This Utility Patent Application claims priority to German Patent Application No. DE 10 2007 015 284.3 filed on Mar. 29, 2007, which is incorporated herein by reference.
The invention relates to a test device for semiconductor devices and to a method for testing semiconductor devices.
Semiconductor devices, e.g., corresponding, integrated (e.g., analog or digital and/or mixed-signal) circuits, semiconductor memory devices such as, for instance, functional memory devices (PLAs, PALs, etc.) and table memory devices (e.g., ROMs or RAMs, in particular SRAMs and DRAMs), etc. are subject to comprehensive tests, e.g., in the semi-finished and/or finished state, at a plurality of test stations.
For testing the semiconductor devices, a corresponding semiconductor device test device may be provided at the respective test station which generates the test signals required for testing the semiconductor devices.
For instance, at a first test station, the signals required for testing the semiconductor devices that are still available on the wafer may, for instance, be generated by a test device that is connected with a corresponding semiconductor device test card (“probe card”), and may be input in the respective contact fields of the semiconductor devices by using corresponding needle-shaped connections (“contact needles”) provided at the test card.
The signals output by the semiconductor devices at corresponding contact fields in reaction to the input test signals are tapped by corresponding, needle-shaped connections (“contact needles” or “test needles”) of the probe card, and (e.g., via a corresponding signal line that connects the probe card with the test device) transmitted to the test device where an evaluation of the corresponding signals can take place.
After the sawing apart of the wafer, the devices, that are then available individually, can each be loaded individually in carriers (i.e. a corresponding package) and be transported further to a further test station.
At the further test station, the carriers are inserted in corresponding adapters or sockets, that are connected with a (further) test device —, and then the device that is available in the respective carrier is subject to corresponding (further) test methods.
For testing the semiconductor devices available in the carriers, the corresponding test signals output by the test device are transmitted to the corresponding contact fields of the respective semiconductor device via the adapter and the carrier (or corresponding connections of the carrier, respectively).
The signals output by the semiconductor devices at corresponding contact fields in reaction to the input test signals are tapped by corresponding carrier connections and transmitted, via the adapter (and a corresponding signal line connecting the adapter with the test device), to the test device where an evaluation of the corresponding signals can take place.
In a correspondingly similar manner, the semiconductor devices may, for instance, also be tested after their final incorporation in corresponding device packages (e.g., corresponding plug or surface-mountable packages), and/or after the incorporation of the packages, provided with corresponding semiconductor devices, in corresponding electronic modules, etc.
Conventional test bodies, e.g., a contact needle, perform a linear scratching movement on the contact field and thus scratch themselves into the contact field material so as to ensure a good contact. It is a disadvantage that the following effects may occur in so doing:
a) The contact resistance depends i.a. on the depth of penetration, the scratching length, a contamination of the needle (and partially of the contact field), and the contact pressure. In a typical test process, the needle field and the contact field are driven over each other (e.g., in that a chuck drives a wafer fastened thereon on the contact field) and are, after the contacting of the needles on the contact field, continued to be approached, frequently approx. 20 μm to 100 μm), so that the needle can dig into the contact field (“overdrive”). A good, since low, contact resistance can then be put into practice only at high contact pressure, long scratching length, and high depth of penetration with a clean needle.
b) The scratching length depends on the contact pressure and the needle cinematic during the overdrive.
c) Due to a non-ideal planarity of the needle field, some needles contact the contact field earlier than other ones and thus produce a longer scratch since they experience more overdrive.
d) By the scratching process, the needles take up contact field material that collects at the needle tip and ‘adheres’ to it. This may result in a self-reinforcement: the contamination causes a higher transition resistance which in turn effects a higher voltage drop at the needle, which causes more heat, so that even more contact field material ‘combusts’ or ‘adheres’, which causes an even higher transition resistance, etc.
e) The contact pressure is a function of the overdrive. With most probe cards, this relation is linear: much overdrive generates a high contact pressure.
By these effects, the contact becomes less defined and may thus falsify the test result.
For these and other reasons, there is a need for the present invention.
The accompanying drawings are included to provide a further understanding of embodiments and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and together with the description serve to explain principles of embodiments. Other embodiments and many of the intended advantages of embodiments will be readily appreciated as they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate similar parts.
In the following Detailed Description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology, such as “top,” “bottom,” “front,” “back,” “leading,” “trailing,” etc., is used with reference to the orientation of the Figure(s) being described. Because components of embodiments can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
It is to be understood that the features of the various exemplary embodiments described herein may be combined with each other, unless specifically noted otherwise.
One or more embodiments provide a possibility of ensuring a defined contact between a test body and a contact field during a semiconductor test, in one embodiment with the edge conditions: low contact resistance, small impression, low depth of penetration, self purification of the test body, and/or overdrive independence of the contact pressure.
In one embodiment, there is used a test device for semiconductor devices, in one embodiment a probe card, including at least one contact test body for contacting a semiconductor device (e.g., a wafer or an individualized device). The contact test body includes a drill bit, and the test device is adapted to rotate the drill bit, at least after getting into contact with the semiconductor device, for penetrating into the semiconductor device.
In one embodiment, the drill bit is provided with at least one cutting edge.
In one embodiment, the drill bit is connected with at least one torsion spring that generates a rotation about the shift direction on expansion in a shift direction (e.g., z-direction) of the contact test body.
In one embodiment, the torsion spring includes two carrier elements that are connected by two helically arranged struts.
In one embodiment, the drill bit is connected with at least one spring with a non-proportional spring characteristic such that its spring constant, after attaining a predetermined shift path of the contact test body, decreases significantly for a further shift path.
In one embodiment, the spring constant of the spring with a non-proportional spring characteristic drops substantially to Zero after attaining the predetermined shift path.
In one embodiment, the contact test body is a plug gauge which is mounted in a guide of the test device for linear shifting and which is designed such that, on shifting in the guide, the plug gauge is, at least over a predetermined shift path in longitudinal direction, forced to make a rotation about its longitudinal axis. In one embodiment, this plug gauge has a longitudinal groove in its circumference which has a helical design at least partially about the longitudinal direction, and which is mounted in the guide by balls running in the longitudinal groove.
In one embodiment, there is used a method for testing semiconductor devices by using at least one contact test body of a test device for contacting a contact field of a semiconductor device with increasing contact pressure, wherein the method includes at least the following step: rotating the contact test body on the contact field, wherein the contact test body includes a drill bit.
In one embodiment, the drill bit is equipped with at least one cutting edge.
In one embodiment, the rotating of the contact test body is caused by a torsion spring which is compressed by a contact pressure of the contact test body, and which converts the compression at least partially in a rotation. In one embodiment, the torsion spring includes two carrier elements that are connected by helically arranged struts.
In one embodiment, the drill bit is connected with at least one spring with non-proportional spring characteristic, wherein the spring is switched to a lower spring constant after achieving a predetermined contact pressure. In one embodiment, after the switching of the spring with non-proportional spring characteristic to a lower spring constant, a further shifting of the contact test body is performed with a substantially constant force.
In one embodiment, the contact test body is a plug gauge that is mounted in a guide of the test device for linear shifting, wherein, with a shifting in the guide, the plug gauge is, at least over a predetermined shift path in longitudinal direction, forced to rotate about its longitudinal axis. In one embodiment, the plug gauge includes a longitudinal groove in its circumference which has a helical design at least partially about the longitudinal direction, and which is mounted in the guide by balls running the longitudinal groove.
The semiconductor devices to be tested which are still available on the wafer 8 (e.g., of silicon or another suitable semiconductor material such as GaAs) may, for instance, be integrated (analog, digital, and/or mixed-signal) circuits or single semiconductors, and/or semiconductor memory devices such as, for instance, functional memory devices (PLAs, PALs, etc.), or table memory devices (e.g., ROMs or RAMS), in one embodiment SRAMs or DRAMs, e.g., semiconductor devices using a clock frequency higher than 500 MHz, in one embodiment higher than 1 GHz (here e.g., DRAMs (Dynamic Random Access Memories or dynamic read-write memories) with double data rate (DDR-DRAMs=Double Data Rate-DRAMs)). The invention is, however, not restricted to a particular kind of semiconductors.
The test signals required for testing the semiconductor devices that are still available on the wafer 8 are transmitted by a test device 3 (here: a digital ATE test device) via one or a plurality of signal lines (“driver channels” 6a, 6b, 6c) to a semiconductor device test card or probe card 1 and, via contact needles 5a, 5b, 5c, 5d, 5e provided at the probe card, to contact fields (“pads”) provided on the semiconductor devices.
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The signals output in reaction to the input test signals at semiconductor device connections or contact fields are, ly inversely as described above, tapped by contact needles 5a, 5b, 5c, 5d, 5e of the probe card 1 and supplied, via one or a plurality of signal lines (“comparator channels” 7a, 7b, 7c) to the test device 3 where an evaluation of the signals can then take place. The driver channels and comparator channels may also be comprehended in joint input/output channels.
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For the testing of the device, the semiconductor device or the wafer is approached such to the probe card 10 with the test needle 13 in z-direction, e.g., by using moving the chuck holding the wafer, that the test needle tip 14 contacts the contact field 12. Even after the contacting, the approaching of the test card 10 and the contact field 12 or semiconductor device, respectively, is continued (“overdrive”). In so doing, the test body 11 is shifted relatively against the remaining test card 12 in z-direction, so that the spring element 15 is compressed, which thus generates a contact pressure between the test body 11 or the test needle 13, respectively, and the contact field 12. As the approaching is continued, the contact pressure will continue to increase. At the same time, the probe card 10 and the semiconductor device and thus the contact field 12 are shifted laterally relatively to each other along the y-direction. Thus, the test needle tip 14 generates a typical scratch trace on the contact field 12 with increasing contact pressure across the shift path y.
After contacting the contact field 12, the test body 34 is first of all continuously pressed on the contact field 12 with increasing contact pressure (“overdrive”). Thus, the torsion spring element 27 is first of all compressed and thus applies a rotation to the drill bit 18 that consequently drills into the contact field 12. After reaching the stopper of the torsion spring element 27, the rotating movement of the drill bit 18 is stopped. Furthermore, the torsion spring 27 behaves in z-direction like a substantially rigid element; the contact pressure is thus determined substantially by the clicker spring 31. On further shifting or further increased contact pressure, respectively, the switching value of the clicker spring 31 is attained, so that no more substantial additional load is transmitted to the drill bit 18 from then on. Thus, it is possible to adjust a maximum contact pressure so as to reproducibly adjust, for instance, the impression of the drill bit 18 in the contact field 12. The switching value (“click point”) of the clicker spring 31 may also be adjusted such that it releases prior to the abutment of the torsion spring. The test body 34 is thus capable of contacting the contact field 12 in a defined manner and reliably by largely avoiding damages.
The restriction of the rotating/drilling movement enables it to be distinctly below the chip length of the contact field material. Moreover, contamination or chips adhering to the plug gauge 35 may be stripped off in the guide. By turning back during the contacting, a further ‘stripping off’ of the contact field material is provided for.
Of course, the invention is not restricted to the above embodiments, but may, for instance, include different modifications and combinations.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and/or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and the equivalents thereof.
Number | Date | Country | Kind |
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10 2007 015 284.3 | Mar 2007 | DE | national |