Chem Abs (1984) Nov. No. 20 176070r. |
J. Vac Sci & Tech (1986) Sep./Oct. No. 5 2nd S, Eisele. |
J. Electrochem. Soc (1986) No. 5 Oehrlein et al. |
Ing et al, “Glor Discharge Formation of silicon Oxide and the Deposition of Silicon Oxide Thin Film Capacitors by Glow Discharge Techniques”, J. Electrochem. Sod., Mar. 1965, pp. 283-288. |
Amick, “Deposition techniques for dielectric films on semiconductor devices”, J. Vac. Sci. Technol. vol. 14, No. 5 Sep./Oct. 1977, pp. 1053-1063. |
Pande et al, “A Novel Low-Temperature Method of SiO2 Film Deposition for MOSFET Applications”, J. Electronic Materials, vol. 13, No. 3, 1984, pp. 593-602. |
Pan et al, “The Composition and Properties of PECVD Silicon Oxide Filme”, J. Electrochem. Soc. Solid State Science and Technology”, Aug. 1985, pp. 2012-2019. |
Chow et al, “Trend of plasma CVD apparatus”, Jul. 1981, pp. 148-155. |
Kirov et al, “SiO2 Layers Deposited by Plasma Decomposition, Institute orf Solid State Physics, Sofia, B8lgaria. (1)48, 1978, pp. 609-613. |
Shanfield et al, “Process Characterization of PSG and BPSG Plasma Deposition”, J. Electrochem. Soc., vol. 131, No. 9, 1984, pp. 2202-2203. |
Pande et al, “Plasma enhanced metal-organic chemical vapor deposition of aluminum oxide dielectric film for device applications”, J. Appl. Phys. vol. 54, No. 9, Sep. 1983, pp. 5436-5440. |
Hess, “Plasma-enhanced CVD: Oxides, nitrides, t5ransition metals, and transition metal silicies”, J. Vac. Sci. Technol. A 2(2) Apr.-Jun., 1984, pp. 244-252. |
Shii et al, Ionics, Jul. 1981, pp. 111-125. |
Rand, “Plasma-promoted deposition of thin inorganic films”, J. Vac. Sci. Technol. 16(2), Mar./Apr., 1979, pp. 420-427. |
Mitone et al, Ionics Jul. 1981 pp126-141. |
Levin et al, “Low Pressure Deposition of Phosphosilicate Glass Films:, J. Electrochem. Sod. Vol. 129 No. 7, Jul. 1982, pp. 1588-1592. |
Mackens et al, “Plasma-Enhanced Chgemically Vapour Deposited Silicon Dioxide for Mertal Oxide Semiconductor Structures on InSb”, Thin Solid Films, 97, 1982, pp. 53-61. |
Mukherjee et al, “The Deposition of Thin Films by the Decomposition of Tetraethoxysilane in a Radio Frequency Glow Discharge”, Thin Solid Films, 14 (1972, pp. 105-118. |
Levin et akl, “The step coverage of undoped and phosphorus-doped SiO2 glass films”, J. Vac. Sci. Technol. B 1(1), Jan.-Mar., 1983, pp. 54-61. |
Yamada, Ionics, Jul. 1981, pp. 142-146. |
Takiguchi, Ionics, Jul. 1981, pp. 94-110. |
Ito et al, Ionics-Ion Science and Technolg vol. 7, No. 7 (series 69) Jul., 1981, pp. 1-69. |
Woodward et al, “The Deposition of Insulators onto InP using Plasm-Enhanced Chemical Vapour Deposition”, Thin Solid Films, 85 (1981) pp. 61-69. |