Read-only memories programmable only once Semi-permanent stores

Industry

CPC
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Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory with one-time programmable (OTP) cells
- Patent number 12,224,024
- Issue date Feb 11, 2025
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse block unit and fuse block system and memory device
- Patent number 12,224,022
- Issue date Feb 11, 2025
- Windbond Electronics Corp.
- Tsung-I Tu
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) low power circuits and methods for prov...
- Patent number 12,224,023
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Himanshu Saxena
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device including sense amplifier and method for...
- Patent number 12,224,025
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Seong Jun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Bank design with differential bulk bias in eFuse array
- Patent number 12,217,798
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory readout circuit and method
- Patent number 12,217,810
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Min Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse device and method
- Patent number 12,219,755
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min-Shin Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable bitcell for frontside and backside power inte...
- Patent number 12,217,809
- Issue date Feb 4, 2025
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with source line control
- Patent number 12,217,822
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of manufacturing thereof
- Patent number 12,218,047
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fuse memory cell circuit and method
- Patent number 12,211,568
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse link programming cell, programming circuit, control circuit, a...
- Patent number 12,198,771
- Issue date Jan 14, 2025
- Shanghai Huali Integrated Circuit Corporation
- Ying Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with dielectric fin structures
- Patent number 12,198,785
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and apparatus for enabling multiple return material authoriz...
- Patent number 12,183,412
- Issue date Dec 31, 2024
- Altera Corporation
- Sankaran M. Menon
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device data loss prevention
- Patent number 12,183,390
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Hijung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse circuits
- Patent number 12,183,673
- Issue date Dec 31, 2024
- Skyworks Solutions, Inc.
- Bo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-fuse sensing device and operation method thereof
- Patent number 12,185,530
- Issue date Dec 31, 2024
- NANYA TECHNOLOGY CORPORATION
- Chih-Hang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Operating a memory unit using a low-power direct-current (DC) power...
- Patent number 12,183,408
- Issue date Dec 31, 2024
- Ningbo Aura Semiconductor Co., Ltd.
- Arnold J D'Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of stacked lateral semiconductor devices and the resultin...
- Patent number 12,176,209
- Issue date Dec 24, 2024
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
MIM eFuse memory devices and fabrication method thereof
- Patent number 12,176,049
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable fuse using thin film resistor layer, and rela...
- Patent number 12,176,048
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Siow Lee Chwa
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) magnetoresistive random-access memory (...
- Patent number 12,170,105
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory circuit and method
- Patent number 12,165,722
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
One-transistor (1T) one-time programmable (OTP) anti-fuse bitcell w...
- Patent number 12,167,590
- Issue date Dec 10, 2024
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory device and semiconductor memory device...
- Patent number 12,165,726
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Yeongmuk Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse structure, anti-fuse array and memory
- Patent number 12,154,636
- Issue date Nov 26, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Chuangming Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
eFUSE programming feedback circuits and methods
- Patent number 12,150,298
- Issue date Nov 19, 2024
- Texas Instruments Incorporated
- Anand Seshadri
- G11 - INFORMATION STORAGE
Information Patent Grant
High-density and high-voltage-tolerable pure core memory cell
- Patent number 12,148,487
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ku-Feng Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structure having multiple fuse elements
- Patent number 12,137,552
- Issue date Nov 5, 2024
- NANYA TECHNOLOGY CORPORATION
- Wu-Der Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bit cell structure for one-time-programming
- Patent number 12,133,377
- Issue date Oct 29, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE...
- Publication number 20250054558
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Yeongmuk Cho
- G11 - INFORMATION STORAGE
Information Patent Application
DELAY OF INITIALIZATION AT MEMORY DIE
- Publication number 20250044965
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- James S. Rehmeyer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEM ON CHIP (SOC) WITH PROCESSOR AND INTEGRATED FERROELECTRIC ME...
- Publication number 20250029646
- Publication date Jan 23, 2025
- SEAGATE TECHNOLOGY LLC
- Jon D. TRANTHAM
- G11 - INFORMATION STORAGE
Information Patent Application
Multibit High Density Read Only Memory Using Multiple Reference Biases
- Publication number 20250029669
- Publication date Jan 23, 2025
- Taalas Inc.
- Ljubisa Bajic
- G11 - INFORMATION STORAGE
Information Patent Application
DISTRIBUTED POWER SUPPLY SWITCHING CIRCUIT FOR EFUSE MEMORY
- Publication number 20250029668
- Publication date Jan 23, 2025
- Shanghai Huali Integrated Circuit Corporation
- Chuyi HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Read-Only Memory Cell
- Publication number 20250024669
- Publication date Jan 16, 2025
- X-FAB Global Services GmbH
- Rumen Rachinski
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL FUSE ARRAY ARCHITECTURE
- Publication number 20250024670
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Application
BIT CELL STRUCTURE FOR ONE-TIME-PROGRAMMING
- Publication number 20250014661
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PHYSICALLY UNCLONABLE FUNCTION THROUGH GATE HEIGHT TUNING
- Publication number 20250017003
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
READ-ONLY MEMORY METHOD, LAYOUT, AND DEVICE
- Publication number 20250014659
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ku-Feng LIN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH SECURE ACCESS KEY AND ASSOCIATED METHODS...
- Publication number 20250013581
- Publication date Jan 9, 2025
- Lodestar Licensing Group, LLC
- Nathaniel J. Meier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY
- Publication number 20250014660
- Publication date Jan 9, 2025
- YIELD MICROELECTRONICS CORP.
- YU-TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...
- Publication number 20250006283
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Michael Allen Ball
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250006282
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
RADIATION HARDENED E-FUSE MACRO
- Publication number 20240404591
- Publication date Dec 5, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Jason F. Ross
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND INKJET PRINTING ELEMENT SUBSTRATE
- Publication number 20240404612
- Publication date Dec 5, 2024
- Canon Kabushiki Kaisha
- TOSHIO NEGISHI
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES
- Publication number 20240404611
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chrong Jung Lin
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICE
- Publication number 20240397710
- Publication date Nov 28, 2024
- Ememory Technology Inc.
- Lun-Chun CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240395709
- Publication date Nov 28, 2024
- SOCIONEXT INC.
- Yasumitsu SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TIME PROGRAMMING MEMORY INCLUDING FORKSHEET TRANSISTORS AND USI...
- Publication number 20240395863
- Publication date Nov 28, 2024
- EMEMORY TECHNOLOGY INC.
- Lun-Chun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387406
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT
- Publication number 20240386978
- Publication date Nov 21, 2024
- Rohm Co., Ltd.
- Naohiro NOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
METAL FUSE STRUCTURE BY VIA LANDING
- Publication number 20240389312
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bit Selection for Power Reduction in Stacking Structure During Memo...
- Publication number 20240386979
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple Stack High Voltage Circuit for Memory
- Publication number 20240386919
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-DENSITY & HIGH-VOLTAGE-TOLERABLE PURE CORE MEMORY CELL
- Publication number 20240386977
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ku-Feng Lin
- G11 - INFORMATION STORAGE
Information Patent Application
ELEMENT SUBSTRATE
- Publication number 20240379179
- Publication date Nov 14, 2024
- Canon Kabushiki Kaisha
- Suguru Taniguchi
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE DEVICE
- Publication number 20240370622
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE FOR PERFORMING IN-MEMORY COMPUTATION AND OPERATING ME...
- Publication number 20240371453
- Publication date Nov 7, 2024
- Macronix International Co., Ltd.
- Yu-Yu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRICAL FUSE BIT CELL IN INTEGRATED CIRCUIT HAVING BACKSIDE COND...
- Publication number 20240363530
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Ying CHEN
- G11 - INFORMATION STORAGE

Read-only memories programmable only once Semi-permanent stores

Industry

Parent Industries

Current Industry

Sub Industries

Patents Grantslast 30 patents

Memory with one-time programmable (OTP) cells

Fuse block unit and fuse block system and memory device

One time programmable (OTP) low power circuits and methods for prov...

Non-volatile memory device including sense amplifier and method for...

Bank design with differential bulk bias in eFuse array

Memory readout circuit and method

Anti-fuse device and method

One-time programmable bitcell for frontside and backside power inte...

Memory device with source line control

Memory devices and methods of manufacturing thereof

Multi-fuse memory cell circuit and method

Fuse link programming cell, programming circuit, control circuit, a...

Semiconductor memory devices with dielectric fin structures

Method and apparatus for enabling multiple return material authoriz...

Memory device data loss prevention

Fuse circuits

Anti-fuse sensing device and operation method thereof

Operating a memory unit using a low-power direct-current (DC) power...

Formation of stacked lateral semiconductor devices and the resultin...

MIM eFuse memory devices and fabrication method thereof

One-time programmable fuse using thin film resistor layer, and rela...

One time programmable (OTP) magnetoresistive random-access memory (...

Non-volatile memory circuit and method

One-transistor (1T) one-time programmable (OTP) anti-fuse bitcell w...

One-time programmable memory device and semiconductor memory device...

Anti-fuse structure, anti-fuse array and memory

eFUSE programming feedback circuits and methods

High-density and high-voltage-tolerable pure core memory cell

Semiconductor device structure having multiple fuse elements

Bit cell structure for one-time-programming

Patents Applicationslast 30 patents

ONE-TIME PROGRAMMABLE MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE...

DELAY OF INITIALIZATION AT MEMORY DIE

SYSTEM ON CHIP (SOC) WITH PROCESSOR AND INTEGRATED FERROELECTRIC ME...

Multibit High Density Read Only Memory Using Multiple Reference Biases

DISTRIBUTED POWER SUPPLY SWITCHING CIRCUIT FOR EFUSE MEMORY

Programmable Read-Only Memory Cell

VERTICAL FUSE ARRAY ARCHITECTURE

BIT CELL STRUCTURE FOR ONE-TIME-PROGRAMMING

METHOD FOR PHYSICALLY UNCLONABLE FUNCTION THROUGH GATE HEIGHT TUNING

READ-ONLY MEMORY METHOD, LAYOUT, AND DEVICE

SEMICONDUCTOR DEVICE WITH SECURE ACCESS KEY AND ASSOCIATED METHODS...

SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY

RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RADIATION HARDENED E-FUSE MACRO

SEMICONDUCTOR DEVICE AND INKJET PRINTING ELEMENT SUBSTRATE

ONE-TIME-PROGRAMMABLE MEMORY DEVICES

ONE-TIME-PROGRAMMABLE MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

ONE TIME PROGRAMMING MEMORY INCLUDING FORKSHEET TRANSISTORS AND USI...

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR INTEGRATED CIRCUIT

METAL FUSE STRUCTURE BY VIA LANDING

Bit Selection for Power Reduction in Stacking Structure During Memo...

Multiple Stack High Voltage Circuit for Memory

HIGH-DENSITY & HIGH-VOLTAGE-TOLERABLE PURE CORE MEMORY CELL

ELEMENT SUBSTRATE

ANTI-FUSE DEVICE

MEMORY DEVICE FOR PERFORMING IN-MEMORY COMPUTATION AND OPERATING ME...

ELECTRICAL FUSE BIT CELL IN INTEGRATED CIRCUIT HAVING BACKSIDE COND...