Kyle Spring

Person

Temecula, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Short channel trench power MOSFET with low threshold voltage
- Patent number 7,701,001
- Issue date Apr 20, 2010
- International Rectifier Corporation
- Cao Jianjun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current sense trench type MOSFET with improved accuracy and ESD wit...
- Patent number 7,619,280
- Issue date Nov 17, 2009
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET technology for DC-DC converter applications
- Patent number 7,557,395
- Issue date Jul 7, 2009
- International Rectifier Corporation
- Ling Ma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Enhancement mode GaN FET with piezoelectric gate
- Patent number 7,504,679
- Issue date Mar 17, 2009
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature process and structures for polycide power MOSFET wi...
- Patent number 7,473,604
- Issue date Jan 6, 2009
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top drain MOSgated device and process of manufacture therefor
- Patent number 7,439,580
- Issue date Oct 21, 2008
- International Rectifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET fabrication using inside/outside spacers
- Patent number 7,390,717
- Issue date Jun 24, 2008
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET with reduced gate resistance
- Patent number 7,368,353
- Issue date May 6, 2008
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature process and structures for polycide power MOSFET wi...
- Patent number 7,217,976
- Issue date May 15, 2007
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench mosfet with field relief feature
- Patent number 7,161,208
- Issue date Jan 9, 2007
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion implant for power MOSFET
- Patent number 7,091,080
- Issue date Aug 15, 2006
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device and method of manufacture therefor
- Patent number 6,969,657
- Issue date Nov 29, 2005
- International Rectifier Corporation
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device with a trench termi...
- Patent number 6,921,699
- Issue date Jul 26, 2005
- International Rectifier Corporation
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced mask count process for manufacture of mosgated device
- Patent number 6,893,923
- Issue date May 17, 2005
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with ultra-deep base and reduced on resistance
- Patent number 6,846,706
- Issue date Jan 25, 2005
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process for its manufacture to increase th...
- Patent number 6,818,958
- Issue date Nov 16, 2004
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with reduced threshold voltage and on resistance and process...
- Patent number 6,781,203
- Issue date Aug 24, 2004
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with ultra-deep base and reduced on resistance
- Patent number 6,639,276
- Issue date Oct 28, 2003
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage power schottky with aluminum barrier metal spaced from...
- Patent number 5,859,465
- Issue date Jan 12, 1999
- International Rectifier Corporation
- Kyle A. Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radhard mosfet with thick gate oxide and deep channel region
- Patent number 5,831,318
- Issue date Nov 3, 1998
- International Rectifier Corporation
- Kyle A. Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacture of radiation resistant power MOSFET and rad...
- Patent number 5,475,252
- Issue date Dec 12, 1995
- International Rectifier Corporation
- Perry Merrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacture of radiation resistant power MOSFET and rad...
- Patent number 5,338,693
- Issue date Aug 16, 1994
- International Rectifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCEMENT MODE GaN FET WITH PIEZOELECTRIC GATE
- Publication number 20080017867
- Publication date Jan 24, 2008
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE PROCESS AND STRUCTURES FOR POLYCIDE POWER MOSFET WI...
- Publication number 20070111446
- Publication date May 17, 2007
- INTERNATIONAL RECTIFIER CORPORATION
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Top drain mosgated device and process of manufacture therefor
- Publication number 20060043474
- Publication date Mar 2, 2006
- International Recifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench power MOSFET fabrication using inside/outside spacers
- Publication number 20050208724
- Publication date Sep 22, 2005
- International Rectifier Corp.
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature process and structures for polycide power MOSFET wi...
- Publication number 20050173760
- Publication date Aug 11, 2005
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Top drain MOSFET with thickened oxide at trench top
- Publication number 20050173741
- Publication date Aug 11, 2005
- International Rectifier Corp.
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Current sense trench type MOSFET with improved accuracy and ESD wit...
- Publication number 20050174823
- Publication date Aug 11, 2005
- International Rectifier Corp.
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench power MOSFET with reduced gate resistance
- Publication number 20050112823
- Publication date May 26, 2005
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET technology for DC-DC converter applications
- Publication number 20040251491
- Publication date Dec 16, 2004
- Ling Ma
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Superjunction device and method of manufacture therefore
- Publication number 20040224455
- Publication date Nov 11, 2004
- Timothy Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device processing
- Publication number 20040137684
- Publication date Jul 15, 2004
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET with ultra-deep base and reduced on resistance
- Publication number 20040053448
- Publication date Mar 18, 2004
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench mosfet with field relief feature
- Publication number 20030213993
- Publication date Nov 20, 2003
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short channel trench power MOSFET with low threshold voltage
- Publication number 20030214011
- Publication date Nov 20, 2003
- International Rectifier Corporation
- Cao Jianjun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfet with reduced threshold voltage and on resistance and process...
- Publication number 20030089945
- Publication date May 15, 2003
- International Rectifier Corp.
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFET with ultra-deep base and reduced on resistance
- Publication number 20030020115
- Publication date Jan 30, 2003
- International Rectifier Corp.
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short channel power MOSFET with increased breakdown voltage
- Publication number 20030006483
- Publication date Jan 9, 2003
- International Rectifier Corp.
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and process for its manufacture to increase th...
- Publication number 20020149079
- Publication date Oct 17, 2002
- International Rectifier Corp.
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced mask count process for manufacture of mosgated device
- Publication number 20020137322
- Publication date Sep 26, 2002
- International Rectifier Corp.
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depletion implant for power MOSFET
- Publication number 20020117687
- Publication date Aug 29, 2002
- International Rectifier Corp.
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS

Kyle Spring

Person

Patents Grantslast 30 patents

Short channel trench power MOSFET with low threshold voltage

Current sense trench type MOSFET with improved accuracy and ESD wit...

Trench MOSFET technology for DC-DC converter applications

Enhancement mode GaN FET with piezoelectric gate

Low temperature process and structures for polycide power MOSFET wi...

Top drain MOSgated device and process of manufacture therefor

Trench power MOSFET fabrication using inside/outside spacers

Trench power MOSFET with reduced gate resistance

Low temperature process and structures for polycide power MOSFET wi...

Trench mosfet with field relief feature

Depletion implant for power MOSFET

Superjunction device and method of manufacture therefor

Method for manufacturing a semiconductor device with a trench termi...

Reduced mask count process for manufacture of mosgated device

Power MOSFET with ultra-deep base and reduced on resistance

Semiconductor device and process for its manufacture to increase th...

MOSFET with reduced threshold voltage and on resistance and process...

Power MOSFET with ultra-deep base and reduced on resistance

High voltage power schottky with aluminum barrier metal spaced from...

Radhard mosfet with thick gate oxide and deep channel region

Process for manufacture of radiation resistant power MOSFET and rad...

Process for manufacture of radiation resistant power MOSFET and rad...

Patents Applicationslast 30 patents

ENHANCEMENT MODE GaN FET WITH PIEZOELECTRIC GATE

LOW TEMPERATURE PROCESS AND STRUCTURES FOR POLYCIDE POWER MOSFET WI...

Top drain mosgated device and process of manufacture therefor

Trench power MOSFET fabrication using inside/outside spacers

Low temperature process and structures for polycide power MOSFET wi...

Top drain MOSFET with thickened oxide at trench top

Current sense trench type MOSFET with improved accuracy and ESD wit...

Trench power MOSFET with reduced gate resistance

Trench MOSFET technology for DC-DC converter applications

Superjunction device and method of manufacture therefore

Semiconductor device processing

Power MOSFET with ultra-deep base and reduced on resistance

Trench mosfet with field relief feature

Short channel trench power MOSFET with low threshold voltage

Mosfet with reduced threshold voltage and on resistance and process...

Power MOSFET with ultra-deep base and reduced on resistance

Short channel power MOSFET with increased breakdown voltage

Semiconductor device and process for its manufacture to increase th...

Reduced mask count process for manufacture of mosgated device

Depletion implant for power MOSFET