3874952

Information

• Patent Grant
• 3874952

• References
• Source

• Patent Number

  3,874,952

• Date Filed

  Not available

• Date Issued

  Tuesday, April 1, 1975
  49 years ago

• CPC

  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L21/02395 - Arsenides
  • H01L21/02543 - Phosphides
  • H01L21/02546 - Arsenides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/02581 - Transition metal or rare earth elements
  • H01L21/02625 - using melted materials
  • H01L21/02628 - using solutions
  • Y10S148/051 - Etching
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/067 - Graded energy gap
  • Y10S148/072 - Heterojunctions
  • Y10S148/084 - Ion implantation of compound devices
  • Y10S148/107 - Melt
  • Y10S148/119 - Phosphides of gallium or indium
  • Y10S148/135 - Removal of substrate
  • Y10S438/925 - Fluid growth doping control

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process