3900943

Information

• Patent Grant
• 3900943

• References
• Source

• Patent Number

  3,900,943

• Date Filed

  Not available

• Date Issued

  Tuesday, August 26, 1975
  49 years ago

• CPC

  • C30B29/06 - Silicon
  • C30B25/02 - Epitaxial-layer growth
  • H01L21/0237 - Materials
  • H01L21/02532 - Silicon, silicon germanium, germanium
  • H01L21/0262 - Reduction or decomposition of gaseous compounds
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/04 - characterised by their crystalline structure
  • H01L31/00 - Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof
  • H01L31/03682 - including only elements of the fourth group of the Periodic System
  • Y02E10/546 - Polycrystalline silicon PV cells
  • Y10S117/914 - Crystallization on a continuous moving substrate or cooling surface
  • Y10S148/054 - Flat sheets-substrates
  • Y10S148/068 - Graphite masking
  • Y10S148/115 - Orientation
  • Y10S148/12 - Photocathodes-Cs coated and solar cell
  • Y10S148/122 - Polycrystalline
  • Y10S148/135 - Removal of substrate
  • Y10S148/15 - Silicon on sapphire SOS

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 136 - Batteries: thermoelectric and photoelectric
  • 148 - Metal treatment
  • 257 - Active solid-state devices