J-Fet, i.e.junction field effect transistor

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Y10S148/088

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/088J-Fet, i.e.junction field effect transistor

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Patents Grantslast 30 patents

Information Patent Grant
High-density read-only memory fabrication
- Patent number 5,418,178
- Issue date May 23, 1995
- AT&T Corp.
- Masakazu Shoji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing InP junction FETS and junction HEMTS using...
- Patent number 5,196,358
- Issue date Mar 23, 1993
- The United States of America as represented by the Secretary of the Navy
- John B. Boos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer surface gate JFET having enhanced gate-channel breakdown...
- Patent number 5,118,632
- Issue date Jun 2, 1992
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor device fabricated with semiconductor regrowth
- Patent number 5,106,778
- Issue date Apr 21, 1992
- Massachusetts Institute of Technology
- Mark A. Hollis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices
- Patent number 5,106,770
- Issue date Apr 21, 1992
- GTE Laboratories Incorporated
- Emel S. Bulat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a schottky electrode
- Patent number 5,045,497
- Issue date Sep 3, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Kazuo Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a GaAs JFET with self-aligned p-type gate by outdi...
- Patent number 5,015,596
- Issue date May 14, 1991
- Kabushiki Kaisha Toshiba
- Nobuyuki Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static induction transistor and manufacturing method of the same
- Patent number 4,945,392
- Issue date Jul 31, 1990
- Olympus Optical Co., Ltd.
- Yoshinori Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 4,895,811
- Issue date Jan 23, 1990
- Kabushiki Kaisha Toshiba
- Kazuhiko Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static induction transistor and manufacturing method of the same
- Patent number 4,889,826
- Issue date Dec 26, 1989
- Olympus Optical Co., Ltd.
- Yoshinori Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for buried channel field effect transistor for microwave and...
- Patent number 4,833,095
- Issue date May 23, 1989
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of high voltage IC bopolar transistors operab...
- Patent number 4,808,547
- Issue date Feb 28, 1989
- Harris Corporation
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a junction field effect transistor
- Patent number 4,729,967
- Issue date Mar 8, 1988
- GTE Laboratories Incorporated
- Craig A. Armiento
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating buried channel field-effect transistor for m...
- Patent number 4,724,220
- Issue date Feb 9, 1988
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET with Fermi level pinning between channel and heavily doped semi...
- Patent number 4,698,652
- Issue date Oct 6, 1987
- Hitachi, Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices controlled by depletion regions
- Patent number 4,698,653
- Issue date Oct 6, 1987
- Walter T. Cardwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a junction field effect transistor utilizing...
- Patent number 4,651,407
- Issue date Mar 24, 1987
- GTE Laboratories Incorporated
- Izak Bencuya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxial growth of carbon doped layers of Group III-V...
- Patent number 4,632,710
- Issue date Dec 30, 1986
- Raytheon Company
- H. Barteld Van Rees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating buried channel field effect transistor for m...
- Patent number 4,601,096
- Issue date Jul 22, 1986
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a gallium arsenide field effect transistor
- Patent number 4,545,109
- Issue date Oct 8, 1985
- RCA Corporation
- Walter F. Reichert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the formation of buried gates of a semiconductor device...
- Patent number 4,528,745
- Issue date Jul 16, 1985
- Toyo Denki Seizo Kabushiki Kaisha
- Kimihiro Muraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial etch planar processing for gallium arsenide sem...
- Patent number 4,426,767
- Issue date Jan 24, 1984
- Sperry Cororation
- Alan W. Swanson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned extended epitaxy mesfet fabrication process
- Patent number 4,404,732
- Issue date Sep 20, 1983
- IBM Corporation
- Thomas L. Andrade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metal semiconductor field effect transistor
- Patent number 4,358,891
- Issue date Nov 16, 1982
- Burroughs Corporation
- Bruce Roesner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device utilizing selective...
- Patent number 4,329,772
- Issue date May 18, 1982
- Hitachi, Ltd.
- Saburo Oikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacture of an interdigitated collector structure uti...
- Patent number 4,328,611
- Issue date May 11, 1982
- TRW Inc.
- Alan L. Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
- Patent number 4,186,410
- Issue date Jan 29, 1980
- Bell Telephone Laboratories, Incorporated
- Alfred Y. Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage Schottky barrier diode
- Patent number 4,134,123
- Issue date Jan 9, 1979
- U.S. Philips Corporation
- John M. Shannon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed FET employing ternary and quarternary III-V active layers
- Patent number 4,075,651
- Issue date Feb 21, 1978
- Varian Associates, Inc.
- Lawrence W. James
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a junction type field effect transistor
- Patent number 4,036,672
- Issue date Jul 19, 1977
- Hitachi, Ltd.
- Sadao Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS

J-Fet, i.e.junction field effect transistor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High-density read-only memory fabrication

Method of manufacturing InP junction FETS and junction HEMTS using...

Dual layer surface gate JFET having enhanced gate-channel breakdown...

Vertical transistor device fabricated with semiconductor regrowth

Method of manufacturing semiconductor devices

Method of making a schottky electrode

Method of making a GaAs JFET with self-aligned p-type gate by outdi...

Static induction transistor and manufacturing method of the same

Method of manufacturing semiconductor device

Static induction transistor and manufacturing method of the same

Method for buried channel field effect transistor for microwave and...

Method of fabrication of high voltage IC bopolar transistors operab...

Method of fabricating a junction field effect transistor

Method for fabricating buried channel field-effect transistor for m...

FET with Fermi level pinning between channel and heavily doped semi...

Semiconductor devices controlled by depletion regions

Method of fabricating a junction field effect transistor utilizing...

Vapor phase epitaxial growth of carbon doped layers of Group III-V...

Method for fabricating buried channel field effect transistor for m...

Method of making a gallium arsenide field effect transistor

Method for the formation of buried gates of a semiconductor device...

Selective epitaxial etch planar processing for gallium arsenide sem...

Self-aligned extended epitaxy mesfet fabrication process

Method of forming a metal semiconductor field effect transistor

Method for manufacturing a semiconductor device utilizing selective...

Method for manufacture of an interdigitated collector structure uti...

Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors

High voltage Schottky barrier diode

High speed FET employing ternary and quarternary III-V active layers

Method of making a junction type field effect transistor

Patents Applicationslast 30 patents