Claims
- 1. A method of forming a single crystalline aluminum nitride film, comprising nitriding a single crystalline α-Al2O3 substrate to form an aluminum oxynitride layer and an aluminum nitride film on the aluminum oxynitride layer.
- 2. The method of claim 1, wherein the single crystalline α-Al2O3 substrate is nitrided by heating in the presence of carbon, nitrogen and carbon monoxide.
- 3. A single crystalline aluminum nitride film which is obtainable by the method of claim 1 or 2.
Priority Claims (1)
Number |
Date |
Country |
Kind |
NO. 2002-070229 |
Mar 2002 |
JP |
|
Parent Case Info
[0001] This application is a divisional of U.S. Ser. No. 10/247,539, filed Sep. 20, 2002, the entire contents of which are herein incorporated by reference and for which priority is claimed under 35 U.S.C. § 120; and this application claims priority under 35 U.S.C. § 119(a) on Patent Application No. JP 2002-070229 filed in Japan on Mar. 14, 2002, the contents of which are herein incorporated by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
10247539 |
Sep 2002 |
US |
Child |
10809398 |
Mar 2004 |
US |