This application is based upon and claims the benefit of priority to Japanese Patent Application No. 2022-171969, Filed on Oct. 27, 2022, the entire contents of which are incorporated herein by reference.
The present invention is related to a semiconductor module, a method for manufacturing a semiconductor module, a semiconductor device, and a vehicle.
Some power conversion devices such as an inverter device include a semiconductor device including a circuit board on which a semiconductor element such as an Insulated Gate Bipolar Transistor (IGBT), a power Metal Oxide Semiconductor Field Effect Transistor (MOSFET), or a Free Wheeling Diode (FWD) is mounted (See, for example, JP 2003-332393 A).
In this type of semiconductor device, a conductive plate sometimes referred to as a lead frame may be used as a conductive member through which a large current flows of conductive members electrically connecting an electrode of the semiconductor element and an external terminal to each other. For example, JP 2003-332393 A describes a semiconductor device in which a source electrode of a semiconductor element mounted on an island including a drain terminal and a post including a source terminal are electrically connected to each other by the conductive plate. For example, WO 2020/071102 A describes a semiconductor device in which a circuit board on which a semiconductor element is mounted is housed in a resin case provided with an external terminal, and an electrode of the semiconductor element and a wiring pattern on the circuit board electrically connected to the external terminal of the resin case are electrically connected to each other by a lead frame. JP H08-130284 A describes some examples of a shape of the lead frame in the semiconductor device not using the resin case, and JP 7028391 B2 describes some examples of a shape of the lead frame in the semiconductor device using the resin case.
Of a manufacturing step of the semiconductor device described above, in a step of electrically connecting the electrode of the semiconductor element and the post or the wiring pattern to each other by a conductor plate plate-shaped solder is disposed on the electrode of the semiconductor element and the post or the wiring pattern, and the conductor plate is placed thereon to heat and melt the plate-shaped solder. In this step, a jig in which a region where the plate-shaped solder and the conductor plate are disposed is opened may be used. However, in such a jig, a portion of the conductor plate corresponding to a coupling portion coupling a connecting portion connected to the electrode of the semiconductor element and a connecting portion connected to the post or the wiring pattern is also opened so that the conductor plate can be detached after being connected to the electrode of the semiconductor element or the like. Thus, a position of the plate-shaped solder disposed using the jig may be shifted to a portion corresponding to the coupling portion of the conductor plate of the opening portion of the jig until the plate-shaped solder is heated and melted in a reflow furnace.
The present invention has been made in view of such a point, and an object of the present invention is to provide a method for manufacturing a semiconductor module capable of reducing bonding failure when a conductive member of a circuit board and a lead are bonded to each other using plate-shaped solder.
A semiconductor module according to one aspect of the present invention includes: a circuit board in which a semiconductor element is mounted on a wiring board; and a lead electrically connected to a conductive member in the circuit board via a bonding material, in which the lead includes a bonding portion bonded to the conductive member by the bonding material and a coupling portion extending from the bonding portion, and a contour in plan view of the bonding portion has a shape in which, at a position distant from a second end portion with a position away from the second end portion on a side opposite to a first end portion at which the coupling portion extends by a predetermined distance in an extending direction of the coupling portion as a boundary, positions of both ends in a width direction orthogonal to the extending direction of the coupling portion are displaced in directions of end portions opposite to each other, respectively, and, a dimension in the width direction changes from a first dimension to a second dimension smaller than the first dimension.
According to the present invention, a method for manufacturing a semiconductor module capable of reducing bonding failure when a conductive member of a circuit board and a lead are bonded to each other using a plate-shaped solder can be provided.
Hereinafter, an embodiment of a semiconductor device according to the present invention will be described in detail with reference to the drawings. X, Y, and Z axes in each drawing to be referred to are illustrated for the purpose of defining a plane and a direction in the illustrated semiconductor device or the like, and the X, Y, and Z axes are orthogonal to each other and form a right-handed coordinate system. In the following description, the X direction may be referred to as a left-right direction, the Y direction may be referred to as a front-rear direction, and the Z direction may be referred to as an up-down direction. A plane including the X axis and the Y axis may be referred to as an XY plane, a plane including the Y axis and the Z axis may be referred to as a YZ plane, and a plane including the Z axis and the X axis may be referred to as a ZX plane. These directions (front-rear, left-right, and up-down directions) and planes are terms used for convenience of description, and a correspondence relationship with the XYZ directions, respectively, may change depending on an attachment posture of the semiconductor device. For example, a heat dissipation surface side (cooler side) of the semiconductor device is referred to as a lower surface side, and the opposite side is referred to as an upper surface side. In the present specification, the term “in plan view” means a case where an upper surface or a lower surface (XY plane) of the semiconductor device or the like is viewed from the Z direction. An aspect ratio and a magnitude relationship between the members in each drawing are merely schematically represented, and do not necessarily coincide with a relationship in a semiconductor device or the like actually manufactured. A case in which the magnitude relationship between the members is exaggerated for convenience of description is also assumed.
The semiconductor device illustrated in the following description is applied to, for example, a power conversion device such as an inverter of an industrial or in-vehicle motor. Thus, in the following description, detailed description of the same or similar configuration, function, operation, and the like as those of the known semiconductor device will be omitted.
As illustrated in
The cooler 3 releases heat of the semiconductor module 2 to the outside, and has a rectangular parallelepiped shape as a whole. Although not particularly illustrated, the cooler 3 is configured by providing a plurality of fins on a lower surface side of a flat plate-shaped base portion and housing these fins in a water jacket. The cooler 3 is not limited thereto and can be appropriately changed.
The semiconductor module 2 includes a base 4, a circuit board 5, a case 6, leads 701 to 705, bonding wires 801 and 802, and a sealing material (not illustrated).
The base 4 is a substrate on which the circuit board 5 is mounted, and the base 4 on which the circuit board 5 is mounted is attached to a lower surface of the case 6 with the surface on which the circuit board 5 is mounted facing upward. The case 6 includes an insulating member 601 having a rectangular tubular shape (a square ring shape) whose upper surface and lower surface are opened, main terminals 602 to 604 integrated with the insulating member 601, and control terminals 605 and 606. The circuit board 5 mounted on the base 4 is housed in a hollow portion of the insulating member 601 of the case 6. The base 4 is, for example, a metal plate such as a copper plate, and conducts heat generated in the circuit board 5 to the cooler 3. The base 4 may be disposed on the upper surface of the cooler 3 via a thermal conductive material such as thermal grease or thermal compound. In the semiconductor module 2, the base 4 may be omitted, and a conductor pattern 505 (see
The circuit board 5 includes the wiring board 500 and semiconductor elements 510 and 520 mounted on an upper surface of the wiring board 500. The wiring board 500 includes an insulating substrate 501, conductor patterns 502 to 504 provided on an upper surface of the insulating substrate 501, and the conductor pattern 505 provided on a lower surface of the insulating substrate 501. The wiring board 500 may be, for example, a Direct Copper Bonding (DCB) substrate or an Active Metal Brazing (AMB) substrate.
The insulating substrate 501 is not limited to a specific substrate. The insulating substrate 501 may be, for example, a ceramic substrate made of a ceramic material such as aluminum oxide (Al2O3), aluminum nitride (AlN), silicon nitride (Si3N4), and composite material of aluminum oxide (Al2O3) and zirconium oxide (ZrO2). The insulating substrate 501 may be, for example, a substrate obtained by molding an insulating resin such as an epoxy resin or a substrate obtained by coating a surface of a flat plate-shaped metal core with the insulating resin.
The conductor patterns 502 to 504 provided on the upper surface of the insulating substrate 501 are conductive members used as wiring members in the circuit board 5, and the conductor pattern 505 provided on the lower surface of the insulating substrate 501 is a conductive member used as a heat dissipation member that conducts heat generated in the circuit board 5 to the base 4. These conductor patterns 502 to 505 are made of, for example, a metal plate such as copper or aluminum. The conductor pattern 505 provided on the lower surface of the insulating substrate 501 is bonded to the upper surface of the base 4 via a bonding material (not illustrated) such as solder. The conductor patterns 502 to 504 provided on the upper surface of the insulating substrate 501 may be referred to as conductor layers, conductor plates, or wiring patterns. The conductor pattern 505 provided on the lower surface of the insulating substrate 501 may be referred to as a dissipation layer, a dissipation plate, or a dissipation pattern.
As described above, the conductor patterns 502 to 504 provided on the upper surface of the insulating substrate 501 are the conductive members used as the wiring members in the circuit board 5. In the wiring board 500 illustrated in
In the first semiconductor element 510, a first main electrode (not illustrated) provided on a lower surface is bonded to the first conductor pattern 502 by a bonding material S1. The first conductor pattern 502 is electrically connected to the first main terminal 602 provided in the case 6 via the first lead 701. The first lead 701 is bonded to the first conductor pattern 502 by a bonding material S2 and bonded to the first main terminal 602 by a bonding material S3. A second main electrode 511 and a control electrode 512 are provided on the upper surface of the first semiconductor element 510. The second main electrode 511 is electrically connected to the second conductor pattern 503 via the second lead 702. The second lead 702 is bonded to the second main electrode 511 of the first semiconductor element 510 by a bonding material S4 and bonded to the second conductor pattern 503 by a bonding material S5. The control electrode 512 is electrically connected to the control terminal 605 provided on the case 6 by the bonding wire 801.
The second conductor pattern 503 is electrically connected to a second main terminal 603 provided in the case 6 via a third lead 703. The third lead 703 is bonded to the second conductor pattern 503 by a bonding material S6 and bonded to the second main terminal 603 by a bonding material S7.
In the semiconductor device 1 illustrated in
The third conductor pattern 504 is electrically connected to a first main electrode provided on a lower surface of second semiconductor element 520 by a bonding material. The third conductor pattern 504 is also electrically connected to the third main terminal 604 provided in the case 6 via the fifth lead 705. The fifth lead 705 is bonded to each of the third conductor pattern 504 and the third main terminal 604 by a bonding material (not illustrated).
In the present embodiment, the first semiconductor element 510 and the second semiconductor element 520 include a Reverse Conducting (RC)-IGBT element in which functions of an Insulated Gate Bipolar Transistor (IGBT) element and a Free Wheeling Diode (FWD) element are integrated.
The semiconductor element mounted on the upper surface of the wiring board 500 is not limited to a specific one. A semiconductor element as a switching element such as the IGBT or the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and a semiconductor element as a diode element such as the FWD may be mounted on the upper surface of the wiring board 500. A Reverse Blocking (RB)-IGBT or the like having a sufficient withstand voltage against a reverse bias may be used as the semiconductor element. A shape, a disposition number, a disposition location, and the like of the semiconductor element can be appropriately changed. A layout of the conductor pattern as the wiring member provided on the upper surface side of the wiring board 500 is changed according to a type, the shape, the disposition number, the disposition location, and the like of the semiconductor element to be mounted.
When the first semiconductor element 510 is the IGBT element, the second main electrode 511 on the upper surface side may be referred to as an emitter electrode, and the first main electrode on the lower surface side may be referred to as a collector electrode. When the first semiconductor element 510 is the MOSFET element, the second main electrode 511 on the upper surface side may be referred to as a source electrode, and the first main electrode on the lower surface side may be referred to as a drain electrode. The control electrode provided on the upper surface of first semiconductor element 510 may include a gate electrode and an auxiliary electrode. For example, the auxiliary electrode may be an auxiliary source electrode or an auxiliary emitter electrode electrically connected to the main electrode on the upper surface side and serving as a reference potential with respect to a gate potential. The auxiliary electrode may be a temperature sense electrode electrically connected to a temperature sense unit that may be included in the semiconductor device 1 and measuring the temperature of the semiconductor element. Such an electrode (a main electrode, a gate electrode and an auxiliary electrode) formed on the upper surface of first semiconductor element 510 may be generally referred to as an upper surface electrode.
Each of the first lead 701 to the fifth lead 705 described above is formed by bending a metal plate such as a copper plate, and may be referred to as a lead frame or a metal wiring board.
Next, the shape of the lead in the semiconductor device 1 according to the present embodiment will be described with reference to
As illustrated in
The first bonding portion 702a in the second lead 702 is a substantially rectangular parallelepiped shaped portion including an upper surface 720 and a lower surface (not illustrated) having a rectangular shape in plan view and four side surfaces 721 to 724 each connected to a respective one of sides parallel to each other of the upper surface 720 and the lower surface. One end of the coupling portion 702c is connected to the side surface 721 of the first bonding portion 702a so as to divide one side surface 721 of the four side surfaces 721 to 724 in the first bonding portion 702a into three sections of a first section 721a, a second section 721b, and a third section 721c. The first section 721a is a section in which the first bonding portion 702a and the coupling portion 702c are connected to each other and serves as a boundary therebetween. The second section 721b is a section located between the first section 721a and one side surface 722 connected to the side surface 721. The third section 721c is a section located between the first section 721a and the other side surface 724 connected to the side surface 721. The second section 721b and the third section 721c of the side surface 721 face a direction opposite to the side surface 723 opposite to the side surface 721. In the direction illustrated in
The second bonding portion 702b in the second lead 702 is a substantially rectangular parallelepiped shaped portion including an upper surface 725 and a lower surface (not illustrated) having a rectangular shape in plan view and four side surfaces 726 to 729 each connected to a respective one of sides parallel to each other of the upper surface 725 and the lower surface. The other end of the coupling portion 702c is connected to the side surface 726 of the second bonding portion 702b so as to divide one side surface 726 of the four side surfaces 726 to 729 in the second bonding portion 702b into three sections of a first section 726a, a second section 726b, and a third section 726c. The first section 726a is a section in which the second bonding portion 702b and the coupling portion 702c are connected to each other and serves as a boundary therebetween. The second section 726b is a section located between the first section 726a and one side surface 727 connected to the side surface 726. The third section 726c is a section located between the first section 726a and the other side surface 729 connected to the side surface 726. The second section 726b and the third section 726c of the side surface 726 face a direction opposite to the side surface 728 opposite to the side surface 726. In the direction illustrated in
The coupling portion 702c in the second lead 702 is a deformed portion including an upper surface 730 connected to the upper surface 720 of the first bonding portion 702a and the upper surface 725 of the second bonding portion 702b, a lower surface (not illustrated) connected to the lower surface of the first bonding portion 702a and the lower surface of the second bonding portion 702b, and side surfaces 731 to 736 connected to the upper surface 730 and the lower surface. As illustrated in
Reference is now made further to
As described above, in the second lead 702 of the semiconductor device 1 (semiconductor module 2) of the present embodiment, the positions of both ends in the width direction of the coupling portion 702c orthogonal to the extending direction are displaced in the directions of end portions opposite to each other, respectively, and thus, of the contour in plan view, a contour indicating the second bonding portion 702b and a portion of the coupling portion 702c extending from the second bonding portion 702b changes from the first dimension (W1) to the second dimension (W2) having a dimension in the width direction smaller than the first dimension at a position (for example, a position Y1 in the Y direction in
Although detailed description is omitted, a contour indicating the first bonding portion 702a and a portion of the coupling portion 702c extending from the first bonding portion 702a in the contour of the second lead 702 has the same shape as the contour indicating the second bonding portion 702b and the portion of the coupling portion 702c extending from the second bonding portion 702b described above with reference to
Before describing advantages (operational effects) of using the first lead 701 to the fifth lead 705 having the contour in plan view described above, first, a typical example of a method for manufacturing the semiconductor module 2 according to the present embodiment will be described with reference to
In the manufacturing of the semiconductor module 2, first, the circuit board 5 and the case 6 are attached to the base 4 (step S101). Step S101 may be performed by a known procedure.
Next, a jig for lead bonding is attached to the base 4 to which the circuit board 5 and the case 6 are attached (step S102). A configuration example of the jig to be attached in step S102 will be described later with reference to
Next, in a state where the jig is attached, the plate-shaped solder used for bonding the lead is disposed (step S103), and the lead is subsequently disposed (step S104). Thereafter, the plate-shaped solder is heated and melted, and reflow is performed to bond the bonding portion of each lead to a conductive member serving as a predetermined bonding target (step S105). By performing the reflow, for example, in the second lead 702, the first bonding portion 702a is bonded to the second main electrode 511 of the first semiconductor element 510, and the second bonding portion 702b is bonded to the second conductor pattern 503. Steps S103 and S104 may be referred to as a disposing step of disposing a plate-shaped bonding material and further disposing the lead. Step S105 may be referred to as a bonding step of bonding the conductive member (the electrode of the semiconductor element, the conductor pattern of the wiring board, and the like) in the circuit board 5 and the lead to each other.
After the reflow, the jig for lead bonding is detached from the base 4 to which the circuit board 5 and the case 6 are attached (step S106), wire bonding (step S107) and sealing (step S108) are performed to obtain the semiconductor module 2 described above. In step S107, the control electrode 512 on the upper surface of first semiconductor element 510 and the control terminal 605 of the case 6 are connected to each other by the bonding wire 801, and the control electrode 522 on the upper surface of the second semiconductor element 520 and the control terminal 606 of the case 6 are connected to each other by the bonding wire 802. In step S108, the hollow portion of the case 6 is filled with a sealing material such as an insulating resin and the sealing material is cured to seal the circuit board 5, the leads 701 to 705, the bonding wires 801 and 802, and the like housed in the case 6. Step S106 may be referred to as a detaching step of detaching the jig from the circuit board. Step S107 may be referred to as a wire bonding step or a bonding step. Step S108 may be referred to as a sealing step.
When the semiconductor module 2 (semiconductor device 1) in which the base 4 is omitted is manufactured, for example, the circuit board 5 and the case 6 are attached to the upper surface of the cooler 3 instead of the base 4.
In the method for manufacturing the semiconductor module 2 described above with reference to
The first plate-shaped solder 1101 having a rectangular shape in plan view corresponding to the first bonding portion 702a of the second lead 702 is disposed in the first partial opening 1002. At this time, the first partial opening 1002 has a rectangular shape in plan view corresponding to the first plate-shaped solder 1101, and wall surfaces 1002b to 1002d represented by three sides, respectively, excluding a side communicating with the third partial opening 1004 in plan view (a side on the negative side in the Y direction of a pair of sides extending in the X direction) face side surfaces 1101b to 1101d, respectively, of the first plate-shaped solder 1101. The first partial opening 1002 includes a wall surface 1002a facing a portion on one end side and a wall surface 1002e facing a portion on the other end side of a side representing the side surface 1101a in plan view of the side surface 1101a facing the third partial opening 1004 side in the first plate-shaped solder 1101 disposed in the first partial opening 1002. That is, the first partial opening 1002 in the jig 10 according to the present embodiment includes two wall surfaces 1002a and 1002e that are separated by a boundary with the third partial opening 1004 in plan view and face the side surface 1101a facing the third partial opening 1004 side in the first plate-shaped solder 1101.
The second plate-shaped solder 1102 having a rectangular shape in plan view corresponding to the second bonding portion 702b of the second lead 702 is disposed in the second partial opening 1003. At this time, the second partial opening 1003 has a rectangular shape in plan view corresponding to the second plate-shaped solder 1102, and wall surfaces 1003b to 1003d represented by three sides, respectively, excluding a side communicating with the third partial opening 1004 in plan view (a side on the positive side in the Y direction of the pair of sides extending in the X direction) face side surfaces 1102b to 1102d, respectively, of the second plate-shaped solder 1102. The second partial opening 1003 includes a wall surface 1003a facing a portion on one end side and a wall surface 1003e facing a portion on the other end side of a side representing the side surface 1102a in plan view of the side surface 1102a facing the third partial opening 1004 side in the second plate-shaped solder 1102 disposed in the second partial opening 1003. That is, the second partial opening 1003 in the jig 10 according to the present embodiment includes two wall surfaces 1003a and 1003e that are separated by a boundary with the third partial opening 1004 in plan view and face the side surface 1102a facing the third partial opening 1004 side in the second plate-shaped solder 1102.
As illustrated in
Advantages of manufacturing the semiconductor module 2 by using such a jig 10 will be described below with reference to
In the jig 12 for lead bonding illustrated in
On the other hand, one opening 1001 in the jig 10 for lead bonding used in the present embodiment is formed such that the contour in plan view corresponds to the contour of the lead disposed in the opening 1001 and includes the contour of the lead. For example, the opening 1001 in which the lead 706 is disposed in the jig 10 illustrated in
In the jig 10 for lead bonding used in the present embodiment, the contour in plan view of the opening in which the lead is disposed is made to correspond to the shape in plan view of the lead described above with reference to
In the jig 10 for lead bonding used in the present exemplary embodiment, a boundary between the third partial opening 1004 and the second partial opening 1003 in which the second plate-shaped solder 1102 is disposed is also configured similarly to the boundary between the third partial opening 1004 and the first partial opening 1002 in which the first plate-shaped solder 1101 is disposed. Thus, even when an external force in the direction toward the third partial opening 1004 is applied to the second plate-shaped solder 1102 disposed in the second partial opening 1003, the wall surfaces 1003a and 1003e of the second partial opening 1003 can prevent the movement in the direction of the third partial opening 1004, and a movable range of the second plate-shaped solder 1102 disposed in the second partial opening 1003 is restricted.
As described above, by manufacturing the semiconductor module 2 by combining the lead having the contour in plan view described above with reference to
Further, the wall surface of the third partial opening 1004 in one opening 1001 of the jig 10 of the present embodiment is formed so as not to overlap the coupling portion (for example, the coupling portion 702c of the second lead 702 in
The configuration of the jig 10 described above with reference to
In the contour of the lead 708 illustrated in
Here, a position in the Y direction of the side L6 of the end portion on the opposite side to a side (that is, the boundary between the bonding portion 708b and the coupling portion 708c indicated by a two-dot chain line connecting the point P21 and the point P30) connected to the coupling portion 708c in the contour of the bonding portion 708b is defined as Y0. Each of the pair of notches is provided on a respective one of sides (a side connecting the point P21 and the point P25 to each other and a side connecting the point P30 and the point P26 to each other) serving as end portions in the width direction (X direction) in the contour of the bonding portion 708b. The notch of the side connecting the point P21 and the point P25 to each other is a concave site represented by arc-shaped trajectories L3 and L4 displaced in a direction of a straight line connecting the point P30 and the point P26 to each other in a section from the point P22 to the point P24 set between a straight line connecting the point P21 and the point P25 to each other. The notch of the side connecting the point P30 and the point P26 to each other is a concave portion represented by arc-shaped trajectories L8 and L9 displaced in a direction of a straight line connecting the point P21 and the point P25 to each other in a section from the point P27 to the point P29 set between a straight line connecting the point P30 and the point P26 to each other.
In the contour of the bonding portion 708b illustrated in
For example, as illustrated in
When the contour of the bonding portion 708b of the lead 708 is formed into the shape having the notch described above, as illustrated in
In the combination of the lead 708 having the pair of notches illustrated in
A depth W5 (see
In the contour of the lead 708 illustrated in
Here, a position in the Y direction of the side L3 of the end portion on the opposite side to a side (that is, the boundary between the bonding portion 708b and the coupling portion 708c indicated by a two-dot chain line connecting the point P41 and the point P44) connected to the coupling portion 708c in the contour of the bonding portion 708b is defined as Y0. The contour of the bonding portion 708b is assumed to be an isosceles trapezoid with a boundary between the bonding portion 708b and the coupling portion 708c as an upper base and a side L3 opposite to the boundary as a lower base. In this case, the contour of the bonding portion 708b has a tapered shape in which a width at a position in the Y direction away from the side L3 serving as the lower base by a predetermined distance in the extending direction of the coupling portion 708c is shortened in proportion to a distance from the side L3. That is, the contour of the bonding portion 708b illustrated in
In the jig 10 used for bonding the lead 708 including the bonding portion 708b having the isosceles trapezoidal shape in plan view illustrated in
The angle of the oblique side when the contour of the bonding portion 708b of the lead 708 is formed into the isosceles trapezoid is not limited to a specific angle.
In the contour of the lead 708 illustrated in
The jig 10 used for bonding the lead 708 including the bonding portion 708b represented by the contour illustrated in
Furthermore, as illustrated in
In the modification described above with reference to
The modifications described above with reference to
Furthermore, the method for manufacturing the semiconductor module 2 according to the present embodiment may be a method using the jig 10 described above, but not limited to the procedure described above with reference to
As described above, the semiconductor device 1 including the semiconductor module 2 of the present embodiment can be applied to the power conversion device such as the inverter of the in-vehicle motor. A vehicle to which the semiconductor device 1 of the present invention is applied will be described with reference to
The vehicle 1501 includes a drive unit 1503 that applies power to the wheels 1502 and a control device 1504 that controls the drive unit 1503. The drive unit 1503 may include, for example, at least one of an engine, the motor, and a hybrid of the engine and the motor.
The control device 1504 performs control (for example, power control) of the drive unit 1503 described above. The control device 1504 includes the semiconductor device 1 described above. The semiconductor device 1 may be configured to perform power control on the drive unit 1503.
By manufacturing the semiconductor module 2 of the semiconductor device 1 used for this type of vehicle 1501 by using the jig 10 described above, bonding failure between the lead and the bonding target, decrease in insulation properties, and the like can be prevented, and a manufacturing yield of the semiconductor module 2 can be improved. Thus, for example, the manufacturing cost of the semiconductor device 1 used for the vehicle 1501 can be reduced.
The vehicle to which the above-described semiconductor device 1 (semiconductor module 2) can be applied is not limited to the four-wheeled vehicle illustrated in
In the above embodiment, the circuit board 5 (wiring board 500) and the semiconductor elements 510 and 520 are formed in the rectangular shape or the square shape in plan view, but the present invention is not limited to this configuration. These configurations may be formed in a polygonal shape other than the above.
The present embodiment and the modifications have been described, but as another embodiment, the above-described embodiment and the modifications may be wholly or partially combined.
The present embodiment is not limited to the above-described embodiment and modifications, and various changes, substitutions, and modifications may be made without departing from the spirit of the technical idea. When the technical idea can be realized in another manner by the progress of the technology or another derived technology, the technology may be implemented by using the manner. Thus, the claims cover all implementations that may be included within the scope of the technical idea.
The feature points in the above exemplary embodiments will be described below.
A semiconductor module according to the above embodiment includes: a circuit board in which a semiconductor element is mounted on a wiring board; and a lead electrically connected to a conductive member in the circuit board via a bonding material, in which the lead includes a bonding portion bonded to the conductive member by the bonding material and a coupling portion extending from the bonding portion, and a contour in plan view of the bonding portion has a shape in which at a position distant from a second end portion with a position away from the second end portion on a side opposite to a first end portion at which the coupling portion extends by a predetermined distance in an extending direction of the coupling portion as a boundary, positions of both ends in a width direction orthogonal to the extending direction of the coupling portion are displaced in directions of end portions opposite to each other, respectively, and, a dimension in the width direction changes from a first dimension to a second dimension smaller than the first dimension.
In the semiconductor module according to the above embodiment, the bonding portion of the lead has a rectangular shape in which the dimension in the width direction in plan view is larger than a dimension of the coupling portion in the width direction, and the contour in plan view of the bonding portion includes a side that changes from an end portion in the width direction to an end portion of the coupling portion in the width direction.
In the semiconductor module according to the above embodiment, the bonding portion of the lead includes groove portions that change in directions of end portions opposite to each other at the end portions, respectively, in the width direction in the contour in plan view.
In the semiconductor module according to the above embodiment, the bonding portion of the lead includes a portion whose contour in plan view is tapered as approaching the coupling portion.
In the semiconductor module according to the above embodiment, the conductive member of the circuit board includes an electrode of the semiconductor element and a conductor pattern of the wiring board, and the lead includes a first bonding portion bonded to the electrode of the semiconductor element by a first bonding material, a second bonding portion bonded to the conductor pattern of the wiring board by a second bonding material, and the coupling portion coupling the first bonding portion and the second bonding portion to each other.
A method for manufacturing a semiconductor module according to the above embodiment includes a connecting step of electrically connecting a conductive member and a lead in a circuit board in which a semiconductor element is mounted on a wiring board to each other via a bonding material, in which the connecting step includes: an installing step of installing, on the circuit board, a jig in which an opening is formed, the opening including a partial opening corresponding to a bonding portion bonded to the conductive member by the bonding material in the lead and a partial opening corresponding to a coupling portion extending from the bonding portion; a disposing step of disposing a plate-shaped bonding material in the partial opening corresponding to the bonding portion in the installed jig, and further disposing the lead; a bonding step of bonding the conductive member and the bonding portion of the lead to each other by heating and melting the plate-shaped bonding material; and a detaching step of detaching the jig from the circuit board, in the lead, a contour in plan view of the bonding portion has a shape in which at a position distant from a second end portion with a position away from the second end portion on a side opposite to a first end portion at which the coupling portion extends by a predetermined distance in an extending direction of the coupling portion as a boundary, positions of both ends in a width direction orthogonal to the extending direction of the coupling portion are displaced in directions of end portions opposite to each other, respectively, and, a dimension in the width direction changes from a first dimension to a second dimension smaller than the first dimension, and in the partial opening corresponding to the bonding portion in the jig, a contour in plan view has a shape in which a contour of the lead including the bonding portion and the coupling portion are included, and a portion that changes along a trajectory of a portion whose dimension in the width direction changes from the first dimension to the second dimension.
A semiconductor device according to the above embodiment includes the above-described semiconductor module; and a cooler disposed on a surface opposite to a surface on which the semiconductor element of the circuit board of the semiconductor module is mounted.
The vehicle according to the above embodiment includes the above-described semiconductor module or the semiconductor device.
As described above, the present invention has an effect of being capable of reducing bonding failure and decrease in insulation properties when a conductive member of a circuit board and a lead are bonded to each other using a plate-shaped bonding material such as plate-shaped solder, and is particularly useful for a semiconductor module for industrial or electrical equipment, a semiconductor device, and a vehicle.
Number | Date | Country | Kind |
---|---|---|---|
2022-171969 | Oct 2022 | JP | national |