This application claims priority to Chinese Patent Application No. 202211727099.6, filed on Dec. 30, 2022, the disclosure of which is incorporated herein by reference in its entirety.
The present disclosure relates to semiconductors technologies, and in particular, to chip packages and a manufacturing method thereof.
Optical interconnects are a key direction for integrated photonics applications. For example, the optical interconnects can provide advanced short-distance interconnect solutions for chips.
The present disclosure provides chip packages and a manufacturing method thereof.
In some embodiments, a chip package is proposed. The chip package includes: an interposer; a plurality of semiconductor chips optically connected to the interposer, wherein the plurality of semiconductor chips includes at least four semiconductor chips; and an optical interconnect chip optically connected to the interpose. Each of the plurality of semiconductor chips is configured to be optically connected to the optical interconnect chip via the interposer, to realize optical signal communication between any two of the plurality of semiconductor chips.
In some embodiments, a chip package is proposed. The chip package includes: an interposer; a plurality of semiconductor chips optically connected to the interposer, wherein the plurality of semiconductor chips includes a first semiconductor chip and a second semiconductor chip; and an optical interconnect chip optically connected to the interpose. The first semiconductor chip and the second semiconductor chip is configured to be respectively optically connected to the optical interconnect chip via the interposer, to realize optical signal communication between the first semiconductor chip and the second semiconductor chip.
In some embodiments, a manufacturing method of a chip package is proposed. The method includes: providing an interposer; mounting a plurality of semiconductor chips on the interposer, to optically connect the plurality of semiconductor chips to the interposer; and mounting an optical interconnect chip on the interposer, to optically connect the optical interconnect chip to the interposer.
Various aspects, features, advantages, etc., of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The above aspects, features, advantages, etc., of the present disclosure will become clearer from the following detailed description in conjunction with the accompanying drawings.
In order to facilitate understanding of various aspects, features, and advantages of technical solutions of various embodiments of the present disclosure, the present disclosure is described in detail below in conjunction with the accompanying drawings. It should be understood that the various embodiments described below are only for illustration and are not intended to limit the scope of the present disclosure.
Hereinafter, exemplary embodiments will be described in more detail with reference to the accompanying drawings. The present disclosure may, however, be embodied in various different forms and should not be construed as limited to the embodiments shown herein. Rather, these embodiments are provided as examples so that the present disclosure will be thorough and complete, and will fully convey the aspects and features of the present disclosure to those skilled in the art. Therefore, processes, elements, and techniques, which are not necessary for those skilled in the art to fully understand the aspects and features of the present disclosure, may not be described. Unless otherwise stated, similar reference numbers refer to similar elements throughout the drawings and written description, and therefore, descriptions thereof may not be repeated. Additionally, features or aspects within each exemplary embodiment should typically be considered as available for other similar features or aspects in other exemplary embodiments.
It will be understood that when an element or feature is referred to as being “on,” “connected to”, or “coupled to” another element or layer, it can be directly on, connected to, or coupled to the another element or feature, or one or more intervening elements or features may be present therebetween. In addition, it will further be understood that when an element or feature is referred to as being “between” two elements or features, it may be the only element or feature between the two elements or features, or one or more other intermediate elements or features may be present between the two elements. The terms “first,” “second,” and other such numerical terms referring to structures do not imply a sequence or an order thereof, unless the context clearly dictates otherwise.
As shown in
The optical connection between the first semiconductor chip 120a and the second semiconductor chip 120b enables them to perform optical signal communication, avoiding delays, energy losses, etc., in electrical signal communication. Optical channels are provided in the optical interconnect chip 130 and the interposer 110 for the propagation the optical signals. The optical interconnect chip 130 may be designed to have a relatively complex waveguide arrangement, while the interposer 110 may have a relatively simple waveguide arrangement. An appropriate manufacturing method can be selected based on manufacturing costs and process requirements, and the optical interconnect chip 130 and the interposer 110 may be manufactured respectively. The interposer 110 may have a larger area than the optical interconnect chip 130 to carry the optical interconnect chip 130 and the semiconductor chips 120.
In this way, the interposer 110 and the optical interconnect chip 130 respectively play the role of optical connection, which can realize communication between the first semiconductor chip 120a and the second semiconductor chip 120b. In addition, the semiconductor chips 120 are optically connected to the interposer 110 to avoid electrical connection and electrical line transmission losses.
In
In some embodiments, the semiconductor chips 120 and the optical interconnect chip 130 may be mounted on the interposer 110 through a bonding material. The bonding material may be an organic material, a metal material, a solder, etc.
Exemplarily, the interposer 110 includes a plurality of first waveguides 111, each of the semiconductor chips 120 includes a second waveguide 121 optically connected to the first waveguide 111, and the optical interconnect chip 130 includes a plurality of third waveguides 131 each optically connected to two of the first waveguides 111. In
For example, as shown in
In some embodiments, the optical interconnect chip 130 is manufactured through a semiconductor process, while the interposer 110 may be manufactured based on a glass substrate or by other means, and they may be completed separately according to appropriate processes, thereby reducing costs.
In some embodiments, the semiconductor chips 120 are optically connected to the interposer 110 through at least one of evanescent coupling and grating coupler coupling. For example, the first waveguide(s) 111 in the interposer 110 is optically connected to the second waveguide(s) 121 in the semiconductor chip(s) 120 through the evanescent coupling. As another example, a waveguide end of the first waveguide 111 may be provided with a grating coupler, a waveguide end of the second waveguide 121 may be provided with a grating coupler, and the first waveguide 111 and the second waveguide 121 may be aligned through their respective grating couplers to achieve coupling.
In some embodiments, the optical interconnect chip 130 is optically connected to the interposer 110 through at least one of the evanescent coupling and the grating coupler coupling. For example, the third waveguide 131 in the optical interconnect chip 130 is optically connected to the first waveguide(s) 111 in the interposer 110 through the evanescent coupling or the grating coupler coupling.
Referring to
In some embodiments, the plurality of third waveguides in the optical interconnect chip 130 are arranged in at least two layers, and the at least two layers include a first layer and a second layer. The plurality of semiconductor chips 120 includes a first semiconductor chip, a second semiconductor chip, a third semiconductor chip, and a fourth semiconductor chip. The first semiconductor chip is optically connected to the interposer via one of the third waveguides in the first layer, so as to be optically connected to the second semiconductor chip through the interposer. The third semiconductor chip is optically connected to the interposer via one of the third waveguides in the second layer, so as to be optically connected to the fourth semiconductor chip through the interposer.
The interposer 110 includes a semiconductor substrate, a glass substrate, or an organic material substrate. The semiconductor chips 120 and the optical interconnect chip 130 may be fixed/mounted to the interposer 110 in a suitable manner, such as using bumps, soldering materials, organic adhesives, etc.
The semiconductor chips 120 may include photonic devices, such as a light modulator, a light detector, a micro-ring resonator, a light beam splitter, etc. The semiconductor chip 120 may further include a photoelectric conversion unit, an electro-optical conversion unit, a photon computing unit, etc. The number of the various photonic devices or various units can be configured according to requirements, which may be one or more.
For example, the electro-optical conversion unit may include a modulator to convert an electrical signal into an optical signal. For example, the semiconductor chip 120 may be optically coupled with a laser or an optical fiber, thereby optical signals may be input to the semiconductor chip 120 or output from the semiconductor chip 120. For example, the waveguides may be used for propagation of optical signals and serve as information transmission channels. For example, the photoelectric conversion unit may include a photodetector for converting an optical signal into an electrical signal, and the photodetector may include, for example, a photodiode. For example, the semiconductor chip 120 includes a light source. The light generated by the light source may be coupled to the waveguides and may also be modulated by an electrical signal. The light source may be a laser or a light-emitting diode integrated into the semiconductor chip 120.
In some embodiments, the semiconductor chip 120 may include two chips or dies that are packaged. For example, referring to
The optical interconnect chip 130 may include an optical coupling structure, a waveguide, a photoelectric conversion unit, an electro-optical conversion unit, a light source, and other photonic devices. The number of the various photonic devices may be configured as needed, which may be one or more. For example, the electro-optical conversion unit may include a modulator to convert an electrical signal into an optical signal. For example, the optical coupling structure may be used to be optically coupled with a laser or an optical fiber, so as to input an optical signal to the optical interconnect chip 130 or output an optical signal from the optical interconnect chip 130, for example, by using an optical fiber. The optical coupling structure may include a grating coupler, an end face coupler, etc. For example, the waveguide may be used for propagation of optical signals and serve as a channel for information transmission. For example, the photoelectric conversion unit may include a photodetector for converting an optical signal into an electrical signal, and the photodetector may include, for example, a photodiode. For example, the optical interconnect chip 130 includes a light source. The light generated by the light source may be coupled to the waveguides and may also be modulated by an electrical signal.
In some embodiments, the optical interconnect chip includes a plurality of third waveguides, and the plurality of third waveguides are arranged in at least two layers. Thus, although it has a smaller area (relative to the interposer 110), the optical interconnect chip 110 can still provide a sufficient number of waveguides.
The waveguides in the interposer 110 may be polymer waveguides, glass waveguides, silicon waveguides, silicon nitride waveguides, or the like. The interposer 110 may be manufactured based on different types of substrates, such as a semiconductor substrate, a glass substrate, a ceramic substrate. The semiconductor substrate may be silicon-on-insulator (SOI), stacked SiGe-on-insulator (S—SiGeOI), etc. In addition, other substrates may also be provided for manufacturing photonic integrated structures. The substrate material may be silicon, germanium, silicon carbide, gallium arsenide, or gallium phosphide, a compound semiconductor, an alloy semiconductor, etc., or a combination thereof. The substrate may be a wafer, such as an SOI wafer. Taking an SOI substrate as an example, the SOI substrate may include a back substrate, an insulating layer, and a top layer of silicon.
In some embodiments, the waveguides in the interposer 110 may be polymer waveguides, which may be formed by etching a polymer material layer.
In some embodiments, the waveguides in the interposer 110 may be glass waveguides, which may be formed based on a glass substrate. For example, a refractive index of local areas in the glass substrate may be changed by laser writing, to form the waveguides.
In some embodiments, the waveguides in the interposer 110 may be silicon waveguides or silicon nitride waveguides. For example, taking an SOI substrate to form the waveguides, the waveguides may include a back substrate, an insulating layer, and a top layer of silicon. The top layer of silicon may be etched to form the waveguides. For example, the waveguides may be formed by depositing a silicon nitride layer and etching the silicon nitride layer.
In some embodiments, the interposer 110 includes a conductive wiring layer, which may be used for transmission of electrical signals and may also be used to provide power for various types of chips. For example, the semiconductor chip 120 may be electrically connected to the interposer 110 according to functional requirements.
In some embodiments, a manufacturing method for a chip package is proposed, including: providing an interposer 110; mounting a plurality of semiconductor chips 120 on the interposer 110, to optically connect the plurality of semiconductor chips 120 to the interposer 110; and mounting an optical interconnect chip 130 on the interposer 110, to optically connect the optical interconnect chip 130 to the interposer 110. The chip package 100 in the embodiments of the present disclosure may be manufactured by the manufacturing method of the chip package.
According to various embodiments of the present disclosure, the optical connections of the semiconductor chips are realized through the interposer and the optical interconnect chip, a suitable packaging solution is provided for optical interconnects, which can be applied to complex optical interconnect scenarios between multiple semiconductor chips and has many advantages. For example, the interposer may have a larger area and be suitable for carrying more semiconductor chips, while the arrangement of optical interconnect chip may improve complexity and flexibility of the optical interconnects. In addition, the interposer and the optical interconnect chip may be manufactured and packaged independently.
Those skilled in the art should understand that what is disclosed above is only some implementation ways of the present disclosure and cannot be used to limit the scope of the patent protection claimed by the present disclosure. Equivalent changes made according to the implementation ways of the present disclosure still fall within the scope of claims of the present disclosure.
Number | Date | Country | Kind |
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202211727099.6 | Dec 2022 | CN | national |