3447977

Information

• Patent Grant
• 3447977

• References
• Source

• Patent Number

  3,447,977

• Date Filed

  Not available

• Date Issued

  Tuesday, June 3, 1969
  56 years ago

• CPC

  • C30B29/06 - Silicon
  • C23C16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating
  • C30B25/02 - Epitaxial-layer growth
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02381 - Silicon, silicon germanium, germanium
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/02579 - P-type
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • Y10S117/90 - Apparatus characterized by composition or treatment thereof
  • Y10S117/906 - Special atmosphere other than vacuum or inert
  • Y10S148/052 - Face to face deposition

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 423 - Chemistry of inorganic compounds