Source or drain regions of field-effect devices

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H01L29/0843

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0843Source or drain regions of field-effect devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,923,461
- Issue date Mar 5, 2024
- Denso Corporation
- Kenji Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,916,078
- Issue date Feb 27, 2024
- Samsung Electronics Co., Ltd.
- Sohyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,908,893
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,901,409
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 11,901,410
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split source drain transistor
- Patent number 11,876,057
- Issue date Jan 16, 2024
- Honeywell Federal Manufacturing & Technologies, LLC
- Joshua Joseph Trujillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 11,862,733
- Issue date Jan 2, 2024
- Samsung Electronics Co., Ltd.
- Sunguk Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having 2D channel layer
- Patent number 11,855,150
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Supportive layer in source/drains of FinFET devices
- Patent number 11,855,142
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT)
- Patent number 11,843,046
- Issue date Dec 12, 2023
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 11,837,633
- Issue date Dec 5, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- King Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with epitaxy regions having mixed wavy and non-wavy portions
- Patent number 11,830,772
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor source/drain contacts and methods of forming the same
- Patent number 11,798,943
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yang-Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming semiconductor devices using sacrificial capping...
- Patent number 11,784,236
- Issue date Oct 10, 2023
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 11,784,221
- Issue date Oct 10, 2023
- INNOSCIENC (ZHUHAI) TECHNOLOGY CO., LTD.
- King Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,784,248
- Issue date Oct 10, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 11,764,267
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective liner on backside via and method thereof
- Patent number 11,742,385
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF high-electron-mobility transistors including group III-N stress...
- Patent number 11,710,785
- Issue date Jul 25, 2023
- Cornell University
- Austin Hickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-sheet-based devices with asymmetric source and drain configura...
- Patent number 11,705,488
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with enhanced contact structure and a...
- Patent number 11,664,427
- Issue date May 30, 2023
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon-phosphorous materials
- Patent number 11,649,560
- Issue date May 16, 2023
- Applied Materials, Inc.
- Errol Antonio C Sanchez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for selective deposition of doped semiconductor material
- Patent number 11,637,014
- Issue date Apr 25, 2023
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Transistor having blocks of source and drain silicides near the cha...
- Patent number 11,631,739
- Issue date Apr 18, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
- Patent number 11,605,731
- Issue date Mar 14, 2023
- Chih-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed inductance integrated field effect transistor structure
- Patent number 11,574,854
- Issue date Feb 7, 2023
- National Research Council of Canada
- Nianhua (Frank) Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,575,043
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Feng Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor (HEMT) semiconductor devices with...
- Patent number 11,538,931
- Issue date Dec 27, 2022
- Semiconductor Components Industries, LLC
- Woochul Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,515,410
- Issue date Nov 29, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240145543
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240145535
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- PEI-YU CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
- Publication number 20240120374
- Publication date Apr 11, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICES WITH A CONDUCTIVE COMPONENT TO CONTR...
- Publication number 20240097016
- Publication date Mar 21, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- Publication number 20240096958
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER
- Publication number 20240088228
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yun-Yuan WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...
- Publication number 20240072159
- Publication date Feb 29, 2024
- Manoj Chandrika Reghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047527
- Publication date Feb 8, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240030333
- Publication date Jan 25, 2024
- ROHM CO., LTD.
- Kazuya NAGASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions
- Publication number 20230386924
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME
- Publication number 20230369325
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yang-Cheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE LINER ON BACKSIDE VIA AND METHOD THEREOF
- Publication number 20230369401
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Lin-Yu HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS
- Publication number 20230243068
- Publication date Aug 3, 2023
- Applied Materials, Inc.
- Errol Antonio C Sanchez
- C30 - CRYSTAL GROWTH
Information Patent Application
LATERAL POWER SEMICONDUCTOR DEVICE
- Publication number 20230178592
- Publication date Jun 8, 2023
- NEXPERIA B.V.
- Stefano Dalcanale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230144657
- Publication date May 11, 2023
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...
- Publication number 20230073459
- Publication date Mar 9, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230060757
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20230063463
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230043347
- Publication date Feb 9, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING COMPOUND...
- Publication number 20230036228
- Publication date Feb 2, 2023
- Sony Semiconductor Solutions Corporation
- AKITO IWAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20230022020
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Feng Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230022101
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- PEI-YU CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACTS BETWEEN TRANSISTOR GATES WITH ABBREVIATED INN...
- Publication number 20230009977
- Publication date Jan 12, 2023
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
- Publication number 20220367630
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20220336501
- Publication date Oct 20, 2022
- Samsung Electronics Co., Ltd.
- SOHYEON LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20220320084
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE REGION, ACTIVE REGION ARRAY AND FORMATION METHOD THEREOF
- Publication number 20220310615
- Publication date Sep 29, 2022
- ChangXin Memory Technologies, Inc.
- ChihCheng LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220310788
- Publication date Sep 29, 2022
- Sumitomo Electric Industries, Ltd.
- Koshi HAMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER
- Publication number 20220293735
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yun-Yuan WANG
- H01 - BASIC ELECTRIC ELEMENTS

Source or drain regions of field-effect devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor devices

Semiconductor device and method of forming the same

Semiconductor device and method of manufacturing the same

Semiconductor devices and methods of manufacture

Split source drain transistor

Semiconductor devices

Semiconductor device having 2D channel layer

Supportive layer in source/drains of FinFET devices

High electron mobility transistor (HEMT)

Semiconductor device and manufacturing method therefor

FinFETs with epitaxy regions having mixed wavy and non-wavy portions

Transistor source/drain contacts and methods of forming the same

Methods for forming semiconductor devices using sacrificial capping...

Semiconductor device and manufacturing method therefor

Group III-V semiconductor structures having crystalline regrowth la...

Gallium nitride transistor with a doped region

Semiconductor device and fabricating method thereof

Selective liner on backside via and method thereof

RF high-electron-mobility transistors including group III-N stress...

Nano-sheet-based devices with asymmetric source and drain configura...

Vertical semiconductor device with enhanced contact structure and a...

Method for forming silicon-phosphorous materials

Methods for selective deposition of doped semiconductor material

Transistor having blocks of source and drain silicides near the cha...

Epitaxial structure of N-face group III nitride, active device, and...

Distributed inductance integrated field effect transistor structure

Semiconductor device and manufacturing method of the same

High-electron-mobility transistor (HEMT) semiconductor devices with...

Group III-V semiconductor structures having crystalline regrowth la...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF

COMPOUND SEMICONDUCTOR DEVICES WITH A CONDUCTIVE COMPONENT TO CONTR...

SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES

SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER

SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

FinFETs With Epitaxy Regions Having Mixed Wavy and Non-Wavy Portions

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME

SELECTIVE LINER ON BACKSIDE VIA AND METHOD THEREOF

METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS

LATERAL POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING COMPOUND...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SOURCE/DRAIN CONTACTS BETWEEN TRANSISTOR GATES WITH ABBREVIATED INN...

SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES

SEMICONDUCTOR DEVICES

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

ACTIVE REGION, ACTIVE REGION ARRAY AND FORMATION METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER