3729341

Information

• Patent Grant
• 3729341

• References
• Source

• Patent Number

  3,729,341

• Date Filed

  Not available

• Date Issued

  Tuesday, April 24, 1973
  52 years ago

• CPC

  • H01L21/02392 - Phosphides
  • H01L21/02395 - Arsenides
  • H01L21/0242 - Crystalline insulating materials
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • Y10S148/016 - Catalyst
  • Y10S148/025 - Deposition multi-step
  • Y10S148/049 - Equivalence and options
  • Y10S148/056 - Gallium arsenide
  • Y10S148/059 - Germanium on silicon or Ge-Si on III-V
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/072 - Heterojunctions
  • Y10S148/079 - Inert carrier gas
  • Y10S148/097 - Lattice strain and defects
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S438/903 - Catalyst aided deposition
  • Y10S438/935 - Gas flow control

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process
  • 502 - Catalyst, solid sorbent, or support therefor: product or process of making