Power semiconductor module

Abstract

A power semiconductor module having an increased reliability against thermal fatigue includes a power semiconductor element, a lower-side electrode connected to the lower side of the element, a first insulating substrate connected to the upper side of the lower-side electrode and having metallic foils bonded on both surfaces thereof, an upper-side electrode connected to the upper side of the power semiconductor element, a second insulating substrate connected to the upper side of the upper-side electrode and having metallic foils bonded on both surfaces thereof, a first heat spreader connected to the lower side of the first insulating substrate, and a second heat spreader connected to the upper side of the second insulating substrate. The power semiconductor element and the first and second insulating substrates are sealed with a resin.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a vertical cross-sectional view of a power semiconductor module in accordance with an embodiment 1;

FIGS. 2A and 2B are horizontal cross-sectional views of the power semiconductor module of the embodiment 1;

FIG. 3 is a cross-sectional view of a power semiconductor module in accordance with an embodiment 2;

FIG. 4 is a vertical cross-sectional view of a power semiconductor module in accordance with an embodiment 3;

FIGS. 5A and 5B are horizontal cross-sectional views of the power semiconductor module of the embodiment 3;

FIG. 6 is a vertical cross-sectional view of a power semiconductor module in accordance with an embodiment 4;

FIGS. 7A and 7B are horizontal cross-sectional views of the power semiconductor module of the embodiment 4; and

FIG. 8 is a cross-sectional view of a power semiconductor module in accordance with an embodiment 5.

Claims

1. A power semiconductor module comprising: a power semiconductor element;a lower-side electrode connected to a lower side of the power semiconductor element;a first insulating substrate connected to a lower side of the lower-side electrode and having metallic foils bonded on both surfaces thereof;an upper-side electrode connected to an upper side of the power semiconductor element;a second insulating substrate connected to an upper side of the upper-side electrode and having metallic foils bonded onto both surfaces thereof;a first heat spreader connected to a lower side of the first insulating substrate; anda second heat spreader connected to an upper side of the second insulating substrate,wherein the power semiconductor element, the first insulating substrate, and the second insulating substrate are sealed with resin.

2. A power semiconductor module according to claim 1, wherein a thickness of a part of the upper-side electrode bonded to the upper part of the power semiconductor element is larger than that of a part of the upper-side electrode not bonded to the upper part of the power semiconductor element.

3. A power semiconductor module according to claim 1, wherein at least any of the upper-side electrode and the lower-side electrode is made of a copper-carbon composite material (Cu—C).

4. A power semiconductor module according to claim 1, wherein a high temperature solder having copper and tin particles mixed therein is used as a solder for bonding the power semiconductor element and the upper-side electrode or the lower-side electrode and as a solder for bonding the upper-side electrode or the lower-side electrode and the first or second insulating substrate; and a solder having a melting temperature lower than that of the high temperature solder is used as a solder for bonding the first or second insulating substrate and the first or second heat spreader.

5. A power semiconductor module according to claim 1, wherein the first insulating substrate is different in shape from the second insulating substrate, and the adjacent power semiconductor elements are arranged so that currents flowing through the adjacent power semiconductor elements and through the first insulating substrate are opposed in direction to each other.

6. A power semiconductor module comprising: a power semiconductor element;a first insulating substrate connected to a lower side of the power semiconductor element and having metallic foils bonded to both surfaces thereof;an upper-side electrode connected to an upper side of the power semiconductor element;a second insulating substrate connected to an upper side of the upper-side electrode and having metallic foils bonded to both surfaces thereof;a first heat spreader connected to a lower side of the first insulating substrate; anda second heat spreader connected to an upper side of the second insulating substrate,wherein the power semiconductor element, the first insulating substrate, and the second insulating substrate are sealed with resin.

7. A power semiconductor module according to claim 6, wherein a thickness of a part of the upper-side electrode bonded to the upper part of the power semiconductor element is larger than that of a part of the upper-side electrode not bonded to the upper part of the power semiconductor element.

8. A power semiconductor module according to claim 6, wherein at least the upper-side electrode is made of a copper-carbon composite material (Cu—C).

9. A power semiconductor module according to claim 6, wherein a high temperature solder having copper and tin particles mixed therein is used as a solder for bonding the power semiconductor element and the upper-side electrode and as a solder for bonding the upper-side electrode and the metallic foil bonded to the second insulating substrate, a solder having a melting point lower than that of the high temperature solder is used as a solder for bonding the first or second insulating substrate and the first or second heat spreader.

10. A power semiconductor module according to claim 6, wherein the first insulating substrate is different in shape from the second insulating substrate, and the adjacent power semiconductor elements provided on the fist insulating substrate are arranged so that currents flowing through the adjacent power semiconductor elements are opposed in direction to each other.

11. A power semiconductor module comprising: power semiconductor element;a first insulating substrate connected to a lower side of the power semiconductor element and having metallic foils bonded to both surfaces thereof;a second insulating substrate connected to an upper side of the power semiconductor element and having metallic foils bonded to both surfaces thereof;a first heat spreader connected to a lower side of the first insulating substrate; anda second heat spreader connected to an upper side of the second insulating substrate,wherein a thickness of a part of the metallic foil bonded to the second insulating substrate which is bonded to the power semiconductor element is larger than a thickness of a part of the metallic foil not bonded to an upper part of the power semiconductor element, and the power semiconductor element, the first insulating substrate, and the second insulating substrate are sealed with resin.

12. A power semiconductor module according to claim 11, wherein a high temperature solder having copper and tin particles mixed therein is used as a solder for bonding the power semiconductor element and the metallic foil bonded to the first insulating substrate and as a solder for bonding the power semiconductor element and the metallic foil bonded to the second insulating substrate, and a solder having a melting temperature lower than that of the high temperature solder is used as a solder for bonding the first or second insulating substrate and the first or second heat spreader.

13. A power semiconductor module according to claim 11, wherein the first insulating substrate connected to the lower side of the power semiconductor element and having the metallic foils bonded at both surfaces thereof is different in shape from the second insulating substrate connected to the upper side of the power semiconductor element and having the metallic foils bonded to both surfaces thereof, and the adjacent power semiconductor elements provided on the first insulating substrate are arranged so that currents flowing through the power semiconductor elements are opposed in direction to each other.

14. A power semiconductor module comprising: a power semiconductor element;a first insulating substrate connected to a lower side of the power semiconductor element and having metallic foils bonded on both surfaces thereof;an upper-side electrode connected to an upper side of the power semiconductor element;a first heat spreader connected to a lower side of the first insulating substrate; anda second heat spreader bonded to an upper side of the upper-side electrode with an electrically-insulating resin material,wherein the power semiconductor element and the first insulating substrate are sealed with resin.

15. A power semiconductor module according to claim 14, wherein the resin for sealing the power semiconductor element and the first insulating substrate is an epoxy-based resin.

16. A power semiconductor module according to claim 15, wherein the power semiconductor element, the metallic foil of the first insulating substrate, and the upper-side electrode are covered with a polyimide-based resin or a polyamide-imide-based resin.

17. A power semiconductor module according to claim 16, wherein the epoxy resin has a linear expansion coefficient of 7×10−6/K to 20×10−6/K and has a Young's modulus of 5 Gpa to 20 Gpa.

18. A power semiconductor module according to claim 14, wherein the power semiconductor element is a silicon carbide element.

19. A power semiconductor module according to claim 14, wherein the power semiconductor element is a gallium nitride element.