Claims
- 1. Please cancel claims 1-34.
- 2. 35.A method for scribing a semiconductor wafer, said method comprising the steps of:
- 3. 37.The method of claim 35, wherein said sapphire substrate has a bandgap value greater than an energy value for the laser projection.
- 4. 38.The method of claim 35, wherein said sapphire substrate has a C-plane orientation.
- 5. 39.The method of claim 35, wherein said patterned laser projection is one selected from the group consisting of long lines, multiple lines, multiple parallel lines and grids.
- 6. 40.The method of claim 35, wherein said surface is a back/substrate surface of said semiconductor wafer.
- 7. 41.The method of claim 35, wherein said surface is a front/epitaxial surface of said semiconductor wafer.
- 8. 42.The method of claim 35, wherein a kerf width is less than 10 micrometers for minimizing wastage of said semiconductor wafer.
- 9. 43.The method of claim 35, wherein a kerf width is less than 20 micrometers for minimizing wastage of said semiconductor wafer.
- 10. 44.The method of claim 35, wherein a kerf width is less than 100 micrometers for minimizing wastage of said semiconductor wafer.
- 11. 45.The method of claim 35, wherein a kerf width is less than 20 micrometers and no more than 28 micrometers for minimizing wastage of the semiconductor wafer.
- 12. 46.The method of claim 35, wherein said at least one partial cut is less than 3.5 mils in depth.
- 13. 47.The method of claim 35, wherein said step of directing includes the step of generating laser light emissions capable of cutting the sapphire substrate via laser ablation.
- 14. 48.The method of claim 35, wherein said device layer comprises gallium nitride.
- 15. 49.The method of claim 35, wherein said device layer comprises gallium arsenide.
- 16. 50.The method of claim 35, wherein said device layer comprises aluminum nitride.
- 17. 51.The method of claim 35, wherein said device layer comprises indium nitride.
- 18. 52.The method of claim 35, wherein said device layer comprises silicon.
- 19. 53.The method of claim 35, wherein said device layer comprises III-V material.
- 20. 54.A method for preparing a semiconductor wafer comprising the steps of:
- 21. 55.The method of claim 54, wherein said device layer comprises gallium nitride.
- 22. 56.The method of claim 54, wherein said device layer comprises gallium arsenide.
- 23. 57.The method of claim 54, wherein said device layer comprises aluminum nitride.
- 24. 58.The method of claim 54, wherein said device layer comprises indium nitride.
- 25. 59.The method of claim 54, wherein said device layer comprises silicon.
- 26. 60.The method of claim 54, wherein said device layer comprises III-V material.
Cross Reference to Related Applications
[0001] This application is a continuation of the application, Serial No. 09/178,287, now pending, filed on October 23, 1998, entitled SEMICONDUCTOR DEVICE SEPARATION USING A PATTERNED LASER PROJECTION, herein incorporated by reference. This application is also related to co-pending U.S. Patent Application No. ______, entitled SEMICONDUCTOR DEVICE SEPARATION USING A PATTERNED LASER PROJECTION, filed __, 2002, and co-pending U.S. Patent Application No. ______, entitled SEMICONDUCTOR WAFER PROTECTION AND CLEANING FOR DEVICE SEPARATION USING LASER ABLATION, filed __, 2002.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/178,287 |
Oct 1998 |
US |
Child |
10114099 |
Apr 2002 |
US |