3451866

Information

• Patent Grant
• 3451866

• References
• Source

• Patent Number

  3,451,866

• Date Filed

  Not available

• Date Issued

  Tuesday, June 24, 1969
  57 years ago

• CPC

  • H01L23/291 - Oxides or nitrides or carbides
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L24/05 - of an individual bonding area
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L2224/04042 - Bonding areas specifically adapted for wire connectors
  • H01L2224/48463 - the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
  • H01L2924/12036 - PN diode
  • H01L2924/12043 - Photo diode
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/043 - Dual dielectric
  • Y10S148/098 - Layer conversion
  • Y10S148/151 - Simultaneous diffusion
  • Y10S438/919 - Compensation doping
  • Y10S438/965 - Shaped junction formation

• US Classifications

  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process