Semiconductor device

Abstract

In a semiconductor device having a multilayer interconnection structure, wires are formed by a damascene process, at least part of electrode pads includes a first conductive layer having a region provided for an electrical connection with an external unit. Herein, the first conductive layer is formed on a passivation film that is formed a semiconductor substrate and is indispensable for the multilayer interconnection structure.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a plan view illustrating a structure of a semiconductor device according to a first embodiment of the present invention;

FIG. 1B is a sectional view illustrating the structure of the semiconductor device according to the first embodiment of the present invention;

FIG. 2A is a plan view illustrating a structure of a semiconductor device according to a second embodiment of the present invention;

FIG. 2B is a sectional view illustrating the structure of the semiconductor device according to the second embodiment of the present invention;

FIG. 3A is a plan view illustrating a structure of a semiconductor device according to a third embodiment of the present invention;

FIG. 3B is a sectional view illustrating the structure of the semiconductor device according to the third embodiment of the present invention;

FIG. 4A is a plan view illustrating a structure of a semiconductor device according to a fourth embodiment of the present invention;

FIG. 4B is a sectional view illustrating the structure of the semiconductor device according to the fourth embodiment of the present invention; and

FIG. 5 is a sectional view illustrating a structure of an electrode pad in a conventional semiconductor device.

Claims

1. A semiconductor device having a multilayer interconnection, comprising: a semiconductor substrate,a plurality of interlayer insulating films,a plurality of wires each formed by a damascene process, anda plurality of electrode pads each provided for electrical connection with an external unit,the interlayer insulating films, wires, and electrode pads being provided on the semiconductor substrate, whereinat least part of the electrode pads has a first conductive layer formed on a passivation film over the semiconductor substrate and having a region for the electrical connection with the external unit,a second conductive layer having the plurality of wires is formed immediately below the passivation film, andat least part of the wires in the second conductive layer vertically overlaps with the first conductive layer formed on the semiconductor substrate while establishing no electrical connection with the first conductive layer.

2. The semiconductor device according to claim 1, wherein the wire in the second conductive layer, which vertically overlaps with the first conductive layer formed on the semiconductor substrate, vertically overlaps at least with a testing region of the first conductive layer.

3. The semiconductor device according to claim 2, wherein the wire in the second conductive layer, which vertically overlaps with the testing region of the first conductive layer, is directly and electrically connected to the first conductive layer.

4. The semiconductor device according to claim 3, wherein the passivation film has an opening formed at a portion vertically overlapping with the testing region of the first conductive layer, and the first conductive layer is electrically connected to the wire in the second conductive layer through the opening in the passivation film.