Claims
- 1. A semiconductor carrier film, comprising
a base film having insulating property; a barrier layer provided on the base film, the barrier layer being made of chrome alloy; and a wire layer provided on the barrier layer, the wire layer being made of conductive material including copper, wherein a ratio of chrome in the barrier layer is 15% to 50% by weight.
- 2. The semiconductor carrier film as set forth in claim 1, wherein:
the ratio of chrome in the barrier layer is 15% to 30% by weight.
- 3. The semiconductor carrier film as set forth in claim 1, wherein:
a thickness of the barrier layer is 10 nm to 35 nm.
- 4. The semiconductor carrier film as set forth in claim 1, wherein:
a thickness of the base film is 25 μm to 50 μm.
- 5. The semiconductor carrier film as set forth in claim 1, wherein:
the barrier layer includes zinc as a sub component; and a ratio of zinc in the barrier layer is 0.1% to 5% by weight.
- 6. The semiconductor carrier film as set forth in claim 1, wherein:
the barrier layer includes molybdenum as a sub component; and a ratio of molybdenum in the barrier layer is 1% to 10% by weight.
- 7. The semiconductor carrier film as set forth in claim 1, wherein:
the barrier layer is made of nickel-chrome alloy.
- 8. A semiconductor device, comprising
a semiconductor carrier film including (i) a base film having insulating property, (ii) a barrier layer provided on the base film, the barrier layer being made of chrome alloy, and (iii) a wire layer provided on the barrier layer, the wire layer being made of conductive material including copper; and a semiconductor element bonded to the wire layer, wherein a ratio of chrome in the barrier layer is 15% to 50% by weight.
- 9. A liquid crystal module, comprising a semiconductor device including
a semiconductor carrier film including (i) a base film having insulating property, (ii) a barrier layer provided on the base film, the barrier layer being made of chrome alloy, and (iii) a wire layer provided on the barrier layer, the wire layer being made of conductive material including copper; and a semiconductor element bonded to the wire layer, wherein a ratio of chrome in the barrier layer is 15% to 50% by weight.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2003-188854 |
Jun 2003 |
JP |
|
Parent Case Info
[0001] This nonprovisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2003/188854 filed in Japan on Jun. 30, 2003, the entire contents of which are hereby incorporated by reference.