Claims
- 1. A nanoporous dielectric film on a substrate prepared by a process comprising:
(a) combining at least one multi-functional precursor with at least one tetrafunctional precursor in a reaction mixture to form a nanoporous film precursor, (b) recovering the nanoporous film precursor of (a) from said reaction mixture and depositing the same onto a suitable substrate, and (c) gelling said deposited film to form a nanoporous dielectric coating on said substrate;
wherein said multifunctional precursor has a number of functional leaving groups ranging from 1 to 3.
- 2. The nanoporous dielectric film of claim 1 that is prepared by a process wherein the multi-functional precursor is selected from the group consisting of mono-, di- and trifunctional alkoxysilanes, mono-, di- and tri-functional halosilanes and combinations thereof.
- 3. The nanoporous dielectric film of claim 1 that is prepared by a process wherein the multi-functional precursor is an alkoxysilane having the formula
- 4. The nanoporous dielectric film of claim 1 that is prepared by a process wherein said tetrafunctional precursor is an alkoxysilane having the formula of
- 5. The nanoporous dielectric film of claim 1 that is prepared by a process wherein said reaction mixture further comprises water and an organic solvent.
- 6. The nanoporous dielectric film of claim 1 that is prepared by a process wherein said tetrafunctional precursor is selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetraacetoxysilane, tetrachlorosilane and combinations thereof.
- 7. The nanoporous dielectric film of claim 1 that is prepared by a process wherein said multi-functional precursor is selected from the group consisting of methoxysilane, ethoxysilane, dimethoxysilane, diethoxysilane, trimethoxysilane, triethoxysilane, dichlorosilane, trichlorosilane, and combinations thereof.
- 8. The nanoporous dielectric film of claim 1 that is prepared by a process wherein said tetrafunctional precursor is replaced by a hydrogen silsesquioxane compound.
- 9. The nanoporous dielectric film of claim 1 that is prepared by a process wherein said reaction is conducted at a temperature ranging from about 0 to about 120° C.
- 10. The nanoporous dielectric film of claim 9 that is prepared by a process further comprising cooling the reaction mixture and diluting the reaction mixture with alcohol to facilitate recovery of the nanoporous film precursor.
- 11. The nanoporous dielectric film of claim 1 that is prepared by a process further comprising treating the film with a surface modification agent effective to render the film hydrophobic.
- 12. The nanoporous dielectric film of claim 11 that is prepared by a process wherein the surface modification agent is applied in a solution that comprises a ketone solvent.
- 13. The nanoporous dielectric film of claim 12 that is prepared by a process wherein the surface modification agent solution comprises a component selected from the group consisting of methyltriacetoxysilane, 3-pentanone and combinations thereof.
- 14. The nanoporous dielectric film of claim 1 that is prepared by a process that further comprises the additional steps of coating the formed nanoporous dielectric film with at least one additional layer comprising a silicon-based polymer precursor.
- 15. The nanoporous dielectric film of claim 14 that is prepared by a process where the silicon-based polymer precursor is selected from the group consisting of, an oxygen plasma resistant siloxane, a low organic content siloxane and a high organic content siloxane.
- 16. The nanoporous dielectric film of claim 11 that further comprises the additional steps of coating the formed nanoporous dielectric film with at least one additional layer comprising a silicon-based polymer precursor.
- 17. The nanoporous dielectric film of claim 1 that is prepared by a process wherein the recovered nanoporous film precursor is deposited onto said substrate by a method selected from the group consisting of spin deposition, dip-coating, spray deposition and combinations thereof.
- 18. The nanoporous dielectric film of claim 1 that is prepared by a process further comprising heating the coated substrate of step (c) to remove residual reactants or solvents.
- 19. An integrated circuit comprising at least one nanoporous dielectric coating according to claim 1.
- 20. A process for forming a nanoporous dielectric film on a substrate which comprises the steps of:
(a) combining at least one multi-functional precursor with at least one tetrafunctional precursor in a reaction mixture to form a nanoporous film precursor, (b) recovering the nanoporous film precursor of (a) from said reaction mixture and depositing the same onto a suitable substrate, and (c) gelling said deposited film to form a nanoporous dielectric coating on said substrate;
wherein said multifunctional precursor has a number of functional leaving groups ranging from 1 to 3.
- 21. The process of claim 20 wherein the multi-functional precursor is selected from the group consisting of mono-, di- and tri-functional alkoxysilanes, mono-, di- and tri-functional halosilanes and combinations thereof.
- 22. The process of claim 20 wherein the multi-functional precursor is an alkoxysilane having the formula
- 23. The process of claim 20 wherein said tetrafunctional precursor is an alkoxysilane having the formula of
- 24. The process of claim 20 wherein said reaction mixture further comprises water and an organic solvent.
- 25. A nanoporous dielectric film on a substrate prepared by a process comprising:
(a) depositing a suitable spin-on-glass composition onto a substrate, (b) gelling said deposited film to form a nanoporous dielectric film on said substrate; (c) treating the film with a surface modification agent effective to render the film hydrophobic (d) coating the formed nanoporous dielectric film of step (c) with at least one additional layer comprising a silicon-based polymer precursor; and (e) curing the coated nanoporous dielectric film.
- 26. The surface protected nanoporous silica dielectric film of claim 25 that exhibits Si—H bond absorbance at 2150 cm−1 as measured by Fourier transform infrared spectroscopy.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of provisional application serial number 60/098,068, filed on Aug. 27, 1998, the contents of which is incorporated herein by reference in its entirety.
Provisional Applications (1)
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Number |
Date |
Country |
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60098068 |
Aug 1998 |
US |