2970111

Information

• Patent Grant
• 2970111

• References
• Source

• Patent Number

  2,970,111

• Date Filed

  Not available

• Date Issued

  Tuesday, January 31, 1961
  64 years ago

• CPC

  • H01L21/02579 - P-type
  • C30B13/04 - Homogenisation by zone-levelling
  • C30B13/10 - with addition of doping material
  • C30B25/00 - Single-crystal growth by chemical reaction of reactive gases
  • C30B29/06 - Silicon
  • D06M13/123 - Polyaldehydes Polyketones
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02381 - Silicon, silicon germanium, germanium
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • Y10S117/906 - Special atmosphere other than vacuum or inert
  • Y10S148/107 - Melt
  • Y10S252/95 - Doping agent source material

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices