with a pocket or a lightly doped drain selectively formed at the side of the gate

Industry

CPC
H01L29/66492

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66492with a pocket or a lightly doped drain selectively formed at the side of the gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Miniaturized transistor structure with controlled dimensions of sou...
- Patent number 11,972,983
- Issue date Apr 30, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniaturized transistor structure with controlled dimensions of sou...
- Patent number 11,973,120
- Issue date Apr 30, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor element, ternary inverter apparatus comprising same, and...
- Patent number 11,908,863
- Issue date Feb 20, 2024
- UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory devices with asymmetrical floating gates
- Patent number 11,901,425
- Issue date Feb 13, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device with three-dimensional half flash structure and...
- Patent number 11,888,074
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with implant screen
- Patent number 11,881,528
- Issue date Jan 23, 2024
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with reduced gate fringe area and method o...
- Patent number 11,876,096
- Issue date Jan 16, 2024
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel stop and well dopant migration control implant for reduced...
- Patent number 11,869,956
- Issue date Jan 9, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with doped region
- Patent number 11,855,176
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,855,183
- Issue date Dec 26, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Wei Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming programmable memory
- Patent number 11,832,444
- Issue date Nov 28, 2023
- United Microelectronics Corp.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 11,817,499
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,817,500
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and related apparatus for integrating electronic memory in a...
- Patent number 11,817,488
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,804,488
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jen-Chih Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and methods thereof
- Patent number 11,799,014
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple wells and method of making
- Patent number 11,769,812
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure
- Patent number 11,749,741
- Issue date Sep 5, 2023
- United Microelectronics Corp.
- Zhe Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode amplifier optimization
- Patent number 11,742,408
- Issue date Aug 29, 2023
- Skyworks Solutions, Inc.
- Yun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with reduced gate fringe area and method o...
- Patent number 11,710,740
- Issue date Jul 25, 2023
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with inverter and method for fabricating the same
- Patent number 11,705,499
- Issue date Jul 18, 2023
- NANYA TECHNOLOGY CORPORATION
- Chun-Chi Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable memory and forming method thereof
- Patent number 11,706,915
- Issue date Jul 18, 2023
- United Microelectronics Corp.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage extended drain MOSFET (EDMOS) devices in a high-k meta...
- Patent number 11,705,455
- Issue date Jul 18, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Thorsten E. Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced flicker noise
- Patent number 11,688,789
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,688,771
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep source and drain for transistor structures with back-side cont...
- Patent number 11,688,780
- Issue date Jun 27, 2023
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multi-layered gate spacers
- Patent number 11,682,711
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused tip extension transistor
- Patent number 11,664,452
- Issue date May 30, 2023
- Intel Corporation
- Pratik A. Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type field effect transistor and method for fabricating the same
- Patent number 11,664,425
- Issue date May 30, 2023
- United Microelectronics Corp.
- Shi-You Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device with three-dimensional half flash structure and...
- Patent number 11,658,248
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SONOS MEMORY
- Publication number 20240145583
- Publication date May 2, 2024
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Tianquan SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash Memory Device with Three-Dimensional Half Structure and Metho...
- Publication number 20240136444
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240136352
- Publication date Apr 25, 2024
- RENESAS ELECTRONICS CORPORATION
- Natsumi IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NATIVE NMOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240105844
- Publication date Mar 28, 2024
- RICHTEK TECHNOLOGY CORPORATION
- Ying-Shiou Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MV DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240096992
- Publication date Mar 21, 2024
- Shanghai Huali Integrated Circuit Corporation
- Qiwei WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...
- Publication number 20240088262
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND RELATED APPARATUS FOR INTEGRATING ELECTRONIC MEMORY IN A...
- Publication number 20240021692
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230420560
- Publication date Dec 28, 2023
- Vanguard International Semiconductor Corporation
- Yu-Hao HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230411495
- Publication date Dec 21, 2023
- UNITED MICROELECTRONICS CORP.
- Ching-Chung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230411489
- Publication date Dec 21, 2023
- UNITED MICROELECTRONICS CORP.
- Wen-Wen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230402457
- Publication date Dec 14, 2023
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230387112
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jen-Chih Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING GATE-ALL-AROUND (GAA) STRUCTURE
- Publication number 20230387249
- Publication date Nov 30, 2023
- Peking University
- Ming LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230378357
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE WELLS
- Publication number 20230378296
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20230378359
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230378315
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Myoungsoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHODS THEREOF
- Publication number 20230369450
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Anhao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED MOSFET WITH SUPERIOR RF PERFORMANCE
- Publication number 20230352583
- Publication date Nov 2, 2023
- QUALCOMM Incorporated
- Abhijeet PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230307454
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Honghai He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED FLICKER NOISE
- Publication number 20230299171
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE MEMORY AND FORMING METHOD THEREOF
- Publication number 20230301083
- Publication date Sep 21, 2023
- UNITED MICROELECTRONICS CORP.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture
- Publication number 20230268416
- Publication date Aug 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSED TIP EXTENSION TRANSISTOR
- Publication number 20230253499
- Publication date Aug 10, 2023
- Intel Corporation
- Pratik A. PATEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash Memory Device with Three Dimensional Half Flash Structure and...
- Publication number 20230253508
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of semiconductor structure
- Publication number 20230231033
- Publication date Jul 20, 2023
- UNITED MICROELECTRONICS CORP.
- Shin-Hung LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...
- Publication number 20230230975
- Publication date Jul 20, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit Structure and Method for Reducing Electronic Noises
- Publication number 20230215916
- Publication date Jul 6, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Ching-Hung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230178613
- Publication date Jun 8, 2023
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DUAL WELLS
- Publication number 20230178652
- Publication date Jun 8, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Xiang-Zheng BO
- H01 - BASIC ELECTRIC ELEMENTS

with a pocket or a lightly doped drain selectively formed at the side of the gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Miniaturized transistor structure with controlled dimensions of sou...

Miniaturized transistor structure with controlled dimensions of sou...

Transistor element, ternary inverter apparatus comprising same, and...

Non-volatile memory devices with asymmetrical floating gates

Flash memory device with three-dimensional half flash structure and...

Transistor with implant screen

Field effect transistors with reduced gate fringe area and method o...

Channel stop and well dopant migration control implant for reduced...

FinFET structure with doped region

Method for manufacturing semiconductor device

Method for forming programmable memory

P-type strained channel in a fin field effect transistor (FinFET) d...

Method of manufacturing a semiconductor device and a semiconductor...

Method and related apparatus for integrating electronic memory in a...

Semiconductor device and method

Gate structure and methods thereof

Semiconductor device having multiple wells and method of making

Method for forming semiconductor structure

Cascode amplifier optimization

Field effect transistors with reduced gate fringe area and method o...

Semiconductor device with inverter and method for fabricating the same

Programmable memory and forming method thereof

High voltage extended drain MOSFET (EDMOS) devices in a high-k meta...

Semiconductor device with reduced flicker noise

Method for manufacturing semiconductor device

Deep source and drain for transistor structures with back-side cont...

Semiconductor device having multi-layered gate spacers

Diffused tip extension transistor

P-type field effect transistor and method for fabricating the same

Flash memory device with three-dimensional half flash structure and...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SONOS MEMORY

Flash Memory Device with Three-Dimensional Half Structure and Metho...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NATIVE NMOS DEVICE AND MANUFACTURING METHOD THEREOF

MV DEVICE AND METHOD FOR MANUFACTURING SAME

CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...

METHOD AND RELATED APPARATUS FOR INTEGRATING ELECTRONIC MEMORY IN A...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

Semiconductor Device and Method

METHOD FOR FABRICATING GATE-ALL-AROUND (GAA) STRUCTURE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE HAVING MULTIPLE WELLS

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

GATE STRUCTURE AND METHODS THEREOF

ENHANCED MOSFET WITH SUPERIOR RF PERFORMANCE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH REDUCED FLICKER NOISE

PROGRAMMABLE MEMORY AND FORMING METHOD THEREOF

Semiconductor Devices and Methods of Manufacture

DIFFUSED TIP EXTENSION TRANSISTOR

Flash Memory Device with Three Dimensional Half Flash Structure and...

Manufacturing method of semiconductor structure

SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...

Circuit Structure and Method for Reducing Electronic Noises

SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

TRANSISTORS WITH DUAL WELLS