Richard Hammond

Person

Cambridge, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 9,048,167
- Issue date Jun 2, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reacted conductive gate electrodes and methods of making the same
- Patent number 8,785,315
- Issue date Jul 22, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 7,906,776
- Issue date Mar 15, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reacted conductive gate electrodes
- Patent number 6,982,474
- Issue date Jan 3, 2006
- AmberWave Systems Corporation
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 6,933,518
- Issue date Aug 23, 2005
- AmberWave Systems Corporation
- Glyn Braithwaite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective removal of SiGe alloys
- Patent number 6,900,094
- Issue date May 31, 2005
- AmberWave Systems Corporation
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate technology for strained surface channel and strained buried ch...
- Patent number 6,846,715
- Issue date Jan 25, 2005
- AmberWave Systems Corporation
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures employing strained material layers with de...
- Patent number 6,831,292
- Issue date Dec 14, 2004
- AmberWave Systems Corporation
- Matthew Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-biasing to populate strained layer quantum wells
- Patent number 6,680,496
- Issue date Jan 20, 2004
- AmberWave Systems Corp.
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate technology for strained surface channel and strained buried ch...
- Patent number 6,583,015
- Issue date Jun 24, 2003
- AmberWave Systems Corporation
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20140312389
- Publication date Oct 23, 2014
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reacted Conductive Gate Electrodes and Methods of Making the Same
- Publication number 20120098054
- Publication date Apr 26, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF Circuits Including Transistors Having Strained Material Layers
- Publication number 20100264995
- Publication date Oct 21, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR STRUCTURES EMPLOYING STRAINED MATERIAL LAYERS WITH DE...
- Publication number 20070293009
- Publication date Dec 20, 2007
- Matthew Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES EMPLOYING STRAINED MATERIAL LAYERS WITH DE...
- Publication number 20070293003
- Publication date Dec 20, 2007
- Matthew Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate technology for strained surface channel and strained buried ch...
- Publication number 20070082470
- Publication date Apr 12, 2007
- AmberWave System Corporation
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF circuits including transistors having strained material layers
- Publication number 20050116219
- Publication date Jun 2, 2005
- AmberWave Systems Corporation
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Back-biasing to populate strained layer quantum wells
- Publication number 20040084668
- Publication date May 6, 2004
- AmberWave Systems Corporation
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-BIASING TO POPULATE STRAINED LAYER QUANTUM WELLS
- Publication number 20040004230
- Publication date Jan 8, 2004
- AmberWave Systems Corporation
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiGe gate electrodes on SiGe subtrates and methods of making the same
- Publication number 20030234439
- Publication date Dec 25, 2003
- AmberWave Systems Corporation
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-semiconductor-on-insulator device structures
- Publication number 20030227057
- Publication date Dec 11, 2003
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate technology for strained surface channel and strained buried ch...
- Publication number 20030207571
- Publication date Nov 6, 2003
- AmberWave Systems Corporation
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF circuits including transistors having strained material layers
- Publication number 20030102498
- Publication date Jun 5, 2003
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor structures employing strained material layers with de...
- Publication number 20030057416
- Publication date Mar 27, 2003
- AmberWave Systems Corporation
- Matthew Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for isolating semiconductor devices
- Publication number 20030049893
- Publication date Mar 13, 2003
- Matthew Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of selective removal of SiGe alloys
- Publication number 20030013323
- Publication date Jan 16, 2003
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate technology for strained surface channel and strained buried ch...
- Publication number 20020104993
- Publication date Aug 8, 2002
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate technology for strained surface channel and strained buried ch...
- Publication number 20020068393
- Publication date Jun 6, 2002
- Eugene A. Fitzgerald
- H01 - BASIC ELECTRIC ELEMENTS

Richard Hammond

Person

Patents Grantslast 30 patents

Reacted conductive gate electrodes and methods of making the same

Reacted conductive gate electrodes and methods of making the same

RF circuits including transistors having strained material layers

Reacted conductive gate electrodes

RF circuits including transistors having strained material layers

Method of selective removal of SiGe alloys

Gate technology for strained surface channel and strained buried ch...

Semiconductor structures employing strained material layers with de...

Back-biasing to populate strained layer quantum wells

Gate technology for strained surface channel and strained buried ch...

Patents Applicationslast 30 patents

Reacted Conductive Gate Electrodes and Methods of Making the Same

Reacted Conductive Gate Electrodes and Methods of Making the Same

RF Circuits Including Transistors Having Strained Material Layers

SEMICONDUCTOR STRUCTURES EMPLOYING STRAINED MATERIAL LAYERS WITH DE...

SEMICONDUCTOR STRUCTURES EMPLOYING STRAINED MATERIAL LAYERS WITH DE...

Gate technology for strained surface channel and strained buried ch...

RF circuits including transistors having strained material layers

Back-biasing to populate strained layer quantum wells

BACK-BIASING TO POPULATE STRAINED LAYER QUANTUM WELLS

SiGe gate electrodes on SiGe subtrates and methods of making the same

Strained-semiconductor-on-insulator device structures

Gate technology for strained surface channel and strained buried ch...

RF circuits including transistors having strained material layers

Semiconductor structures employing strained material layers with de...

Method for isolating semiconductor devices

Method of selective removal of SiGe alloys

Gate technology for strained surface channel and strained buried ch...

Gate technology for strained surface channel and strained buried ch...