Claims
- 1. A method of fabricating an integrated circuit having copper metal interconnects, comprising the steps of:forming an interlevel dielectric (ILD) over a semiconductor body; forming an intrametal dielectric (IMD) over the ILD; oxidizing said IMD with a highly oxidizing wet solution; forming a via resist pattern over said IMD; etching a via in said IMD and ILD using said via resist pattern; at least partially filling said via with a material; forming a trench resist pattern over said IMD; etching a trench in said IMD using said trench resist pattern; removing said trench resist pattern and said material in said via; and forming a copper interconnect in said via and said trench.
- 2. The method of claim 1, wherein said highly oxidizing wet solution comprises H2SO4.
- 3. The method of claim 1, wherein said highly oxidizing wet solution is selected from the group consisting of H2SO4, H2SO4:H2O2, HNO3:H2O2, H2O2:H2O, and O3:H2O.
- 4. The method of claim 1, wherein said oxidizing step occurs prior to the step forming the via resist pattern.
- 5. The method of claim 4, further comprising the step of additionally treating the IMD using a highly oxidizing wet solution after said step of at least partially filling the via and prior to the step of etching the trench.
- 6. The method of claim 1, wherein said oxidizing step occurs after the step of forming the via resist pattern.
- 7. The method of claim 1, wherein said oxidizing step occurs after said step of at least partially filling the via and prior to the step of etching the trench.
Parent Case Info
This is continuation application of Ser. No. 09/997,775 filed Nov. 30, 2001 now abandoned which is a non-provisional application of provisional application number 60/250,241 filed Nov. 30, 2000.
US Referenced Citations (11)
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/250241 |
Nov 2000 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/997775 |
Nov 2001 |
US |
Child |
10/143314 |
|
US |