantation chamber, the first film formation chamber, the second film formation chamber, and the hydrophilic treatment chamber in that order.
With such a configuration, since the tray holding the base material in the standing posture is conveyed to the plasma cleaning chamber, the ion implantation chamber, the first film formation chamber, the second film formation chamber, and the hydrophilic treatment chamber, the plasma treatment can be performed on both surfaces of the base material in each of the chambers, and a DLC film can be efficiently formed on the base material.
As a more specific aspect for plasma-treating both surfaces of the base material, in each of the plasma cleaning chamber, the ion implantation chamber, and the hydrophilic treatment chamber, at least a pair of antennas which generates plasma in the chamber may be provided at positions at which the base material is sandwiched therebetween.
According to the present disclosure having such a configuration, it is possible to enable a continuous plasma treatment even for a base material which is difficult to wind on a roll.
An embodiment of a plasma treatment apparatus according to the present disclosure will be described below with reference to the drawings.
The plasma treatment apparatus of the present embodiment is a continuous film forming apparatus capable of continuously forming a film on a plurality of sheets of base materials. Hereinafter, a case in which a gas barrier film used for manufacturing a separator for a fuel cell or the like and having corrosion resistance to an acid or an alkali is formed on a base material will be described as an example. The base material is, for example, an aluminum substrate or the like, and the gas barrier film is, for example, a DLC film which has conductivity and curbs penetration of sulfuric acid water which causes corrosion. However, the base material and the film formed on the base material are not limited to the following embodiments, and may be appropriately changed.
As shown in
Specifically, as shown in
The tray delivery chamber S1 is a chamber for accommodating a plurality of trays Y and sequentially delivering the trays Y to each of treatment chambers which will be described later. Air in the tray delivery chamber S1 is exhausted by a suction mechanism P such as a vacuum pump, and thus the tray delivery chamber S1 is maintained at a predetermined degree of vacuum.
The plasma cleaning chamber S2 is a treatment chamber in which the base material X held in the tray Y is loaded along with the tray Y delivered from the tray delivery chamber S1 and is plasma-cleaned. Specifically, in the plasma cleaning chamber S2, at least a pair of antennas 2 is provided at positions at which the base material X is sandwiched therebetween, and in this embodiment, two sets of the inductively coupled antennas 2 are arranged and provided in a conveying direction. Then, inductively coupled discharge plasma containing argon ions is generated in the vicinity of a front surface and a back surface of the base material X by applying high-frequency power from a high-frequency power source (not shown) to the antennas 2 via a matching device (not shown) and supplying argon gas into the chamber as a cleaning gas. One surface (hereinafter, also referred to as a front surface) and the other surface (hereinafter, also referred to as a back surface) of the base material X are cleaned by this argon plasma.
The ion implantation chamber S3 is a treatment chamber in which the base material X held in the tray Y is loaded along with the tray Y delivered from the plasma cleaning chamber S2, and carbon ions are implanted into the base material X. This ion implantation is a treatment for forming nuclei (like hair roots in hair) on the base material X in order to improve adhesion of the DLC film which will be described later. Specifically, in the ion implantation chamber S3, at least a pair of antennas 2 are provided at positions at which the base material X is sandwiched therebetween, and in this embodiment, two sets of the pair of inductively coupled antennas 2 are arranged and provided in the conveying direction. The discharge plasma of the inductively coupled antenna 2 containing carbon ions is generated in the vicinity of the front surface and the back surface of the base material X by applying high-frequency power from the high-frequency power source (not shown) to the antennas 2 via the matching device (not shown) and supplying a carbon compound gas such as methane into the chamber as a raw material gas. Additionally, carbon ions are implanted into the front surface and the back surface of the base material X and thus nuclei which contribute to improving the adhesion of the DLC film are formed by applying a negative DC voltage or a negative pulse voltage from a bias power source (not shown) to the base material X.
The first film formation chamber S4 is a treatment chamber in which the base material X held in the tray Y is loaded along with the tray Y delivered from the ion implantation chamber S3, and a DLC film is formed on one surface (the front surface) of the base material X. Specifically, in the first film formation chamber S4, one or a plurality of antennas 2 is provided on the front surface side of the base material X, and in this embodiment, five inductively coupled antennas 2 are arranged and provided in the conveying direction. On the other hand, a heater 3 is provided on the back surface side of the base material X.
Then, inductively coupled discharge plasma containing carbon ions is generated in the vicinity of the front surface of the base material X by applying high-frequency power from the high-frequency power source (not shown) to the above-described antennas 2 via the matching device (not shown) and supplying a mixed gas of, for example, nitrogen, methane, and acetylene as a raw material gas into the chamber. At this time, in order to make the DLC film conductive, the base material X is basically heated to, for example, 150 to 400° C. by the above-described heater 3. Then, a conductive DLC film is formed on the front surface of the base material X by applying a negative DC voltage or a negative pulse voltage from the bias power source (not shown) to the base material X and additionally heating the base material X with the heater 3 or ion energy in the plasma.
The second film formation chamber S5 is a treatment chamber in which the base material X held in the tray Y is loaded along with the tray Y delivered from the first film formation chamber S4, and the DLC film is formed on the other surface (the back surface) of the base material X. Specifically, in the second film formation chamber S5, one or a plurality of antennas 2 is provided on the back surface side of the base material X, and in this embodiment, five inductively coupled antennas 2 are arranged and provided in the conveying direction. On the other hand, the heater 3 is provided on the front surface side of the base material X.
Then, inductively coupled discharge plasma containing carbon ions is generated in the vicinity of the back surface of the base material X by applying high-frequency power from the high-frequency power source (not shown) to the above-described antennas 2 via the matching device (not shown) and supplying a mixed gas of, for example, nitrogen, methane, and acetylene as a raw material gas into the chamber. At this time, in order to make the DLC film conductive, the base material X is basically heated to, for example, 150 to 400° C. by the above-described heater 3. Then, a conductive DLC film is formed on the back surface of the base material X by applying a negative DC voltage or a negative pulse voltage from the bias power source (not shown) to the base material X and additionally heating the base material X with the heater 3 or ion energy in the plasma.
The hydrophilic treatment chamber S6 is a treatment chamber in which the base material X held in the tray Y is loaded along with the tray Y delivered from the second film formation chamber S5, and the base material X is subjected to a hydrophilic treatment to be given hydrophilicity. Specifically, in the hydrophilic treatment chamber S6, at least a pair of antennas 2 is provided at positions at which the base material X is sandwiched therebetween, and in this embodiment, one set of the pair of inductively coupled antennas 2 is provided. Then, inductively coupled discharge plasma containing oxygen ions is generated in the vicinity of the front surface and the back surface of the base material X by applying high-frequency power from the high-frequency power source (not shown) to the antennas 2 via the matching device (not shown) and supplying oxygen gas into the chamber. The front surface and the back surface of the base material X are subjected to the hydrophilicity treatment by this oxygen plasma.
The tray storage chamber S7 is a chamber in which the base material X held in the tray Y is loaded along with the tray Y delivered from the hydrophilic treatment chamber S6 and stored. Air in the tray storage chamber S7 is exhausted by a suction mechanism P such as a pump, and the tray storage chamber S7 is maintained at a predetermined degree of vacuum.
The tray delivery chamber S1, the plasma cleaning chamber S2, the ion implantation chamber S3, the first film formation chamber S4, the second film formation chamber S5, the hydrophilic treatment chamber S6, and the tray storage chamber S7 communicate with each other. A differential exhaust chamber S8 in which air is exhausted by a suction mechanism P1 such as a common pump is interposed between the plasma cleaning chamber S2 and the ion implantation chamber S3, between the ion implantation chamber S3 and the first film formation chamber S4, and between the second film formation chamber S5 and the hydrophilic treatment chamber S6. Then, each of these chambers is communicated by a slit (not shown) through which the tray Y can pass, and thus air in the plasma cleaning chamber S2, the ion implantation chamber S3, the first film formation chamber S4, the second film formation chamber S5, and the hydrophilic treatment chamber S6 is differentially exhausted. Accordingly, each of the plasma treatment chambers S2 to S6 can be maintained at a predetermined degree of vacuum without providing a gate valve or the like between the chambers.
The lift mechanism 10 continuously conveys the tray Y to a plurality of plasma treatment chambers S2 to S6. Here, the lift mechanism 10 conveys the tray Y to the plasma cleaning chamber S2, the ion implantation chamber S3, the first film formation chamber S4, the second film formation chamber S5, and the hydrophilic treatment chamber S6 in that order, and more specifically, conveys the tray from the tray delivery chamber S1 to the tray storage chamber S7.
Specifically, as shown in
Here, as shown in
The rope 11 allows the hooking part Ya of the tray Y to be hooked thereon, is made of, for example, a metal, a glass fiber, a carbon fiber, or the like, and is a stainless steel rope here.
In this embodiment, the rope 11 is provided to be spanned across each of the chambers from the tray delivery chamber S1 to the tray storage chamber S7, to move above each of the chambers from the tray delivery chamber S1 to the tray storage chamber S7, then to move below each of the chambers from the tray storage chamber S7 to the tray delivery chamber S1, and to be circulated through each of these chambers.
Further, as shown in
In this conveyance mechanism 12, the plurality of trays Y is placed, and the trays Y are sequentially conveyed toward the rope 11. Specifically, the conveyance mechanism 12 includes, for example, a pair of rollers 13 and an endless belt 121 wound around the rollers 13.
A relative positional relationship between the conveyance mechanism 12 and the above-described rope 11 is set so that, the hooking part Ya of the tray Y is hooked on the rope 11 and the tray Y is suspended from the rope 11 as the tray Y falls from an edge of the endless belt 121.
More specifically, the tray Y placed on the endless belt 121 and moving toward the rope 11 gradually starts to descend along a surface of the roller 13 when passing the apex of the front roller 13 around which the endless belt 121 is wound, and is in a tilted posture of tilting forward. Then, the rope 11 and the endless belt 121 are disposed so that the hooking part Ya of the tray Y is hooked on the rope 11 before the tray Y falls.
Further, the plasma treatment apparatus 100 of the present embodiment further includes an unloading mechanism (not shown) which sequentially receives the tray Y from the rope after the film forming treatment.
The unloading mechanism has the same configuration as that of the conveyance mechanism 12 shown in
That is, the unloading mechanism includes, for example, a pair of rollers and an endless belt wound around the rollers. Then, the tray Y sent by the rope 11 is lifted by being placed on the endless belt, thus the hooking part Ya of the tray Y is separated from the rope 11, and the tray Y is collected.
With such a configuration, the plurality of trays Y placed on a delivery path 12 is delivered toward the rope 11, automatically sequentially transfer to the rope 11, and then are automatically sequentially conveyed to the above-described various plasma treatment chambers S2 to S6 by the movement of the rope 11 due to the drive source (not shown) such as a motor.
Then, a negative DC voltage or a negative pulse voltage (a bias voltage) from the above-described bias power source (not shown) is applied to the rope 11, and this bias voltage is applied to the base material X via the rope 11 and the tray Y suspended from the rope 11.
According to the plasma treatment apparatus 100 of the present embodiment having such a configuration, since the tray Y holding the base material X can be continuously conveyed to the plurality of plasma treatment chambers S2 to S6 by the lift mechanism 10, even when the base material X is difficult to wind up, a continuous film formation treatment can be performed. Of course, it goes without saying that the plasma treatment apparatus 100 can be applied to the base material X which is not difficult to wind up.
Further, since the plurality of plasma treatment chambers S2 to S6 communicates with each other and the air in the respective chambers is differentially exhausted, the tray Y can be continuously conveyed and the respective plasma treatment chambers S2 to S6 can be maintained at a desired degree of vacuum by communicating the plurality of plasma treatment chambers S2 to S6 with each other.
Further, since the lift mechanism 10 is configured using the rope 11 spanning the plurality of plasma treatment chambers S2 to S6 and the tray Y can be hooked on the rope 11, the lift mechanism 10 can have a simple structure.
Moreover, since the delivery path 12 sequentially delivers the plurality of trays Y to the rope 11, the delivery of the plurality of trays Y can be automated, the film can be continuously formed on a large number of base materials X held in the plurality of trays Y at once, and thus further high efficiency can be achieved.
Moreover, since the conveyance mechanism 12 includes the endless belt 121 which delivers the tray Y to the rope 11, and is configured so that, the hooking part Ya provided on the tray Y is hooked on the rope 11 and the tray Y is suspended from the rope 11 as the tray Y falls from an edge of the endless belt 121. As a result, automatic delivery of the trays Y can be realized with a simple configuration.
In addition, since the tray Y holding the base material X in the standing posture is conveyed to the plasma cleaning chamber S2, the ion implantation chamber S3, the first film formation chamber S4, the second film formation chamber S5, and the hydrophilic treatment chamber S6, and the pair of antennas 2 is provided in the plasma cleaning chamber S2, the ion implantation chamber S3, and the hydrophilic treatment chamber S6 to sandwich the base material X, both surfaces of the base material X can be plasma-treated in each of the chambers, and the DLC film can be formed more efficiently than in the related art.
The present disclosure is not limited to the above-described embodiment.
For example, in the above-described embodiment, the rope 11 has been described as a stainless steel rope, but when the rope 11 is made of a conductive material such as a metal or a carbon fiber, since a bias voltage is applied to the base material X via the rope 11, bias voltages having the same magnitude are simultaneously applied to the plurality of base materials X held in separate trays Y.
On the other hand, the rope 11 may be made of a non-conductive material such as a glass rope. In this case, as shown in
With such a configuration, bias voltages having different magnitudes can be applied to the base material X in the respective plasma treatment chambers S2 to S6. A bias voltage having a magnitude suitable for the process in each of the plasma treatment chambers S2 to S6 can be applied to the base material X, a degree of freedom in the film formation process can be improved, and as a result, a higher quality film can be formed.
Further, in the above-described embodiment, although the rope 11 is provided to pass above and below the plasma treatment chambers S2 to S6, the arrangement of the rope 11 is not limited thereto, and as shown in
Further, the base material X is not limited to aluminum, and may have at least one kind of a metal among alloys such as nickel (Ni), iron (Fe), magnesium (Mg), titanium (Ti), and stainless steel containing these metals.
Moreover, the formation of the gas barrier film is not limited to that described in the above embodiment, and for example, a plasma CVD method, a vacuum vapor deposition method, a sputtering method, an ion plating method, or the like may be used.
In addition, it should be appreciated that the present invention is not limited to any of the above-described embodiments but can be variously modified without departing from the scope thereof.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2019-234389 | Dec 2019 | JP | national |
