3354008

Information

• Patent Grant
• 3354008

• References
• Source

• Patent Number

  3,354,008

• Date Filed

  Not available

• Date Issued

  Tuesday, November 21, 1967
  57 years ago

• CPC

  • H01L21/31612 - on a silicon body
  • C23C8/00 - Solid state diffusion of only non-metal elements into metallic material surfaces Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating
  • C23C16/402 - Silicon dioxide
  • H01L21/02126 - the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements
  • H01L21/02129 - the material being boron or phosphorus doped silicon oxides
  • H01L21/02263 - deposition from the gas or vapour phase
  • H01L21/02271 - deposition by decomposition or reaction of gaseous or vapour phase compounds
  • H01L21/2255 - the applied layer comprising oxides only
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • Y10S148/015 - Capping layer
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/043 - Dual dielectric
  • Y10S148/062 - Gold diffusion
  • Y10S148/079 - Inert carrier gas
  • Y10S148/118 - Oxide films
  • Y10S148/144 - Shallow diffusion
  • Y10S148/151 - Simultaneous diffusion
  • Y10S148/173 - Washed emitter

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 023 - Chemistry: physical processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices