Not applicable.
Printed circuit boards are widely known in the art and are used for forming a wide variety of types of electrical devices. Printed circuit boards typically consist of a number of layers of copper conductors which are interconnected by metallized holes. The metallized holes can be in different forms, such as microvias, buried vias, blind vias and through-holes. In the typical cases, the hole has a single function: the plating in the hole connects all copper layers exposed in the hole to each other, or the hole is used for component insertion.
Vias have also served dual purposes such as providing layer-to-layer interconnection and through-hole component mounts. The growth of surface mount component technology however, has reduced the need to utilize holes for through-hole component mount and has resulted in the via primarily providing layer-to-layer interconnection, a via hole.
There has, however, been a trend to provide PCBs having increasingly higher circuit density and higher circuit speed. Many of these designs have a few dense high Input/Output components grouped together. Thus, many PCB will have a very dense area around the high Input/Output components, while the remainder of the PCB is often of lower density. These very dense areas cause an increased layer count in the PCB resulting in an increased cost of the PCB.
To help meet the demand for increased circuit density, it has been proposed to provide more than one independent signal path or connection in a single via. To provide multiple connections in the same via of a PCB, the via is formed as described above. Discrete connections are then formed among the conductive traces of the PCB by establishing grooves in the plating of the via to electrically isolate segments of the PCB. This technique permits two or more independent signals to be made in the same via of a multi-layer PCB. This technique further conserves space on the PCB and thus allows PCBs to be even more densely populated. Examples of PCBs having discrete connections in the same via are described in U.S. Pat. Nos. 6,137,064; 6,388,208; as well as in US 2004-0118605 A1.
Although ideas about PCBs having electrically isolated segments in the same via have been developed, in practice it has been difficult to reliably produce such PCBs in commercial quantities. Thus, a need exists for a method of producing PCBs having electrically isolated segments in the same via which reliably produces such PCBs in commercial quantities. It is to such an improved method of producing PCBs that the present invention is directed.
So that the above recited features and advantages of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof that are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
a-2g illustrate the sequential steps utilized in one method of forming the printed circuit board depicted in
a-3g illustrate the sequential steps utilized in another method of forming the printed circuit board depicted in
a-4f illustrate the sequential steps utilized in a further method of forming the printed circuit board depicted in
a-5f illustrate the sequential steps utilized in yet another method of forming the printed circuit board depicted in
a-6f illustrate the sequential steps utilized in yet another method of forming the printed circuit board depicted in
a-7f illustrate the sequential steps utilized in yet another method of forming the printed circuit board depicted in
a-d are sequential steps utilized in the formation of yet another version of a printed circuit board constructed in accordance with the present invention.
Presently preferred embodiments of the invention are shown in the above-identified figures and described in detail below. In describing the preferred embodiments, like or identical reference numerals are used to identify common or similar elements. The figures are not necessarily to scale and certain features and certain views of the figures may be shown exaggerated in scale or in schematic in the interest of clarity and conciseness.
Referring now to the drawings, and in particular to
The substrate 12 can be any material or device capable of being utilized to support electrical components, conductors, and the like. In one preferred embodiment, the substrate 12 includes multiple layers of interleaved conductive paths (or traces) and insulators.
The contact pads 14 can be any type of material or device capable of 2 providing an electrical connection or contact to an external component, such as an integrated circuit. For example, the contact pad 14 can be a surface mount contact, or a ball grid array contact, or solder mask defined common mode contact. This shape can be in the form of round, oval, or multi-sided shapes depending on the optimum routing and bonding criteria.
The conductive segments 18 can be constructed of any type of conductive material which is suitable for providing the electrical connection between an internal trace or conductive path, and another internal or external conductive path or trace, with or without external contact pads. Typically, the conductive segments 18 will be constructed of copper. However, it should be understood that other materials and/or alloys of materials and or combinations of different materials can be utilized in forming the conductive segments 18.
The multi-signal via hole 16 can be used to transfer a differential or common mode type signal where each of the conductive segments 18 is coupled to a different portion of the differential or common mode signal. In the case of differential type signals the path or running two signals in parallel would with traditional technology be distorted as the vias separate the signal. In the case of multi signal vias 16 the signals/traces stay close together and have a minimum distortion of the signal. With matching dielectric fill materials the coupling effects can simulate a broadside coupled circuit. This is in combination with the signal impedance on the innerlayers and outerlayers and can potentially dramatically reduce the effects of via stub influence for inductance and capacitance. Stub reduction in the Z direction of the via, using control depth drilling or blind via structures will further reduce the influence of the via compared to conventional single signal through hole vias. An example of a system for stub reduction in the Z direction of the via is disclosed is U.S. Ser. No. 10/944,583 filed on Sep. 17, 2004, the entire content of which is hereby incorporated herein by reference.
The filling material 22 acts as a dielectric between the two conductive segments 18. The dielectric between the two conductive segments can be adjusted by varying the size of the holes 24 and 26 or modifying the material forming the filling material 22.
The traces 20 are constructed of a conductive material, such as gold or copper.
The filling material 22 is desirably formed of a material having chemical and thermal compatibility with the substrate 12 fabrication processes and materials and is desirably compatible with the various plating baths employed. Also, the filling material 22 should exhibit sufficient flow characteristics in order to fill small aspect ratio plated through-holes (or blind holes) and have the ability to be transformed, cured or converted into a solid material, with a minimal volume change after filling. The thermal expansion of the filling material 22 should be compatible with the rest of the substrate 12. Furthermore, the filling material 22 should exhibit good adhesion to the barrel of the plated through-holes.
Six exemplary methods for fabricating the printed circuit board 10 will be described hereinafter.
Referring now to
Thereafter, as shown in
Preferably, an electrolytic plating process is used to deposit the layer 44. The electrolytic process follows a surface preparation step involving either a direct metallization process or an electroless process. The surface preparation step includes depositing a thin conductive layer that sensitizes the surface and assists in the adhesion of the layer 44 to the sidewalls 46. Direct metallization comprises depositing a thin conductive molecular layer (not shown) on the substrate surfaces and the via sidewall 46 prior to depositing the layer 44. The conductive layer is preferably palladium or platinum. This process avoids the typical catalytically deposited copper, thereby rendering this device more economically feasible.
The electroless surface preparation process comprises depositing a thin conductive layer (not shown), preferably copper, on the surfaces of the substrate 40 and the sidewalls 46 of the vias prior to depositing the layer 44, to a thickness in the range between about 30 microinches and about 200 microinches, and more preferably to a thickness in the range between about 70 microinches and about 80 microinches.
The surface preparation followed by the electrolytic deposition results in a highly linear distribution of the layer 44 on the sidewall 46 of the through hole or via 42.
After the sidewall 46 of the through hole or via 42 has been plated with the layer 44, the filling material 22 is introduced into the via through hole 48 as shown in
Once the filling material 22 is introduced into the via through hole 48, and the filling material 22 has cured, the substrate 40 is planarized employing an abrasive, brush, or other type of planing device so that an outer end of the filling material 22 is substantially coplanar with an outer surface of the layer 44.
One or more pattern plates 60 are then provided on a first surface 62, or a second surface 64 of the substrate 40 as shown in
Then, the first and second holes 24 and 26 are formed in the in the substrate 42 with each hole 24 and 26 overlapping the perimeter of the via 42. Each hole 24 and 26 removes a portion of the layer 44 on the sidewall 46 and also removes the filling material 22 so that the holes 24 and 26 cooperate to form the electrically isolated segments 18a and 18b from the layer 44.
The first and second holes 24 and 26 are then cleaned of debris via a cleaning process, such as a vacuum process, a high-pressure washing process, a brushing process or combinations thereof. Then, the substrate 42 is finished with a solder mask, surface finish, such as ENIG, and the like to produce the printed circuit board 10. The solder mask can be any suitable solder mask, such as a glossy type version.
Referring now to
Thereafter, as shown in
Preferably, an electrolytic plating process is used to deposit the layer 44a. The electrolytic process follows a surface preparation step involving either a direct metallization process or an electroless process. The surface preparation step includes depositing a thin conductive layer that sensitizes the surface and assists in the adhesion of the layer 44a to the sidewall 46a. Direct metallization comprises depositing a thin conductive molecular layer (not shown) on the substrate surfaces and the via sidewall 46a prior to depositing the layer 44a. The conductive layer is preferably palladium or platinum. This process avoids the typical catalytically deposited copper, thereby rendering this device more economically feasible.
The electroless surface preparation process comprises depositing a thin conductive layer (not shown), preferably copper, on the surfaces of the substrate 40a and the sidewalls 46a of the via 42a prior to depositing the layer 44a, to a thickness in the range between about 30 microinches and about 200 microinches, and more preferably to a thickness in the range between about 70 microinches and about 80 microinches.
The surface preparation followed by the electrolytic deposition results in a highly linear distribution of the layer 44a on the sidewall 46a of the through hole or via 42a.
After the sidewall 46a of the through hole or via 42a has been plated with the layer 44a, the filling material 22 is introduced into the via through hole 48a as shown in
Once the filling material 22 is introduced into the via through hole 48a, and the filling material 22 has cured, the substrate 40a is planarized employing an abrasive, brush, or other type of planing device so that an outer end of the filling material 22 is substantially coplanar with a first surface 62a and/or a second surface 64a of the layer 44a.
One or more pattern plates 60a are then provided on the first surface 62a and/or the second surface 64a as shown in
The first and second holes 24 and 26 are then cleaned of debris via a cleaning process, such as a vacuum process, a high-pressure washing process, a brushing process or combinations thereof.
Then, the substrate 40a having the holes 24 and 26 formed therein and the one or more pattern plates 60a is passed through a Strip Etch Strip (Sn) process employing a “Strip Etch Strip” (SES) line. Examples of “Strip Etch Strip” lines are disclosed in U.S. Pat. No. 6,074,561, the entire content of which is hereby incorporated herein by reference. The Strip Etch Strip process removes the one or more pattern plates 60a, and also portions of the layer 44a as shown in
Referring now to
Thereafter, as shown in
Preferably, an electrolytic plating process is used to deposit the layer 44b. The electrolytic process follows a surface preparation step involving either a direct metallization process or an electroless process. The surface preparation step includes depositing a thin conductive layer that sensitizes the surface and assists in the adhesion of the layer 44b to the sidewall 46b. Direct metallization comprises depositing a thin conductive molecular layer (not shown) on the substrate surfaces and the via sidewall 46b prior to depositing the layer 44b. The conductive layer is preferably palladium or platinum. This process avoids the typical catalytically deposited copper, thereby rendering this device more economically feasible.
The electroless surface preparation process comprises depositing a thin conductive layer (not shown), preferably copper, on the surfaces of the substrate 40b and the sidewalls 46b of the via 42b prior to depositing the layer 44b, to a thickness in the range between about 30 microinches and about 200 microinches, and more preferably to a thickness in the range between about 70 microinches and about 80 microinches.
The surface preparation followed by the electrolytic deposition results in a highly linear distribution of the layer 44b on the sidewall 46b of the through hole or via 42b.
After the sidewall 46b of the through hole or via 42b has been plated with the layer 44b, the filling material 22 is introduced into the via through hole 48b as shown in
Once the filling material 22 is introduced into the via through hole 48b, and the filling material 22 has cured, the substrate 40b is planarized employing an abrasive, brush, or other type of planing device so that an outer end of the filling material 22 is substantially coplanar with a first surface 62b and/or a second surface 64b of the layer 44b.
Then, as shown in
The first and second holes 24 and 26 are then cleaned of debris via a cleaning process, such as a vacuum process, a high-pressure washing process, a brushing process or combinations thereof.
Thereafter, a dry film and plate metal resist are provided on the first surface 62b, and/or the second surface 64b of the substrate 40b as shown in
Then, the substrate 40b having the holes 24 and 26 formed therein is passed through a Strip Etch Strip (Sn) process employing a “Strip Etch Strip” (SES) line. Examples of “Strip Etch Strip” lines are disclosed in U.S. Pat. No. 6,074,561, the entire content of which is hereby incorporated herein by reference. The Strip Etch Strip process removes the dry film and plate metal resist, and also portions of the layer 44b as shown in
Referring now to
Thereafter, as shown in
Preferably, an electrolytic plating process is used to deposit the layer 44c. The electrolytic process follows a surface preparation step involving either a direct metallization process or an electroless process. The surface preparation step includes depositing a thin conductive layer that sensitizes the surface and assists in the adhesion of the layer 44c to the sidewall 46c. Direct metallization comprises depositing a thin conductive molecular layer (not shown) on the substrate surfaces and the via sidewall 46c prior to depositing the layer 44c. The conductive layer is preferably palladium or platinum. This process avoids the typical catalytically deposited copper, thereby rendering this device more economically feasible.
The electroless surface preparation process comprises depositing a thin conductive layer (not shown), preferably copper, on the surfaces of the substrate 40c and the sidewalls 46c of the via 42c prior to depositing the layer 44c, to a thickness in the range between about 30 microinches and about 200 microinches, and more preferably to a thickness in the range between about 70 microinches and about 80 microinches.
The surface preparation followed by the electrolytic deposition results in a highly linear distribution of the layer 44c on the sidewall 46c of the through hole or via 42c.
After the sidewall 46c of the through hole or via 42c has been plated with the layer 44c, the filling material 22 is introduced into the via through hole 48c as shown in
Once the filling material 22 is introduced into the via through hole 48c, and the filling material 22 has cured, the substrate 40c is planarized employing an abrasive, brush, or other type of planing device so that an outer end of the filling material 22 is substantially coplanar with a first surface 62c and/or a second surface 64c of the layer 44c.
Thereafter, a dry film and plate metal resist 100 are provided on the first surface 62c, and/or the second surface 64c of the substrate 40c as shown in
Then, as shown in
The first and second holes 24 and 26 are then cleaned of debris via a cleaning process, such as a vacuum process, a high-pressure washing process, a brushing process or combinations thereof.
Then, the substrate 40c having the holes 24 and 26 formed therein is passed through a Strip Etch Strip (Sn) process employing a “Strip Etch Strip” (SES) line. Examples of “Strip Etch Strip” lines are disclosed in U.S. Pat. No. 6,074,561, the entire content of which is hereby incorporated herein by reference. The Strip Etch Strip process removes the dry film and plate metal resist, and also portions of the layer 44c. As shown in dashed lines in
Referring now to
Thereafter, as shown in
Preferably, an electrolytic plating process is used to deposit the layer 44d. The electrolytic process follows a surface preparation step involving either a direct metallization process or an electroless process. The surface preparation step includes depositing a thin conductive layer that sensitizes the surface and assists in the adhesion of the layer 44d to the sidewall 46d. Direct metallization comprises depositing a thin conductive molecular layer (not shown) on the substrate surfaces and the via sidewall 46d prior to depositing the layer 44d. The conductive layer is preferably palladium or platinum. This process avoids the typical catalytically deposited copper, thereby rendering this device more economically feasible.
The electroless surface preparation process comprises depositing a thin conductive layer (not shown), preferably copper, on the surfaces of the substrate 40d and the sidewalls 46d of the via 42d prior to depositing the layer 44d, to a thickness in the range between about 30 microinches and about 200 microinches, and more preferably to a thickness in the range between about 70 microinches and about 80 microinches.
The surface preparation followed by the electrolytic deposition results in a highly linear distribution of the layer 44d on the sidewall 46d of the through hole or via 42d.
After the sidewall 46d of the through hole or via 42d has been plated with the layer 44d, the filling material 22 is introduced into the via through hole 48d as shown in
Once the filling material 22 is introduced into the via through hole 48d, and the filling material 22 has cured, the substrate 40d is planarized employing an abrasive, brush, or other type of planing device so that an outer end of the filling material 22 is substantially coplanar with a first surface 62d and/or a second surface 64d of the layer 44d.
Thereafter, an etch resist 102, such as a dry film and image film, are provided on the first surface 62d, and/or the second surface 64d of the substrate 40d as shown in
Then, as shown in
The first and second holes 24 and 26 are then formed in the substrate 42d with each hole 24 and 26 overlapping a perimeter of the via 42d. Each hole 24 and 26 removes a portion of the layer 44d on the sidewall 46d and also removes the filling material 22 so that the holes 24 and 26 cooperate to form the electrically isolated segments 18a and 18b from the layer 44d.
The first and second holes 24 and 26 are then cleaned of debris via a cleaning process, such as a vacuum process, a high-pressure washing process, a brushing process or combinations thereof.
Then, the substrate 40d is finished with a solder mask, surface finish, such as ENIG, and the like to produce the printed circuit board 10. The solder mask can be any suitable solder mask, such as a glossy type version.
Referring now to
Thereafter, as shown in
Preferably, an electrolytic plating process is used to deposit the layer 44e. The electrolytic process follows a surface preparation step involving either a direct metallization process or an electroless process. The surface preparation step includes depositing a thin conductive layer that sensitizes the surface and assists in the adhesion of the layer 44e to the sidewall 46e. Direct metallization comprises depositing a thin conductive molecular layer (not shown) on the substrate surfaces and the via sidewall 46e prior to depositing the layer 44e. The conductive layer is preferably palladium or platinum. This process avoids the typical catalytically deposited copper, thereby rendering this device more economically feasible.
The electroless surface preparation process comprises depositing a thin conductive layer (not shown), preferably copper, on the surfaces of the substrate 40e and the sidewalls 46e of the via 42e prior to depositing the layer 44e, to a thickness in the range between about 30 microinches and about 200 microinches, and more preferably to a thickness in the range between about 70 microinches and about 80 microinches.
The surface preparation followed by the electrolytic deposition results in a highly linear distribution of the layer 44e on the sidewall 46e of the through hole or via 42e.
After the sidewall 46e of the through hole or via 42e has been plated with the layer 44e, the filling material 22 is introduced into the via through hole 48e as shown in
Once the filling material 22 is introduced into the via through hole 48e, and the filling material 22 has cured, the substrate 40e is planarized employing an abrasive, brush, or other type of planing device so that an outer end of the filling material 22 is substantially coplanar with a first surface 62e and/or a second surface 64e of the layer 44e.
Then, as shown in
Thereafter, an etch material 104, such as a dry film and image film are provided on the first surface 62e, and/or the second surface 64e of the substrate 40e as shown in
Then, the substrate 40e having the holes 24 and 26 formed therein is passed through a Strip Etch Strip (Sn) process employing a “Strip Etch Strip” (SES) line. Examples of “Strip Etch Strip” lines are disclosed in U.S. Pat. No. 6,074,561, the entire content of which is hereby incorporated herein by reference. The Strip Etch Strip process removes the etch material 104, and also portions of the layer 44e. As shown in dashed lines in
Then, the substrate 42e is finished with a solder mask, surface finish, such as ENIG, and the like to produce the printed circuit board 10. The solder mask can be any suitable solder mask, such as a glossy type version.
The advantages of Multi Signal Vias 16 are that the routing channel usage is increased by at least 80% (typically 2 tracks on a conventional 1.0 mm pitch BGA with multi signal vias 16, seven (7) to eight (8) or more can be run in one direction). Depending where the multi signal vias 16 are placed, the width of the channel 120 can be reduced, e.g., from 2 mm to 1 mm, in the opposite direction.
Although the multi-signal vias 16 have been shown and described herein as through vias, it should be understood that the multi-signal vias 16 can also be formed as blind vias or buried vias. Further, the substrates 40, 40a, 40b and 40c can be constructed of any suitable materials or devices, such as a double sided 1.6 mm FR4 material, a phenolic based resin such as PCL 370 HR.
The multi-signal vias 16 can be left open and used for the function of cooling the printed circuit board 10 and one or more components 150 mounted thereto. That is, in one preferred embodiment, the present invention relates to a circuit board assembly including the printed circuit board 10, one or more components 150, and a fan 152. The substrate 12 of the printed circuit board 10 has a first side 154 and a second side 156. At least some of the first and second holes 24 and 26 of the multi-signal vias 16 are left open or unfilled to define air passageways. The one or more components have leads 158 mounted to the contact pads 14 on the first side 154 of the substrate 12. The fan 152 is mounted on the second side 156 of the substrate 12 and is powered by a source of motive force, such as an electric motor, to pass air through the air passageways. The fan 152 can be supported on the substrate 12 via any suitable assembly, such as a shroud 160.
As discussed above, backdrilling, i.e., stub reduction in the Z direction of the via, using control depth drilling for example will further reduce the influence of the via compared to conventional single signal through hole vias. The substrate is backdrilled after the via is plated. Thereafter, the filling material 22 is added before the holes 24 and 26 are drilled. For example, shown in
Thereafter, as shown in
Preferably, an electrolytic plating process is used to deposit the layer 44e. The electrolytic process follows a surface preparation step involving either a direct metallization process or an electroless process. The surface preparation step includes depositing a thin conductive layer that sensitizes the surface and assists in the adhesion of the layer 44f to the sidewall 46f. Direct metallization comprises depositing a thin conductive molecular layer (not shown) on the substrate surfaces and the via sidewall 46f prior to depositing the layer 44f. The conductive layer is preferably palladium or platinum. This process avoids the typical catalytically deposited copper, thereby rendering this device more economically feasible.
The electroless surface preparation process comprises depositing a thin conductive layer (not shown), preferably copper, on the surfaces of the substrate 40f and the sidewalls 46f of the via 42f prior to depositing the layer 44f, to a thickness in the range between about 30 microinches and about 200 microinches, and more preferably to a thickness in the range between about 70 microinches and about 80 microinches.
The surface preparation followed by the electrolytic deposition results in a highly linear distribution of the layer 44f on the sidewall 46f of the through hole or via 42e.
Then, as shown in
Once the filling material 22 is introduced into the via through hole 48f, and the filling material 22 has cured, the substrate 40f is completed using any of the example processes discussed above in Examples 1-6.
It will be understood from the foregoing description that various modifications and changes may be made in the preferred and alternative embodiments of the present invention without departing from its true spirit. For example, embodiments of the invention can be combined with High Density Interconnect (HDI) technology. As standard PCB technology knows many different constructions where via holes are created as through holes, blind holes and/or buried holes so can the multi signal vias 16. Thus, the processes described herein can be applied to a number of sequential/high density interconnect build-up constructions. Any sequential or high density interconnect constructions using through holes or any buried and blind holes/microvias can be turned into constructions using the multi signal vias 16. Further, the processes described herein for forming the multi signal vias 16 can be used to construct single chip modules, multi-chip modules and printed circuit boards including back planes and mid planes.
This description is intended for purposes of illustration only and should not be construed in a limiting sense. The scope of this invention should be determined only by the language of the claims that follow. The term “comprising” within the claims is intended to mean “including at least” such that the recited listing of elements in a claim are an open group. “A,” “an” and other singular terms are intended to include the plural forms thereof unless specifically excluded.
The present application is a continuation-in-part of U.S. Ser. No. 11/258,475, filed Oct. 25, 2005 the contents of which are expressly incorporated by reference herein in its entirety.
Number | Date | Country | |
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Parent | 11258475 | Oct 2005 | US |
Child | 11483321 | Jul 2006 | US |