Patent Application
20130068614
The present invention is generally related to a sputter deposition apparatus, and more particularly to the technical field of forming a SiO2 thin film by sputtering a Si target in O2 gas ambience.
SiO2 thin films are used in protective films for channel layers of thin film transistors (TFTs) and barrier films for float glass. Recently, as a method for forming a SiO2 thin film on an object to be film-deposited which becomes a large surface area, reactive sputtering is generally carried out by sputtering a Si target while chemically reacting it in an O2 gas atmosphere.
The sputter deposition apparatus 110 includes a vacuum chamber 111 and a plurality of sputter units 1201 to 1204. The sputter units 1201 to 1204 have the same structure. The following explanation uses the sputter unit associated with reference numeral 1201 as a representative example. The sputter unit 1201 includes a target 1211, a backing plate 1221, and a magnet device 1261.
Here, the target 1211 is Si, and is formed into a flat planar shape that is smaller than the surface of the backing plate 1221. The entire outer periphery of the target 1211 is positioned on the inside of the outer periphery of the surface of the backing plate 1221, and the target 1211 is stacked upon and affixed to the surface of the backing plate 1221 in a manner such that the peripheral edge of the surface of the backing plate 1221 is exposed from the outer periphery of the target 1211.
The magnet device 1261 is disposed on the rear surface side of the backing plate 1221. The magnet device 1261 includes a center magnet 127b1 disposed linearly on a magnet fixing plate 127c1 that is parallel to the backing plate 1221, and an outer peripheral magnet 127a1 which surrounds the center magnet 127b1 in a ring shape at a predetermined distance from the peripheral edge of the center magnet 127b1. The outer peripheral magnet 127a1 and the center magnet 127b1 are respectively disposed in a manner such that their magnetic poles of difference polarities face toward the rear surface of the target 121
A moving device 129 is disposed on the underside of the magnet device 1261; and the magnet device 1261 is attached to the moving device 129. The moving device 129 is configured to move the magnetic device 1261 in a direction parallel to the rear surface of the target 1211.
The overall structure of the sputter deposition apparatus 110 will now be explained. The backing plates 1221 to 1224 of the sputter units 1201 to 1204 are arranged in a line spaced apart from each other on a wall surface on the inside of the vacuum chamber 111. The backing plates 1221 to 1224 are attached to the wall surface of the vacuum chamber 111 via insulators 114, and electrically insulated with the vacuum chamber 111.
On the outside of the outer periphery of the backing plates 1221 to 1224, adhesion-preventing members 125 made of metal are disposed upright at a distance from the outer periphery of the backing plates 1221 to 1224 and are electrically connected to the vacuum chamber 111. The ends of the adhesion-preventing members 125 are bent at a right angle toward the outer peripheries of the targets 1211 to 1214 so as to cover the peripheral edges of the backing plates 1221 to 1224, and surround the surfaces of the targets 1211 to 1244 in a ring shape. Portions on the surface of the targets 1211 to 1214, which are exposed in the inner periphery of the ring of the adhesion-preventing members 125, are referred to as sputtering surfaces.
A vacuum evacuation device 112 is connected to an exhaust opening of the vacuum chamber 111; and the inside of the vacuum chamber 111 is evacuated. An object to be film-deposited 131 is mounted on an object holder 132, carried into the vacuum chamber 111, and held stationary at a position separated from and facing the sputtering surfaces of the targets 1211 to 1214.
A gas introduction system 113 is connected to an inlet of the vacuum chamber 111 and a mixed gas of Ar gas as a sputtering gas and O2 gas as a reaction gas into the vacuum chamber 111. The O2 gas reacts with the surfaces of the targets 1211 to 1214 so as to form the SiO2 as oxide.
A power source device 135 is electrically connected to the backing plates 1221 to 1224. When alternating current (AC) voltages which have mutually opposite polarities are applied to two adjacent targets, the targets enter a state in which one of the two adjacent targets is brought to a positive potential when the other is brought to a negative potential. Electrical discharge is generated between the adjacent targets, and the Ar gas between the targets 1211 to 1214 and the object to be film-deposited 131 is plasmatized.
Alternatively, the following constitution is also possible: the power source device 135 is electrically connected to the backing plates 1221 to 1224 and the object to be film-deposited retainer 132, AC voltages having reverse polarities are applied to the targets 1211 to 1214 and the object to be film-deposited 131; and electrical discharge is generated between the targets 1211 to 1214 and the object to be film-deposited 131; and then, the Ar gas between the targets 1211 to 1214 and the object to be film-deposited 131 is plasmatized. In this case, this method can also be carried out using a single target.
The Ar ions in the plasma are trapped in the magnetic fields formed by the magnet devices 1261 to 1264 on the surfaces of the targets 1211 to 1214 which is the opposite side of the backing plates 1221 to 1224. When the targets 1211 to 1214 are brought to a negative potential, the Ar ions collide into the sputtering surfaces of the targets 1211 to 1214 and hit off particles of SiO2. A part of the SiO2 which is hit off adheres to the surface of the object to be film-deposited 131.
The magnetic fields generated on the targets 1211 to 1214 are non-uniform due to the structure of the magnet devices 1261 to 1264 as described above. Therefore, the Ar ions aggregate at portions of relatively high magnetic density and the targets 1211 to 1214 are scraped away at these portions quickly compared to surrounding portions of relatively low magnetic density. In order to prevent the occurrence of such portions (erosions) where the targets 1211 to 1214 are locally scraped away as discussed above, sputtering is carried out while moving the magnet devices 1261 to 1264. However, when plasma trapped in the magnetic fields is in contact with the electrically-grounded adhesion-preventing members 125, abnormal discharge (arcing) frequently occurs so that it is necessary to move the magnet devices 1261 to 1264 within a range in which the entire outer peripheries of the rings of the outer peripheral magnets 127a1 to 127a4 are positioned on the inside of the outer peripheries of the sputtering surfaces.
Thus, plasma does not reach the outer edges of the targets 1211 to 1214 and areas which are not sputtered (non-erosion areas) are formed. Insulating SiO2 accumulates on the non-erosion areas of the targets 1211 to 1214 and on the surfaces of the adhesion-preventing members 125 to form insulating thin films. This has been a problem because electrical charge builds up on the insulating thin films, and it makes the insulating thin films to cause insulation breakdown at locations where the electrical charge amount exceeds a certain threshold; and thus, electrical current suddenly flows to the targets 1211 to 1214 and causes abnormal discharge (arcing) (see, for example, JPAH04-210471).
The present invention was created in order to solve the disadvantages of the above-described prior art; and an object thereof is to provide a sputter deposition apparatus which can increase the usage efficiency of a target by sputtering the entire sputtering surface of the target as well as prevent the occurrence of arcing.
In order to solve the above problem, the present invention provides a sputter deposition apparatus including a vacuum chamber, a vacuum evacuation device evacuating the inside of the vacuum chamber, a gas introduction system introducing gas into the vacuum chamber, a target having a sputtering surface exposed inside the vacuum chamber, an adhesion-preventing member disposed inside the vacuum chamber and provided to the target so as to surround a periphery of the sputtering surface of the target, a magnet device arranged on a rear surface side opposite to the sputtering surface of the target, a power source device applying a voltage to the target, and a moving device which moves the magnet device in a direction parallel to the rear surface of the target. The magnet device has a ring-shaped outer peripheral magnet which faces toward the rear surface of the target and a center magnet disposed on the inside of the ring formed by the outer peripheral magnet; a polarity of a magnetic pole of a portion at which the outer peripheral magnet faces toward the rear surface of the target and a polarity of a magnetic pole of a portion at which the center magnet faces toward the rear surface of the target are different from each other; the adhesion-preventing member is formed of an insulating ceramic; and the moving device moves the magnet device between a position where the entire outer periphery of the outer peripheral magnet is on the inside of the outer periphery of the sputtering surface and a position where a part of the outer periphery of the outer peripheral magnet protrudes to the outside of the outer periphery of the sputtering surface.
The present invention also provides the sputter deposition apparatus wherein the target is Si, and the gas introduction system has an O2 gas source which releases O2 gas.
Furthermore, the present invention is the sputter deposition apparatus further including a plurality of sputter units which include the target, the adhesion-preventing member provided to the target, and the magnet device disposed on the rear surface side of the target. The targets of the sputter units are arranged in a line spaced apart from each other, each sputtering surface being oriented toward an object to be film-deposited carried into the vacuum chamber; the power source device is configured to apply a voltage to the target of each sputter unit; and the moving device moves the magnet device of one sputter unit between a position where the entire outer periphery of the outer peripheral magnet of the magnet device is on the inside of the outer periphery of the sputtering surface of the target of the sputter unit and a position where a part of the outer periphery of the outer peripheral magnet protrudes out between the outer periphery of the sputtering surface of the target and the outer periphery of the sputtering surface of the target of another sputter unit adjacent to the target.
Since sputtering can be carried out across the entire sputtering surface of the target, the usage efficiency of the target can be improved and the life of the target can be extended.
Since insulant does not accumulate on the electrically-conductive target, arcing does not occur, damage to the target due to arcing can be prevented, and contamination due to impurities in the thin film to be formed can be prevented.
Since the space between the outer peripheries of adjacent targets can be widened, the amount of target material to be used can be reduced; and thus, the cost can be reduced.
a) and 5(b) are schematic views showing a cross-section of a sputter unit during sputtering.
The structure of the sputter deposition apparatus of the present invention will now be explained.
The sputter deposition apparatus 10 includes a vacuum chamber 11 and a plurality of sputter units 201 to 204.
The structure of the sputter units 201 to 204 is the same. The following explanation uses the sputter unit associated with reference numeral 201 as a representative example.
The sputter unit 201 includes a target 211 having a sputtering surface 231 which is exposed inside the vacuum chamber 11 to be sputtered, a backing plate 221, an adhesion-preventing member 251 which is disposed inside the vacuum chamber 11 and provided to the target 211 so as to surround the sputtering surface 231 of the target 211, and a magnet device 261 disposed on a rear surface side, which is the opposite side of the sputtering surface 231 of the target 211.
The target 211 is an electrically-conductive material (such as, Si), which forms an insulating compound when reacted with oxygen or nitrogen.
The target 211 is formed into a flat planar shape and the surface of the target 211 is smaller than the surface of the backing plate 221. The entire outer periphery of the target 211 is positioned on the inside of the outer periphery of the backing plate 221, and the target 211 is stacked upon and affixed to the surface of the backing plate 221 in a manner such that the entire periphery at the peripheral edge of the backing plate 221 is exposed from the outer periphery of the target 211.
The adhesion-preventing member 251 is made of insulating ceramic and has a ring shape. A “ring shape” as used herein refers to a shape surrounding the periphery of the sputtering surface 231 of the target 211, and does not necessarily mean a seamless circular ring. In other words, as long as it surrounds the periphery of the sputtering surface 231 of the target 211, any shape is sufficient, and the ring can include a plurality of parts and have a linear shape at a certain portion thereof.
As shown in
The adhesion-preventing member 251 is disposed on the surface of the backing plate 221 where the target 211 is fixed at a relative position in a manner such that the center of the ring of the adhesion-preventing member 251 overlaps with the center of the target 211, so as to cover the exposed peripheral edge of the backing plate 221 and surround the outer periphery of the target 211 with the inner periphery of the ring of the adhesion-preventing member 251.
The inner periphery of the ring of the adhesion-preventing member 251 is preferably as small as possible so that plasma (to be explained later) does not invade into the gap between the inner periphery of the ring of the adhesion-preventing member 251 and the outer periphery of the target 211.
Among the two surfaces of the target 211, the surface which is closely adhered to the backing plate 221 is referred as the rear surface and the opposite surface is referred as the top surface, while the entire top surface of the target 211 is exposed on the inside of the ring of the adhesion-preventing member 251, and the entire top surface of the target 211 is the sputtering surface to be sputtered. Reference numeral 231 refers to the sputtering surface.
In other words, the adhesion-preventing member 251 is disposed at the ends of the target 211, in which the surface of the target 211 that includes the sputtering surface 231 becomes discontinuous, so as to surround the periphery of the sputtering surface 231.
The adhesion-preventing member 251 of the present invention is not limited to a case in which the inner periphery of the ring of the adhesion-preventing member 251 is the same or larger than the outer periphery of the target 211. As shown in
The magnet device 261 is disposed on the rear surface side of the backing plate 221, or in other words, it is disposed on the rear surface side of the target 211.
The magnet device 261 has a ring-shaped outer peripheral magnet 27a1 which faces toward the underside of the target 211 and a center magnet 27b1 which is disposed on the inside of the ring which is formed by the outer peripheral magnet 27a1. A “ring shape” as used herein refers to a shape surrounding the periphery of the center magnet 27b1, and does not necessarily mean a seamless circular ring. In other words, as long as it surrounds the periphery of the center magnet 27b1, any shape is sufficient, and the ring can include of a plurality of parts and have a linear shape at a certain portion thereof. The shape can also be a closed circular ring or a shape in which a circular ring is deformed while closed.
In other words, the magnet device 261 has a center magnet 27b1 that is disposed at an orientation so as to generate a magnetic field on the sputtering surface 231 and an outer peripheral magnet 27a1 that is disposed in a continuous shape on the periphery of the center magnet 27b1.
The center magnet 27b1 is disposed linearly (herein) on a magnet fixing plate 27c1 which is parallel to the backing plate 221, and the outer peripheral magnet 27a1 disposed on the magnet fixing plate 27c1 surrounds the center magnet 27b1 in a ring shape at a predetermined distance from the peripheral edge of the center magnet 27b1.
In other words, the outer peripheral magnet 27a1 has a ring shape; the center axis line of the ring of the outer peripheral magnet 27a1 is oriented to vertically intersect the rear surface of the target 211; and the center magnet 27b1 is disposed on the inside of the ring of the outer peripheral magnet 27a1.
The outer peripheral magnet 27a1 and the center magnet 27b1 are respectively disposed in a manner such that their magnetic poles of different polarities face toward the rear surface of the target 211. That is, a polarity of the magnetic pole of a portion at which the outer peripheral magnet 27a1 faces toward the rear surface of the target 211 and a polarity of the magnetic pole of a portion at which the center magnet 27b1 faces toward the rear surface of the target 211 are different from each other.
The overall structure of the sputter deposition apparatus 10 will now be explained. The backing plates 221 to 224 of the sputter units 201 to 204 are arranged in a line spaced apart from each other on a wall surface on the inside of the vacuum chamber 11 so that the rear surfaces of the backing plates 221 to 224 faces toward the wall surface.
The backing plates 221 to 224 of the sputter units 201 to 204 are attached to the wall surface of the vacuum chamber 11 via columnar insulators 14; and the backing plates 221 to 224 of the sputter units 201 to 204 and the vacuum chamber 11 are electrically insulated.
Columnar support members 24 are disposed upright on the outside of the outer periphery of the backing plates 221 to 224 of the sputter units 201 to 204; and the adhesion-preventing members 251 to 254 of the sputter units 201 to 204 are fixed on the top ends of the support members 24.
If the support members 24 are electrically conductive, the support members 24 are spaced apart from the outer periphery of the backing plates 221 to 224 of the sputter units 201 to 204. The electrically-conductive support members 24 are electrically connected to the vacuum chamber 11, however, since the adhesion-preventing members 251 to 254 are insulating, so that the backing plates 221 to 224 and the vacuum chamber 11 are electrically insulated even if the adhesion-preventing members 251 to 254 make contact with the backing plates 221 to 224.
A power source device 35 is electrically connected to the backing plates 221 to 224 of the sputter units 201 to 204. The power source device 35 is configured to apply AC voltages (herein) to the backing plates 221 to 224 of the sputter units 201 to 204 in a manner such that the AC voltages are shifted by half a period between two adjacent targets (a so-called AC sputtering method). When AC voltages having reverse polarities are applied to two adjacent targets, when one of the two adjacent targets is brought to a positive potential, the other is brought to a negative potential, so that electrical discharge is generated between the adjacent targets. If the frequency of the AC voltages is in the range of 20 kHz to 70 kHz (20 kHz or greater to 70 kHz or less), the electrical discharge between the adjacent targets can be stabilized and maintained; and thus, a frequency in this range is preferable, and a frequency of 55 kHz is more preferable.
The power source device 35 of the present invention is not limited to a structural arrangement in which it applies AC voltages to the backing plates 221 to 224 of the sputter units 201 to 204; and the power source device 35 can apply pulsed negative voltages multiple times. In this case, the power source device 35 is configured to apply a negative voltage to one target among the two adjacent targets after completing an application of a negative voltage to the other target and before beginning to apply the next negative voltage to the other target.
Alternatively, a power source device 35, which is an AC power source, can be electrically connected to the backing plates 221 to 224 of the sputter units 201 to 204 and an object holder 32 (to be explained later); and AC voltages having reverse polarities can be applied to the targets 211 to 214 and object to be film-deposited 31 (a so-called RF sputtering method). When the predetermined voltages are respectively applied to the backing plates 221 to 224 and the object holder 32 from the power source device 35, electrical discharge is generated between the targets 211 to 214 and the object to be film-deposited 31.
The RF sputtering method can be carried out even in the case in which a single target is used; and thus, the RF sputtering method is advantageous compared to the AC sputtering method.
A moving device 29, which is an XY stage, is disposed on the rear surface side of the magnet fixing plates 27c1 to 27c4 of the magnet devices 261 to 264 of the sputter units 201 to 204; and the magnet devices 261 to 264 are attached to the moving device 29. A control device 36 is connected to the moving device 29, and the moving device 29 is configured to move the magnet devices 261 to 264 of the sputter units 201 to 204 in two directions (the X-axis direction and the Y-axis direction) parallel to the rear surface of the targets 211 to 214 of the sputter units 201 to 204 when a control signal is received from the control device 36.
The structures of the sputter units 201 to 204 are the same. The following explanation uses the sputter unit associated with reference numeral 201 as a representative example. A storage device 37, in which a position where a part of the outer periphery of the outer peripheral magnet 27a1 protrudes to the outside of the outer periphery of the sputter surface 231 is stored, is connected to the control device 36. The protruding position is defined relative to the movement axes of the X-axis and the Y-axis.
The control device 36 is configured to make the magnet device 261 move between a position where the entire outer periphery of the outer peripheral magnet 27a1 is on the inside of the outer periphery of the sputtering surface 231 of the target 211 and the protruding position stored in the storage device 37. If a position at which a part of the outer periphery of the outer peripheral magnet 27a1 protrudes out by a distance longer than a protruding minimum value (to be explained later) is stored in the storage device 37, in the course of repeating such a movement, each point just under every point of the entire sputtering surface 231 faces the surface of the outer peripheral magnet 27a1 at least once, and the outer periphery of the outer peripheral magnet 27a1 intersects every portion over the entire outer periphery of the sputtering surface 231 at least once.
As will be discussed later, when a portion of the outer periphery of the outer peripheral magnet 27a1 protrudes out toward the outside of the outer periphery of the sputtering surface 231 during sputtering, plasma trapped in the magnetic field formed by the magnet device 261 is in contact with the adhesion-preventing member 251. However, because the adhesion-preventing member 251 is made of an insulating ceramic, abnormal discharge is not generated even if the plasma is in contact with the adhesion-preventing member 251 so that the entire sputtering surface 231 is sputtered. Therefore, compared to a conventional apparatus, the usage efficiency of the target 214 can be improved and the life of the target 211 can be extended.
In terms of the relationship between one sputter unit (for example, reference numeral 201) among the sputter units 201 to 204 and another sputter unit 202 that is adjacent thereto, the control device 36 is configured to make the magnet device 261 of the one sputter unit 201 move between a position where the entire outer periphery of the outer peripheral magnet 27a1 of the magnet device 261 is on the inside of the outer periphery of the sputtering surface 231 of the target 211 of the sputter unit 201 and another position where apart of the outer periphery of the outer peripheral magnet 27a2 protrudes out between the outer periphery of the sputtering surface 231 and the outer periphery of the sputtering surface 232 of the target 212 of the other sputter unit 202 adjacent to the target 211.
In other words, if the area between the outer periphery of the sputtering surface 231 of the target 211 of the sputter unit 201 and the outer periphery of the sputtering surface 232 of the target 212 of the other sputter unit 202 adjacent to the sputter unit 201 is referred to as the outside area, the control device 36 is configured to make the magnet device 261 of the sputter unit 201 move between a position where the entire outer periphery of the outer peripheral magnet 27a1 of the magnet device 261 is on the inside of the outer periphery of the sputtering surface 231 of the target 211 of the sputter unit 201 and another position where a part of the outer periphery of the outer peripheral magnet 27a1 protrudes out into the outside area.
In other words, the magnet device 261 disposed on the underside of the sputtering surface 231 of at least one target 211 is configured to move between a position where the entire outer periphery of the outer peripheral magnet 27a1 is on the inside of the inner periphery of the adhesion-preventing member 251 surrounding the periphery of the sputtering surface 231 of the target 211 and another position where a part of the outer periphery of the outer peripheral magnet 27a1 protrudes out between the outside of the inner periphery of the adhesion-preventing member 251 of the target 211 and the inner periphery of the adhesion-preventing member 252 that surrounds the periphery of the sputtering surface 232 of the other target 212 adjacent to the target 211.
Therefore, in the present invention, if the size of the sputtering surfaces 231 to 234 of the targets 211 to 214 of the sputter units 201 to 204 is the same as in a conventional apparatus, and the width between the outer periphery of the erosion area to be sputtered of the sputtering surface 231 of the target 211 of one sputter unit (here, reference number 201) and the outer periphery of the erosion area of the sputtering surface 232 of the target 212 of another sputter unit 202 which is adjacent is the same as that in a conventional apparatus, the gaps between the outer peripheries of the adjacent targets 211 to 214 can be made wider than that in a conventional apparatus. Therefore, compared to a conventional apparatus, the amount of target material to be used can be reduced; and thus, the cost can be reduced.
An exhaust opening is provided on the wall surface of the vacuum chamber 11, and a vacuum evacuation device 12 is connected to the exhaust opening. The vacuum evacuation device 12 is configured to evacuate the inside of the vacuum chamber 11 from the exhaust opening.
An inlet is also provided on the wall surface of the vacuum chamber 11; and a gas introduction system 13 is connected to the inlet. The gas introduction system 13 has a sputtering gas source which releases sputtering gas and a reaction gas source which releases reaction gas reacting with the targets 211 to 214 of the sputter units 201 to 204, and is configured to be capable of introducing a mixed gas of the sputtering gas and the reaction gas into the vacuum chamber 11 from the inlet.
A sputter deposition method in which the sputter deposition apparatus 10 is used to form a SiO2 thin film will now be explained.
First, the following explanation pertains to a step for measuring a protruding minimum value and a protruding maximum value, which are the minimum and maximum amounts that the parts of the outer peripheries of the outer peripheral magnets 27a1 to 27a4 of the magnet devices 261 to 264 of the sputter units 201 to 204 can protrude out from the outer peripheries of the sputtering surfaces 231 to 234 of the targets 211 to 214 of the sputter units 201 to 204.
In reference to
The adhesion-preventing members 251 to 254 of the sputter units 201 to 204 are fixed to the support members 24, and the sputtering surfaces 231 to 234 of the targets 211 to 214 of the sputter units 201 to 204 are exposed on the inside of the rings of the adhesion-preventing members 251 to 254 of the sputter units 201 to 204. Here, Al2O3 is used for the adhesion-preventing members 251 to 254 of the sputter units 201 to 204.
The inside of the vacuum chamber 11 is evacuated by the vacuum evacuation device 12 without carrying the object to be film-deposited 31 into the vacuum chamber 11. Subsequently, a vacuum ambience is maintained inside the vacuum chamber 11 by continuous evacuation.
The mixed gas of the sputtering gas and the reaction gas is introduced into the vacuum chamber 11 from the gas introduction system 13.
Here, Ar gas is used for the sputtering gas, and O2 gas is used for the reaction gas. The mixed gas is introduced into the vacuum chamber 11 at a flow rate of O2 gas of a so-called oxide mode which forms an insulating oxide; SiO2 on the surfaces of the targets 211 to 214 of the sputter units 201 to 204 by reaction of the O2 gas introduced into the vacuum chamber 11 with the surfaces of the targets 211 to 214 of the sputter units 201 to 204. Here, Ar gas is introduced with the flow rate of 50 sccm and O2 gas is introduced with the flow rate of 150 sccm.
The vacuum chamber 11 is brought to grounding potential. When an AC voltage range of 20 kHz to 70 kHz is applied to the backing plates 221 to 224 of the sputter units 201 to 204 from the power source device 35, electrical discharge is generated between the adjacent targets 211 to 214, and the Ar gas above the targets 211 to 214 of the sputter units 201 to 204 is ionized and plasmatized.
Ar ions in the plasma are trapped in the magnetic fields formed by the magnet devices 261 to 264 of the sputter units 201 to 204. When negative voltages are applied to the backing plates 221 to 224 of the sputter units 201 to 204 from the power source device 35, the Ar ions collide into the sputtering surfaces 231 to 234 of the targets 211 to 214 on the backing plates 221 to 224 to which the negative voltages are applied, and SiO2 formed on the sputtering surfaces 231 to 234 is stricken off.
A part of the SiO2 that has been stricken off from the sputtering surfaces 231 to 234 of the targets 211 to 214 of the sputter units 201 to 204 adheres again to the sputtering surfaces 231 to 234 of the targets 211 to 214 of the sputter units 201 to 204.
The state of the sputter units 201 to 204 during sputtering is the same. The following explanation uses the sputter unit associated with reference numeral 201 as a representative example.
The sputtering surface 231 is sputtered while moving the magnet device 261 inside a movement range where the entire outer periphery of the outer peripheral magnet 27a1 is positioned inside of the outer periphery of the sputtering surface 231.
When sputtering is continued, the center portion of the sputtering surface 231 is sputtered and scraped away to a concave shape. The area of the sputtering surface 231, which is sputtered and scraped away, is referred to as an erosion area. SiO2 particles adhered again accumulate at the non-erosion areas, which are areas outside of the erosion area on the sputtering surface 231 that are not sputtered. Reference numeral 49 indicates a thin film of accumulated SiO2.
The erosion area is scraped away until the outer periphery of the erosion area can be visually confirmed.
Next, the movement range of the magnet device 261 is gradually widened and the amount of the part of the outer periphery of the outer peripheral magnet 27a1 that protrudes to the outside of the outer periphery of the sputtering surface 231 is gradually increased, while monitoring the gas composition and the pressure inside the vacuum chamber 11 during evacuation.
As the amount of the portion of the outer periphery of the outer peripheral magnet 27a1 which protrudes to the outside of the outer periphery of the sputtering surface 231 increases, the horizontal component of the magnetic field on the adhesion-preventing member 251 increases, and when the adhesion-preventing member 251 is scraped away by sputtering, the gas composition during evacuation inside the vacuum chamber 11 changes. When the sputtering of the adhesion-preventing member 251 has been confirmed from the change in the gas composition during evacuation inside the vacuum chamber 11, the amount of protrusion of the outer periphery of the outer peripheral magnet 27a1 from the outer periphery of the sputtering surface 231 is measured.
In a producing step (to be explained later), if the adhesion-preventing member 251 is scraped away by sputtering, particles of the adhesion-preventing member 251 adhere to the surface of the object to be film-deposited 31, and the thin film formed on the surface of the object to be film-deposited 31 becomes contaminated with impurities. Thus, the amount of protrusion measured here is the protruding maximum value.
In the case where the degree of hardness of the adhesion-preventing member 251 is so high that it is not sputtered, when a portion of the outer periphery of the outer peripheral magnet 27a1 protrudes to the inside of the sputtering surface 232 of the adjacent target 212 and the sputtering surface 232 of the adjacent target 212 is scraped away, the pressure inside the vacuum chamber 11 changes. When the sputtering of the sputtering surface 232 of the adjacent target 212 has been confirmed from the change in the pressure inside the vacuum chamber 11, the amount of protrusion of the outer periphery of the outer peripheral magnet 27a1 from the outer periphery of the sputtering surface 231 is measured.
In a producing step (to be explained later), if the sputtering surface 232 of the target 212 of one sputter unit 202 is scraped away by plasma trapped in the magnetic field of the magnet device 261 of the adjacent sputter unit 201, the planarity of the thin film formed on the surface of the object to be film-deposited 31 decreases. Thus, the amount of protrusion measured here is the protruding maximum value.
Next, in reference to
The adhesion-preventing members 251 to 254 of the sputter units 201 to 204 are removed from the support members 24; and the targets 211 to 214 of the sputter units 201 to 204 are carried to the outside of the vacuum chamber 11 together with the backing plates 221 to 224.
In reference to
A region inside the interval L1 from the outer periphery of the outer peripheral magnet 27a1 is scraped away by sputtering, the interval L1 found here being the protruding minimum value.
A position where a part of the outer periphery of the outer peripheral magnet 27a1 protrudes to the outside of the outer periphery of the sputtering surface 231 by a distance longer than the protruding minimum value, and shorter than the protruding maximum value is stored in the storage device 37.
Next, the producing step will be explained in reference to
The adhesion-preventing members 251 to 254 of the sputter units 201 to 204 are fixed to the support members 24, and the sputtering surfaces 231 to 234 of the targets 211 to 214 of the sputter units 201 to 204 are exposed on the inside of the rings of the adhesion-preventing members 251 to 254.
The inside of the vacuum chamber 11 is evacuated by the vacuum evacuation device 12. Subsequently, a vacuum ambience is maintained inside the vacuum chamber 11 by continuous evacuation.
The object to be film-deposited 31 mounted on the object holder 32 is carried into the vacuum chamber 11, and then stopped at a position facing the sputtering surfaces 231 to 234 of the targets 211 to 214 with a distance apart form each other.
The mixed gas of sputtering gas and reaction gas is introduced into the vacuum chamber 11 from the gas introduction system 13 at the same flow rate as used in the preparation step discussed above. The surfaces of the targets 211 to 214 of the sputter units 201 to 204 react with the O2 gas, which is the reaction gas, introduced into the vacuum chamber 11 and SiO2 is formed.
Similar to the preparation step, AC voltages in the range of 20 kHz to 70 kHz are applied to the backing plates 221 to 224 of the sputter units 201 to 204 from the power source device 35, the Ar gas, which is the sputtering gas, between the targets 211 to 214 of the sputter units 201 to 204 and the object to be film-deposited 31 is plasmatized, and the sputtering surfaces 231 to 234 of the targets 211 to 214 of the sputter units 201 to 204 are sputtered.
Apart of the SiO2 particles which have been stricken off from the sputtering surfaces 231 to 234 of the targets 211 to 214 of the sputter units 201 to 204 adhere to the surface of the object to be film-deposited 31; and a SiO2 thin film is formed on the surface of the object to be film-deposited 31.
The state of each of the sputter units 201 to 204 during sputtering is the same. The following explanation uses the sputter unit associated with reference numeral 201 as a representative example.
During sputtering, the magnet device 261 of the sputter unit 201 is made to repeatedly move between a position where the entire outer periphery of the outer peripheral magnet 27a1 is on the inside of the outer periphery of the sputtering surface 231 of the target 211 of the sputter unit 201 and the protruding position stored in the storage device 37.
Because the adhesion-preventing member 251 is made of an insulating material, abnormal discharge (arcing) does not occur even if the plasma trapped in the magnetic field of the magnet device 261 is in contact with the adhesion-preventing member 251; and thus, sputtering can be continued.
b) is a schematic view showing a cross-section of the sputtering unit 201 during sputtering in the producing step.
A portion of the outer periphery of the outer peripheral magnet 27a1 protrudes out from each portion of the entire outer periphery of the sputtering surface 231 with a distance longer than the protruding minimum value found in the measuring step. The entire inside of the outer periphery of the sputtering surface 231 is scraped away by sputtering; and SiO2 which adheres again does not accumulate on the sputtering surface 231.
In a conventional sputter deposition apparatus, abnormal discharge (arcing) occurred on the target because insulating SiO2 accumulated on the electrically-conductive target 211. However, in the sputter deposition apparatus 10 of the present invention, because SiO2 does not accumulate on the target 211, arcing does not occur on the target 211.
In the present invention, because arcing does not occur on the target 211, damage to the target 211 due to arcing can be prevented. Further, contamination due to impurities of the thin film formed on the object to be film-deposited 31 can also be prevented.
Furthermore, the distance to which the outer periphery of the outer peripheral magnet 27a1 protrudes from the outer periphery of the sputtering surface 231 is restricted to a distance which is shorter than the protruding maximum value found in the measuring step. Thus, scraping away by sputtering of the adhesion-preventing member 251 can be prevented.
A thin film 49 of SiO2 which adhered again accumulates on the surface of the adhesion-preventing member 251. However, because the adhesion-preventing member 251 is made of an insulating material, insulation breakdown due to the accumulated SiO2 thin film 49 does not occur; and thus, arcing also does not occur on the adhesion-preventing member 251.
Because arcing does not occur on the adhesion-preventing member 251, damage to the adhesion-preventing member 251 due to arcing can be prevented. Furthermore, contamination due to impurities of the thin film formed on the object to be film-deposited 31 can also be prevented.
In reference to
The object to be film-deposited 31 is carried to the outside of the vacuum chamber 11 together with the object holder 32 and sent to a post step. Next, an object to be film-deposited 31 upon which a film has not been deposited is placed on the object holder 32 and carried into the vacuum chamber 11, and sputter deposition according to the producing step, as discussed above, is repeated.
Alternatively, the object to be film-deposited 31 on which a film has been deposited is removed from the object holder 32, carried to the outside of the vacuum chamber 11, and sent to a post step. Next, an object to be film-deposited 31 upon which a film has not been deposited is carried into the vacuum chamber 11, placed on the object holder 32, and sputter deposition according to the producing step, as discussed above, is repeated.
In the above explanation, a case in which the sputter deposition apparatus 10 had a plurality of sputter units 201 to 204 was explained. However, the present invention also includes a case in which there is only one sputter unit.
In the above explanation, O2 gas was used as the reaction gas. However, the present invention also includes a case in which N2 gas, or a mixed gas of O2 gas and N2 gas, is used as the reaction gas to form an insulating SiOxNy thin film (x and y are real numbers of 0 or more that satisfy the relationship x+y is greater than 0 and at most 2).
In the above explanation, in reference to
In
| Number | Date | Country | Kind |
|---|---|---|---|
| 2010-128343 | Jun 2010 | JP | national |
This application is a continuation of International Application No. PCT/JP2011/062666, filed on Jun. 2, 2011, which claims priority to Japan Patent Application No. 2010-128343, filed on Jun. 3, 2010. The contents of the prior applications are herein incorporated by reference in their entireties.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2011/062666 | Jun 2011 | US |
| Child | 13688731 | US |
