3721583

Information

• Patent Grant
• 3721583

• References
• Source

• Patent Number

  3,721,583

• Date Filed

  Not available

• Date Issued

  Tuesday, March 20, 1973
  51 years ago

• CPC

  • H01L21/02392 - Phosphides
  • H01L21/02395 - Arsenides
  • H01L21/02461 - Phosphides
  • H01L21/02463 - Arsenides
  • H01L21/02507 - Alternating layers
  • H01L21/02543 - Phosphides
  • H01L21/02546 - Arsenides
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • Y10S117/902 - Specified orientation, shape, crystallography, or size of seed or substrate
  • Y10S148/005 - Antimonides of gallium or indium
  • Y10S148/056 - Gallium arsenide
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/067 - Graded energy gap
  • Y10S148/072 - Heterojunctions
  • Y10S148/129 - Pulse doping
  • Y10S438/936 - Graded energy gap

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process