Claims
- 1. A spherical shaped integrated circuit device comprising:
- a spherical substrate;
- an integrated circuit formed on the substrate, the integrated circuit including at least one conductive layer;
- wherein a portion of the conductive layer wraps around the spherical substrate to form an inductor.
- 2. The device of claim 1 wherein the portion of the conductive layer is used to create a transformer.
- 3. The device of claim 2 wherein the transformer is part of a power circuit.
- 4. The device of claim 1 wherein the portion of the conductive layer is used as an antenna.
BACKGROUND OF THE INVENTION
This is a continuation-in-part of application Ser. No. 08/858,004, filed May 16, 1997, which claims priority from provisional application Ser. No. 60/032,340, filed Dec. 4, 1996, now abandoned.
US Referenced Citations (41)
Foreign Referenced Citations (3)
Number |
Date |
Country |
1084-021082 |
Jan 1984 |
JPX |
1093-284499 |
Oct 1993 |
JPX |
6-302799 |
Nov 1994 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Nakata, Gravity-Dependent Silicon Crystal Growth Using a Laser Heating System in drop Shaft, Sep. 1, 1994, pp. L1202-L1204. |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
858004 |
May 1997 |
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