Patent Application
20140166205
The embodiments described herein pertain generally to a process monitoring device for use in a substrate processing apparatus, a process monitoring method and a substrate processing apparatus. The embodiments particularly pertain to a process monitoring device, a process monitoring method and a substrate processing apparatus for investigating a structure of a processing target substrate.
In the field of semiconductor manufacture, there has been an increasing demand for advanced level of miniaturization and densification of semiconductor devices. Under this circumstances, in order to manufacture a semiconductor device having a higher added value, a thickness of a film formed by, e.g., a CVD (Chemical Vapor Deposition) process, a thickness of a film when performing an etching process, a structure of a wafer surface, and so forth are measured during the processes, and by comparing the measured values with reference values, various kinds of processing parameters are corrected. For this purpose, conventionally, there has been developed a process monitoring device configured to investigate a surface structure of a wafer by irradiating light to the wafer and by detecting and analyzing reflection light from the wafer. As one example, described in Japanese Patent Laid-open Publication No. 2005-033187 (Patent Document 1) is a device and a method for measuring a surface structure of a wafer by using an optical method such as ellipsometry.
Patent Document 1: Japanese Patent Laid-open Publication No. 2005-033187
Besides the device described in Patent Document 1, in a process monitoring device that measures a structure of a processing target substrate by using an optical method, the following problems may occur, and, accordingly, it is not possible to perform an accurate measurement.
In order to irradiate light to a surface of the processing target substrate while processing the processing target substrate, it is required to introduce light into a processing vessel from a light source. In general, the light source and the processing vessel are connected by using an optical fiber cable.
Here, if the optical fiber cable is used continuously over time, since the optical fiber cable would be damaged and degraded by an ultraviolet component of the light as time goes on, the ultraviolet component passing through the optical fiber cable is gradually reduced. Thus, while using the device for a long time, in case of detecting an intensity spectrum of reflection light from the processing target substrate and analyzing the surface structure of the processing target substrate by using, as one parameter, the intensity information, the surface structure of the processing target substrate may not be measured accurately. Particularly, when measuring a thickness of a very thin film in a range of several nanometers, an ultraviolet ray having a shorter wavelength needs to be used. Thus, if the ultraviolent component of the light is reduced, an error may occur in the measurement result. Therefore, it is not possible to perform the accurate measurement.
In view of the foregoing problems, example embodiments provide a process monitoring device configured to measure a structure of a processing target substrate with higher precision by using an optical method.
The example embodiments also provide a process monitoring method that investigates a structure of a processing target substrate with higher precision by using an optical method.
The example embodiments further provide a substrate processing apparatus configured to investigate a structure of a processing target object with higher precision by using an optical method.
In one example embodiment, a process monitoring device investigates a structure of a processing target substrate by irradiating light to a surface of the processing target substrate provided within a processing vessel of a substrate processing apparatus and detects reflection light from the processing target substrate. The process monitoring device includes a light source unit configured to generate and output light; a light detection unit configured to detect an intensity of light inputted from an outside thereof; a first optical path configured to guide the light outputted from the light source unit to the processing target substrate and guide the reflection light from the processing target substrate to the light detection unit; a second optical path that is formed to have a light propagation characteristic equivalent to that of the first optical path and is configured to guide the light outputted from the light source unit to the light detection unit without allowing the light to pass the processing target substrate; and a controller configured to correct intensity information of the light detected by the light detection unit via the first optical path based on intensity information of the light detected by the light detection unit via the second optical path, and configured to analyze the structure of the processing target substrate.
With this configuration, a variation of a light intensity caused by the aging and the degradation of the first optical path as a result of a continuous use can be accurately measured by measuring a variation of an intensity of the light detected by the light detection unit via the second optical path having the light propagation characteristic equivalent to that of the first optical path. As a result, based on the variation information, it is possible to correct the intensity information of the light detected by the light detection unit via the first optical path. That is, since an influence of the aging and the degradation of the first optical path can be excluded from the intensity information of the light detected by the light detection unit via the first optical path, it is possible to measure an intensity of the reflection light from the processing target substrate. Thus, the structure of the processing target substrate can be investigated with high precision.
Desirably, each of the first optical path and the second optical path may include an optical fiber cable, and the optical fiber cables may be made of the same material and have the same total length. With this configuration, since the first optical path and the second optical path are made of the same material having the same light propagation characteristic, the variation of the light intensity caused by the aging and the degradation of the first optical path can be more accurately detected. Thus, the structure of the processing target substrate can be investigated with higher precision.
Desirably, the process monitoring device may further include a first mirror disposed to reflect the light outputted from the light source unit and configured to change a reflection direction of the light; and a second mirror disposed to further reflect the light reflected by the first mirror. The first mirror may be configured to periodically change the reflection direction of the light between a reflection direction toward the processing target substrate and a reflection direction toward the second mirror. Further, the first optical path may be configured to guide the light outputted from the light source unit to the processing target substrate via the first mirror and configured to guide the reflection light from the processing target substrate to the light detection unit. Furthermore, the second optical path may be configured to guide the light outputted from the light source unit to the light detection unit via the first mirror and the second mirror.
More desirably, the process monitoring device may further include an optical fiber cable configured to guide the light outputted from the light source unit to the first mirror. The first optical path may be configured to guide the light outputted from the light source unit to the processing target substrate via the optical fiber cable and the first mirror, and configured to guide the reflection light from the processing target substrate to the light detection unit via the first mirror and the optical fiber cable. Further, the second optical path may be configured to guide the light outputted from the light source unit to the second mirror via the optical fiber cable and the first mirror, and configured to guide the reflection light from the second mirror to the light detection unit via the first mirror and the optical fiber cable.
With this configuration, since the first optical path and the second optical path can share the optical fiber cable in common, the variation of the light intensity caused by the aging and the degradation of the first optical path can be detected more accurately. Thus, it is possible to investigate the structure of the processing target substrate with higher precision. Further, since the first optical path and the second optical path can be switched by controlling the first mirror configured to change the reflection direction of the light, it is possible to control the investigation of the structure of the processing target substrate as required. Furthermore, since a part of the first optical path and the second optical path is shared therebetween and the first optical path and the second optical path can be switched by using a simple mirror member, a structure of the process monitoring device can be more simplified.
Desirably, the controller may be configured to analyze the structure of the processing target substrate by correcting the intensity information of the light detected by the light detection unit via the first optical path based on a difference between the intensity information of the light detected by the light detection unit via the second optical path and intensity information of light detected by the light detection unit via the second optical path at the time of starting a process. With this configuration, it may be possible to accurately detect a variation of the light intensity after starting the process when the aging and the degradation does not occur. Accordingly, the influence of the aging and the degradation of the first optical path can be excluded more securely. Thus, the structure of the processing target substrate can be investigated with higher precision.
Desirably, the light generated by the light source unit may have a wavelength equal to or smaller than about 300 nm. With this configuration, by using the light having a relatively short wavelength, a structure with a smaller dimension can be investigated.
In another example embodiment, a process monitoring method investigates a structure of a processing target substrate by irradiating light to a surface of the processing target substrate provided within a processing vessel of a substrate processing apparatus and detects reflection light from the processing target substrate. The process monitoring method includes a first optical path passing process that guides light outputted from a light source unit to the processing target substrate and guides the reflection light from the processing target substrate to a light detection unit configured to detect an intensity of light; a second optical path passing process that guides light outputted from the light source unit to the light detection unit without allowing the light to pass the processing target substrate; and an analyzing process that analyzes the structure of the processing target substrate by correcting intensity information of the light detected by the light detection unit through the first optical path passing process based on intensity information of the light detected by the light detection unit through the second optical path passing process. Further, a first optical path through which the light passes in the first optical path passing process and a second optical path through which the light passes in the second optical path passing process are formed to have the same light propagation characteristic.
With this configuration, a variation of a light intensity caused by aging and degradation of the first optical path as a result of a continuous use can be accurately measured by measuring a variation of an intensity of the light detected by the light detection unit via the second optical path having the light propagation characteristic equivalent to that of the first optical path. As a result, based on variation information, it is possible to correct the intensity information of the light detected by the light detection unit through the first optical path passing process. That is, since an influence of the aging and the degradation of the first optical path can be excluded from the intensity information of the light detected by the light detection unit through the first optical path passing process, it is possible to measure an intensity of the reflection light from the processing target substrate. Thus, the structure of the processing target substrate can be investigated with high precision.
Desirably, each of the first optical path and the second optical path may include an optical fiber cable, and the optical fiber cables may be made of the same material and have the same total length. With this configuration, since the first optical path and the second optical path are made of the same material having the same light propagation characteristic, the variation of the light intensity caused by the aging and the degradation of the first optical path can be more accurately detected. Thus, the structure of the processing target substrate can be investigated with higher precision.
Desirably, the first optical path passing process may include guiding the light outputted from the light source unit to a first reflection member configured to change a reflection direction of the light; reflecting the light toward the processing target substrate by the first reflection member; and guiding the reflection light from the processing target substrate to the light detection unit. Further, the second optical path passing process may include guiding the light outputted from the light source unit to the first reflection member; reflecting the light from the first reflection member toward a second reflection member configured to further reflect the reflection light from the first reflection member; and guiding the reflection light from the second reflection member to the light detection unit. Furthermore, the first reflection member may be controlled to periodically change the reflection direction of the light between a reflection direction toward the processing target substrate and a reflection direction toward the second reflection member. More desirably, in the first optical path passing process, the reflection light from the processing target substrate may be guided to the light detection unit via the first reflection member, and in the second optical path passing process, the reflection light from the second reflection member may be guided to the light detection unit via the first reflection member.
With this configuration, in the first optical path passing process and the second optical path passing process, an optical path between the light source unit and the first reflection member can be shared. That is, it is possible to form this common optical path with, by way of example, but not limitation, a single optical fiber cable. Accordingly, the variation of the light intensity caused by the aging and the degradation of the first optical path can be more accurately detected, so that the structure of the processing target substrate can be investigated with higher precision. Further, since the first optical path and the second optical path can be switched by controlling the first reflection member configured to change the reflection direction of the light, it is possible to control the investigation of the structure of the processing target substrate as required.
Desirably, the analyzing process may include a first measurement process that measures an intensity of the light detected by the light detection unit through the first optical path passing process; a second measurement process that measures an intensity of the light detected by the light detection unit through the second optical path passing process; a calculation process that calculates a light intensity difference between an intensity of light detected by the light detection unit through the second optical path passing process at the time of starting a process and the intensity of the light measured in the second measurement process; a correction process that corrects the intensity of the light measured in the first measurement process based on the light intensity difference calculated in the calculation process; and a structure analyzing process that analyzes the structure of the processing target substrate based on the corrected intensity of the light. With this configuration, it may be possible to accurately detect the variation of the light intensity after starting the process when the aging and the degradation does not occur. Accordingly, the influence of the aging and the degradation of the first optical path can be excluded more securely. Thus, the structure of the processing target substrate can be investigated with higher precision.
In yet another example embodiment, a substrate processing apparatus includes a processing vessel configured to perform therein a plasma process on a processing target substrate; a mounting table provided in the processing vessel and configured to mount thereon the processing target substrate; a gas supply unit configured to supply a processing gas into the processing vessel; a plasma generating unit configured to generate plasma within the processing vessel; and a process monitoring device configured to investigate a structure of the processing target substrate by irradiating light to a surface of the processing target substrate and detecting reflection light from the processing target substrate. Further, the process monitoring device includes a light source unit configured to generate and output light; a light detection unit configured to detect an intensity of light inputted from an outside thereof; a first optical path configured to guide the light outputted from the light source unit to the processing target substrate and guide the reflection light from the processing target substrate to the light detection unit; a second optical path that is formed to have a light propagation characteristic equivalent to that of the first optical path and guides light outputted from the light source unit to the light detection unit without allowing the light to pass the processing target substrate; and a controller configured to correct intensity information of the light detected by the light detection unit via the first optical path based on intensity information of the light detected by the light detection unit via the second optical path, and configured to analyze a structure of the processing target substrate.
With this configuration, it may be possible to provide the substrate processing apparatus configured to investigate the structure of the processing target substrate with high precision while performing the plasma process on the processing target substrate.
In accordance with example embodiments, a variation of a light intensity caused by aging and degradation of a first optical path as a result of a continuous use can be accurately measured by measuring a variation of the intensity of the light detected by a light detection unit via a second optical path having a light propagation characteristic equivalent to that of the first optical path. As a result, based on variation information, it is possible to correct intensity information of the light detected by the light detection unit via the first optical path. That is, since an influence of the aging and the degradation of the first optical path can be excluded from the intensity information of the light detected by the light detection unit via the first optical path, it is possible to accurately measure an intensity of reflection light from a processing target substrate. Thus, a structure of the processing target substrate can be investigated with high precision.
In the following, example embodiments will be described, and reference is made to the accompanying drawings, which form a part of the description. First, referring to
Referring to
The plasma processing apparatus 101 includes a processing vessel 102 configured to perform therein a plasma etching process on the wafer W; a gas supply unit 103 configured to supply an etching gas into the processing vessel 102; a circular plate-shaped supporting table 104 configured to support the wafer W from below; a plasma generating unit 105 configured to generate plasma within the processing vessel 102; an exhaust device 107 configured to exhaust a gas within the processing vessel 102 through an exhaust pipe 106 formed in a lower portion of the processing vessel 102; and a process controller (not shown) configured to control the plasma processing apparatus 101. The process controller may control overall operations of the plasma processing apparatus 101, including a gas flow rate in the plasma processing gas supply unit 103, a pressure within the processing vessel 102, and so forth.
The process monitoring device 11 in accordance with the example embodiment is configured to measure a thickness of a thin film formed on the surface of the wafer W by irradiating light to the surface of the wafer W and detecting reflection light therefrom while an etching process is being performed on the wafer W in the processing vessel 102.
The process monitoring device 11 includes the optical monitor 12, a first mirror 13, a second mirror 14 and an optical fiber cable 15. The optical monitor 12 has a light source unit (not shown) configured to generate and output the light; and a light detection unit (not shown) configured to detect an intensity of light introduced from the outside. The first mirror 13 is provided above the processing vessel 102 and configured to reflect the light outputted from the optical monitor 12. The second mirror 14 is provided to further reflect the light reflected by the first mirror 13. The optical fiber cable 15 is configured to guide the light outputted from the optical monitor 12 to the first mirror 13.
The optical monitor 12 includes the light source unit configured to generate light and to output the light through a light passing opening A. The light source unit configured to generate the light may be implemented by, but not limited to, a xenon lamp. In such a case, light having a spectrum covering from an ultraviolet range to an infrared range is generated and outputted through the light passing opening A.
Further, the optical monitor 12 includes the light detection unit configured to receive the incident light and measure an intensity of the incident light. When white light outputted from, e.g., a xenon lamp as a light source is received, the light detection unit separates the white light by the frequency bands thereof by an incorporated spectrometer and extracts a spectrum intensity corresponding to a frequency band suitable for investigating the structure of the wafer W. Then, the light intensity information obtained in this way is outputted to a controller 17. Operations of the controller 17 will be elaborated later.
The optical fiber cable 15 is a flexible cable having a certain length and is configured to transmit light. In general, the optical monitor 12 is placed at a position spaced apart from the processing vessel 102. Accordingly, the optical fiber cable 15 is used to guide the light from the optical monitor 12 up to a region above the processing vessel 102.
The first mirror 13 is controlled to change a reflection direction of the light introduced through the optical fiber cable 15 between a direction toward the wafer W placed in the processing vessel 102 and a direction toward the second mirror 14 disposed in a vicinity of the first mirror 13. The control and the operation of the first mirror 13 will be elaborated later.
The second mirror 14 is fastened in the vicinity of the first mirror 13 such that a surface thereof faces the first mirror 13. In the present example embodiment, a slit plate 16 configured to control a reflectance of reflection light from the second mirror 14 to the first mirror 13 to be constant is provided between the first mirror 13 and the second mirror 14. The first mirror 13, the second mirror 14 and the slit plate 16 are accommodated in a hollow case 18.
Now, optical paths in
In the state shown in
In the state shown in
As stated above, in the process monitoring device 11 in accordance with the present example embodiment, the light outputted from the optical monitor 12 is guided by the optical fiber cable 15 and the first mirror 13. As a result, the first optical path 21 sequentially passing through the point A, the point B, the point C, the point B and the point A (point A→point B→point C→point B→point A) shown in
From the lights returning back to the optical monitor 12 via each of the first optical path 21 and the second optical path 22, only the frequency components suitable for measurement are extracted by the spectrometer, as mentioned above. Then, information regarding these light intensities is sent to the controller 17. The controller 17 calculates the thickness of the thin film formed on the wafer W based on a method as will be discussed below. The controller 17 is connected to the aforementioned process controller to communicate with each other.
Now, a process monitoring method for measuring a film thickness by using the process monitoring device 11 in accordance with the example embodiment will be discussed with reference to
Referring to
In order to measure the thickness of the thin film formed on the wafer W, at block 31 (starting process), reference data according to a correlation between intensity of reflection light from the wafer W detected by the optical monitor 12 and the film thickness are obtained. First, a reference wafer having thereon a thin film of a certain thickness is prepared, and the thickness of the reference wafer is measured by using an electron microscope or the like. Subsequently, light is irradiated to the reference wafer, and an ultraviolet intensity of reflection light from the reference wafer is measured. Then, while performing an etching process on the reference wafer, ultraviolet intensities of reflection lights are measured sequentially. After a preset time elapses, the etching process is finished, and a film thickness at that moment is measured by using the electron microscope or the like.
As shown in
As depicted in
δL=(1400−1300)/(12.4−1.9)=9.5 [Relative intensity/nm]
This variation δL is reference data indicating the correlation between the light intensity and the film thickness. Further, this variation δL is required to calculate the film thickness based on the light intensity.
After block 31, an etching process is performed on a wafer W to be actually processed. While performing the etching process on the wafer W, the second optical path passing process 32, the first optical path passing process 33 and the analyzing process 34, which will be described later, are performed. In an actual production process, these processes are performed on a multiple number of wafers W continuously. In such a case, the processes of etching the reference wafer and obtaining the reference data δL at block 31 need to be performed at least one time when starting the process. That is, once the reference data are obtained when starting the process, the reference data can also be used in the subsequence processes. Furthermore, when performing same processes, it may be possible to share the reference data.
Thereafter, at block 32 (second optical path passing process), the reflection angle of the first mirror 13 is set as depicted in
Then, at block 33 (first optical path passing process), the reflection angle of the first mirror 13 is set as depicted in
The second optical path passing process (block 32) is carried out during the period T5. That is, light is outputted from the light source unit and a light intensity is measured during the period T1. Then, the light is not outputted during a period T2. The first optical path passing process (block 33) is carried out during the period T6. That is, light is outputted from the light source unit and a light intensity is measured during the period T3. Then, the light is not outputted during a period T4. As an example cycle of the ON/OFF signal shown in
Then, at block 34 (analyzing process), intensities of lights passing through the second optical path 22 and the first optical path 21 are measured, respectively, and based on the measured intensity information, a thickness of a thin film formed on the wafer W is calculated.
In the present example embodiment, a film thickness may be calculated by detecting a light intensity of an ultraviolet component among frequency components of the light detected by the light detection unit. That is, at block 341 and block 342, an ultraviolet intensity of the light inputted to the optical monitor 12 is measured by using the spectrometer.
Herein, as reference data,
As shown in
As shown in
δt=25/9.5≈2.63 nm
As can be seen clearly from this result, if the optical fiber cable 15 is continuously used in the film thickness measurement process, the measurement result includes an error corresponding to the variation δt. Thus, it may become difficult to accurately measure the film thickness.
Therefore, in accordance with the present example embodiment, the analyzing process (block 34) includes the light intensity difference calculation process (block 343) for calculating the decrease δx and the correction process (block 344) for correcting the light intensity information based on the decrease δx. The light intensity difference calculation process (block 343) and the correction process (block 344) are performed before calculating the film thickness.
At block 343, the decrease δx is calculated by comparing the information of the light intensity measured at block 341 with the information of the light intensity measured at block 341 at the time of starting the process. That is, referring to
After block 344, at block 345 (film thickness calculation process), the thickness of the thin film formed on the wafer W is calculated based on the corrected light intensity information. The film thickness is calculated by using the variation δL obtained at block 31. Hereinafter, a specific example of the calculation of the film thickness at block 345 will be described.
A thickness of a thin film formed on the wafer W before starting the process is represented by t0 and a light intensity measured at block 342 right after the process is started is represented by L0. Further, a light intensity measured at block 342 as a result of an etching process is represented by Lx and a decrease obtained at block 343 is represented by δx. In this case, at block 344, the light intensity Lx measured at block 342 is corrected to Lx+δx. Based on the corrected light intensity information, a thickness te decreased by the etching process after starting the process is calculated by the following equation.
t
e=(Lx+δx−L0)/9.5
Therefore, a film thickness tr of the thin film remaining on the wafer W at that moment is calculated by the following equation.
t
r
=t
0
−t
e
=t
0−(Lx+δx−L0)/9.5
In this way, at block 345, the film thickness t, of the thin film remaining on the wafer W can be calculated quantitatively based on the light intensity information.
After the film thickness is calculated as described above at block 34, the process returns back to block 32. Then, an etching process is performed on the wafer W and the film thicknesses are calculated sequentially. When the thickness of the thin film formed on the wafer W reaches a preset thickness, the process is finished at block 35 (finishing process). That is, data regarding the required film thickness after the etching process are recorded in advance, and when the thickness tr of the remaining thin film calculated at block 34 reaches the required film thickness, the cycle shown in
In the present example embodiment, even if the process monitoring device 11 is continuously used, it is possible to calculate a film thickness with higher precision. Details thereof will be explained below.
As shown in
In the process monitoring method in accordance with the present example embodiment, before performing the first optical path passing process (block 33) for obtaining light intensity information required for calculating a film thickness, the second optical path passing process (block 32) for obtaining the decrease δx of the light intensity caused by the aging and the degradation of the optical fiber cable is carried out. Then, at block 34, the light intensity information for the calculation of the film thickness is frequently corrected by the decrease δx. Further, the aging and the degradation of the optical fiber cable, which are caused by the ultraviolet component, progress every several minutes. In this regard, in the present example embodiment, as shown in
Further, the first optical path 21 and the second optical path 22 share the optical fiber cable 15. A path from the point B to the point C in the first optical path 21 and a path from the point D to the point E in the second optical path 22 neither affect the characteristics of the light passing therethrough nor cause a decrease of the ultraviolet component. Therefore, it may be regarded that the first optical path 21 and the second optical path 22 have the same light propagation characteristics, such as a decrease of the ultraviolet component due to the aging and the degradation of the optical fiber cable.
That is, in accordance with the present example embodiment, a variation of the light intensity caused by the aging and the degradation of the optical fiber cable 15 in the first optical path 21 can be detected accurately by measuring an intensity variation of the light passing through the second optical path 22. Thus, it is possible to correct the light intensity information required for calculation of the film thickness obtained at block 33 to offset the variation. That is, the influence of the aging and the degradation of the optical fiber cable 15 can be excluded from the light intensity information for calculating the film thickness. Therefore, it may become possible to measure a thickness of a thin film formed on the wafer W accurately.
Further, in accordance with the present example embodiment, the first optical path 21 and the second optical path 22 can be selected by electrically controlling the first mirror 13 configured to change the reflection angle thereof. That is, it is possible to selectively control the main measurement and the measurement for correction as required. Thus, the film thickness of the wafer W can be measured in a securely controlled manner. Since the switching between the first optical path 21 and the second optical path 22 can be achieved by, but not limited to, the galvano mirror as a general-purpose member, the process monitoring device 11 can be more easily structured.
The process monitoring device 11 in accordance with the present example embodiment can be applied to any kinds of plasma processing apparatuses such as a microwave plasma processing apparatus using a microwave as a plasma source, a parallel plate type plasma processing apparatus, an ICP (Inductively-Coupled Plasma) plasma processing apparatus, or an ECR (Electron Cyclotron Resonance) plasma processing apparatus. Hereinafter, as an application example, there will be explained an example embodiment where the process monitoring device 11 is applied to a microwave plasma processing apparatus using a slot antenna.
Referring to
The processing vessel 112 includes a bottom 121 positioned under the supporting table 114 and a sidewall 122 extended upwardly from a periphery of the bottom 121. The sidewall 122 has a substantially cylindrical shape. An exhaust pipe 123 through which a gas is exhausted is provided in the bottom 121 of the processing vessel 112 to pass through a part thereof. The processing vessel 112 has a top opening, and an inside of the processing vessel 112 is airtightly sealed by an annular member 124 provided at an upper portion of the processing vessel 112, a dielectric window 116 to be described later, and an O-ring 125 as a sealing member provided between the dielectric window 116 and the annular member 124.
The plasma processing gas supply unit 113 includes a first plasma processing gas supply unit 126 configured to supply a gas toward a central portion of wafer W; and a second plasma processing gas supply unit 127 configured to supply a gas from a peripheral side of the wafer W. The first plasma processing gas supply unit 126 supplies a gas into the processing vessel 112 through a gas supply hole 130a formed at a central portion of the dielectric window 116 in a diametric direction thereof. The first plasma processing gas supply unit 126 is configured to supply a plasma processing gas while a flow rate thereof is controlled by a gas supply system 129 connected to the first plasma processing gas supply unit 126. The second plasma processing gas supply unit 127 is configured to supply a plasma processing gas into the processing vessel 112 through multiple gas supply holes 130b formed at a part of an upper portion of the sidewall 122. The multiple gas supply holes 130b are substantially equi-spaced along the periphery of the sidewall 122.
The supporting table 114 is configured to hold thereon the wafer W by an electrostatic chuck (not illustrated). The electrostatic chuck may be omitted. The supporting table 114 can be set to a required temperature by a temperature controller (not illustrated) provided therein. The supporting table 114 is supported on a cylinder-shaped insulating support 131 vertically extended from below the bottom 121. The exhaust pipe 123 is provided to pass through a part of the bottom 121 of the processing vessel 112. A downstream side of the exhaust pipe 123 is connected to an exhaust device (not illustrated). The exhaust device includes a vacuum pump such as a turbo molecular pump or the like. The inside of the processing vessel 112 can be depressurized to a certain pressure level by the exhaust device.
The plasma generating device 119 includes a microwave generating device 120, the dielectric window 116, a slot antenna plate 117, a dielectric member 118 and a waveguide 128. The microwave generating device 120 is provided at an outside of the processing vessel 112 and configured to generate a microwave for plasma excitation. The dielectric window 116 is provided to face the supporting table 114 and configured to introduce the microwave generated by the microwave generating device 120 into processing vessel 112. The slot antenna plate 117 is provided above the dielectric window 116 and configured to radiate the microwave to the dielectric window 116. The dielectric member 118 is provided above the slot antenna plate 117 and configured to propagate the introduced microwave along a diametric direction thereof. The waveguide 128 is configured to introduce the microwave transmitted from the microwave generating device 120 to the dielectric member 118. Above the dielectric member 118, a cover plate 115 is provided to cover the dielectric member 118 from above.
The dielectric window 116 is made of a substantially circular plate-shaped dielectric material and placed on the annular member 124 to close the top opening of the processing vessel 112. As a specific example, but not limitation, the dielectric window 116 may be made of quartz, alumina, or the like.
The slot antenna plate 117 is a circular and thin plate member. The slot antenna plate 117 has multiple slots 117s. The microwave introduced from the dielectric member 118 to the slot antenna plate 117 is radiated toward the dielectric window 116 through these slots 117s.
The dielectric member 118 is a circular and thin plate member, and is arranged concentrically with the dielectric window 116. Further, the dielectric member 118 is positioned such that a bottom surface of the dielectric member 118 faces a top surface of the dielectric window 116. The dielectric member 118 propagates the microwave introduced from the waveguide 128 outward in a radial direction. Thus, the microwave is introduced to the slot antenna plate 117.
The waveguide 128 is made of a conductor having a circular cross section or a rectangular cross section, and one end of the waveguide 128 is connected to the microwave generating device 120 while the other end thereof is connected to a central portion of the slot antenna plate 117.
The microwave supplied from the microwave generating device 120 propagates within the waveguide 128 and is introduced into the dielectric member 118. Then, the microwave propagates within the dielectric member 118 outward in the radial direction, and then, is radiated to the dielectric window 116 through the multiple slots 117s formed in the slot antenna plate 117. The microwave introduced into the dielectric window 116 forms an electric field within the dielectric window 116. Then, the microwave transmitted through the dielectric window 116 forms an electric field directly below the dielectric window 116. Plasma is generated by exciting a plasma processing gas within the processing vessel 112.
In the present example embodiment, the process monitoring device 11 is provided at a position a slightly deviated outward from a central portion of the cover plate 115. The optical passage 139 is formed through the dielectric window 116, the slot antenna plate 117, the dielectric member 118 and the cover plate 115 in a vertical direction to be located directly under a case 18 of the process monitoring device 11. A light transmission member configured to transmit light is filled in the optical passage 139 while maintaining a depressurized state within the processing vessel 112. The light transmission member is made of, by way of example, but not limitation, quartz that does not affect the characteristics of the light passing therethrough. Further, the light transmission member may be formed as one body with the dielectric window 116. Furthermore, if a film thickness of a wafer W is measured by using the ultraviolet ray as in the above-described example embodiment, synthetic quartz having a high transmittance to an electromagnetic wave of a short wavelength may be applied to the optical passage 139. In such a case, when the light passes through the optical passage 139, it may be possible to effectively suppress a decrease of an ultraviolet intensity.
As stated above, by providing the process monitoring device 11 in accordance with the present example embodiment in the plasma processing apparatus 111 as depicted in
Hereinafter, a process monitoring device 51 in accordance with another example embodiment will be explained with reference to
Referring to
Herein, the process monitoring device 51 in accordance with the present example embodiment includes a first optical fiber cable 55 configured to guide light outputted from a first light passing opening A1 of the light source unit 52 to the wafer W; a second optical fiber cable 56 configured to guide reflection light from the wafer W to a first light passing opening B1 of the light detection unit 53; and a third optical fiber cable 57 configured to guide light outputted from a second light passing opening A2 of the light source unit 52 to a second light passing opening B2 of the light detection unit 53 without allowing the light to pass the wafer W.
At an end of the first optical fiber cable 55 on a side of the wafer W, there is provided a light emitting unit 58 configured to irradiate the light transmitted through the optical fiber cable toward the wafer W. Further, at an end of the second optical fiber cable 56 on a side of the wafer W, there is provided a light receiving unit 59 configured to receive the reflection light from the wafer W and to transmit the reflection light to the second optical fiber cable 56.
In the present example embodiment, as depicted in
A second optical path 62 is formed by the third optical fiber cable 57. That is, the light outputted from the light source unit 52 is guided to reach the point A2 and the point B2 (point A2→point B2) through the third optical fiber cable 57 without allowing the light to pass the wafer W.
Herein, the first to third optical fiber cables 55, 56, and 57 may be selected such that the first optical path 61 and the second optical path 62 have the same light propagation characteristics. That is, as a specific example, a length of the third optical fiber cable 57 may be set to be equal to the sum of lengths of the first optical fiber cable 55 and the second optical fiber cable 56. Further, the first to third optical fiber cables 55, 56, and 57 are set to be of the same kind. With this configuration, the light propagation characteristics of the first optical path 61 and the second optical path 62 can be made identical. That is, degrees of aging and degradation caused by the ultraviolet component in the first optical path 61 and the second optical path 62 may be identical to each other.
The controller 54 is configured to calculate a thickness of a thin film formed on the wafer W based on intensity information of lights inputted to the light detection unit 53.
Hereinafter, an operation of the process monitoring device 51 in accordance with this another example embodiment will be explained. The process monitoring device 51 is operated according to the flowcharts of
At block 31 (starting process), reference data according to a correlation between a light intensity and a film thickness are obtained. That is, there are obtained data regarding a variation δL of a light intensity when a film thickness is changed by about 1 nm. Then, at block 32 (second optical path passing process), light outputted from the light source unit 52 is guided to pass through the second optical path 62 via the point A2 and the point B2 (point A2→point B2), and reaches the light detection unit 53. Thereafter, at block 33 (first optical path passing process), light outputted from the light source unit 52 is guided to pass through the first optical path 61 via the point A1, the point C1 and the point B1 (point A1→point C1→point B1), and reaches the light detection unit 53. Then, at block 34 (analyzing process), intensities of the lights respectively passing through the second optical path 62 and the first optical path 61 are measured, and based on this intensity information, a thickness of a thin film formed on the wafer W is calculated.
At block 34, an intensity of the light passing through the second optical path 62 is measured at block 341. Then, an intensity of the light passing through the first optical path 61 is measured at block 342. Thereafter, at block 343 (light intensity difference calculation process), a decrease δx is calculated by comparing the light intensity information measured at block 341 with information of a light intensity measured at the time of starting the process. Then, at block 344 (correction process), correction is made by adding the decrease δx to the light intensity measured at block 342. Thereafter, at block 345 (film thickness calculation process), based on the corrected light intensity information and the reference data (variation δL), a thickness of the thin film formed on wafer W is calculated.
Herein, in accordance with the present example embodiment, as described above, since the first optical path 61 and the second optical path 62 are formed to have the same light propagation characteristics, decreases in ultraviolet intensities of the lights in the first optical path 61 and the second optical path 62 may be equivalent while the process is being performed. Therefore, by correcting the light intensity information for calculation of the film thickness obtained at block 33 based on the light intensity information for correction obtained at block 32, an influence of the aging and the degradation of an optical fiber cable can be excluded from the light intensity information for calculating the film thickness. Accordingly, it may become possible to accurately measure the thickness of the thin film formed on wafer W.
Further, in the above-described example embodiments, there have been explained a device and a method for calculating a thickness of a thin film formed on a wafer as an example. However, the technical conception of the present disclosure lies in that by correcting intensity information (information for main measurement) of light passing through a first path via a target object to be measured based on intensity information (information for correction) of light passing through a second path having the same characteristics as those of the first path and not passing the target object, the influence, which is caused by the paths, upon the intensity information for main measurement is excluded. Therefore, besides being used to measure a thickness of a thin film, the technical conception may have a wide range of applications as long as it is used to investigate structural characteristics (dimension, surface shape, material composition, or the like) of the target object by irradiating light to the target object.
The term “light propagation characteristic” used in the above description includes all kinds of characteristics that may affect light-related parameters such as intensity, wavelength, phase, polarization, and distortion of light. Therefore, the technical range of the present disclosure may not be limited to investigating a structure of a target object based on the “intensity” of light as shown in the above example embodiments but may also include investigating a structure of a target object based on other light-related parameters such as wavelength, phase, polarization, and distortion.
Further, the above example embodiments have been explained for the case of acquiring the reference data δL by using the method as shown in
Furthermore, the above example embodiments have been explained for the case that each of an optical path for main measurement that passes a target object and an optical path for correction that does not pass the target object is formed of a single path. However, the example embodiments may not be limited thereto, and each of the optical path for main measurement and the optical path for correction may be formed of multiple paths.
Moreover, the above example embodiments have been described for the case that an optical path is formed by an optical fiber cable and a mirror. However, the example embodiments may not be limited thereto, and optical paths may be formed by any member and any method as long as they can transmit light, and an optical path for main measurement and an optical path for correction have the same light propagation characteristics.
As a characteristic of an optical fiber cable in the above-described example embodiments, it is apparent that if a continuous use of the optical fiber cable is stopped temporarily and an ultraviolet intensity is measured again, an ultraviolet intensity value increases. That is, the optical fiber cable can be recovered from the aging and the degradation by stopping the continuous use thereof. Further, it is also apparent that an ultraviolet intensity value varies depending on a processing pressure or a processing gas atmosphere. Thus, an increase or a decrease of the ultraviolet intensity may be caused by various factors, and may vary from moment to moment. Therefore, when measuring a film thickness of a wafer, as described in the example embodiments, it may be effective to alternatively perform the measurement for correction and the measurement for calculation of the film thickness and perform the correction of the ultraviolet intensity sequentially.
Further, in the above-described example embodiments, a device and a method for measuring a film thickness in an etching process have been described. However, the example embodiments may not be limited thereto and may be applied to investigating a structure in various other semiconductor manufacturing processes including a film forming process such as CVD, a sputtering process, etc.
Furthermore, the above example embodiments have been described for the case that a semiconductor wafer is used as a processing target substrate on which a process is performed. However, the example embodiments may not be limited thereto. By way of non-limiting example, the embodiments may be applied to processing various kinds of substrates such as a glass substrate for a flat panel display, a flexible plastic substrate, etc.
Moreover, in the above-described embodiments, a xenon lamp configured to generate white light is used as a light source, but the embodiments may not be limited thereto. In order to investigate a finer structure more effectively, a light source configured to generate ultraviolet light of about 300 nm or less may be employed and a structure of a target object may be investigated by using only an ultraviolet ray. Besides, it may be also possible to use an electromagnetic wave having a certain wavelength.
In
From the foregoing, it will be appreciated that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the following claims.
The example embodiments provide a process monitoring device and a process monitoring method capable of investigating a wafer structure by using an optical method with higher precision and may be advantageously applied to a semiconductor manufacturing field.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2011-087179 | Apr 2011 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2012/059495 | 4/6/2012 | WO | 00 | 10/30/2013 |
