TECHNICAL FIELD
The present disclosure relates to an electronic device and more specifically, to an integrated circuit package that includes a sensor disposed in a capped circular cavity.
BACKGROUND
Cavity integrated circuit (IC) packages are used as sensor packages to measure various physical properties of an environment such as humidity, temperature, optics, sound, pressure, adverse environmental conditions, etc. Thus, the cavity packages include a sensor disposed in a cavity to sense the physical property and other circuitry to process the sensed physical property. In order for the sensor to function properly, the cavity must be free from any substance (e.g. solder, mold compound, etc.). Any substance that enters the cavity during fabrication of the cavity package can compromise the operation of the sensor.
SUMMARY
In described examples, an electronic device includes a substrate and a die having an active surface disposed on the substrate. A sensor is in communication with the active surface of the die and a ring is disposed on the die and encircles the sensor. The ring includes a cylindrical wall and a cap, where the cylindrical wall has an open top and the cap has a partial circular shape that extends beyond each side of the cylindrical wall, A cover is disposed on the cap such that the cover closes off the open top of the ring to form a cavity inside the ring to prevent foreign substance from entering the cavity. A mold compound covers the die and the cover, and abuts an outer surface of the cylindrical wall.
In another described example, a method includes providing a die including a sensor. A ring is deposited on the die and encircles the sensor. A cover is deposited on a top of the ring and closes off an open top of the ring thereby forming a cavity inside the ring. The die is placed on a substrate and a mold compound is formed over the die, the ring, and the cover, and abuts an outer surface of the ring.
In still another described example, a method includes fabricating a die assembly including providing a die having an active surface and a sensor. A stress relief layer is deposited on the active surface of the die and a metal structure is deposited on the stress relief layer. A photoresist material is deposited layer over the die and is patterned to form a ring shaped opening on the metal structure. Metal is electroplated on the metal structure in the ring shaped opening to form a metal ring. A cover is deposited on a top of the ring. The cover closes off an open top of the ring thereby forming a cavity inside the ring. The die assembly is placed on a substrate and a mold compound is formed over the die, the ring, and the cover, and abuts an outer surface of the ring.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross section view of an example electronic device.
FIG. 2 is a top view of a wafer that includes dies.
FIG. 3 illustrates a cross section view of a singulated die from the wafer in FIG. 2 in the early stages of fabrication of a die assembly.
FIG. 4 illustrates a cross section view of the singulated die in FIG. 3 that includes a sensor integrated into the die.
FIG. 5 illustrates a cross section view of the die assembly in FIG. 4 including an optional die polymer layer.
FIG. 6 illustrates a cross section view of the die assembly of FIG. 5 undergoing a first optional material deposition process.
FIG. 7 illustrates a cross section view of the die assembly of FIG. 6 undergoing a second optional material deposition process.
FIG. 8 illustrates a side view of the die assembly of FIG. 7 undergoing a photoresist material layer patterning.
FIG. 9 illustrates a side view of the die assembly of FIG. 8 undergoing an electroplating process.
FIGS. 10A and 10B are close up, cross section views of the electroplating process in FIG. 9.
FIG. 11 illustrates a cross section view of the die assembly of FIG. 9 after undergoing an etch process to strip the photoresist material layer and partially etch a seed layer.
FIG. 12 illustrates a cross-sectional view of the die assembly of FIG. 11 after undergoing deposition of a solder ball.
FIG. 13 illustrates a cross-sectional view of the die assembly of FIG. 12 after undergoing a reflow process.
FIG. 14 illustrates a cross section view of a leadframe based substrate in the early stages of assembly of an electronic device.
FIG. 15 illustrates a cross section view of the electronic device of FIG. 12 undergoing deposition of a die attach material.
FIG. 16 illustrates a cross section view of the electronic device with the die assembly of FIG. 11 attached to the leadframe.
FIG. 17 illustrates a cross section view of the electronic device of FIG. 14 undergoing a wire bonding process.
FIG. 18 illustrates a cross section view of the electronic device of FIG. 15 after undergoing formation of a mold compound.
FIG. 19 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 19 that does not include the optional die polymer layer.
FIG. 20 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 19 that does not include an optional polymer or metal layer.
FIG. 21 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 19 that does not include an optional plated metal layer.
FIG. 22 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 19 that does not include the optional die polymer layer and the optional polymer or metal layer.
FIG. 23 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 19 that does not include the optional die polymer layer and the optional plated metal structure.
FIG. 24 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 19 that does not include the optional polymer or metal layer and the optional plated metal structure.
FIG. 25 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 19 that does not include the optional die polymer layer, the optional polymer or metal layer, and the optional plated metal structure.
DETAILED DESCRIPTION
Cavity integrated circuit (IC) packages are used as sensor packages to measure various physical properties of an environment such as humidity, temperature, optics, sound, pressure, adverse environmental conditions, etc. Thus, the cavity packages include a sensor disposed in a cavity to sense the physical property and other circuitry to process the sensed physical property. In order for the sensor to function properly, the cavity must be free from any substance (e.g. solder, mold compound, etc.).
The cavity is in the form of a ring comprised of a plated circular wall. In some cavity packages the cavity is open. In other words, the top of the cavity is open, referred to as an open cavity package (OCP). Thus, the sensor inside the cavity is exposed to the external environment. The remaining package circuitry outside the cavity, however, is covered by a mold compound to protect the outside circuitry from the external environment.
In other cavity packages, the top of the cavity is covered or closed off, referred to as a closed (covered) cavity package (CCP). Current processes of covering the top of the cavity include depositing solder across the top of the cavity. During a reflow process, however, solder flows down an inside surface of the cavity wall into the cavity area. In other processes, plated solder domes or solder paste domes fail to completely close off the top opening of the cavity thereby leaving openings in the cavity cover or dome. As a result, during formation of the molding compound, the molding compound can enter the cavity through the openings of the cover or dome thereby compromising the operation of the sensor.
Disclosed herein is an electronic device and more specifically, a cavity integrated circuit (IC) package and method of fabricating the package that overcomes the challenges described above. The cavity IC package includes a ring (e.g., plated metal ring) having a cylindrical wall and a partially circular or semi-circular cap. Thus, a cross-section view of the ring and cap essentially has a mushroom-shape. The ring is positioned on a die and a sensor is disposed on the die inside the ring. A solder based cover or lid is disposed over a top opening of the ring. The cover attaches to a top of the semi-circular cap and during a reflow process, the solder based cover flows to adhere to the top of the cap and seal off the top opening of the ring. Thus, a cavity is formed inside the ring and cover where the sensor resides.
During formation of a molding compound, the ring, the semi-circular cap, and the solder based cover prevent the molding compound from entering the cavity thereby protecting the sensor from external substances. The ring may be composed of metal or non-metal materials, and they may be grown on the semiconductor die using a plating process or printing process using ink containing metal or non-metal materials or may be manufactured separately from the semiconductor die and coupled to the semiconductor die using an adhesive.
FIG. 1 is a cross-section view of an example electronic device 100 comprised of a substrate 102, a die 104 disposed on the substrate 102, a ring 106 disposed on the die 104, a sensor 108 disposed on the die 104 and inside the ring 106, wire bonds 110, and a mold compound 112. The electronic device 100 can be comprised of an integrated circuit (IC) that includes a cavity to house the sensor 108 including, but not limited to a Quad Flat No-Lead (QFN) package, a Quad-Flat Package (QFP), Dual In-Line Package (DIP), Single In-Line Package (SIP), a Ball-Grid Array (BGA) package, etc. Although the example electronic device 100 illustrated in FIG. 1 shows one ring 106 disposed on the die 104 having a sensor 108 disposed inside the ring 106, in other examples the electronic device 100 can include multiple sensors where multiple rings are disposed on the die and a sensor is disposed in each ring. Thus, the electronic device illustrated in FIG. 1 is for illustrative purposes only and is not intended to limit the scope of the invention.
The substrate 102 is comprised of a leadframe that includes a die pad 114 and conductive terminals 116 (e.g., leads, contacts). In alternative examples, the substrate may be comprised of a laminate substrate or a printed circuit board based substrate. For illustrative purposes only, a leadframe based substrate will be described herein and illustrated in the drawings. The die pad 114 may be comprised of a thermal pad that is exposed on an attachment side 118 of the electronic device 100. The thermal pad creates an efficient heat path away from the electronic device 100 to a board (e.g., printed circuit board). In addition, the exposed thermal or die pad 114 also enables a ground connection to the board.
The die 104 attaches to the die pad 114 via a die attach material 120. In one example, the die 104 may optionally include a die polymer layer (e.g., polyimide) 122 disposed on an active (wire bonding) surface 124 of the die 104. The die polymer layer 122 mitigates stress (stress relief layer) between the die 104 and the ring 106. The die polymer layer 122 may also enhance the sensing function and properties of the die and the sensor 108 in some applications such as humidity sensing.
The ring 106 is formed on the die 104 via an electro-plating process as explained below and is comprised of a cylindrical wall 126 with an open top and a cap 128. The ring 106 may be formed from a metal such as but not limited to copper, aluminum, nickel, iron, etc. The cap 128 is integrally formed with the cylindrical wall 126 and extends from a top portion of the cylindrical wall 126. The cap 128 has a shape of a partial circle or a semi-circle and thus extends beyond each side of the cylindrical wall 126. Thus, a cross-section view of the ring 106 has a mushroom shape (see FIG. 10B).
The electronic device 100 further includes a cover 130 that covers or closes off the open top of the ring 106. The cover 130 is made from a solder based material and may be comprised of a solder ball, solder paste, etc. For illustrative purposes only, the example described herein will include a cover comprised of a solder ball. A diameter of the solder ball may range in size based on the diameter of the ring 106, which is based on the type of sensor 108 used in the electronic device 100. For example, the solder ball may range from 0.05 mm to 0.80 mm. During fabrication, described further below, the solder ball is placed on the cap 128 and during reflow, the solder ball spreads to cover the cap 128 thereby closing of the top opening of the ring 106. As a result, a cavity 132 is formed inside the ring 106.
In one example, the ring 106 may be formed directly on the die 104 or in another example, the ring 106 may be formed on the optional die polymer layer 122. Dimensions of the ring 106, and thus the cavity 132, are specific to the sensing application and the size of the sensor 108. For example, the ring 106 may have a height (e.g., 70 um-160 um) such that a top of the cap 128 extends above a maximum height H of the wire bonds 110 and may be limited only by the wire bonding capability to produce a low profile wire bond. The ring 106 may have an inner diameter (e.g., 100 um-500 um) that is equal to or greater than a sensor region of the die 104 to prevent affecting the sensor performance.
In addition, one or more layers may optionally be disposed between the ring 106 and the die 104 to mitigate stress (stress relief layer) between the ring 106 and the die 104 and/or for enhancing the sensing properties of the electronic device 100. For example, a plated metal structure 134 having a thickness ranging from 3 um to 10 um may be deposited directly on the die 104 or in another example, deposited on the die polymer layer 122 prior to deposition of the ring 106. In addition, a polymer or metal layer 136 may be deposited directly on the die 104 or in another example, on the die polymer layer 122 prior to deposition of either the ring 106 or the plated metal structure 134 if a seed layer is desired. Thus, different combinations of polymers and metal stacks can be used for stress mitigation and/or to enhance the sensing properties of the electronic device 100. The polymer or metal layer 136 may be comprised of a non-photo-definable or photo-definable chemistry with either positive or negative photo activation. A combination of photo-active, non-photo-active, resist polymers, and electroplated copper structures can be utilized to achieve the desired dimensions and functionality as needed by the application for stress mitigation and/or performance enhancements in sensing.
The sensor 108 is in communication with the active surface 124 of the die 104 and is disposed inside the ring 106. Thus, the ring 106 encircles the sensor 108. In one example, at a wafer level the sensor 108 is integrated into the active surface 124 of the die 104 such that a top surface of the sensor 108 is substantially flush with the active surface 124 of the die 104. In another example, the sensor 108 can be partially integrated into the active surface 124 of the die 104 such that the sensor 108 partially extends above the active surface 124 of the die 104. In still yet another example, the sensor 108 can be disposed on the active surface 124 of the die 104 such that the sensor 108 is fully above the die 104. The sensor 108 may be configured to sense any of a variety of physical properties, such as humidity, light, sound, pressure, bulk acoustic waves, stress, temperature, current, voltage, power, motion, acceleration, magnetic fields, and other physical properties. The active surface 124 of the die 104 may include other circuitry coupled to the sensor 108 that is configured to receive and process signals from the sensor 108 in an appropriate manner. For example, a probing element (not shown) that interrogates the sensor 108 to produce a signal can be disposed below the sensor 108 in the form of an interdigitated lateral comb pattern, across or partially around the sensor 108, or sandwiched above and below the sensor 108. The interrogating signal can be in the form of frequency, current, resistance, capacitance, etc. The wire bonds 110 provide a connection between the active or wire bond surface 124 of the die 104 and the conductive terminals 116.
In the illustrated example, the mold compound 112 covers all but one surface of the leadframe 102, where the one surface not covered faces away from the electronic device 100. In addition, the mold compound 112 encapsulates the die 104, the ring 106, the cover 130, and the wire bonds 110. As illustrated in FIG. 1, the mold compound 112 is formed such that the mold compound 112 abuts an outer surface of the ring 106 and extends above the cover 130 thereby encapsulating the ring 106 and the cover 130. The formation of the ring 106 and the cover 130, thus, prevents the mold compound 112 from entering an interior of the ring 106.
FIGS. 2-18 illustrate a fabrication process associated with the formation of the electronic device 100 illustrated in FIG. 1. Specifically, FIGS. 2-12 illustrate a fabrication process associated with the formation a die assembly for the electronic device 100 illustrated in FIG. 1 and FIGS. 14-18 illustrate a fabrication process associated with the process of placing the die assembly on a substrate and a molding process to thereby fabricate the electronic device 100 illustrated in FIG. 1. Though depicted sequentially as a matter of convenience, at least some of the actions shown can be performed in a different order and/or performed in parallel. Alternatively, some implementations may perform only some of the actions shown. Still further, although the example illustrated in FIGS. 2-18 is an example method illustrating the example configuration of FIG. 1, other methods and configurations are possible. It is understood that although the method illustrated in FIGS. 2-18 depicts the fabrication process of a single electronic device, the process applies to an array electronic devices. Thus, after fabrication of the array of electronic devices the array is singulated to separate each electronic device 100 from the array.
Referring to FIGS. 2-12, the fabrication process of a die assembly for the electronic device 100 illustrated in FIG. 1 begins with a wafer 200, as illustrated in FIG. 2. Specifically, FIG. 2 is a schematic diagram of a wafer 200, in accordance with various examples. For example, the wafer 200 may be a silicon wafer. The wafer 200 comprises multiple dies 202. The manufacturing techniques described below may be performed on individual dies 202 (post-singulation), or the techniques may be more efficiently performed on a mass scale, e.g., simultaneously on multiple dies 202 of the wafer 200 (pre-singulation). For convenience and clarity, the remaining drawings show one die 202, with the understanding that the processes described herein as being performed on the die 202 may also be performed (e.g., sequentially performed, simultaneously performed) on the remaining dies 202 of the wafer 200.
FIG. 3 illustrates a cross section view of a single die 202 singulated from the wafer 200. A sensor 204 is integrated into an active (wire bonding) surface 206 of the die 202 such that a top surface of the sensor 204 is substantially flush with the active surface 206 of the die 202 resulting in the configuration of FIG. 4. As explained above, however, the sensor 204 can be partially integrated into the active surface 206 of the die 202 or can be disposed on the active surface 206 of the die 202. For example, in an application where the sensor 204 is configured to sense humidity, the sensor 204 is integrated into the die 202 as a lateral capacitor. The lateral capacitor uses a transducer medium (e.g., polyimide) on top as a functionalized material that will change a di-electric constant with varying levels of humidity resulting in a change of capacitance.
An optional die polymer layer 208 (e.g., polyimide) is deposited on the active surface 206 of the die 202 resulting in the configuration in FIG. 5. The configuration in FIG. 5 undergoes a first deposition process 300 to deposit and pattern an optional stress relief polymer or metal layer 210 on the die 202 or on the optional die polymer layer 208 resulting in the configuration in FIG. 6. The configuration in FIG. 6 undergoes a second deposition process 310 to deposit an optional metal structure (e.g., copper) 212 having a thickness ranging from 3 um to 10 um on the stress relief polymer or metal layer 210 resulting in the configuration in FIG. 7. Those familiar in the art of electroplating layers on a wafer will recognize that a conductive seed layer must be deposited to blanket the wafer effectively creating an electrically conductive surface to initiate the electro-chemical deposition of the metal. Once electroplating the structures of interest has been completed this seed layer will be etched away. For simplicity only the major metal structures are shown in each figure with an understanding they were plated using a seed metal such as but not limited to Ti, TiW, TiW+Cu.
Referring to FIG. 8, a photoresist material layer 214 overlies the die 202 and is patterned and developed to expose a ring shaped opening 216 in the photoresist material layer 214 in accordance with a pattern. The photoresist material layer 214 can have a thickness that varies in correspondence with the wavelength of radiation used to pattern the photoresist material layer 214. The photoresist material layer 214 may be formed over the die 202 via spin-coating or spin casting deposition techniques, selectively irradiated (e.g., via deep ultraviolet (DUV) irradiation) and developed to form the ring shaped opening 216.
The configuration in FIG. 8 undergoes an electro-plating process 320 to deposit metal plating (e.g., copper) 218 in the ring shaped opening 216 resulting in the configuration in FIG. 9. FIGS. 10A and 10B illustrate close-up cross section views of the plating process as the metal plating 218 fills the ring shaped opening 216 in the photoresist material layer 214. Referring to FIG. 10A, while the metal plating 218 is being plated within walls of the photoresist material layer 214, the metal plating 218 plates in a vertical direction as indicated by the vertical arrow. Once the metal plating 218 reaches a top surface of the photoresist material layer 214, the metal plating 218 continues to plate in the vertical direction indicated by the arrow. The metal plating 218, however, also plates in a horizontal direction indicated by the double arrow, see FIG. 10B. Thus, once the metal plating 218 reaches the top of the photoresist material layer 214, the metal plating 218 plates both vertically and horizontally on a surface of the photoresist material layer 214.
The metal plating 218 forms a ring 220 on the die 202 that is comprised of a cylindrical wall 222 and a cap 224. The cap 224 has a shape of a partial circle or a semi-circle and extends beyond each side of the cylindrical wall 222. Thus, a cross-section view of the ring 220 has a mushroom shape as illustrated in FIGS. 9 and 10B. In addition, a secondary plating option can be utilized before stripping off the photoresist to help passivate the metal structure. Plating finishes such as OSP, Matte Sn, SnAg, electroless Sn, electroless Ag, Ni, NiPd, NiAu, NiPdAu, and electroless NiAu (ENiG) etc. are well known techniques familiar with electronic assembly.
Once the plating process 320 is complete, the photoresist material layer 214 is removed via a solvent stripping process 330. In addition, a portion of the metal structure 212, which blankets the entire wafer (not shown for simplicity) is etched during an etching process such that the metal structure 212 extending beyond the cylindrical wall 222 of the ring 220 is left intact resulting in the configuration in FIG. 11. The metal structure 212 distributes the weight of the ring 220 thereby spreading the stress from the ring 220 to prevent cracking in the stress relief polymer or metal layer 210.
Flux 226 and a solder ball 228 are deposited on a top portion of the cap 224 resulting in the configuration in FIG. 12. The flux 226 extends from the top of the cap 224 to an inside surface of the cap 224. The configuration in FIG. 12 undergoes a reflow process 340. During the reflow process 340, the solder ball 228 is heated to a predetermined temperature and spreads over the top of the cap 224 and down the inside surface of the cap 224 thereby forming a cover 230 over the ring 220 resulting in the configuration in FIG. 13. More specifically, during the reflow process 340, the solder ball 228 is heated to a first temperature and is held at the first temperature for a first period of time. The first temperature is a temperature where the solder ball 228 nearly reaches a liquid state. After the first time period has expired, the solder ball 228 is heated to a second temperature for a second period of time. The second temperature is a temperature where the solder ball 228 is at a liquid state. Thus, at liquid state the solder ball 228 spreads across the top portion and the inside surface of the cap 224 where the flux 226 is deposited, as illustrated in FIG. 13. The solder ball 228 only spreads to where the flux 226 is deposited since the flux 226 provides a least resistive path for the solder to flow as opposed to portions of the cap 224 that are not coated with the flux 226. In addition, at liquid state, the solder ball 228 has a high viscosity that prevents the solder ball 228 from flowing to other parts of the cap 224 that are not coated with the flux 226. The higher viscosity also prevents solder from the solder ball 228 from dripping inside the ring 220. The configuration in FIG. 13 represents a single die assembly 232 that includes the die 202 and the sensor 204 disposed inside the ring 220.
FIGS. 14-18 illustrate a fabrication process associated with the process of placing the die assembly 232 on a substrate and a molding process to thereby fabricate the electronic device 100 illustrated in FIG. 1. In the following description, the substrate is comprised of a leadframe. It is to be understood that in alternative examples, the substrate may be comprised of a laminate substrate or a printed circuit board based substrate. For illustrative purposes only, a leadframe based substrate will be described herein and illustrated in the drawings.
FIG. 14 illustrates a cross section view of a leadframe 234 that includes a die pad 236 and conductive terminals 238 (e.g., leads, contacts). A die attach material 240 is deposited on a surface of the die pad 236 resulting in the configuration in FIG. 15. For simplicity the dispensed die attach technique is referenced, however, other die attach techniques such as using a die attach film pre applied to the back of the wafer can also be utilized. The die assembly 232 is then picked and placed on the die attach material 240 resulting in the configuration in FIG. 16. Wire bonds 242 are attached from the active or wire bond surface 206 of the die 202 to a surface of each of the conductive terminals 238 resulting in the configuration in FIG. 17.
A mold compound 244 is formed over the die assembly 232. The mold compound 244 abuts an outer surface of the cylindrical wall 222 and encapsulates the die, the ring 220, the cover 230, and the wire bonds 242 resulting in the configuration of FIG. 18. In the illustrated example, the mold compound 244 covers all but one surface of the leadframe 234, where the one surface not covered faces away from the die assembly 232. As illustrated in FIG. 18, the mold compound 244 extends above the cover 230 such that the mold compound 244 encapsulates the ring 220 and the cover 230. The formation of the ring 220 and the cover 230, however, prevents the mold compound 244 from entering an interior of the ring 220. As a result, a cavity 246 is formed in the mold compound 244 where the sensor 204 resides thereby protecting the sensor 204 from any foreign substance that may compromise the operation of the sensor 204.
FIGS. 19-25 illustrate modifications of the electronic device illustrated in FIGS. 1 and 18. As described above, the die polymer layer 122, 208, the polymer or metal layer 136, 210, and the plated metal structure 134, 212 are optional layers. Thus, FIG. 19 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 18 that does not include the optional die polymer layer 122, 208. FIG. 20 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 18 that does not include an optional polymer or metal layer 136, 210. FIG. 21 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 18 that does not include an optional plated metal structure 134, 212. FIG. 22 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 18 that does not include the optional die polymer layer 122, 208 and the optional polymer or metal layer 136, 210. FIG. 23 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 18 that does not include the optional die polymer layer 122, 208 and the optional plated metal structure 134, 212. FIG. 24 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 18 that does not include the optional polymer or metal layer 136, 210 and the optional plated metal structure 134, 212. FIG. 25 illustrates a cross section view of a modification of the electronic device of FIGS. 1 and 18 that does not include the optional die polymer layer 122, 208, the optional polymer or metal layer 136, 210, and the optional plated metal structure 134, 212.
Described above are examples of the subject disclosure. It is, of course, not possible to describe every conceivable combination of components or methodologies for purposes of describing the subject disclosure, but one of ordinary skill in the art may recognize that many further combinations and permutations of the subject disclosure are possible. Accordingly, the subject disclosure is intended to embrace all such alterations, modifications and variations that fall within the spirit and scope of the appended claims. In addition, where the disclosure or claims recite “a,” “an,” “a first,” or “another” element, or the equivalent thereof, it should be interpreted to include one or more than one such element, neither requiring nor excluding two or more such elements. Furthermore, to the extent that the term “includes” is used in either the detailed description or the claims, such term is intended to be inclusive in a manner similar to the term “comprising” as “comprising” is interpreted when employed as a transitional word in a claim. Finally, the term “based on” is interpreted to mean based at least in part.
Patent Application
20250069976
