Pressing of wire bond wire tips to provide bent-over tips

Information

  • Patent Grant
  • 10806036
  • Patent Number
    10,806,036
  • Date Filed
    Friday, January 19, 2018
    6 years ago
  • Date Issued
    Tuesday, October 13, 2020
    4 years ago
Abstract
In a method for forming a microelectronic device, a substrate is loaded into a mold press. The substrate has a first surface and a second surface. The second surface is placed on an interior lower surface of the mold press. The substrate has a plurality of wire bond wires extending from the first surface toward an interior upper surface of the mold press. An upper surface of a mold film is indexed to the interior upper surface of the mold press. A lower surface of the mold film is punctured with tips of the plurality of wire bond wires for having the tips of the plurality of wire bond wires extending above the lower surface of the mold film into the mold film. The tips of the plurality of wire bond wires are pressed down toward the lower surface of the mold film to bend the tips over.
Description
FIELD

The following description relates to microelectronic devices. More particularly, the following description relates to pressing of wire bond wire tips to provide bent over tips for a microelectronic device.


BACKGROUND

Microelectronic assemblies generally include one or more integrated circuit dies (“ICs”), such as for example one or more packaged ICs (“chips”). One or more of such chips may be mounted on a circuit platform, such as on a wafer for wafer-level-packaging (“WLP”), a package substrate, an interposer, or a carrier. Additionally, one chip may be mounted on another chip for a package-on-package (“PoP”) part.


A chip may include conductive elements, such as pathways, traces, tracks, vias, contacts, pads such as contact pads and bond pads, plugs, nodes, or terminals for example, that may be used for making electrical interconnections with another circuit platform. These arrangements may facilitate electrical connections used to provide functionality of ICs. A chip may be coupled to a circuit platform by bonding, such as bonding traces or terminals, for example, of such circuit platform to bond pads or exposed ends of pins or posts or the like of a chip. Interconnecting of one chip to another chip or to a circuit platform is relevant to reliability.


Accordingly, it would be desirable and useful to provide interconnects that enhance reliability.


BRIEF SUMMARY

A method relates generally to forming a microelectronic device. In such a method, a substrate for the microelectronic device is loaded into a mold press. The substrate has a first surface and a second surface. The second surface is placed on an interior lower surface of the mold press. The substrate has a plurality of wire bond wires extending from the first surface toward an interior upper surface of the mold press. An upper surface of a mold film is indexed to the interior upper surface of the mold press. A lower surface of the mold film is punctured with tips of the plurality of wire bond wires for having the tips of the plurality of wire bond wires extending above the lower surface of the mold film into the mold film. The tips of the plurality of wire bond wires are pressed down toward the lower surface of the mold film to bend the tips over.


Another method relates generally to forming a microelectronic device. In such other method, a substrate for the microelectronic device is loaded into a mold press. The substrate has a first surface and a second surface. The second surface is placed on an interior lower surface of the mold press. The substrate has a plurality of wire bond wires extending from the first surface toward an interior upper surface of the mold press. An upper surface of a mold film is indexed to the interior upper surface of the mold press. A lower surface of the mold film is punctured with tips of the plurality of wire bond wires for having the tips of the plurality of wire bond wires located in the mold film between the upper surface and the lower surface. A molding material is injected between the first surface of the substrate and the lower surface of the mold film. The molding material is cured to provide a molding layer. The mold film is removed from the substrate. The tips of the plurality of wire bond wires are pressed down toward an upper surface of the molding layer to bend the tips over.


An apparatus relates generally to a microelectronic device. In such an apparatus, a substrate has a first surface and a second surface opposite the first surface. The substrate has a plurality of wire bond wires extending from the first surface. The substrate has a mold material layer on the first surface. Tips of the plurality of wire bond wires extend beyond an upper surface of the mold material layer, and the tips are bent over.


Other features will be recognized from consideration of the Detailed Description and Claims, which follow.





BRIEF DESCRIPTION OF THE DRAWING(S)

Accompanying drawing(s) show exemplary embodiment(s) in accordance with one or more aspects of exemplary apparatus(es) or method(s). However, the accompanying drawings should not be taken to limit the scope of the claims, but are for explanation and understanding only.



FIG. 1 is a respective block diagram of a cross-sectional side view depicting an implementation of a microelectronic device.



FIG. 2 is a respective block diagram of a cross-sectional side view depicting an implementation of a microelectronic device.



FIG. 3 is a respective block diagram of a cross-sectional side view depicting an implementation of a microelectronic device.



FIG. 4 is a block diagram of a top-down view of an exemplary microelectronic device.



FIG. 5 is a block diagram of a top-down view of an exemplary microelectronic device after tips have been bent over.



FIG. 6 is an enlarged side view depicting a pair of wire bond wires attached to an upper surface of carrier prior to formation of a molding layer.



FIGS. 7-1 through 7-6 are a progression of block diagrams of a side cutaway view depicting an exemplary manufacturing process having operations for forming a microelectronic device.



FIGS. 8-1 through 8-4 are a progression of block diagrams of a side cutaway view depicting another exemplary manufacturing process having operations for forming a microelectronic device.



FIG. 9 is a block diagram of a side cutaway view depicting another exemplary substrate after a manufacturing process having operations for forming a microelectronic device but with an uppermost portion of an arm of wire bond wires embedded in a mold film.



FIGS. 10-1 and 10-2 are block diagrams of a side cutaway view depicting yet another exemplary substrate after another manufacturing process having operations for forming a microelectronic device but with an upper portion of an arm of wire bond wires, longer than an uppermost portion thereof, embedded in mold film.





DETAILED DESCRIPTION

In the following description, numerous specific details are set forth to provide a more thorough description of the specific examples described herein. It should be apparent, however, to one skilled in the art, that one or more other examples or variations of these examples may be practiced without all the specific details given below. In other instances, well known features have not been described in detail so as not to obscure the description of the examples herein. For ease of illustration, the same number labels are used in different diagrams to refer to the same items; however, in alternative examples the items may be different.


As previously described, chip to chip or wiring platform interconnects are relevant to reliability. As described below, wire bond wire tips may be pressed to provide bent over shaped tips for interconnects for a microelectronic device. These bent over shaped tips may provide anchors for interconnecting a microelectronic device to an IC, a chip, and/or a wiring platform. These anchors may be used to enhance reliability of such interconnects.



FIGS. 1 through 3 are respective block diagrams of cross-sectional side views depicting several implementations of a microelectronic device 100. In each implementation, a substrate 150 for a microelectronic device 100 may include an interposer or carrier 102 and a plurality of wire bond wires 110 generally extending from an upper surface 112 of such carrier 102. Wire bond wires 110 may be BVA™ wires. Such a substrate 150 for a microelectronic device 100 may further include one or more integrated circuit dies 101.


After processing, such substrate 150 may yet further include a molding material layer (“molding layer”) 103. After molding, a substrate 150 may have a lower surface 111 and a generally opposite or opposing upper surface 132 of a molding layer 103, and uppermost portions of wire bond wires 110 of such substrate 150 may extend above upper surface 132.


Wire bond wires 110 may be attached to upper conductive pads 105. Upper conductive pads 105 may be in contact with upper surface 112 of carrier 102, in recesses of carrier 102 associated with upper surface 112, and/or in such recesses and extending above upper surface 112. Conductive interconnects 104, such as solder balls for example, may be attached to lower conductive pads 107. Lower conductive pads 107 may be in contact with lower surface 111 of carrier 102, in recesses of carrier 102 associated with lower surface 111, and/or in such recesses and extending below lower surface 111. Upper and lower conductive pads 105 and 107 may be coupled to one another through conductive vias 106.


Wire bond wires 110 may have a lower portion (“base”) 125, a middle portion (“arm”) 127, and an upper portion (“tip”) 126. Bases 125 may be attached to conductive pads 105, including without limitation traces or other conductive structures associated with carrier 102. Arms 127 may extend from bases 125 to beyond an upper surface 122 of integrated circuit die 101 in molding layer 103. Tips 126 may extend from arms 127 to locations above upper surface 132 of molding layer 103. Molding layer 103 may be injected or otherwise deposited on upper surface 112 of carrier 102. Molding layer 103 may further be injected or otherwise deposited on upper surface 122 of integrated circuit die 101 for encapsulation of integrated circuit die 101.


Bond pads 108 of carrier 102 may be used for wire bonds 109 of lower ends of arched lead-over chip wires 117 to wire bonds 119 of upper ends of wires 117 to bond pads 118 of integrated circuit die 101. In this configuration, a lower surface 121 of integrated circuit die 101 may rest on an upper surface 112 of carrier 102, and bond pads 108 and 118 may respectively be located on upper surfaces 112 and 122.


In the implementation of FIG. 1, arms 127 are generally at a 90 degree angle 123 with respect to upper surface 112. However, in other implementations, such as generally indicated in FIG. 2, angle 123 may be less than or greater than 90 degrees. Furthermore, in FIG. 2, integrated circuit die 101 is illustratively depicted as being coupled to carrier 102 with microbumps 133 and associated pads 134. Optionally, molding layer 103 may not completely encapsulate integrated circuit die 101, as an upper surface 122 may be exposed. Optionally, as illustratively depicted in FIG. 3, attachment of wire bond wires 110 to carrier 102 may be reinforced with intermetallic compound (“IMC”) structures, such as soldered bases 135.


For purposes of clarity and not limitation, many known details, as well as alternative and/or optional configurations, for microelectronic devices 100 have been omitted. Along those lines, various configurations, other than those specifically described, may be used in accordance with the following description.


With reference to FIG. 4, a block diagram of a top-down view of an exemplary microelectronic device 100 is illustratively depicted. In the example, there are two concentric rectangular rings of wire bond wires 110 forming an array 400. However, in other implementations, other numbers of wire bond wires 110, array shapes, array dimensions, and/or other patterns of wire bond wires 110 may be used to provide an array 400.


Tips 126 extend above upper surface 132 of molding layer 103. At an interface between tips 126 and arms 127, there may be ledge 401. Ledges 401 may, though need not be, horizontal surfaces projecting from a wall of tips 126. In FIG. 4, tips 126 have any of four orientations. However, these or other orientations of tips 126 may be used.


With reference to FIG. 5, a block diagram of a top-down view of an exemplary microelectronic device 100 is illustratively depicted, after tips 126 have been bent over. Tips 126 may be bent over to have wall surfaces respectively thereof in contact with or at least proximal to corresponding ledges 401. This bending of tips 126 may be by placing substrate 150 into a molding press, as described below in additional detail. Accordingly, during pressing, tips 126 may be bent over in any of a variety of orientations to provide bent over shapes for wire bond wires 110. Even though four orientations 501 through 504 are illustratively depicted by corresponding arrows for directions tips 126 point after bending, these and/or other orientations may be used. Furthermore, even though orientations 501 through 504 point inwardly with respect to array 400, namely an open space in the center of array 400, in another implementation outwardly pointing tips 126, or a combination of inwardly and outwardly pointing tips 126, may be used.



FIG. 6 is an enlarged side view depicting a pair of wire bond wires 110-1 and 110-2 attached to an upper surface 112 of carrier 102 prior to formation of molding layer 103. Prior to formation of molding layer 103, wire bond wires 110-1 and 110-2 may be attached to pads (not shown in this FIG.) along upper surface 112 via corresponding solder bases 135.


Bases 125 of wire bond wires 110 may have j-like shapes, with bottoms thereof attached to upper surface 112 for forming wire bond wires 110. However, addition of solder bases 135 may provide additional support for enhanced reliability. Wire bond wire 110-2 may have approximately a 90 rotation with respect to orientation of wire bond wire 110-1.


Tips 126 may have a generally horizontal surface, namely ledge 401, extending away from a facing wall surface 602 extending above a corresponding ledge 401. Again, ledges 401 may, though need not be, parallel with upper surface 112. Moreover, wall surfaces 602 may, though need not be, orthogonal to corresponding ledges 401. Furthermore, a wall surface 602 may, though need not be, orthogonal to a plane of upper surface 112. In this example, front facing wall surface 602, as well as back facing wall surface 605, of a tip 126 is slightly tapered to narrow tip 126 toward a top surface 601 thereof. Right and left side surfaces 604 of a tip 126 may both be tapered to widen tip 126 toward a top surface 601 thereof. Along those lines, tip 126 may have a “shovelhead-like” or “fishtail-like” shape with a trapezoidal front facing outline being wider at a distal end than a proximal end to provide such a widened tip 126. This “fishtail-like” shape may be formed when pinching and pulling off a feed wire used to for forming wire bond wires 110. Wire bond wires 110 may be shaped in the formation thereof to provide such a “shovelhead-like” shape with a trapezoidal front facing outline. While a shovelhead-like shape may be used to provide a greater surface area for attachment to an IMC structure, other shapes may likewise be used.


A bending locus may generally be at or slightly above the intersection of ledge 401 and wall surface 602 for a tip 126, namely where a bending radius or bending moment may likely occur when tips 126 are pressed, as described below in additional detail. After pressing or bending of tips 126, such tips may have a bent over shape. Such bent over shapes provided by bent tips 126 may be used as anchors for solder or other IMC structures.



FIGS. 7-1 through 7-6 are a progression of block diagrams of a side cutaway view depicting an exemplary manufacturing process having operations 801 through 806 for forming a microelectronic device 100. FIGS. 7-1 through 7-6 are further described with simultaneous reference to FIGS. 1 through 6, where the example of FIG. 6 is used in FIGS. 7-1 through 7-6 for purposes of clarity by way of example and not limitation.


At operation 801, a substrate 150 for microelectronic device 100 may be loaded or placed into a mold press 700. In this example, mold press 700 has a bottom platen 701 and top platen 702. In this example, bottom platen 701 is movable and top platen 702 is stationary. Optionally, top platen 702 may optionally include a fixed plate 703 slightly raised or offset from lower surface 706 to define an upper interior region 705 within a cavity 710 between platens 701 and 702. Substrate 150 may be loaded into such cavity 710. However, in other implementations, no upper interior region 705 may be present, as bent over tips may be pressed into an upper surface of a deformable mold assist film, as described below in additional detail. For purposes of clarity, known details of a mold press 700 are not described herein.


After loading at 801, wire bond wires 110 of substrate 150 may extend from upper surface 112 toward an interior upper surface of mold press 700, namely a lower surface 704 of plate 703. A lower surface 111 of substrate 150 may be placed on an interior lower surface defining cavity 710, namely an interior upper surface 709 of lower platen 701 of mold press 700.


At operation 802, a mold assist film (“mold film”) 711 may be indexed to a lower surface 706 of top platen 702. Along those lines, an upper surface 712 of a mold film 711 may be brought into contact or conformed to a portion of an interior upper surface, such as lower surface 706 for example, of mold press 700 without leaving a gap between another portion of such interior upper surface, such as interior upper surface 706 for example, of mold press 700 and upper surface 712 of mold film 711. Again, there is no optional gap for upper interior region 705.


At operation 803, mold film 711 may be punctured with tips 126 by moving bottom platen 701 in an upward direction 719. Along those lines, a lower surface 721 and an upper surface 712 of mold film 711 may be punctured with tips 126 of wire bond wires 110 for having tips 126 to have tips 126 bent over into upper surface 712 of mold film 711 deforming such upper surface 712 of mold film 711 into an upper interior region thereof, as generally indicated by arrow 723. In this position, substrate 150 is moved by moving lower platen 701 in an upward direction to cause tips 126 to bend toward and onto upper surface 712, as generally indicated by arrow 723. Optionally, upper platen 702 may be moved in a downward direction as generally indicated by arrow 725. Moreover, optionally both upper platen 702 and lower platen 701 may be moved in directions 719 and 725, respectively. Furthermore, optionally a lateral movement 729 of upper platen 702 may be used to assist bending of tips 126 to reduce likelihood of cracking of wire bond wires 110 due to application of a compressive force. For uses of a lateral movement 729, tips 126 may all have a same orientation.


At operation 804, tips 126 may continue to be pressed in a generally downward direction to provide shaped bent over tips 126 for wire bond wires 110. In this example, bent over tips 126 may be flattened between lower surface 706 of platen 702 and into a deformable upper surface 712 of mold film 711. This pressing of tips 126 may optionally include flattening or coining of tips 126.


Furthermore, in this example, upper surface 712 of mold film 711 may be coplanar with ledges 401. However, in other examples, ledges 401 may extend to or just above upper surface 712, and thus tips 126 may be bent down for stopping on ledges 401 instead of being bent into upper surface 712.


At operation 805, a molding material may be injected between upper surface 112 of substrate 150 and lower surface 721 of mold film 711 for molding layer 103. At operation 806, such molding material may be cured to form molding layer 103, and mold film 711 may be used to assist release of substrate 150 with such molding layer 103 from mold press 700.


After formation and release of substrate 150 from mold press 700, including removal of mold film 711 from substrate 150, there may be a gap 730 between upper surface 132 of molding layer 103 and ledges 401, and this gap 730 may be associated with a partial thickness of mold film 711, namely a lower portion of a distance between surfaces 712 and 721 of mold film 711. Moreover, bent over tips 126 and uppermost portions of arms 127 corresponding to gap 730 may extend above upper surface 132. Thus, lower surfaces of shaped bent over tips 126 may be spaced-away from upper surface 132 of molding layer 103.


In the above example, tips 126 were bent prior to forming a molding layer 103. However, in another implementation, tips 126 may be bent after forming a molding layer 103.


In either order, tips 126 may be pressed down against an upper surface 712 of mold film 711, and such tips 126 may thus be bent over leaving a space between bottom surfaces of such tips 126 and upper surface 132 of molding layer 103 after removal of mold film 711. Again, tips 126 may be shaped prior to loading into mold press 700, and such shaped tips 126 may be to provide bending locations for bending. The above process may generally be thought of as a pressing of tips prior to molding, namely a pressing-before-molding process. The following description may generally be thought of as a pressing-after-molding process.



FIGS. 8-1 through 8-4 are a progression of block diagrams of a side cutaway view depicting an exemplary manufacturing process having operations 903 through 906 for forming a microelectronic device 100. FIGS. 8-1 through 8-4 are further described with simultaneous reference to FIGS. 1 through 7-6, where the example of FIG. 6 is used in FIGS. 8-1 through 8-4 for purposes of clarity by way of example and not limitation.


Prior to operation 903, operations 801 and 802 may be performed as previously described. However, in operation 802 a thicker mold film 711 is indexed to a lower surface of upper platen 702. In the above example of a thinner mold film 711, such mold film thickness may be in a range of approximately 10 to 50 microns, and in the example of a thicker mold film 711, such mold film thickness may be in a range of approximately 50 to 150 microns. In other implementations, these or other ranges may be used. For example, for anchors using bent over tips 126, longer tips may be used and correspondingly thicker molding film to provide more surface area for anchoring at the expense of a larger pitch. Bent over tips 126 may be used as anchors for soldering for example.


At operation 903, this thicker mold film 711 may be punctured with tips 126 by moving either or both lower platen 701 and upper platen 702, as previously described. In this example, lower platen 701 is moved in an upward direction 719. Along those lines, a lower surface 721 and an upper surface 712 of mold film 711 may be punctured with tips 126 of wire bond wires 110 for having at least a substantial portion, if not all, of tips 126 extend above lower surface 721 of mold film 711 into an interior region of mold film 711, namely having such substantial portion of such tips 126 located in mold film 711 between upper surface 712 and lower surface 721 of such mold film 711 prior to molding. Optionally, uppermost portions of arms 127 may likewise extend into mold film 711 prior to molding. In this example, lower surface 721 is generally co-planar with ledges 401; however, ledges 401 may be above, equal with, and/or below lower surface 721 in this or other implementations.


At operation 904, a molding material may be injected between upper surface 112 of substrate 150 and lower surface 721 of mold film 711 for molding layer 103. At operation 905, such molding material may be cured to form molding layer 103, and mold film 711 may be used to assist release of substrate 150 from such molding layer 103 and then such mold film 711 may be removed from mold press 700.


After formation of molding layer 103 and removal of mold film 711 from substrate 150 at operation 905, upper surface 132 of molding layer 103 and ledges 401 may optionally be co-planar, as in this example. However, as previously indicated, such ledges 401 may be above or below upper surface 132. At 906, substrate 150 may be moved by having lower platen 701 moved in an upward direction 719 to cause tips 126 to be pressed into lower surface 706 of upper platen 702 to bend such tips 126 toward upper surface 132, as generally indicated by arrow 723 in FIG. 8-3.


At operation 906, tips 126 may be pressed down against an upper surface 132 of molding layer 103, and such tips 126 may thus be bent over. After bending, tips 126 may optionally be against upper surface 132 of molding layer 103, which optionally may leave no readily perceivable gap between bottom surfaces of such tips 126 and upper surface 132 of molding layer 103. Again, tips 126 may be shaped prior to loading into mold press 700, and such shaped tips 126 may be to provide bending locations.


Pressing of such tips 126 may optionally flatten such tips between upper surface 132 of molding layer 103 and lower surface 706 of upper platen 702. Again, though lower platen 701 may be raised for this pressing, either or both platens may be moved for pressing, as described elsewhere herein, to provide bent over tips 126. Such pressing may further flatten tips, which may spread out such tips 126. After such pressing operation at 906, substrate 150 may be removed from mold press 700. By pressing after molding, arms 127 may have some protection from compressive stresses by molding layer 103.


As previously described an uppermost portion of an arm 127 may be embedded in mold film 711. Along those lines, FIG. 9 is a block diagram of a side cutaway view depicting another exemplary substrate 150 after a manufacturing process having operations for forming a microelectronic device as described above but with an uppermost portion 911 of an arm 127 of wire bond wires 110 embedded in mold film 711. Such uppermost portions 911 of arms 127 of wire bond wires 110 may be adjacent and integral with lowermost portions of such tips 126. Along those lines, a pressing after molding may be used to bend tips 126 over to have an uppermost portion of such tips bent down to be at least proximate to or touching upper surface 132. Such bent over tips 126 may define an underside through region or air gap 913, such as for a hook-like structure or shape for example. Optionally, a solder ball 914 may be placed over tips 126, and such bent over tips 126 may be used to anchor such solder balls 914, namely solder anchors which may include completely or partially filing such air gaps 913 with solder to assist in anchoring.


As previously described an uppermost portion of an arm 127 may be embedded in mold film 711. Along those lines, FIGS. 10-1 and 10-2 are block diagrams of a side cutaway view depicting yet another exemplary substrate 150 after another manufacturing process having operations for forming a microelectronic device as described above but with an upper portion 912, longer than an uppermost portion 911, of an arm 127 of wire bond wires 110 embedded in mold film 711. Such upper portions 912 of arms 127 of wire bond wires 110 may include such uppermost portions 911 and thus may be adjacent and integral with lowermost portions of such tips 126. Along those lines, a pressing after molding may be used to bend tips 126 over to have an uppermost portion of such tips bent down to be at least proximate to or touching upper surface 132. Such bent over tips 126 may define an underside through region 913, such as for a hook-like structure or shape for example. Optionally, a solder ball 914 may be placed over tips 126, and such bent over tips 126 may be used to anchor such solder balls 914, including completely or partially filing such air gaps 913 to assist in anchoring.


While the foregoing describes exemplary embodiment(s) in accordance with one or more aspects of the invention, other and further embodiment(s) in accordance with the one or more aspects of the invention may be devised without departing from the scope thereof, which is determined by the claim(s) that follow and equivalents thereof. Claim(s) listing steps do not imply any order of the steps. Trademarks are the property of their respective owners.

Claims
  • 1. A method for forming a microelectronic device, comprising: loading a substrate for the microelectronic device into a mold press;the substrate having a first surface and a second surface;the second surface being placed on an interior lower surface of the mold press;the substrate having a plurality of wire bond wires extending from the first surface toward an interior upper surface of the mold press;indexing an upper surface of a mold film to the interior upper surface of the mold press;puncturing a lower surface of the mold film with tips of the plurality of wire bond wires for having the tips of the plurality of wire bond wires located in the mold film between the upper surface and the lower surface;injecting a molding material between the first surface of the substrate and the lower surface of the mold film;curing the molding material to provide a molding layer;removing the mold film from the substrate; andpressing the tips of the plurality of wire bond wires down toward an upper surface of the molding layer to bend the tips over.
  • 2. The method according to claim 1, wherein the puncturing further comprises embedding portions of arms of the wire bond wires adjacent to the tips in the mold film.
  • 3. The method according to claim 1, wherein the pressing on the tips includes bending the tips over to provide bent over tips.
  • 4. The method according to claim 3, wherein the bent over tips have trapezoidal front facing outlines prior to the pressing.
  • 5. The method according to claim 3, wherein the bent over tips provide solder anchors after the pressing.
CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a divisional of and hereby claims priority to U.S. patent application Ser. No. 14/639,789, filed Mar. 5, 2015, the entirety of which is hereby incorporated by reference herein for all purposes.

US Referenced Citations (803)
Number Name Date Kind
2230663 Alden Feb 1941 A
3289452 Koellner Dec 1966 A
3358897 Christensen Dec 1967 A
3430835 Grable et al. Mar 1969 A
3623649 Keisling Nov 1971 A
3795037 Luttmer Mar 1974 A
3900153 Beerwerth et al. Aug 1975 A
4067104 Tracy Jan 1978 A
4072816 Gedney et al. Feb 1978 A
4213556 Persson et al. Jul 1980 A
4327860 Kirshenboin et al. May 1982 A
4422568 Elles et al. Dec 1983 A
4437604 Razon et al. Mar 1984 A
4604644 Beckham et al. Aug 1986 A
4642889 Grabbe Feb 1987 A
4667267 Hernandez et al. May 1987 A
4695870 Patraw Sep 1987 A
4716049 Patraw Dec 1987 A
4725692 Ishii et al. Feb 1988 A
4771930 Gillotti et al. Sep 1988 A
4793814 Zifcak Dec 1988 A
4804132 DiFrancesco Feb 1989 A
4845354 Gupta et al. Jul 1989 A
4867267 Carlson Sep 1989 A
4902600 Tamagawa et al. Feb 1990 A
4924353 Patraw May 1990 A
4925083 Farassat et al. May 1990 A
4955523 Carlommagno et al. Sep 1990 A
4975079 Beaman et al. Dec 1990 A
4982265 Watanabe et al. Jan 1991 A
4998885 Beaman et al. Mar 1991 A
4999472 Neinast et al. Mar 1991 A
5067007 Otsuka et al. Nov 1991 A
5067382 Zimmerman et al. Nov 1991 A
5083697 DiFrancesco Jan 1992 A
5095187 Gliga Mar 1992 A
5133495 Angulas et al. Jul 1992 A
5138438 Masayuki et al. Aug 1992 A
5148265 Khandros et al. Sep 1992 A
5148266 Khandros et al. Sep 1992 A
5186381 Kim Feb 1993 A
5189505 Bartelink Feb 1993 A
5196726 Nishiguchi et al. Mar 1993 A
5203075 Angulas et al. Apr 1993 A
5214308 Nishiguchi et al. May 1993 A
5220489 Barreto et al. Jun 1993 A
5222014 Lin Jun 1993 A
5238173 Ura et al. Aug 1993 A
5241454 Ameen et al. Aug 1993 A
5241456 Marcinkiewicz et al. Aug 1993 A
5316788 Dibble et al. May 1994 A
5340771 Rostoker Aug 1994 A
5346118 Degani et al. Sep 1994 A
5371654 Beaman et al. Dec 1994 A
5397997 Tuckerman et al. Mar 1995 A
5438224 Papageorge et al. Aug 1995 A
5455390 DiStefano Oct 1995 A
5468995 Higgins, III Nov 1995 A
5476211 Khandros Dec 1995 A
5494667 Uchida et al. Feb 1996 A
5495667 Farnworth et al. Mar 1996 A
5518964 DiStefano et al. May 1996 A
5525545 Grube Jun 1996 A
5531022 Beaman et al. Jul 1996 A
5536909 DiStefano et al. Jul 1996 A
5541567 Fogel et al. Jul 1996 A
5571428 Nishimura et al. Nov 1996 A
5578869 Hoffman et al. Nov 1996 A
5608265 Kitano et al. Mar 1997 A
5615824 Fjelstad et al. Apr 1997 A
5635846 Beaman et al. Jun 1997 A
5656550 Tsuji et al. Aug 1997 A
5659952 Kovac et al. Aug 1997 A
5679977 Khandros et al. Oct 1997 A
5688716 DiStefano et al. Nov 1997 A
5718361 Braun et al. Feb 1998 A
5726493 Yamashita et al. Mar 1998 A
5731709 Pastore et al. Mar 1998 A
5736780 Murayama Apr 1998 A
5736785 Chiang et al. Apr 1998 A
5766987 Mitchell et al. Jun 1998 A
5787581 DiStefano et al. Aug 1998 A
5801441 DiStefano et al. Sep 1998 A
5802699 Fjelstad et al. Sep 1998 A
5811982 Beaman et al. Sep 1998 A
5821763 Beaman et al. Oct 1998 A
5830389 Capote et al. Nov 1998 A
5831836 Long et al. Nov 1998 A
5839191 Economy et al. Nov 1998 A
5854507 Miremadi et al. Dec 1998 A
5874781 Fogal et al. Feb 1999 A
5898991 Fogel et al. May 1999 A
5908317 Heo Jun 1999 A
5912505 Itoh et al. Jun 1999 A
5948533 Gallagher et al. Sep 1999 A
5953624 Bando et al. Sep 1999 A
5971253 Gilleo et al. Oct 1999 A
5973391 Bischoff et al. Oct 1999 A
5977618 DiStefano et al. Nov 1999 A
5977640 Bertin et al. Nov 1999 A
5980270 Fjelstad et al. Nov 1999 A
5989936 Smith et al. Nov 1999 A
5994152 Khandros et al. Nov 1999 A
6000126 Pai Dec 1999 A
6002168 Bellaar et al. Dec 1999 A
6032359 Carroll Mar 2000 A
6038136 Weber Mar 2000 A
6052287 Palmer et al. Apr 2000 A
6054337 Solberg Apr 2000 A
6054756 DiStefano et al. Apr 2000 A
6077380 Hayes et al. Jun 2000 A
6117694 Smith et al. Sep 2000 A
6180881 Isaak Jan 2001 B1
6194250 Melton et al. Feb 2001 B1
6194291 DiStefano et al. Feb 2001 B1
6202297 Farad et al. Mar 2001 B1
6206273 Beaman et al. Mar 2001 B1
6208024 DiStefano Mar 2001 B1
6211572 Fjelstad et al. Apr 2001 B1
6211574 Tao et al. Apr 2001 B1
6215670 Khandros Apr 2001 B1
6218728 Kimura Apr 2001 B1
6225688 Kim et al. May 2001 B1
6238949 Nguyen et al. May 2001 B1
6258625 Brofman et al. Jul 2001 B1
6260264 Chen et al. Jul 2001 B1
6262482 Shiraishi et al. Jul 2001 B1
6268662 Test et al. Jul 2001 B1
6295729 Beaman et al. Oct 2001 B1
6300780 Beaman et al. Oct 2001 B1
6303997 Lee et al. Oct 2001 B1
6313528 Solberg Nov 2001 B1
6316838 Ozawa et al. Nov 2001 B1
6329224 Nguyen et al. Dec 2001 B1
6332270 Beaman Dec 2001 B2
6334247 Beaman et al. Jan 2002 B1
6358627 Benenati et al. Mar 2002 B2
6362520 DiStefano Mar 2002 B2
6362525 Rahim Mar 2002 B1
6376769 Chung Apr 2002 B1
6388333 Taniguchi et al. May 2002 B1
6395199 Krassowski et al. May 2002 B1
6399426 Capote et al. Jun 2002 B1
6407448 Chun Jun 2002 B2
6407456 Ball Jun 2002 B1
6410431 Bertin et al. Jun 2002 B2
6413850 Ooroku et al. Jul 2002 B1
6439450 Chapman et al. Aug 2002 B1
6458411 Goossen et al. Oct 2002 B1
6469260 Horiuchi et al. Oct 2002 B2
6469373 Funakara et al. Oct 2002 B2
6472743 Huang et al. Oct 2002 B2
6476503 Imamura et al. Nov 2002 B1
6476506 O'Connor Nov 2002 B1
6476583 McAndrews Nov 2002 B2
6486545 Glenn et al. Nov 2002 B1
6489182 Kwon Dec 2002 B2
6489676 Taniguchi et al. Dec 2002 B2
6495914 Sekine et al. Dec 2002 B1
6507104 Ho et al. Jan 2003 B2
6509639 Lin Jan 2003 B1
6514847 Ohsawa et al. Feb 2003 B1
6515355 Jiang et al. Feb 2003 B1
6522018 Tay et al. Feb 2003 B1
6526655 Beaman et al. Mar 2003 B2
6531784 Shim et al. Mar 2003 B1
6545228 Hashimoto Apr 2003 B2
6550666 Chew Apr 2003 B2
6555918 Masuda Apr 2003 B2
6560117 Moon May 2003 B2
6563205 Fogal et al. May 2003 B1
6563217 Corisis et al. May 2003 B2
6573458 Matsubara et al. Jun 2003 B1
6578754 Tung Jun 2003 B1
6581276 Chung Jun 2003 B2
6581283 Sugiura et al. Jun 2003 B2
6624653 Cram Sep 2003 B1
6630730 Grigg Oct 2003 B2
6639303 Siniaguine Oct 2003 B2
6647310 Yi et al. Nov 2003 B1
6650013 Yin et al. Nov 2003 B2
6653170 Lin Nov 2003 B1
6684007 Yoshimura et al. Jan 2004 B2
6686268 Farnworth Feb 2004 B2
6687988 Sugiura et al. Feb 2004 B1
6693363 Tay et al. Feb 2004 B2
6696305 Kung et al. Feb 2004 B2
6699730 Kim et al. Mar 2004 B2
6708403 Beaman et al. Mar 2004 B2
6720783 Satoh Apr 2004 B2
6730544 Yang May 2004 B1
6733711 Durocher et al. May 2004 B2
6734539 Degani et al. May 2004 B2
6734542 Nakatani et al. May 2004 B2
6740980 Hirose May 2004 B2
6740981 Hosomi May 2004 B2
6741085 Khandros et al. May 2004 B1
6746894 Fee et al. Jun 2004 B2
6754407 Chakravorty et al. Jun 2004 B2
6756252 Nakanishi Jun 2004 B2
6756663 Shiraishi et al. Jun 2004 B2
6759738 Fallon et al. Jul 2004 B1
6762078 Shin et al. Jul 2004 B2
6765287 Lin Jul 2004 B1
6774317 Fjelstad Aug 2004 B2
6774467 Horiuchi et al. Aug 2004 B2
6774473 Shen Aug 2004 B1
6774494 Arakawa Aug 2004 B2
6777787 Shibata Aug 2004 B2
6777797 Egawa Aug 2004 B2
6778406 Eldridge et al. Aug 2004 B2
6780746 Kinsman et al. Aug 2004 B2
6787926 Chen et al. Sep 2004 B2
6790757 Chittipeddi et al. Sep 2004 B1
6800941 Lee et al. Oct 2004 B2
6812575 Furusawa Nov 2004 B2
6815257 Yoon et al. Nov 2004 B2
6825552 Light et al. Nov 2004 B2
6828665 Pu et al. Dec 2004 B2
6828668 Smith et al. Dec 2004 B2
6844619 Tago Jan 2005 B2
6856235 Fjelstad Feb 2005 B2
6864166 Yin et al. Mar 2005 B1
6867499 Tabrizi Mar 2005 B1
6874910 Sugimoto et al. Apr 2005 B2
6897565 Pflughaupt et al. May 2005 B2
6900530 Tsai May 2005 B1
6902869 Appelt et al. Jun 2005 B2
6902950 Ma et al. Jun 2005 B2
6906408 Cloud et al. Jun 2005 B2
6908785 Kim Jun 2005 B2
6909181 Aiba et al. Jun 2005 B2
6917098 Yamunan Jul 2005 B1
6930256 Huemoeller et al. Aug 2005 B1
6933598 Kamezos Aug 2005 B2
6933608 Fujisawa Aug 2005 B2
6939723 Corisis et al. Sep 2005 B2
6946380 Takahashi Sep 2005 B2
6951773 Ho et al. Oct 2005 B2
6962282 Manansala Nov 2005 B2
6962864 Jeng et al. Nov 2005 B1
6977440 Pflughaupt et al. Dec 2005 B2
6979599 Silverbrook Dec 2005 B2
6987032 Fan Jan 2006 B1
6989122 Pham et al. Jan 2006 B1
7009297 Chiang et al. Mar 2006 B1
7017794 Nosaka Mar 2006 B2
7021521 Sakurai et al. Apr 2006 B2
7045884 Standing May 2006 B2
7051915 Mutaguchi May 2006 B2
7052935 Pai et al. May 2006 B2
7053477 Kamezos et al. May 2006 B2
7053485 Bang et al. May 2006 B2
7061079 Weng et al. Jun 2006 B2
7061097 Yokoi Jun 2006 B2
7067911 Lin et al. Jun 2006 B1
7071028 Koike et al. Jul 2006 B2
7071547 Kang et al. Jul 2006 B2
7071573 Lin Jul 2006 B1
7078788 Vu et al. Jul 2006 B2
7078822 Dias et al. Jul 2006 B2
7095105 Cherukuri et al. Aug 2006 B2
7112520 Lee et al. Sep 2006 B2
7115986 Moon et al. Oct 2006 B2
7119427 Kim Oct 2006 B2
7121891 Cherian Oct 2006 B2
7138722 Miyamoto et al. Nov 2006 B2
7170185 Hogerton et al. Jan 2007 B1
7176043 Haba et al. Feb 2007 B2
7176506 Beroz et al. Feb 2007 B2
7176559 Ho et al. Feb 2007 B2
7185426 Hiner et al. Mar 2007 B1
7187072 Fukitomi et al. Mar 2007 B2
7190061 Lee Mar 2007 B2
7198980 Jiang et al. Apr 2007 B2
7198987 Warren et al. Apr 2007 B1
7205670 Oyama Apr 2007 B2
7215033 Lee et al. May 2007 B2
7216794 Lange et al. May 2007 B2
7225538 Eldridge et al. Jun 2007 B2
7227095 Roberts et al. Jun 2007 B2
7229906 Babinetz et al. Jun 2007 B2
7233057 Hussa Jun 2007 B2
7242081 Lee Jul 2007 B1
7246431 Bang et al. Jul 2007 B2
7256069 Akram et al. Aug 2007 B2
7259445 Lau et al. Aug 2007 B2
7262124 Fujisawa Aug 2007 B2
7262506 Mess et al. Aug 2007 B2
7268421 Lin Sep 2007 B1
7276785 Bauer et al. Oct 2007 B2
7276799 Lee et al. Oct 2007 B2
7287322 Mathieu Oct 2007 B2
7290448 Shirasaka et al. Nov 2007 B2
7294920 Chen et al. Nov 2007 B2
7294928 Bang et al. Nov 2007 B2
7298033 Yoo Nov 2007 B2
7301770 Campbell et al. Nov 2007 B2
7307348 Wood et al. Dec 2007 B2
7321164 Hsu Jan 2008 B2
7323767 James et al. Jan 2008 B2
7327038 Kwon et al. Feb 2008 B2
7342803 Inagaki et al. Mar 2008 B2
7344917 Gautham Mar 2008 B2
7345361 Malik et al. Mar 2008 B2
7355289 Hess et al. Apr 2008 B2
7365416 Kawabata et al. Apr 2008 B2
7368924 Beaman et al. May 2008 B2
7371676 Hembree May 2008 B2
7372151 Fan et al. May 2008 B1
7378726 Punzalan et al. May 2008 B2
7390700 Gerber et al. Jun 2008 B2
7391105 Yeom Jun 2008 B2
7391121 Otremba Jun 2008 B2
7416107 Chapman et al. Aug 2008 B2
7425758 Corisis et al. Sep 2008 B2
7453157 Haba et al. Nov 2008 B2
7456091 Kuraya et al. Nov 2008 B2
7456495 Pohl et al. Nov 2008 B2
7462936 Haba et al. Dec 2008 B2
7476608 Craig et al. Jan 2009 B2
7476962 Kim Jan 2009 B2
7485562 Chua et al. Feb 2009 B2
7485969 Corisis et al. Feb 2009 B2
7495179 Kubota et al. Feb 2009 B2
7495342 Beaman et al. Feb 2009 B2
7495644 Hirakata Feb 2009 B2
7504284 Ye et al. Mar 2009 B2
7504716 Abbott Mar 2009 B2
7517733 Camacho et al. Apr 2009 B2
7527505 Murata May 2009 B2
7528474 Lee May 2009 B2
7535090 Furuyama et al. May 2009 B2
7537962 Jang et al. May 2009 B2
7538565 Beaman et al. May 2009 B1
7550836 Chou et al. Jun 2009 B2
7560360 Cheng et al. Jul 2009 B2
7564116 Ahn et al. Jul 2009 B2
7576415 Cha et al. Aug 2009 B2
7576439 Craig et al. Aug 2009 B2
7578422 Lange et al. Aug 2009 B2
7582963 Gerber et al. Sep 2009 B2
7589394 Kawano Sep 2009 B2
7592638 Kim Sep 2009 B2
7595548 Shirasaka et al. Sep 2009 B2
7605479 Mohammed Oct 2009 B2
7612638 Chung et al. Nov 2009 B2
7621436 Mii et al. Nov 2009 B2
7625781 Beer Dec 2009 B2
7629695 Yoshimura et al. Dec 2009 B2
7633154 Dai et al. Dec 2009 B2
7633765 Scanlan et al. Dec 2009 B1
7642133 Wu et al. Jan 2010 B2
7646102 Boon Jan 2010 B2
7659612 Hembree et al. Feb 2010 B2
7659617 Kang et al. Feb 2010 B2
7663226 Cho et al. Feb 2010 B2
7670940 Mizukoshi et al. Mar 2010 B2
7671457 Hiner et al. Mar 2010 B1
7671459 Corisis et al. Mar 2010 B2
7675152 Gerber et al. Mar 2010 B2
7677429 Chapman et al. Mar 2010 B2
7682960 Wen Mar 2010 B2
7682962 Hembree Mar 2010 B2
7683460 Heitzer et al. Mar 2010 B2
7683482 Nishida et al. Mar 2010 B2
7692931 Chong et al. Apr 2010 B2
7696631 Beaulieu et al. Apr 2010 B2
7706144 Lynch Apr 2010 B2
7709968 Damberg et al. May 2010 B2
7719122 Tsao et al. May 2010 B2
7723839 Yano et al. May 2010 B2
7728443 Hembree Jun 2010 B2
7737545 Fjelstad et al. Jun 2010 B2
7750483 Lin et al. Jul 2010 B1
7757385 Hembree Jul 2010 B2
7759782 Haba et al. Jul 2010 B2
7777238 Nishida et al. Aug 2010 B2
7777328 Enomoto Aug 2010 B2
7777351 Berry et al. Aug 2010 B1
7780064 Wong et al. Aug 2010 B2
7781877 Jiang et al. Aug 2010 B2
7795717 Goller Sep 2010 B2
7800233 Kawano et al. Sep 2010 B2
7807512 Lee et al. Oct 2010 B2
7808093 Kagaya et al. Oct 2010 B2
7808439 Yang et al. Oct 2010 B2
7815323 Saeki Oct 2010 B2
7834464 Meyer et al. Nov 2010 B2
7838334 Yu et al. Nov 2010 B2
7842541 Rusli et al. Nov 2010 B1
7850087 Hwang et al. Dec 2010 B2
7851259 Kim Dec 2010 B2
7855462 Boon et al. Dec 2010 B2
7855464 Shikano Dec 2010 B2
7857190 Takahashi et al. Dec 2010 B2
7859033 Brady Dec 2010 B2
7872335 Khan et al. Jan 2011 B2
7876180 Uchimura Jan 2011 B2
7892889 Howard et al. Feb 2011 B2
7898083 Castro Mar 2011 B2
7901989 Haba et al. Mar 2011 B2
7902644 Huang et al. Mar 2011 B2
7902652 Seo et al. Mar 2011 B2
7910385 Kweon et al. Mar 2011 B2
7911805 Haba Mar 2011 B2
7919846 Hembree Apr 2011 B2
7919871 Moon et al. Apr 2011 B2
7923295 Shim et al. Apr 2011 B2
7923304 Choi et al. Apr 2011 B2
7928552 Cho et al. Apr 2011 B1
7932170 Huemoeller et al. Apr 2011 B1
7934313 Lin et al. May 2011 B1
7939934 Haba et al. May 2011 B2
7944034 Gerber et al. May 2011 B2
7956456 Gurrum et al. Jun 2011 B2
7960843 Fiedler et al. Jun 2011 B2
7964956 Bet-Shliemoun Jun 2011 B1
7967062 Campbell et al. Jun 2011 B2
7974099 Grajcar Jul 2011 B2
7977597 Roberts et al. Jul 2011 B2
7990711 Andry et al. Aug 2011 B1
7994622 Mohammed et al. Aug 2011 B2
8004074 Mori et al. Aug 2011 B2
8004093 Oh et al. Aug 2011 B2
8008121 Choi et al. Aug 2011 B2
8012797 Shen et al. Sep 2011 B2
8017437 Yoo et al. Sep 2011 B2
8017452 Ishihara et al. Sep 2011 B2
8018033 Moriya Sep 2011 B2
8018065 Lam Sep 2011 B2
8020290 Sheats Sep 2011 B2
8021907 Pagaila et al. Sep 2011 B2
8035213 Lee et al. Oct 2011 B2
8039316 Chi et al. Oct 2011 B2
8039960 Lin Oct 2011 B2
8039970 Yamamori et al. Oct 2011 B2
8048479 Hedler et al. Nov 2011 B2
8053814 Chen et al. Nov 2011 B2
8053879 Lee et al. Nov 2011 B2
8053906 Chang et al. Nov 2011 B2
8058101 Haba et al. Nov 2011 B2
8063475 Choi et al. Nov 2011 B2
7880290 Park Dec 2011 B2
8071424 Kang et al. Dec 2011 B2
8071431 Hoang et al. Dec 2011 B2
8071470 Khor et al. Dec 2011 B2
8076765 Chen et al. Dec 2011 B2
8076770 Kagaya et al. Dec 2011 B2
8080445 Pagaila Dec 2011 B1
8084867 Tang et al. Dec 2011 B2
8092734 Jiang et al. Jan 2012 B2
8093697 Haba et al. Jan 2012 B2
8106498 Shin et al. Jan 2012 B2
8115283 Bolognia et al. Feb 2012 B1
8119516 Endo Feb 2012 B2
8120054 Seo et al. Feb 2012 B2
8120186 Yoon Feb 2012 B2
8138584 Wang et al. Mar 2012 B2
8143141 Sun et al. Mar 2012 B2
8143710 Cho Mar 2012 B2
8158888 Shen et al. Apr 2012 B2
8169065 Kohl et al. May 2012 B2
8174119 Pendse May 2012 B2
8183682 Groenhuis et al. May 2012 B2
8183684 Nakazato May 2012 B2
8193034 Pagaila et al. Jun 2012 B2
8194411 Leung et al. Jun 2012 B2
8198716 Periaman et al. Jun 2012 B2
8207604 Raba et al. Jun 2012 B2
8213184 Knickerbocker Jul 2012 B2
8217502 Ko Jul 2012 B2
8225982 Pirkle et al. Jul 2012 B2
8232141 Choi et al. Jul 2012 B2
8237257 Yang Aug 2012 B2
8258010 Pagaila et al. Sep 2012 B2
8258015 Chow et al. Sep 2012 B2
8263435 Choi et al. Sep 2012 B2
8264091 Cho et al. Sep 2012 B2
8269335 Osumi Sep 2012 B2
8278746 Ding et al. Oct 2012 B2
8288854 Weng et al. Oct 2012 B2
8293580 Kim et al. Oct 2012 B2
8299368 Endo Oct 2012 B2
8304900 Jang et al. Nov 2012 B2
8314492 Egawa Nov 2012 B2
8315060 Morikita et al. Nov 2012 B2
8318539 Cho et al. Nov 2012 B2
8319338 Berry et al. Nov 2012 B1
8324633 McKenzie et al. Dec 2012 B2
8330272 Haba Dec 2012 B2
8349735 Pagaila et al. Jan 2013 B2
8354297 Pagaila et al. Jan 2013 B2
8362620 Pagani Jan 2013 B2
8372741 Co et al. Feb 2013 B1
8390108 Cho et al. Mar 2013 B2
8390117 Shimizu et al. Mar 2013 B2
8395259 Eun Mar 2013 B2
8399972 Hoang et al. Mar 2013 B2
8404520 Chau Mar 2013 B1
8409922 Camacho et al. Apr 2013 B2
8415704 Ivanov et al. Apr 2013 B2
8419442 Horikawa et al. Apr 2013 B2
8435899 Miyata et al. May 2013 B2
8450839 Corisis et al. May 2013 B2
8476115 Choi et al. Jul 2013 B2
8476770 Shao et al. Jul 2013 B2
8482111 Haba Jul 2013 B2
8487421 Sato et al. Jul 2013 B2
8492201 Pagaila et al. Jul 2013 B2
8502387 Choi et al. Aug 2013 B2
8507297 Iida et al. Aug 2013 B2
8508045 Khan et al. Aug 2013 B2
8518746 Pagaila et al. Aug 2013 B2
8520396 Schmidt et al. Aug 2013 B2
8525214 Lin et al. Sep 2013 B2
8525314 Haba et al. Sep 2013 B2
8525318 Kim et al. Sep 2013 B1
8552556 Kim et al. Oct 2013 B1
8558379 Kwon Oct 2013 B2
8558392 Chua et al. Oct 2013 B2
8564141 Lee et al. Oct 2013 B2
8567051 Val Oct 2013 B2
8569892 Mori et al. Oct 2013 B2
8580607 Haba Nov 2013 B2
8598717 Masuda Dec 2013 B2
8618646 Sasaki et al. Dec 2013 B2
8618659 Sato et al. Dec 2013 B2
8624374 Ding et al. Jan 2014 B2
8633059 Do et al. Jan 2014 B2
8637991 Haba Jan 2014 B2
8642393 Yu et al. Feb 2014 B1
8646508 Kawada Feb 2014 B2
8653626 Lo et al. Feb 2014 B2
8653668 Uno et al. Feb 2014 B2
8653676 Kim et al. Feb 2014 B2
8659164 Haba Feb 2014 B2
8664780 Han et al. Mar 2014 B2
8669646 Tabatabai et al. Mar 2014 B2
8670261 Crisp et al. Mar 2014 B2
8680662 Haba et al. Mar 2014 B2
8680677 Wyland Mar 2014 B2
8680684 Haba et al. Mar 2014 B2
8685792 Chow et al. Apr 2014 B2
8686570 Semmelmeyer et al. Apr 2014 B2
8697492 Haba et al. Apr 2014 B2
8723307 Jiang et al. May 2014 B2
8728865 Haba et al. May 2014 B2
8729714 Meyer May 2014 B1
8742576 Thacker et al. Jun 2014 B2
8742597 Nickerson Jun 2014 B2
8766436 Delucca et al. Jul 2014 B2
8772152 Co et al. Jul 2014 B2
8772817 Yao Jul 2014 B2
8785245 Kim Jul 2014 B2
8791575 Oganesian et al. Jul 2014 B2
8791580 Park et al. Jul 2014 B2
8796135 Oganesian et al. Aug 2014 B2
8796846 Lin et al. Aug 2014 B2
8802494 Lee et al. Aug 2014 B2
8810031 Chang et al. Aug 2014 B2
8811055 Yoon Aug 2014 B2
8816404 Kim et al. Aug 2014 B2
8816505 Mohammed et al. Aug 2014 B2
8835228 Mohammed Sep 2014 B2
8836136 Chau et al. Sep 2014 B2
8836140 Ma et al. Sep 2014 B2
8836147 Uno et al. Sep 2014 B2
8841765 Haba et al. Sep 2014 B2
8846521 Sugizaki Sep 2014 B2
8847376 Oganesian et al. Sep 2014 B2
8853558 Gupta et al. Oct 2014 B2
8878353 Haba Nov 2014 B2
8884416 Lee et al. Nov 2014 B2
8893380 Kim et al. Nov 2014 B2
8907466 Haba Dec 2014 B2
8907500 Haba et al. Dec 2014 B2
8912651 Yu et al. Dec 2014 B2
8916781 Haba et al. Dec 2014 B2
8922005 Hu et al. Dec 2014 B2
8923004 Low et al. Dec 2014 B2
8927337 Haba et al. Jan 2015 B2
8937309 England et al. Jan 2015 B2
8940630 Damberg et al. Jan 2015 B2
8940636 Pagaila et al. Jan 2015 B2
8946757 Mohammed et al. Feb 2015 B2
8948712 Chen et al. Feb 2015 B2
8963339 He et al. Feb 2015 B2
8970049 Kamezos Mar 2015 B2
8975726 Chen Mar 2015 B2
8978247 Yang et al. Mar 2015 B2
8981559 Hsu et al. Mar 2015 B2
8987132 Gruber et al. Mar 2015 B2
8988895 Mohammed et al. Mar 2015 B2
8993376 Camacho et al. Mar 2015 B2
9006031 Camacho et al. Apr 2015 B2
9012263 Mathew et al. Apr 2015 B1
9041227 Chau et al. May 2015 B2
9054095 Pagaila Jun 2015 B2
9082763 Yu et al. Jul 2015 B2
9093435 Sato et al. Jul 2015 B2
9095074 Haba et al. Jul 2015 B2
9105483 Chau et al. Aug 2015 B2
9105552 Yu et al. Aug 2015 B2
9117811 Zohni Aug 2015 B2
9123664 Haba Sep 2015 B2
9128123 Liu et al. Sep 2015 B2
9136254 Zhao et al. Sep 2015 B2
9142586 Wang et al. Sep 2015 B2
9153562 Haba et al. Oct 2015 B2
9167710 Mohammed et al. Oct 2015 B2
9171790 Yu et al. Oct 2015 B2
9177832 Camacho Nov 2015 B2
9196586 Chen et al. Nov 2015 B2
9196588 Leal Nov 2015 B2
9209081 Lim et al. Dec 2015 B2
9214434 Kim et al. Dec 2015 B1
9224647 Koo et al. Dec 2015 B2
9224717 Sato et al. Dec 2015 B2
9258922 Chen et al. Feb 2016 B2
9263394 Uzoh et al. Feb 2016 B2
9263413 Mohammed Feb 2016 B2
9299670 Yap et al. Mar 2016 B2
9318449 Hasch et al. Apr 2016 B2
9318452 Chen et al. Apr 2016 B2
9324696 Choi et al. Apr 2016 B2
9330945 Song et al. May 2016 B2
9349706 Co et al. May 2016 B2
9362161 Chi et al. Jun 2016 B2
9378982 Lin et al. Jun 2016 B2
9379074 Uzoh et al. Jun 2016 B2
9379078 Yu et al. Jun 2016 B2
9401338 Magnus et al. Jul 2016 B2
9405064 Herbsommer et al. Aug 2016 B2
9412661 Lu et al. Aug 2016 B2
9418940 Hoshino et al. Aug 2016 B2
9418971 Chen et al. Aug 2016 B2
9437459 Carpenter et al. Sep 2016 B2
9443797 Marimuthu et al. Sep 2016 B2
9449941 Tsai et al. Sep 2016 B2
9461025 Yu et al. Oct 2016 B2
9496152 Cho et al. Nov 2016 B2
9502390 Caskey et al. Nov 2016 B2
9508622 Higgins Nov 2016 B2
9559088 Gonzalez et al. Jan 2017 B2
9570382 Haba Feb 2017 B2
9583456 Uzoh et al. Feb 2017 B2
9601454 Zhao Mar 2017 B2
9653442 Yu et al. May 2017 B2
9659877 Bakalski et al. May 2017 B2
9663353 Ofner et al. May 2017 B2
9685365 Mohammed Jun 2017 B2
9735084 Katkar et al. Aug 2017 B2
9761558 Chau Sep 2017 B2
9788466 Chen Oct 2017 B2
20010042925 Yamamoto et al. Nov 2001 A1
20020014004 Beaman et al. Feb 2002 A1
20020125556 Oh et al. Sep 2002 A1
20020171152 Miyazaki Nov 2002 A1
20030006494 Lee et al. Jan 2003 A1
20030048108 Beaman et al. Mar 2003 A1
20030057544 Nathan et al. Mar 2003 A1
20030094666 Clayton et al. May 2003 A1
20030162378 Mikami Aug 2003 A1
20040041757 Yang et al. Mar 2004 A1
20040262728 Sterrett et al. Dec 2004 A1
20050017369 Clayton et al. Jan 2005 A1
20050062492 Beaman et al. Mar 2005 A1
20050082664 Funaba et al. Apr 2005 A1
20050095835 Humpston et al. May 2005 A1
20050161814 Mizukoshi et al. Jul 2005 A1
20050173805 Damberg Aug 2005 A1
20050173807 Zhu et al. Aug 2005 A1
20050176233 Joshi et al. Aug 2005 A1
20060053909 Shirasaka Mar 2006 A1
20060087006 Shirasaka Apr 2006 A1
20060087013 Hsieh Apr 2006 A1
20060216868 Yang et al. Sep 2006 A1
20060255449 Lee et al. Nov 2006 A1
20070010086 Hsieh Jan 2007 A1
20070080360 Mirsky et al. Apr 2007 A1
20070164457 Yamaguchi et al. Jul 2007 A1
20070190747 Hup Aug 2007 A1
20070254406 Lee Nov 2007 A1
20070271781 Beaman et al. Nov 2007 A9
20070290325 Wu et al. Dec 2007 A1
20080006942 Park et al. Jan 2008 A1
20080017968 Choi et al. Jan 2008 A1
20080023805 Howard et al. Jan 2008 A1
20080042265 Merilo et al. Feb 2008 A1
20080047741 Beaman et al. Feb 2008 A1
20080048690 Beaman et al. Feb 2008 A1
20080048691 Beaman et al. Feb 2008 A1
20080048697 Beaman et al. Feb 2008 A1
20080054434 Kim Mar 2008 A1
20080073769 Wu et al. Mar 2008 A1
20080100316 Beaman et al. May 2008 A1
20080100317 Beaman et al. May 2008 A1
20080100318 Beaman et al. May 2008 A1
20080100324 Beaman et al. May 2008 A1
20080105984 Lee et al. May 2008 A1
20080106281 Beaman et al. May 2008 A1
20080106282 Beaman et al. May 2008 A1
20080106283 Beaman et al. May 2008 A1
20080106284 Beaman et al. May 2008 A1
20080106285 Beaman et al. May 2008 A1
20080106291 Beaman et al. May 2008 A1
20080106872 Beaman et al. May 2008 A1
20080111568 Beaman et al. May 2008 A1
20080111569 Beaman et al. May 2008 A1
20080111570 Beaman et al. May 2008 A1
20080112144 Beaman et al. May 2008 A1
20080112145 Beaman et al. May 2008 A1
20080112146 Beaman et al. May 2008 A1
20080112147 Beaman et al. May 2008 A1
20080112148 Beaman et al. May 2008 A1
20080112149 Beaman et al. May 2008 A1
20080116912 Beaman et al. May 2008 A1
20080116913 Beaman et al. May 2008 A1
20080116914 Beaman et al. May 2008 A1
20080116915 Beaman et al. May 2008 A1
20080116916 Beaman et al. May 2008 A1
20080117611 Beaman et al. May 2008 A1
20080117612 Beaman et al. May 2008 A1
20080117613 Beaman et al. May 2008 A1
20080121879 Beaman et al. May 2008 A1
20080123310 Beaman et al. May 2008 A1
20080129319 Beaman et al. Jun 2008 A1
20080129320 Beaman et al. Jun 2008 A1
20080132094 Beaman et al. Jun 2008 A1
20080156518 Honer et al. Jun 2008 A1
20080164595 Wu et al. Jul 2008 A1
20080169548 Baek Jul 2008 A1
20080217708 Reisner et al. Sep 2008 A1
20080246126 Bowles et al. Oct 2008 A1
20080280393 Lee et al. Nov 2008 A1
20080284045 Gerber et al. Nov 2008 A1
20080303153 Oi Dec 2008 A1
20080308305 Kawabe Dec 2008 A1
20090008796 Eng et al. Jan 2009 A1
20090014876 Youn et al. Jan 2009 A1
20090032913 Haba Feb 2009 A1
20090085185 Byun et al. Apr 2009 A1
20090091009 Corisis et al. Apr 2009 A1
20090102063 Lee et al. Apr 2009 A1
20090127686 Yang et al. May 2009 A1
20090128176 Beaman et al. May 2009 A1
20090140415 Furuta Jun 2009 A1
20090166664 Park et al. Jul 2009 A1
20090166873 Yang et al. Jul 2009 A1
20090189288 Beaman Jul 2009 A1
20090194829 Chung et al. Aug 2009 A1
20090256229 Ishikawa et al. Oct 2009 A1
20090315192 Usami Dec 2009 A1
20090315579 Beaman et al. Dec 2009 A1
20100032822 Liao et al. Feb 2010 A1
20100044860 Haba et al. Feb 2010 A1
20100078795 Dekker et al. Apr 2010 A1
20100193937 Nagamatsu et al. Aug 2010 A1
20100200981 Huang et al. Aug 2010 A1
20100258955 Miyagawa et al. Oct 2010 A1
20100289142 Shim et al. Nov 2010 A1
20100314748 Hsu et al. Dec 2010 A1
20100327419 Muthukumar et al. Dec 2010 A1
20110042699 Park et al. Feb 2011 A1
20110068478 Pagaila et al. Mar 2011 A1
20110157834 Wang Jun 2011 A1
20110183464 Takahashi Jul 2011 A1
20110209908 Lin et al. Sep 2011 A1
20110215472 Chandrasekaran Sep 2011 A1
20120001336 Zeng et al. Jan 2012 A1
20120043655 Khor et al. Feb 2012 A1
20120063090 Hsiao et al. Mar 2012 A1
20120080787 Shah et al. Apr 2012 A1
20120086111 Iwamoto et al. Apr 2012 A1
20120126431 Kim et al. May 2012 A1
20120153444 Haga et al. Jun 2012 A1
20120184116 Pawlikowski et al. Jul 2012 A1
20130001797 Choi et al. Jan 2013 A1
20130040423 Tung Feb 2013 A1
20130049218 Gong et al. Feb 2013 A1
20130087915 Warren et al. Apr 2013 A1
20130153646 Ho Jun 2013 A1
20130200524 Han et al. Aug 2013 A1
20130234317 Chen et al. Sep 2013 A1
20130256847 Park et al. Oct 2013 A1
20130323409 Read et al. Dec 2013 A1
20140035892 Shenoy et al. Feb 2014 A1
20140103527 Marimuthu et al. Apr 2014 A1
20140124949 Paek et al. May 2014 A1
20140175657 Oka et al. Jun 2014 A1
20140225248 Henderson et al. Aug 2014 A1
20140239479 Start Aug 2014 A1
20140239490 Wang Aug 2014 A1
20140312503 Seo Oct 2014 A1
20150076714 Haba et al. Mar 2015 A1
20150130054 Lee et al. May 2015 A1
20150340305 Lo Nov 2015 A1
20150380376 Mathew et al. Dec 2015 A1
20160043813 Chen et al. Feb 2016 A1
20160225692 Kim et al. Aug 2016 A1
20170117231 Awujoola et al. Apr 2017 A1
20170229432 Lin et al. Oct 2017 A1
Foreign Referenced Citations (145)
Number Date Country
1352804 Jun 2002 CN
1641832 Jul 2005 CN
1877824 Dec 2006 CN
101409241 Apr 2009 CN
101449375 Jun 2009 CN
101675516 Mar 2010 CN
101819959 Sep 2010 CN
102324418 Jan 2012 CN
102009001461 Sep 2010 DE
920058 Jun 1999 EP
1449414 Aug 2004 EP
2234158 Sep 2010 EP
S51-050661 May 1976 JP
59189069 Oct 1984 JP
61125062 Jun 1986 JP
S62158338 Jul 1987 JP
62-226307 Oct 1987 JP
1012769 Jan 1989 JP
64-71162 Mar 1989 JP
1118364 May 1989 JP
H04-346436 Dec 1992 JP
06268015 Sep 1994 JP
H06268101 Sep 1994 JP
H06333931 Dec 1994 JP
07-122787 May 1995 JP
09505439 May 1997 JP
H1065054 Mar 1998 JP
H10135220 May 1998 JP
H10135221JP May 1998 JP
11-074295 Mar 1999 JP
11135663 May 1999 JP
H11-145323 May 1999 JP
11251350 Sep 1999 JP
H11260856 Sep 1999 JP
11317476 Nov 1999 JP
2000156461 Jun 2000 JP
2000323516 Nov 2000 JP
3157134 Apr 2001 JP
2001196407 Jul 2001 JP
2001326236 Nov 2001 JP
2002050871 Feb 2002 JP
2002289769 Oct 2002 JP
2003122611 Apr 2003 JP
2003-174124 Jun 2003 JP
2003197668 Jul 2003 JP
2003307897 Oct 2003 JP
2003318327 Nov 2003 JP
2004031754 Jan 2004 JP
2004047702 Feb 2004 JP
2004048048 Feb 2004 JP
2004-172157 Jun 2004 JP
2004-200316 Jul 2004 JP
2004281514 Oct 2004 JP
2004-319892 Nov 2004 JP
2004327855 Nov 2004 JP
2004327856 Nov 2004 JP
2004343030 Dec 2004 JP
2005011874 Jan 2005 JP
2005033141 Feb 2005 JP
2005093551 Apr 2005 JP
2003377641 Jun 2005 JP
2005142378 Jun 2005 JP
2005175019 Jun 2005 JP
2003426392 Jul 2005 JP
2005183880 Jul 2005 JP
2005183923 Jul 2005 JP
2005203497 Jul 2005 JP
2005302765 Oct 2005 JP
2006108588 Apr 2006 JP
2006186086 Jul 2006 JP
2006344917 Dec 2006 JP
2007123595 May 2007 JP
2007-208159 Aug 2007 JP
2007194436 Aug 2007 JP
2007234845 Sep 2007 JP
2007287922 Nov 2007 JP
2007-335464 Dec 2007 JP
200834534 Feb 2008 JP
2008166439 Jul 2008 JP
2008171938 Jul 2008 JP
2008235378 Oct 2008 JP
2008251794 Oct 2008 JP
2008277362 Nov 2008 JP
2008306128 Dec 2008 JP
2009004650 Jan 2009 JP
2009044110 Feb 2009 JP
2009506553 Feb 2009 JP
2009508324 Feb 2009 JP
2009064966 Mar 2009 JP
2009088254 Apr 2009 JP
2009111384 May 2009 JP
2009528706 Aug 2009 JP
2009260132 Nov 2009 JP
2010103129 May 2010 JP
2010135671 Jun 2010 JP
2010192928 Sep 2010 JP
2010199528 Sep 2010 JP
2010206007 Sep 2010 JP
2011514015 Apr 2011 JP
2011166051 Aug 2011 JP
100265563 Sep 2000 KR
20010061849 Jul 2001 KR
2001-0094894 Nov 2001 KR
20020058216 Jul 2002 KR
20060064291 Jun 2006 KR
10-2007-0058680 Jun 2007 KR
20080020069 Mar 2008 KR
100865125 Oct 2008 KR
20080094251 Oct 2008 KR
100886100 Feb 2009 KR
20090033605 Apr 2009 KR
20090123680 Dec 2009 KR
20100033012 Mar 2010 KR
20100062315 Jun 2010 KR
101011863 Jan 2011 KR
20120075855 Jul 2012 KR
101215271 Dec 2012 KR
20130048810 May 2013 KR
20150012285 Feb 2015 KR
200539406 Dec 2005 TW
200721327 Jun 2007 TW
200810079 Feb 2008 TW
200849551 Dec 2008 TW
200933760 Aug 2009 TW
201023277 Jun 2010 TW
201250979 Dec 2012 TW
I605558 Nov 2017 TW
9615458 May 1996 WO
02-13256 Feb 2002 WO
03-045123 May 2003 WO
2004077525 Sep 2004 WO
2006050691 May 2006 WO
2007101251 Sep 2007 WO
2007116544 Oct 2007 WO
2008065896 Jun 2008 WO
2008120755 Oct 2008 WO
2009096950 Aug 2009 WO
2009158098 Dec 2009 WO
2010014103 Feb 2010 WO
2010041630 Apr 2010 WO
2010101163 Sep 2010 WO
2012067177 May 2012 WO
2013059181 Apr 2013 WO
2013065895 May 2013 WO
2014107301 Jul 2014 WO
Non-Patent Literature Citations (69)
Entry
Partial International Search Report for Appln. No. PCT/US2015/032679, dated Sep. 4, 2015.
Partial International Search Report for Appln. No. PCT/US2015/033004, dated Sep. 9, 2015.
Redistributed Chip Package (RCP) Technology, Freescale Semiconductor, 2005, 6 pages.
Taiwan Office Action for 100125521, dated Dec. 20, 2013.
Taiwan Office Action for 100125522, dated Jan. 27, 2014.
Taiwan Office Action for 100141695, dated Mar. 19, 2014.
Taiwan Office Action for 100138311, dated Jun. 27, 2014.
Taiwan Office Action for 100140428, dated Jan. 26, 2015.
Taiwan Office Action for 102106326, dated Sep. 8, 2015.
Taiwan Office Action for 103103350, dated Mar. 21, 2016.
Taiwan Search Report for 105128420, dated Sep. 26, 2017.
U.S. Appl. No. 13/477,532, filed May 22, 2012.
U.S. Office Action for U.S. Appl. No. 12/769,930, dated May 5, 2011.
“Wafer Level Stack—WDoD”, [online] [Retrieved Aug. 5, 2010] Retrieved from internet: <http://www.3d-plus.com/techno-wafer-level-stack-wdod.php>, 2 pages.
Written Opinion for Appln. No. PCT/US2014/050125, dated Jul. 15, 2015.
Yoon, PhD, Seung Wook, “Next Generation Wafer Level Packaging Solution for 3D Integration,” May 2010, STATS ChipPAC Ltd.
Chinese Office Action Search Report for Application No. 2014800551784 dated Jan. 23, 2018.
European Search Report for Appln. No. EP12712792, dated Feb. 27, 2018, 2 pages.
Bang, U.S. Appl. No. 10/656,534, filed Sep. 5, 2003, now U.S. Pat. No. 7,294,928 (cited).
Brochure, “High Performance BVA PoP Package for Mobile Systems,” Invensas Corporation, May 2013, 20 pages.
Brochure, “Invensas BVA PoP for Mobile Computing: Ultra High IO Without TSVs,” Invensas Corporation, Jun. 26, 2012, 4 pages.
Campos et al., “System in Package Solutions Using Fan-Out Wafer Level Packaging Technology,” SEMI Networking Day, Jun. 27, 2013, 31 pages.
Chinese Office Action for Application No. 201180022247.8 dated Sep. 16, 2014.
Chinese Office Action for Application No. 201180022247.8 dated Apr. 14, 2015.
Chinese Office Action for Application No. 201310264264.3 dated May 12, 2015.
EE Times Asia “3D Plus Wafer Level Stack” [online] [Retrieved Aug. 5, 2010] Retrieved from internet: <http://www.eetasia.com/ART_8800428222_280300_NT_DEC52276.htm>, 2 pages.
Ghaffarian Ph.D., Reza et al., “Evaluation Methodology Guidance for Stack Packages,” Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, NASA, Oct. 2009, 44 pages.
IBM et al., “Method of Producing Thin-Film Wirings with Vias,” IBM Technical Disclosure Bulletin, Apr. 1, 1989, IBM Corp., (Thornwood), US-ISSN 0018-8689, vol. 31, No. 11, pp. 209-210, https://priorart.ip.com.
International Search Report for Appln. No. PCT/US2005/039716, dated Apr. 5, 2006.
International Search Report and Written Opinion for Appln. No. PCT/US2011/024143, dated Sep. 14, 2011.
International Search Report and Written Opinion for Appln. No. PCT/US2011/024143, dated Jan. 17, 2012.
International Search Report and Written Opinion for Appln. No. PCT/US2011/060551, dated Apr. 18, 2012.
International Search Report and Written Opinion for Appln. No. PCT/US2011/044342, dated May 7, 2012.
International Search Report and Written Opinion for Appln. No. PCT/US2011/044346, dated May 11, 2012.
International Search Report and Written Opinion for Appln. No. PCT/US2012/060402, dated Apr. 2, 2011.
International Search Report and Written Opinion for Appln. No. PCT/US2013/026126, dated Jul. 25, 2013.
International Search Report and Written Opinion for Appln. No. PCT/US2013/052883, dated Oct. 21, 2011.
International Search Report and Written Opinion for Appln. No. PCT/US2013/041981, dated Nov. 13, 2013.
International Search Report and Written Opinion for Appln. No. PCT/US2013/053437, dated Nov. 25, 2013.
International Search Report and Written Opinion for Appln. No. PCT/US2013/075672, dated Apr. 22, 2014.
International Search Report and Written Opinion for Appln. No. PCT/US2014/014181, dated Jun. 13, 2014.
International Search Report and Written Opinion for Appln. No. PCT/US2014/050125, dated Feb. 4, 2015.
International Search Report and Written Opinion for Appln. No. PCT/US2014/050148, dated Feb. 9, 2015.
International Search Report and Written Opinion for Appln. No. PCT/US2014/055695, dated Mar. 20, 2015.
International Search Report and Written Opinion for Appln. No. PCT/US2015/011715, dated Apr. 20, 2015.
International Search Report and Written Opinion for Appln. No. PCT/US2015/032679, dated Nov. 11, 2015.
International Search Report and Written Opinion for Appln. No. PCT/US2014/055695, dated Dec. 15, 2015.
International Search Report and Written Opinion for Appln. No. PCT/US2016/056526, dated Jan. 20, 2017.
International Search Report and Written Opinion for Appln. No. PCT/US2016/056402, dated Jan. 31, 2017.
International Search Report and Written Opinion for Appln. No. PCT/US2016/068297, dated Apr. 17, 2017.
Japanese Office Action for Appln. No. 2013-509325, dated Oct. 18, 2013.
Japanese Office Action for Appln. No. 2013-520776, dated Apr. 21, 2015.
Japanese Office Action for Appln. No. 2013-520777, dated May 22, 2015.
Jin, Yonggang et al., “STM 3D-IC Package and 3D eWLB Development,” STMicroelectronics Singapore/STMicroelectronics France, May 21, 2010.
Kim et al., “Application of Through Mold via (TMV) as PoP Base Package,” 2008, 6 pages.
Korean Office Action for Appn. 10-2011-0041843, dated Jun. 20, 2011.
Korean Office Action for Appn. 2014-7025992, dated Feb. 5, 2015.
Korean Search Report KR10-2010-0113271, dated Jan. 12, 2011.
Korean Search Report KR10-2011-0041843, dated Feb. 24, 2011.
Meiser, S., “Klein Und Komplex,” Elektronik Irl Press Ltd, DE, vol. 41, No. 1, Jan. 7, 1992 (Jan. 7, 1992) pp. 72-77, XP000277326, [ISR Appln. No. PCT/US2012/060402, dated Feb. 21, 2013 provides concise stmt. of relevance).
Neo-Manhattan Technology, A Novel HDI Manufacturing Process, “High-Density Interconnects for Advanced Flex Substrates and 3-D Package Stacking,” IPC Flex & Chips Symposium, Tempe, AZ, Feb. 11-12, 2003.
North Corporation, Processed intra-Layer Interconnection Material for PWBs [Etched Copper Bump with Copper Foil], NMBITM, Version 2001.6, 1 p.
NTK HTCC Package General Design Guide, Communication Media Components Group, NGK Spark Plug Co., Ltd., Komaki, Aichi, Japan, Apr. 2010, 32 pages.
Partial International Search Report from Invitation to Pay Additional Fees for Appln. No. PCT/US2012/028738, dated Jun. 6, 2012.
Partial International Search Report for Appln. No. PCT/US2012/060402, dated Feb. 21, 2013.
Partial International Search Report for Appln. No. PCT/US2013/026126, dated Jun. 17, 2013.
Partial International Search Report for Appln. No. PCT/US2013/075672, dated Mar. 12, 2014.
Partial International Search Report for Appln. No. PCT/US2014/014181, dated May 8, 2014.
International Search Report and Written Opinion for Appln. No. PCT/US2017/064437, dated Mar. 29, 2018.
Related Publications (1)
Number Date Country
20180146557 A1 May 2018 US
Divisions (1)
Number Date Country
Parent 14639789 Mar 2015 US
Child 15875842 US