Steven Patrick Maxwell

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reduced diffusion in metal electrode for two-terminal memory
- Patent number 10,910,561
- Issue date Feb 2, 2021
- Crossbar, Inc.
- Steven Patrick Maxwell
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrative resistive memory in backend metal layers
- Patent number 10,319,908
- Issue date Jun 11, 2019
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable silicon based resistive memory device
- Patent number 10,290,801
- Issue date May 14, 2019
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for a non-volatile (NV) resistive memory and a...
- Patent number 10,192,927
- Issue date Jan 29, 2019
- Crossbar, Inc.
- Mark Harold Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed high voltage metal oxide semiconductor transistor for RRAM...
- Patent number 10,115,819
- Issue date Oct 30, 2018
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated resistive memory using integrated-circuit...
- Patent number 10,096,653
- Issue date Oct 9, 2018
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated resistive memory using integrated-circuit...
- Patent number 9,741,765
- Issue date Aug 22, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced diffusion in metal electrode for two-terminal memory
- Patent number 9,685,608
- Issue date Jun 20, 2017
- Crossbar, Inc.
- Steven Patrick Maxwell
- G11 - INFORMATION STORAGE
Information Patent Grant
Sub-oxide interface layer for two-terminal memory
- Patent number 9,601,690
- Issue date Mar 21, 2017
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory (RRAM) cell and method for forming t...
- Patent number 9,595,670
- Issue date Mar 14, 2017
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating resistive memory device switching material...
- Patent number 9,583,701
- Issue date Feb 28, 2017
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mitigating damage from a chemical mechanical planarization process
- Patent number 9,437,814
- Issue date Sep 6, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for surface roughness reduction after silicon germanium thin...
- Patent number 9,425,046
- Issue date Aug 23, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable RRAM device architecture for a non-volatile memory device...
- Patent number 9,412,790
- Issue date Aug 9, 2016
- Crossbar, Inc.
- Mark Harold Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for silver deposition for a non-volatile memory device
- Patent number 9,401,475
- Issue date Jul 26, 2016
- Crossbar, Inc.
- Steven Patrick Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature in-situ doped silicon-based conductor material for...
- Patent number 9,343,668
- Issue date May 17, 2016
- Crossbar, Inc.
- Steve Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure for a non-volatile memory device and method
- Patent number 9,312,483
- Issue date Apr 12, 2016
- Crossbar, Inc.
- Steven Patrick Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature deposition for silicon-based conductive film
- Patent number 9,269,898
- Issue date Feb 23, 2016
- Crossbar, Inc.
- Steven Patrick Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-oxide interface layer for two-terminal memory
- Patent number 9,166,163
- Issue date Oct 20, 2015
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells having storage elements that share material layers wit...
- Patent number 8,981,331
- Issue date Mar 17, 2015
- Sandisk 3D LLC
- Yung-Tin Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Memory cells having storage elements that share material layers wit...
- Patent number 8,969,845
- Issue date Mar 3, 2015
- Sandisk 3D LLC
- Yung-Tin Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Barrier structure for a silver based RRAM and method
- Patent number 8,946,667
- Issue date Feb 3, 2015
- Crossbar, Inc.
- Mark Harold Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for silver deposition for a non-volatile memory device
- Patent number 8,889,521
- Issue date Nov 18, 2014
- Crossbar, Inc.
- Steven Patrick Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silver deposition method for a non-volatile memory device
- Patent number 8,883,603
- Issue date Nov 11, 2014
- Crossbar, Inc.
- Steven Patrick Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diodes with native oxide regions for use in memory arrays and metho...
- Patent number 8,866,124
- Issue date Oct 21, 2014
- Sandisk 3D LLC
- Steven Maxwell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Line and space architecture for a non-volatile memory device
- Patent number 8,765,566
- Issue date Jul 1, 2014
- Crossbar, Inc.
- Steven Patrick Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for etching carbon nano-tube films for use in non-volatile...
- Patent number 8,445,385
- Issue date May 21, 2013
- Sandisk 3D LLC
- April D. Schricker
- B82 - NANO-TECHNOLOGY
Information Patent Grant
3D polysilicon diode with low contact resistance and method for for...
- Patent number 8,410,582
- Issue date Apr 2, 2013
- Sandisk 3D LLC
- Abhijit Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells having storage elements that share material layers wit...
- Patent number 8,389,971
- Issue date Mar 5, 2013
- Sandisk 3D LLC
- Yung-Tin Chen
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Memory cell formed using a recess and methods for forming the same
- Patent number 8,389,375
- Issue date Mar 5, 2013
- Sandisk 3D LLC
- Steven Maxwell
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
RECESSED HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RRAM...
- Publication number 20160351625
- Publication date Dec 1, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATIVE RESISTIVE MEMORY IN BACKEND METAL LAYERS
- Publication number 20150318333
- Publication date Nov 5, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED RESISTIVE MEMORY USING INTEGRATED-CIRCUIT...
- Publication number 20150243886
- Publication date Aug 27, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE DEPOSITION FOR SILICON-BASED CONDUCTIVE FILM
- Publication number 20150228894
- Publication date Aug 13, 2015
- Crossbar, Inc.
- Steven Patrick MAXWELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALABLE SILICON BASED RESISTIVE MEMORY DEVICE
- Publication number 20150228893
- Publication date Aug 13, 2015
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...
- Publication number 20140284538
- Publication date Sep 25, 2014
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE IN-SITU DOPED SILICON-BASED CONDUCTOR MATERIAL FOR...
- Publication number 20140264250
- Publication date Sep 18, 2014
- Crossbar, Inc.
- Steve MAXWELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED DIFFUSION IN METAL ELECTRODE FOR TWO-TERMINAL MEMORY
- Publication number 20140192589
- Publication date Jul 10, 2014
- Crossbar, Inc.
- Steven Patrick MAXWELL
- G11 - INFORMATION STORAGE
Information Patent Application
SUB-OXIDE INTERFACE LAYER FOR TWO-TERMINAL MEMORY
- Publication number 20140145135
- Publication date May 29, 2014
- Crossbar, Inc.
- Harry Yue GEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURE FOR A NON-VOLATILE MEMORY DEVICE AND METHOD
- Publication number 20140084233
- Publication date Mar 27, 2014
- Crossbar, Inc.
- Steven Patrick MAXWELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINE AND SPACE ARCHITECTURE FOR A NON-VOLATILE MEMORY DEVICE
- Publication number 20130299769
- Publication date Nov 14, 2013
- Crossbar, Inc.
- Steven Patrick MAXWELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...
- Publication number 20130175492
- Publication date Jul 11, 2013
- SanDisk 3D LLC
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D POLYSILICON DIODE WITH LOW CONTACT RESISTANCE AND METHOD FOR FOR...
- Publication number 20120228579
- Publication date Sep 13, 2012
- Abhijit Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODES WITH NATIVE OXIDE REGIONS FOR USE IN MEMORY ARRAYS AND METHO...
- Publication number 20120193756
- Publication date Aug 2, 2012
- Steven Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR STORAGE ELEMENTS FOR USE IN MEMORY CELLS AND METHODS OF FOR...
- Publication number 20120091418
- Publication date Apr 19, 2012
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL FORMED USING A RECESS AND METHODS FOR FORMING THE SAME
- Publication number 20110193042
- Publication date Aug 11, 2011
- Steven Maxwell
- B82 - NANO-TECHNOLOGY
Information Patent Application
3D POLYSILICON DIODE WITH LOW CONTACT RESISTANCE AND METHOD FOR FOR...
- Publication number 20110062557
- Publication date Mar 17, 2011
- Abhijit Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode Array and Method of Making Thereof
- Publication number 20110065243
- Publication date Mar 17, 2011
- SanDisk 3D LLC
- Steven Maxwell
- G11 - INFORMATION STORAGE
Information Patent Application
Method of making damascene diodes using sacrificial material
- Publication number 20110014779
- Publication date Jan 20, 2011
- SANDISK 3D LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-BASED FILMS, AND METHODS OF FORMING THE SAME, HAVING DIELECT...
- Publication number 20100245029
- Publication date Sep 30, 2010
- SanDisk 3D LLC
- April D. Schricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanoimprint enhanced resist spacer patterning method
- Publication number 20100167502
- Publication date Jul 1, 2010
- SANDISK 3D LLC
- Bing K. Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making sub-resolution pillar structures using undercuttin...
- Publication number 20100086875
- Publication date Apr 8, 2010
- SANDISK 3D LLC
- Chung-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ETCHING CARBON NANO-TUBE FILMS FOR USE IN NON-VOLATILE...
- Publication number 20090278112
- Publication date Nov 12, 2009
- SanDisk 3D LLC
- April D. Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
Method for fabricating self-aligned complimentary pillar structures...
- Publication number 20090269932
- Publication date Oct 29, 2009
- SANDISK 3D LLC
- Yung-Tin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE ARRAY AND METHOD OF MAKING THEREOF
- Publication number 20090085153
- Publication date Apr 2, 2009
- SANDISK 3D LLC
- Steven Maxwell
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND APPARATUS FOR COST-EFFECTIVELY INCREASING FEATURE DENSI...
- Publication number 20090087993
- Publication date Apr 2, 2009
- Steven Maxwell
- H01 - BASIC ELECTRIC ELEMENTS

Steven Patrick Maxwell

Person

Patents Grantslast 30 patents

Reduced diffusion in metal electrode for two-terminal memory

Integrative resistive memory in backend metal layers

Scalable silicon based resistive memory device

Semiconductor device for a non-volatile (NV) resistive memory and a...

Recessed high voltage metal oxide semiconductor transistor for RRAM...

Monolithically integrated resistive memory using integrated-circuit...

Monolithically integrated resistive memory using integrated-circuit...

Reduced diffusion in metal electrode for two-terminal memory

Sub-oxide interface layer for two-terminal memory

Resistive random access memory (RRAM) cell and method for forming t...

Methods for fabricating resistive memory device switching material...

Mitigating damage from a chemical mechanical planarization process

Method for surface roughness reduction after silicon germanium thin...

Scalable RRAM device architecture for a non-volatile memory device...

Method for silver deposition for a non-volatile memory device

Low temperature in-situ doped silicon-based conductor material for...

Electrode structure for a non-volatile memory device and method

Low temperature deposition for silicon-based conductive film

Sub-oxide interface layer for two-terminal memory

Memory cells having storage elements that share material layers wit...

Memory cells having storage elements that share material layers wit...

Barrier structure for a silver based RRAM and method

Method for silver deposition for a non-volatile memory device

Silver deposition method for a non-volatile memory device

Diodes with native oxide regions for use in memory arrays and metho...

Line and space architecture for a non-volatile memory device

Methods for etching carbon nano-tube films for use in non-volatile...

3D polysilicon diode with low contact resistance and method for for...

Memory cells having storage elements that share material layers wit...

Memory cell formed using a recess and methods for forming the same

Patents Applicationslast 30 patents

RECESSED HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RRAM...

INTEGRATIVE RESISTIVE MEMORY IN BACKEND METAL LAYERS

MONOLITHICALLY INTEGRATED RESISTIVE MEMORY USING INTEGRATED-CIRCUIT...

LOW TEMPERATURE DEPOSITION FOR SILICON-BASED CONDUCTIVE FILM

SCALABLE SILICON BASED RESISTIVE MEMORY DEVICE

MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...

LOW TEMPERATURE IN-SITU DOPED SILICON-BASED CONDUCTOR MATERIAL FOR...

REDUCED DIFFUSION IN METAL ELECTRODE FOR TWO-TERMINAL MEMORY

SUB-OXIDE INTERFACE LAYER FOR TWO-TERMINAL MEMORY

ELECTRODE STRUCTURE FOR A NON-VOLATILE MEMORY DEVICE AND METHOD

LINE AND SPACE ARCHITECTURE FOR A NON-VOLATILE MEMORY DEVICE

MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WIT...

3D POLYSILICON DIODE WITH LOW CONTACT RESISTANCE AND METHOD FOR FOR...

DIODES WITH NATIVE OXIDE REGIONS FOR USE IN MEMORY ARRAYS AND METHO...

BIPOLAR STORAGE ELEMENTS FOR USE IN MEMORY CELLS AND METHODS OF FOR...

MEMORY CELL FORMED USING A RECESS AND METHODS FOR FORMING THE SAME

3D POLYSILICON DIODE WITH LOW CONTACT RESISTANCE AND METHOD FOR FOR...

Diode Array and Method of Making Thereof

Method of making damascene diodes using sacrificial material

CARBON-BASED FILMS, AND METHODS OF FORMING THE SAME, HAVING DIELECT...

Nanoimprint enhanced resist spacer patterning method

Method of making sub-resolution pillar structures using undercuttin...

METHODS FOR ETCHING CARBON NANO-TUBE FILMS FOR USE IN NON-VOLATILE...

Method for fabricating self-aligned complimentary pillar structures...

DIODE ARRAY AND METHOD OF MAKING THEREOF

METHODS AND APPARATUS FOR COST-EFFECTIVELY INCREASING FEATURE DENSI...