Patent Application
20140091215
The present invention relates to an electro-optical inspection apparatus and method for inspecting a sample surface using an electron beam, and more particularly, to an electro-optical inspection apparatus and method that is capable of inspecting a sample surface at high sensitivity using an electron beam while preventing adhesion of dusts or particles to sample surfaces (of front and back sides and peripheral edges).
The electro-optical inspection apparatus is used for obtaining an image of a sample surface of a semiconductor wafer or the like by irradiating the sample surface with a primary electron beam, and detecting secondary electrons or mirror electrons emitted from the sample surface, to perform inspection of defects on the sample surface and/or pattern evaluation of the sample surface on the basis of the obtained image.
In addition, it is known that while a sample such as a semiconductor wafer is conveyed in the air or in vacuum for inspection or processing, if adhesion of dusts such as particles having a diameter of 100 nm or smaller to the sample surface can be prevented to reduce adhesion of dusts or particles to be killer defects on a pattern to the sample surface, production yield can be greatly improved. In a semiconductor or LSI manufacturing process, if the killer defects are on the sample surface, a width of wiring or insulation resistance becomes insufficient so that performance is significantly deteriorated. Therefore, it is necessary to take measures against the killer defects, such as correction or detection of the defects.
In particular, the electro-optical inspection apparatus can provide a measurement or inspection result with high accuracy by reducing adhesion of dusts or particles generated by the inspection apparatus to a sample surface. Thus, a process of dusts or particle adhesion to the sample surface can be identified and improved so that defects in an exposure process can be reduced, for example.
Conventionally, in relation to conveyance of samples, measures have been taken for reducing generation of dusts or particles as much as possible. For instance, as to an air conveyance system, a mini-environment having a high-performance filter and down flow is provided, and the air conveyance system is housed in the mini-environment. Further, a static electricity remover removes static electricity of the sample so as to prevent particles from adhering to the sample surface. In addition, in a vacuum conveyance system for samples, control of fluctuation of pressure is performed by a load lock. However, it is usually difficult to reduce dusts or particles having very small sizes, in particular, of 100 nm or smaller.
In view of this problem, the applicant has proposed a method of removing dusts or particles from a sample surface (refer to Japanese Patent Application Publication No. 2009-4161 (Patent Document 1)). In this method, the dusts or particles on the sample surface are detected, the sample is moved in a horizontal direction, a collection electrode disposed close and opposite to the sample surface is charged to have the polarity opposite to the charge polarity of the dusts or particles, and hence approaching dusts or particles are electro-statically attracted by the xollection electrode. Thus, the dusts or particles on the sample surface are detected, and the detected dusts or particles are removed from the sample surface.
In addition, there is also proposed a particle monitor (refer to Japanese Patent Application Publication No. 2010-56270 (Patent Document 2)), in which particles floating in a plasma processing apparatus are collected actively by a dusts or particle collecting electrode and are accumulated in a specific place using a quadrupole linear trap or the like so that the particles are detected electrically or by using laser scattered light.
As a design rule of LSI has become very fine, a size of dusts or particles to be prevented from adhering to a sample surface has become very small. Adhesion of dusts or particles generated by an operation of the inspection apparatus to the sample surface has become a critical problem, and it is necessary to take a countermeasure.
However, in the conventional dusts or particle adhesion prevention mechanism, it is difficult to prevent dusts or particles such as fine particles of 100 nm or smaller, for example, from adhering to the sample surface. In particular, if a sample is placed on a stage or the like in a vacuum chamber for inspecting the sample surface by the electro-optical inspection apparatus, there has been no consideration about suppressing generation of dusts or particles from the apparatus itself.
The prior art described in Patent Document 1 detects that dusts or particles have adhered to the sample surface, and afterward removes the adhered dusts or particles from the sample surface. Therefore, conventional example described in Patent Document 1 cannot prevent dusts or particles from adhering to the sample surface. In addition, in the prior art described in Patent Document 2, the dusts collecting electrode is provided to the tip of the particle monitor, for collecting particles floating in the plasma processing apparatus. Therefore, adhesion of particles to the sample surface cannot be prevented.
In addition, there is a case that, when a vacuum chamber is evacuated, air flow causes static electricity, which electrifies dusts or particles remaining in the vacuum chamber, and the electrified dusts or particles such as particles are electro-statically attracted by the sample surface to be inspected and adhere thereto so that the sample surface is contaminated. A conventional vacuum chamber used for inspecting a sample surface has no countermeasure against the electrostatic attraction of dusts or particles remaining in the vacuum chamber to the sample surface, and cleaning has been the only way to cope with such remaining particles. Therefore, it is strongly required to prevent such remaining particles in the vacuum chamber that could not be removed by cleaning from adhering to the sample surface.
The present invention has been made in view of the above-mentioned problem, and a first object thereof is to provide a method of preventing as many dusts or particles as possible from adhering to a sample surface, and an electro-optical inspection apparatus for inspecting a sample surface using an electron beam while preventing as many dusts or particles as possible from adhering to the sample surface.
Japanese Patent Application Publication No. 2005-235777 (Patent Document 3) describes a method of observing a sample surface using an electro-optical inspection apparatus. This conventional method utilizes gradation differences of an image generated in a part where an open defect or a short defect exists. In the part where a defect such as an open defect or a short defect exists, gradation differences appear in the image, which never appear in a normal part. Therefore, in the conventional method, a wafer surface image obtained from a semiconductor wafer surface is compared with an original surface image (of a wafer without any defect). If a gradation difference, which must not appear when using a normal wafer, appears in a part, it is determined that the part has an open defect or a short defect.
However, in an observation method disclosed in Patent Document 3, there is a problem that the gradation difference in an observation part is originally small depending on a structure or material of the sample to be observed, and that it is difficult to detect a short defect or an open defect in some cases.
In addition, particularly in the case of the open defect, the image of the part where the open defect exists becomes darker (blacker) than the image of the normal part in one case, and becomes lighter (whiter) than that of the normal part in another case. Therefore, there has been a problem that it is very difficult to detect a defect and/or to classify a type of the defect.
In view of this problem, the inventors of the present invention have studied to provide a sample surface observation method that can obtain a sample surface image having large gradation differences between a defect part and a normal part in defect detection of a wiring structure and a clear difference between gray levels of white and black, so that a defect can be easily detected. As a result, the inventors of the present invention have found that the problem of the sample surface observation method disclosed in Patent Document 3 is due to simultaneous detection of a short defect and an open defect in the same condition. Hence, they have proposed a new sample surface observation method (see Japanese Patent Application Publication No. 2009-87893 (Patent Document 4)).
Patent Document 4 discloses a sample surface observation method in which an electron beam irradiates a sample surface on which a wiring pattern containing insulation material and conductive material is formed, and hence electrons having structural information of the sample surface are detected so that an image of the sample surface is obtained for observing the sample surface. The sample surface is irradiated by the electron beam in the state where the insulation material and the conductive material have the same luminance in the sample surface image so that a part other than the insulation material and the conductive material can be easily and reliably detected. In addition, a point having a luminance which is different from the luminance of the insulation material and the conductive material in the sample surface image is detected as an open defect on the sample surface, so that the open defect can be easily and reliably detected.
In addition, Patent Document 4 also discloses a sample surface observation method that can effectively detect a short defect, in which an electron beam irradiates a sample surface in a state that a luminance difference between the insulation material and the conductive material becomes maximum in the sample surface image, and hence the sample surface image that facilitates distinction between the short defect and its surrounding part is obtained, so that the short defect can be easily and reliably detected. In addition, a state that the luminance difference becomes the maximum is determined in a mirror electron region in which electrons having the structural information of the sample surface become mirror electrons.
However, the inventors of the present invention have further studied a method and apparatus that enables observation of a sample surface with high contrasts in a case where an insulation region and a conductive region are formed on the sample surface, and facilitates not only detection of a short defect or an open defect but also classification of a type of the defect. As a result, the inventors of the present invention have reached a conclusion that the method disclosed in Patent Document 4 still has room for improvement.
Therefore, a second object of the present invention is to provide a sample observation method and apparatus that can achieve the above-mentioned first object, and further enables high contrast observation of a sample surface on which an insulation region and a conductive region are formed, and facilitates detection of a short defect or an open defect as well as classification of a type of the defect, and to provide a sample inspection method and apparatus using the sample observation method and apparatus.
To achieve the first object, the invention provides an electro-optical inspection apparatus for inspecting a surface of a sample using an electron beam, which comprises:
an electron beam source;
a primary electro-optical system comprising at least a primary lens for inducing a primary electron beam emitted from the electron beam source;
a stage for mounting the sample thereon, the surface of the sample being irradiated with the primary electron beam induced through the primary electro-optical system;
a secondary electro-optical system comprising at least a secondary lens and an aperture for defining NA (Numerical Aperture), for inducing secondary electrons and mirror electrons, the secondary electrons being emitted from the sample surface when irradiating the sample surface with the primary electron beam, and the mirror electrons being reflected from the sample surface and its vicinity when irradiating the sample surface with the primary electron beam;
a detector for detecting at least either of the secondary electrons or mirror electrons induced through the secondary electro-optical system;
a first power source for supplying a first voltage to the sample mounted on the stage;
at lest a first electrode located to surround the sample mounted on the stage, for collecting dusts or particles; and
a second power source for supplying a second voltage to the first electrode, the second voltage having the same polarity as that of the first voltage and an absolute value which is equal to and larger than that of the first voltage.
In the above electro-optical inspection apparatus according to the invention, it is preferable to further comprise at least a second electrode located to surround the first electrode, for collecting dusts or particles, and a third power source for supplying a third voltage to the second electrode, the third voltage having the same polarity as that of the first voltage and an absolute value which is equal to or larger than that of the first voltage. In addition, it is preferable to further comprise a plate located over the sample mounted on the stage, to cover the sample, the plate having an aperture through which an electron beam passes to/from the sample surface, and a cover surrounding the stage for preventing dusts or particles from flowing to the stage.
In the above electro-optical inspection apparatus according to the invention, it is preferable to further comprise a first terminal plate comprising at least two terminals, one of which is connected to the first power source and the other of which is connected to the second power source, a cable including two electrical wires, first ends of the electrical wires being connected to the terminals of the first terminal plate, respectively, a box containing the terminal plate, a portion of the cable and a second electrode for collecting dusts or particles in the box, the portion of the cable being supported as flexibly bending, and a second terminal plate fixed at the stage and comprising at least two terminals connected to second ends of the electrical wires, the terminals being used to supply the first and second voltages to the sample and the first electrode, wherein a portion of the cable between the box and the second plate is supported to extend linearly, and the flexibly bending portion in the box bends or extends as the stage is moving.
To achieve the first object, the invention also provides an electro-optical inspection apparatus for inspecting a surface of a sample using an electron beam, which comprises:
an electron beam source;
a primary electro-optical system comprising at least a primary lens for inducing a primary electron beam emitted from the electron beam source;
a stage for mounting the sample thereon, the surface of the sample being irradiated with the primary electron beam induced through the primary electro-optical system;
a secondary electro-optical system comprising at least a secondary lens and an aperture for defining NA (Numerical Aperture), for inducing secondary electrons and mirror electrons, the secondary electrons being emitted from the sample surface when irradiating the sample surface with the primary electron beam, and the mirror electrons being reflected from the sample surface and its vicinity when irradiating the sample surface with the primary electron beam;
a detector for detecting at least ones of the secondary electrons and mirror electrons induced through the secondary electro-optical system;
a chamber capable of being evacuated and containing the stage therein; and
a device for performing electrolytic dissociation gases in the chamber during a process of vacuuming the chamber to eliminate static electricity which exists on structures in the chamber and materials on the structures.
To achieve the first object, the invention further provides an electro-optical inspection apparatus for inspecting a surface of a sample using an electron beam, which comprises:
an electron beam source;
a primary electro-optical system comprising at least a primary lens for inducing a primary electron beam emitted from the electron beam source;
a stage for mounting the sample thereon, the surface of the sample being irradiated with the primary electron beam induced through the primary electro-optical system;
a secondary electro-optical system comprising at least a secondary lens and an aperture for defining NA (Numerical Aperture), for inducing secondary electrons and mirror electrons, the secondary electrons being emitted from the sample surface when irradiating the sample surface with the primary electron beam, and the mirror electrons being reflected from the sample surface and its vicinity when irradiating the sample surface with the primary electron beam;
a detector for detecting at least ones of the secondary electrons and mirror electrons induced through the secondary electro-optical system; and
a chamber capable of being evacuated and containing the stage therein, inner walls of the chamber having at least a hole, or comprising mesh-metallic plates attached thereto, the plates being supplied with a predetermined voltage.
In each of the above electro-optical inspection apparatuses according to the invention, it is preferable that the electron beam source is adapted to emit a primary electron beam a cross section of which has a substantial area.
Further, in the electro-optical inspection apparatus according to the invention, it is further preferable to comprise an energy control means for setting energy of the electron beam directing to the sample surface and energy supplied to the sample such that electrons directing from the sample surface to a detector within a transition band which contains mirror electrons and secondary electrons, and an aperture adjustment mechanism for adjusting a location of at least an aperture on a plane perpendicular to an axis of a secondary electro-optical system of the inspection apparatus, so that electrons from a conductive material region of the sample surface and electrons from a nonconductive material region of the sample surface are selectively induced to the detector. By the apparatus comprising the energy control means and aperture adjustment mechanism, the second object of the invention can be achieved. That is, the apparatus enables high contrast observation of a sample surface on which an insulation region and a conductive region are formed, and facilitates detection of a short defect or an open defect as well as classification of a type of the defect, while achieving the first object.
In the electro-optical inspection apparatus comprising the aperture adjustment mechanism, it is preferable that the secondary electro-optical system of the inspection apparatus comprises a plurality of apertures having different diameters, respectively, and the aperture adjustment mechanism selects one of the apertures and adjusts its location such that electrons from either of the conductive material region and the nonconductive material region pass through the selected aperture to the detector.
When using a primary electron beam having the cross section with a substantial area, it is preferable that the detector comprises EB-CCD(s) or EB-TDI(s).
To achieve the first object, the invention also provides a method of inspecting a surface of a sample using an electro-optical inspection system, comprising the steps of:
setting the sample on a stage;
supplying a first voltage to the sample on a stage;
supplying a second voltage to a first electrode located to surround the sample on the stage to collect dusts and particles, the second voltage having the same polarity as that of the first voltage and an absolute value which is equal to or larger than that of the first voltage;
emitting a primary electron beam from an electron beam source, and irradiating the sample surface with the electron beam through a primary electro-optical system; and
detecting, at a detector, at least ones of secondary electrons and mirror electrons, the secondary electrons being emitted from the sample surface when irradiating the sample surface with the primary electron beam, and the mirror electrons being reflected from the sample surface and its vicinity when irradiating the sample surface with the primary electron beam.
In the above method according to the invention, it is preferable further comprise the step of supplying a third voltage to a second electrode located to surround the first electrode, the third voltage having the same polarity as that of the first voltage and an absolute value which is equal to or larger than that of the first voltage.
To achieve the first object, the invention further provides a method of inspecting a surface of a sample using an electro-optical inspection apparatus, comprising the steps of:
setting the sample on a stage;
supplying a first voltage to the sample on a stage;
vacuuming a chamber containing the stage;
dissociating electrolytically gases in the chamber which have existed during the step of vacuuming the chamber to eliminate static electricity on structures in the chamber and materials on the structures;
emitting a primary electron beam from an electron beam source, and irradiating the sample surface with the electron beam through a primary electro-optical system; and
detecting, at a detector, at least ones of secondary electrons and mirror electrons, the secondary electrons being emitted from the sample surface when irradiating the sample surface with the primary electron beam, and the mirror electrons being reflected from the sample surface and its vicinity when irradiating the sample surface with the primary electron beam.
In the above method according to the invention, it is preferable that the electron beam source emits a primary electron beam a cross section of which has a substantial area, and the method further comprises the steps of setting energy of the electron beam directing to the sample surface and energy supplied to the sample such that electrons directing from the sample surface to a detector are within a transition band which contains mirror electrons and secondary electrons, and adjusting a location of an aperture defining NA (Numerical Aperture), on a plane perpendicular to an axis of the secondary electro-optical system of the inspection apparatus, so that electrons from a conductive material region of the sample surface and electrons from a nonconductive material region of the sample surface are selectively induced to the detector by the adjustment.
In addition, it is preferable in this method that the secondary electro-optical system comprises a plurality of apertures having different diameters, respectively, and the step of adjusting comprises the steps of selecting one of the apertures, and adjusting a location of the selected aperture such that electrons from either of the conductive material region and the nonconductive material region pass through the selected aperture to the detector.
Hereinafter, with reference to the attached drawings, embodiments of the present invention are described.
At least one NA aperture 361 is formed in the NA adjustment aperture plate 360, and the NA aperture 361 determines the numerical aperture (NA). A position of the NA aperture 361 can be adjusted in a plane, and hence electrons having structural information of a conductive region and electrons having structural information of an insulation region, which are directed in different directions by the function of the E×B 340 which will be described later, can be selectively guided to the detector 400. Note that, this electro-optical inspection apparatus may have a structure including charged electron beam irradiation means 700 for irradiating the surface of the sample 200 with an electron beam to electrify the sample surface as necessary.
The surface of the sample 200 has insulation and conductive regions, and observation of the sample surface is performed by irradiating with an electron beam from the electron beam source 310. The electron beam source 310 includes, for example, an electron source 311, a Wehnelt electrode 312, and an anode 313. The electron source 311 generates electrons, which are led out by the Wehnelt electrode 312 and are accelerated by the anode 313 so that the sample surface is irradiated with the electrons.
The electron beam source 310 may have a structure to generate a surface electron beam having a predetermined area including a plurality of pixels so that a plurality of pixels can be imaged simultaneously. Thus, a plurality of pixels can be imaged simultaneously by one irradiation of the sample surface with the electron beam, and hence a two-dimensional image of a large area can be obtained at high speed.
The landing energy adjust/supply unit 600 is used to set landing energy of the electron beam emitted from the electron beam source 310. The landing energy adjust/supply unit 600 includes a variable voltage source having a negative electrode connected to the electron source and supplies electric power to the electron beam source 310 so that the electron source 311 generates electrons. The landing energy of the electron beam is determined by a difference between a potential of the sample 200 and a potential of a cathode of the electron source 311 of the electron beam source 310. Therefore, the landing energy adjust/supply unit 600 can adjust the voltage of the variable voltage source (hereinafter, referred to as an “acceleration voltage”) so that the landing energy can be adjusted.
In the electro-optical inspection apparatus according to the present invention, the landing energy adjust/supply unit 600 sets the landing energy of the electron beam to an appropriate value, and contrast of an obtained image is enhanced. In the present invention, the landing energy of the electron beam is set in a transition region in which the electrons having structural information of the surface of the sample 200 by irradiation of the imaging electron beam include both the mirror electrons and the secondary electrons. A specific method of setting the landing energy is described later.
Each of the primary lenses 320 deflects the electron beam emitted from the electron beam source 310 by an electromagnetic field, to thereby guide the electron beam to a desired irradiation region on the surface of the sample 200. Note that, there may be a plurality of primary lenses 320 or a single primary lens 320. For example, a quadrupole lens can be used as each of the primary lenses 320.
The E×B deflector 340 applies an electric field and a magnetic field to the electron beam or the electrons, and directing the electron beam or the electrons by Lorentz force so that the electron beam or the electrons are directed in a predetermined direction. The E×B deflector 340 sets the electric field and the magnetic field so as to generate the Lorentz force that directs the electron beam emitted from the electron beam source 310 to the surface of the sample 200.
In addition, the E×B deflector 340 sets the electric field and the magnetic field so that the electrons having the structural information of the sample surface by irradiation of the sample surface with the electron beam propagate straight upward and are directed to the direction of the detector 400. As described later, the electrons having the structural information of the sample surface emitted by irradiation of the sample surface with the imaging electron beam are directed by the electric field and the magnetic field as the function of the E×B deflector 340 according to propagation speed of the electron beam in the direction opposite to the incident direction.
By the function of the E×B deflector 340, it is possible to separate the electron beam entering the sample surface from the electrons that are generated from the sample surface and propagate in the direction opposite to the incident electron beam. Note that, the E×B deflector may be referred to as a Wien filter.
The condenser lens 330 is a lens that forms an image of the electron beam on the surface of the sample 200 and condenses electrons having structural information of the sample surface. Therefore, the condenser lens 330 is disposed closest to the sample 200.
The transfer lens 350 guides the electrons after passing through the E×B deflector 340 to the direction of the detector 400 and forming a crossover in a vicinity of the NA aperture 361 of the NA adjustment aperture plate 360.
The NA adjustment aperture plate 360 can adjust the number of passing electrons. The NA adjustment aperture plate 360 has the NA aperture 361 in the center portion, which is an aperture determining the numerical aperture (NA). The NA aperture 361 transmits the electrons that are emitted from the sample surface and are guided by the transfer lens 350, to be a passage to the detector 400. The NA aperture 361 can prevent electrons which may be noise in imaging, from propagating to the detector 400 and adjusts the number of passing electrons. In addition, as described above, a position of the NA aperture 361 in the plane can be adjusted, and hence electrons having structural information of a conductive region and electrons having structural information of an insulation region, which are directed in different directions by the function of the E×B deflector 340, can be selectively guided to the detector 400. Details thereof are described later. There may be disposed a plurality of types of the NA apertures 361 having different aperture diameters. In this case, an NA aperture having a desired aperture diameter is selected by an NA aperture moving mechanism (not shown).
The projection lens 370 is final focus adjusting means for forming an image of electrons that have passed the NA adjusting aperture 361 on a detection surface of the detector 400.
The detector 400 detects electrons having structural information of the sample surface when the electron beam irradiates the sample surface so as to obtain an image of the sample surface. Various detectors can be used as the detector 400. For example, a charge coupled device (CCD) detector capable of obtaining parallel images or a time delay integration (TDI)-CCD detector can be used. Using a two-dimensional imaging type detector 400 such as a CCD or a TDI-CCD, and using a surface beam that can irradiate a predetermined area including a plurality of pixels as the electron beam source 310, it is possible to obtain an image of wide area by parallel imaging with beam irradiation in one spot so that the sample surface can be observed at high speed. The CCD or the TDI-CCD is a detection element that detects light and outputs an electric signal. If the CCD or the TDI-CCD is used as the detector 400, a fluorescent screen that converts electrons into light or a micro channel plate (MCP) that multiplies electrons is necessary and should be included in the detector 400.
An EB-CCD or an EB-TDI may be used as the detector 400. The EB-CCD and the EB-TDI are two-dimensional imaging type detectors similarly to the CCD and the TDI-CCD, but directly detect electrons and output the electric signal as it is without conversion between light and electrons. Therefore, the above-mentioned fluorescent screen or MCP is not necessary, and a signal loss in the process is reduced so that an image with high resolution can be obtained.
The image processing device 500 is a device that stores the electric signal output from the detector 400 and generates an image of the surface of the sample 200 based on the stored signal. Specifically, a two-dimensional image is generated based on coordinate information and luminance information output from the detector 400. In order to observe the sample 200 having the surface containing insulation material and conductive material, it is preferred that a luminance difference be generated between the insulation region and the conductive region so that an image with high contrast is obtained. The image processing device 500 performs necessary image processing and image generation so that a good image can be obtained.
The stage 100 has an upper surface on which the sample 200 placed so that the sample 200 is supported. The stage 100 can be moved in the X direction and in the Y direction of the horizontal plane (X-Y plane) and can be rotated in the horizontal plane so that the electron beam can irradiate the entire region to be observed of a sample surface 201. In addition, it is possible to constitute the stage 100 to be movable in the vertical direction (Z direction) as necessary so that a height of the surface of the sample 200 can be adjusted. In order to constitute the stage 100 to be movable, for example, moving means such as a motor or an air actuator should be disposed.
The charged electron beam irradiation means 700 is provided for electrifying the sample 200 before the sample 200 is irradiated with the imaging electron beam for imaging from the electron beam source 310. The charged electron beam irradiation means 700 is provided as necessary. Assuming that the sample surface is irradiated with the electron beam in advance before imaging of the sample surface, the conductive region is not electrified so that the potential thereof remains to be the ground potential, while the insulation region is negatively electrified. Therefore, it is possible to form a potential difference between the conductive region and the insulation region according to their materials. Then, the potential difference can enhance the contrast between the conductive region and the insulation region. Therefore, if it is desired to irradiate the sample surface with the charged electron beam before the imaging electron beam irradiates, the charged electron beam irradiation means 700 should be disposed.
It is possible that the electron beam source 310 works also as the charged electron beam irradiation means without separately providing the charged electron beam irradiation means 700. In other words, the charged electron beam may be irradiated from the electron beam source 310 instead of using the charged electron beam irradiation means 700. Then, after irradiation with the charged electron beam, the surface of the sample 200 may be irradiated with the electron beam for imaging.
Therefore, charged electron beam irradiation means 700 may be disposed, for example, in the case where the charged electron beam should irradiate the sample surface 201 and the electron beam for imaging should be irradiated promptly after the irradiation with the charged electron beam. In general, the imaging electron beam and the charged electron beam have different landing energy. By disposing the charged electron beam irradiation means 700, adjustment of landing energy between the charged electron beam irradiation and the imaging electron beam irradiation becomes unnecessary so that the imaging can be performed promptly. Therefore, if there is high requirement for reducing observation time, the charged electron beam irradiation means 700 should be disposed to satisfy the requirement for reducing observation time.
The surface of the sample 200 usually includes an insulation region made of insulation material and a conductive region made of conductive material. Samples 200 having various shapes can be used. For instance, a wafer-like sample such as a semiconductor wafer or a reticle is used. It is preferred that the electro-optical inspection apparatus according to the present invention have a structure in which the sample surface can be observed appropriately also in the case where an area ratio of the insulation region to the sample surface is larger than that of the conductive region. With this structure, an image of the sample surface can be obtained and observed appropriately also for a contact plug of a semiconductor wafer or a contact structure of a reticle, for example.
Various materials can be used as the conductive material or the insulation material. For instance, plug material such as tungsten (W) can be used as the conductive material, and silicon oxide film (SiO2) that is used as an insulation layer of a semiconductor wafer can be used as the insulation material.
The electro-optical inspection apparatus illustrated in
The combination type sample observation system illustrated in
The main chamber 1600 is provided with the stage 100 that can move in the X direction, in the Y direction, and in θ (rotational) direction in the horizontal plane (XY plane). On the stage 100, there is disposed an electrostatic chuck (denoted by 120 in
The inside pressure of the main chamber 1600 is controlled by a vacuum control system 1500 so that the vacuum state is maintained. In addition, the main chamber 1600, the transfer chamber 1610, and the load lock 1620 are placed on a vibration isolation table 1700 so that vibration is not transmitted from the floor.
The main chamber 1600 is provided with the electro-optical system 1300. This electro-optical system 1300 is equipped with a primary optical system including the electron beam source 310 and the primary lens 320 illustrated in
A signal from the detector 400 is sent to the image processing device 500 for signal processing. The signal processing can be performed both in real time process for a currently observed image and in off line process in which an image is obtained and is later processed. The data processed by the image processing device 500 is stored in a recording medium such as a hard disk or a memory. In addition, it is possible to display on a monitor of a console as necessary, for example, as an observation region, a defect map, a defect classification, a patch image, and the like. In order to perform the signal processing, there is disposed a system control part 950. In addition, in order to supply electric power to the electro-optical system 1300, there is disposed an electro-optical system control power supply 1180. The electro-optical system control power supply 1180 includes a power supply 600 for supplying electric power to the electron source 311 of the electron beam source 310, and landing energy control means for controlling the power supply. The electro-optical system control power supply 1180 also includes a power supply for setting a potential of the sample, which is described later, and control means thereof, and a power supply for a voltage to be applied to a dust collecting electrode, which is described later, and control means thereof.
Next, a conveyance mechanism for the sample is described. The sample such as a wafer or a mask is conveyed from the load port 1900 to the mini-environment 1800, in which alignment is performed. Further, the sample is conveyed by the air conveyance robot to the load lock 1620. In the load lock 1620, air is exhausted by a vacuum pump (not shown) from the atmospheric state to a vacuum state. When the pressure inside the load lock 1620 becomes a predetermined pressure (for example, approximately 1 Pa) or lower by this exhaustion, the sample is conveyed from the load lock 1620 to the main chamber 1600 by the vacuum conveyance robot disposed in the transfer chamber 1610 and is placed on an electrostatic chuck mechanism of the stage 100.
In the system of
In other words, when the sample is moved between separate inspection apparatuses, it is necessary to place the sample on separate stages. Therefore, it is necessary to perform alignment of the sample individually, and even if the sample alignment is performed in this way, specific error of the same place becomes 5 to 10 μm or larger. In particular, if the sample has no pattern, a position reference cannot be specified so that the error is further increased.
According to this example, if the sample 200 moves between the mapping projection type electro-optical system 1300 and the SEM type electro-optical system 1450, the same place can be identified with high accuracy. Therefore, a place can be identified with high accuracy, for example, an accuracy of 1 μm or smaller. Thus, if the inspection of a pattern and a pattern defect is performed by the mapping projection type electro-optical system 1300, it is very effective to perform identification and detailed observation (review) of the detected defect with the SEM type electro-optical system 1450. In other words, because a place can be identified, it is possible to detect presence or absence of defect (pseudo-detection in the case of absence), and accurate size and shape of the defect can be detected at high speed. If separate apparatuses are used, detection of a pattern defect and identification thereof take much time.
According to the present invention, because a system in which the mapping projection type electro-optical system and the SEM type electro-optical system are disposed in the same chamber, is used, it is possible to perform inspection, decision, and classification of an ultrafine pattern of 100 nm or smaller, in particular, with high efficiency and at high speed.
Next, with reference to
The stage 100 has a stroke movement region of an effective distance of the sample 200 plus a run-up distance (inspection maximum speed x speed stabilization time) so that imaging of an effective region of the sample (mask) 200 and the defect inspection can be performed. For instance, supposing that the effective distances of the sample 200 in the X direction and in the Y direction are 300 mm each, and the run-up distance is 50 mm (=100 mm/s×0.5 sec), the stage 100 has the stroke movement region of 400 mm.
A dust (or particle) collecting electrode 122 that has a rectangular cross section and extends continuously in a shape of a rectangular frame is disposed at a position surrounding the entire periphery of the sample 200 with a predetermined interval between the dust collecting electrode 122 and the sample 200 placed on the stage 100. Further, a gap control plate 124 having a center through hole 124a is disposed above the sample (mask) 200 placed on the stage 100 and the dust collecting electrode 122 in a horizontal posture with a small gap between the inner surface of the vacuum chamber 112 and the gap control plate 124. In this through hole 124a, there is an optical system element, namely the condenser lens 330 of the electro-optical inspection apparatus. The electron beam is irradiated through this condenser lens 330 to the surface of the sample 200 placed on the stage 100. A size of the through hole 124a is set to be slightly larger than the outside shape of the condenser lens 330.
The dust collecting electrode 122 is made of non-magnetic material such as phosphor bronze or Ti so as to eliminate a curve of the electron beam or a change of orbit due to the magnetic field. The electron beam includes a primary irradiating electron beam, a secondary emission electron beam emitted from the sample 200, a mirror electron beam reflected in a vicinity of the sample 200, and the like.
The gap control plate 124 is made of phosphor bronze, Ti, or SUS sheet having a thickness of 0.3 to 5 mm, for example. It is preferred that the gap control plate 124 be coated with Au, Pt, Ru, or Os so that the potential is stabilized and contamination is prevented. Further, the gap control plate 124 has a size that is set so that the dust collecting electrode 122 covers a region that does not go out of the region of the gap control plate 124 when the stage 100 moves within its movement region. Thus, it is prevented that the electric field distribution is disturbed and that the orbit of the particle changes when the stage 100 moves and the sample 200 placed on the stage 100 moves to the most distant position in the vacuum chamber 112. Thus, it is possible to prevent the particles from moving to the sample 200 and adhering to the sample surface. Note that, the gap control plate 124 is not always necessary. The same is true in the following examples.
In this example, as illustrated in
It is not always necessary that the dust collecting electrode 122 surrounds the entire periphery of the sample 200. It is sufficient that the electric field formed by the dust collecting electrode 122 can surround the periphery of the sample 200. For instance, as illustrated in
In the examples illustrated in
In any case, a predetermined voltage is applied to all of one or more dust collecting electrodes 122 surrounding the sample 200 placed on the stage 100 so as to collect dust, and afterward the electron beam source 310 (see
In this example, a voltage of −1 to −5 kV is applied to the surface of the sample 200 via the first power supply 128, and a voltage having the same polarity as the voltage applied to the sample 200 and an absolute value larger the voltage applied to the sample 200 by 0.5 to 5 kV, for example, is applied to the dust collecting electrode 122 via the second power supply 130. In other words, when a voltage of, for example, −3 kV is applied to the sample 200, a voltage of −3.5 to −8 kV, for example, −5 kV is applied to the dust collecting electrode 122.
The vacuum chamber 112 is made of metal such as iron or aluminum, and has the ground potential. Further, when dust or particles such as particles existing inside the vacuum chamber 112 are electrified by static electricity or the like, if a potential of the sample 200 is negative, the dust or particles such as particles that are positively electrified are attracted by the electric field and move toward the sample 200.
According to this example, the entire periphery of the sample 200 to which a negative potential is applied is surrounded by the dust collecting electrode 122, and a voltage more negative than the voltage applied to the sample 200 is applied to the dust collecting electrode 122. Therefore, most undesired objects such as dust or particles attracted by the electric field can be trapped by the dust collecting electrode 122. Thus, a probability that the dust or particles such as particles reach the sample 200 and adhere to the sample surface can be largely reduced. In this way, adhesion of dust or particles to the surface of the sample 200 can be reduced largely.
In this example, the gap control plate 124 is further disposed, which prevents dust or particles such as particles from moving along an orbit distant from the dust collecting electrode 122 and adhering to the surface of the sample 200. By disposing the gap control plate 124, attraction force of the dust collecting electrode 122 for dust or particles such as particles moving along an orbit distant from the dust collecting electrode 122 is decreased, and for this reason, a probability that the dust or particles such as particles are trapped by the dust collecting electrode 122 is decreased in inverse proportion to a distance. In order to prevent the decrease of probability of trapping the dust or particles, when a negative voltage is applied to the sample 200, electric field intensity A between the sample 200 and the dust collecting electrode 122 is set to be negative (A<0). Thus, attraction force of the dust collecting electrode 122 is increased, and hence the probability that the dust collecting electrode 122 traps the dust or particles such as particles can be increased. In addition to that, electric field intensity (absolute value) B between the gap control plate 124 and the dust collecting electrode 122 is adjusted so that 0.1≦B (absolute value)≦10 kV/mm is satisfied. Thus, the probability that the dust collecting electrode 122 traps the dust or particles such as particles can be further increased.
For instance, a negative voltage of −1 to −5 kV is applied to the sample 200, and a negative voltage of −1.5 to −10 kV that is more negative than the negative voltage applied to the sample 200 by −0.5 to −5 kV is applied to the dust collecting electrode 122. It is supposed that the gap control plate 124 has the ground potential, the distance L1 between the sample 200 and the dust collecting electrode 122 is 10 mm, and a distance Z1 between the gap control plate 124 and the dust collecting electrode 122 is 8 mm. Then, the electric field intensity A between the sample 200 and the dust collecting electrode 122 becomes negative (A<0), and the electric field intensity (absolute value) B between the gap control plate 124 and the dust collecting electrode 122 becomes 0.19 to 1.25 kV/mm (=1.5 to 10 kV/8 mm). In particular, when a voltage of −5 kV is applied to the dust collecting electrode 122, the electric field intensity (absolute value) B becomes 0.625 kV/mm (=5 kV/8 mm), which is an effective condition. In this case, the voltage is set not to exceed 10 kV/mm as a withstand voltage of the space so that occurrence of discharge in the space can be prevented.
By disposing the first dust cover 140 is disposed, it is possible to prevent dust or particles such as particles from scattering toward the surface of the sample 200 and adhering to the sample surface. In addition, by disposing the second dust cover 142 on the outside of the ultrasonic motor 136 to be a source of particles, it is possible to prevent dust or particles such as particles scattering from the ultrasonic motor 136 from entering inside the vacuum chamber 112. Prevention of dust or particles such as particles from scattering from the source thereof to the inside of the vacuum chamber 112 is effective particularly in the case where a wall friction drive type motor such as a Piezo-actuator is used.
In this example, as illustrated in
Further, as illustrated in the figure, the cable 152 connected to the fixing plate 154 fixed to the stage 100 extends linearly from the stage 100 to the wiring box 150, passes through a slit 150a provided to the wiring box 150 to enter the inside of the wiring box 150, and then turns downward and is reversed by 180 degrees. Then, as described above, the other end of the cable 152 is mechanically fixed to the movement plate 158 disposed inside the wiring box 150, and the tip thereof is connected to the terminal strip 156. Thus, when the stage 100 moves in the X direction, the cable 152 is bent only at the flexion part 152a in the wiring box 150.
Inside the wiring box 150, there is disposed guide rollers 160 extending in the Y direction (perpendicular to the paper plane of
Note that, the movement plate 158 is disposed in a movable manner in the above-mentioned embodiment, but it is possible to absorb a variation of the cable 152 due to movements of the stage 100 in the X direction and in the Y direction only by expansion and contraction of the flexion part 152a of the cable 152. Then, a fixing plate may be used instead of the movement plate to fix the cable 152 mechanically.
In this way, the bending part of the cable 152 is entirely inside the wiring box 150, and the hole communicating inside and outside of the wiring box 150 is small. Therefore, the probability that dust or particles generated in the wiring box 150 go outside the wiring box 150 is significantly decreased, and most of the dust or particles adhere to the inner wall of the wiring box 150. Further, in this example, a dust collecting electrode 162 for wiring box is disposed inside the wiring box 150, and a voltage for attracting the dust or particles is applied to the dust collecting electrode 162. Thus, the probability that the dust or particles such as particles scatter from the wiring box 150 to the outside can be reduced more.
It is possible to take measures of (1) using cables of equal length, (2) fixing and correcting cables with an insulock tie or the like, or (3) using a flat cable as cables. Thus, generation of particles due to friction among cables can be reduced. In other words, when a plurality of cables of equal length are fixed, the cables become one bunch. When the stage moves, flexion occurs in the cables. In this case, friction among cables can be reduced so that occurrence of dust or particles such as particles can be reduced. Alternatively, if a flat cable is used instead of the cables, a plurality of wires can be replaced by one cable so that friction among cables can be eliminated. If a flat cable having many wires is not immediately available, it is effective to combine the above-mentioned (1) and (2).
In the example described above, the dust collecting electrode 122 having a rectangular cross section is used, but a dust collecting electrode 122d having a circular cross section may be used as illustrated in
In addition, in the above-mentioned example, the dust collecting electrode 122 is disposed at a position having a predetermined interval from the sample 200, and a voltage having the same polarity as the voltage applied to the sample 200 and an absolute value larger than the voltage applied to the sample 200 is applied to the dust collecting electrode 122. However, as illustrated in
In the example illustrated in
In the example illustrated in
Similarly to the above-mentioned example, if a potential of the sample 200 is negative, the dust or particles that are positively electrified are attracted by the electric field and move toward the sample 200. According to the example illustrated in
In the example of
Note that, as described above, second dust collecting electrodes extending linearly may be disposed along substantially the entire length of the individual sides of the first dust collecting electrode so that the second dust collecting electrodes surround substantially the entire periphery of the first dust collecting electrode. Alternatively, it is possible that the second dust collecting electrodes extending linearly are separated from each other at a mid position.
In the example of
Also in this example, in a manner substantially similar to the example illustrated in
The first dust collecting electrode 170 has a thickness of, for example, 0.1 to 5 mm and a width W3 of, for example, 5 to 50 mm similarly to the above-mentioned dust collecting electrode 122e illustrated in
For instance, a negative voltage of −1 to −5 kV is applied to the sample 200 and the first dust collecting electrode 170, and a negative voltage of −1.5 to −10 kV that is more negative than the negative voltage applied to the sample 200 and the first dust collecting electrode 170 by −0.5 to −5 kV is applied to the second dust collecting electrode 172. It is supposed that the gap control plate 124 has the ground potential, and the distance Z8 between the gap control plate 124 and the second dust collecting electrode 172 is 8 mm. Then, the electric field intensity A between the sample 200 and the dust collecting electrode 172 becomes negative (A<0), and the electric field intensity (absolute value) B between the gap control plate 124 and the second dust collecting electrode 172 becomes 0.19 to 1.25 kV/mm (=1.5 to 10 kV/8 mm). In particular, when a voltage of −5 kV is applied to the dust collecting electrode 122, the electric field intensity (absolute value) B becomes 0.625 kV/mm (=5 kV/8 mm), which is an effective condition. In this case, the voltage is set not to exceed 10 kV/mm as a withstand voltage of the space so that occurrence of discharge in the space can be prevented.
With reference to
As illustrated in
In this way, as illustrated in
According to the example of
In addition, even if the amount of the dust or particles such as particles is small, remaining in the vacuum chamber without being removed by cleaning of the vacuum chamber, the dust or particles are deposited on the upper surface of the planar structure in the vacuum chamber by action of gravity.
In the example illustrated in
In the example illustrated in
In particular, by applying the voltage independently to the plate 199 having the mesh structure, dust or particles P remaining in the vacuum chamber can be positively attracted by the plate 199 having the mesh structure, and together with gravity action of the dust or particles P, the dust or particles P can be deposited and fixed to the surface of the wall body 198 constituting the planar structure of the vacuum chamber 112 or 112a, for example.
Next, there is described a structure for enabling to image the sample surface with high contrast in the case where the insulation region and the conductive region are formed on the surface of the sample 200 according to the present invention.
In
The term “secondary electron” means an electron emitted from the sample 200 when the electron beam collides with the surface of the sample 200. The secondary electrons may include reflection electrons having reflection energy that is substantially the same as incident energy and backward scattering electrons that scatter backward in addition to the so-called secondary electrons, as long as the electrons are emitted from the sample 200 when the electron beam collides with the sample surface. Electrons that are mainly detected in the “secondary electron region” are secondary electrons that are emitted from the sample 200 in a manner according to the cosine rule.
In addition, the “mirror electron” means an electron that is reflection of the electron beam that is irradiated toward the surface of the sample 200 and does not collide with the sample surface but changes the propagation direction oppositely in the vicinity of the sample surface. For instance, if the sample surface has a negative potential and landing energy of the electron beam is small, there is a phenomenon that the electron beam does not collide with the sample surface but changes the propagation direction oppositely due to the electric field near the sample surface. In the sample observation apparatus and the sample observation method according to the present invention, such electrons that do not collide with the sample surface but change the propagation direction oppositely as reflection are referred to as mirror electrons.
In
Then, as the landing energy (LE) is decreased to 2 eV or lower, the mirror electrons increase gradually to be the “transition region” in which the mirror electrons and secondary electrons are mixed. As illustrated in
In addition, when the landing energy (LE) becomes −2 eV or lower, the mirror electron region appears in which emission of the secondary electrons does not occur and emission amount of the mirror electrons is constant. In this region, the detector current does not depend on an aperture diameter of the NA adjustment aperture plate 360. Therefore, it can be considered that the mirror electrons are concentrated in a range of φ300 μm or smaller and φ10 μm or larger at the position of the NA adjustment aperture plate 360. This is because the mirror electron does not collide with the sample surface but is reflected, and therefore has good directivity and high straightness.
Note that, in the example illustrated in
In contrast, in the transition region, some of the irradiation electron beams do not collide with the sample surface but are reflected to the front of the sample surface to be mirror electrons, and others of the irradiation electron beams collide with the sample surface so that the secondary electrons are emitted from the inside to the outside of the sample. Here, in the same manner as in the mirror electron region, if the irradiation beam enters the sample surface perpendicularly, the mirror electron is reflected perpendicularly to the sample surface so that the propagation direction of the mirror electron is constant. On the other hand, the secondary electrons are emitted in various directions so that the emission amount is proportional to cosine of an angle between the normal of the sample surface and the emission direction (observation direction), namely according to the so-called “cosine rule”. Then, a ratio of the secondary electrons to the mirror electrons becomes higher as the landing energy becomes higher (toward the right side in
In other words, as illustrated in
In the above-mentioned example, the range of landing energy from −2 eV to 2 eV corresponds to the transition region, namely the region where the mirror electrons and the secondary electrons are mixed. However, this landing energy range can change depending on the sample to be observed. The inventors of the present invention have found from various experiments that use of the irradiation electron beam having landing energy in the transition region is effective for high contrast observation of a sample surface pattern, in particular, high contrast observation of a sample surface on which an insulation region and a conductive region are formed.
According to study by the inventors of the present invention, it is found that when the lowest landing energy of the transition region is denoted by LEA while the highest landing energy is denoted by LEB, it is preferred to set the primary landing energy (LE) of the electron beam for imaging to a value that satisfies LEA≦LE≦LEB or LEA≦LE≦LEB+5 eV. Hereinafter, this is described in detail.
According to various experiments carried out by the inventors of the present invention, it is confirmed that the range in which LEA to LEB is −5 eV to +5 eV is a preferred range in many cases.
Further, a gradation difference occurs due to a difference of forming state of mirror electrons between the insulation region and the conductive region. As the gradation difference is larger, higher contrast is formed. In other words, a difference of material or structure causes a difference of forming state of mirror electrons so that the gradation difference is formed. In order to generate high contrast between the insulation region and the conductive region in the obtained image, it is very important how the above-mentioned landing energy (LE) is set. Specifically, it is very effective for obtaining high contrast to use the landing energy (LE) in the region satisfying LEA≦LE≦LEB (for example, −5 eV to +5 eV) or the region satisfying LEA≦LE≦LEB+5 eV (for example, −5 eV to +10 eV (=(5+5)eV)).
With reference to
In addition, there is a luminance difference between the conductive material and the insulation material in each of the transition region and the secondary electron region. The transition region has a higher luminance difference between the conductive material and the insulation material, and as a result, has a higher material contrast. The reason is considered to be that not only the secondary electrons but also mirror electrons having high directivity are detected in the transition region, and therefore the signal amount is increased so that the luminance is enhanced.
In this way, if a sample surface image is obtained in the transition region in which the secondary electrons and the mirror electrons are mixed, material contrast between the conductive material and the insulation material can be enhanced.
When the electron beam irradiates the sample surface in the transition region in advance before imaging, the potential of the conductive material remains to be the ground potential while the insulation material is electrified so that the potential is changed by a few eV negatively. As a result, energy (speed) of electron is different between the electron having structural information of the conductive material and the electron having structural information of the insulation material.
Further, when the electrons having different speeds pass through the E×B deflector 340 (see
The E×B deflector 340 is a means for generating an electric field E and a magnetic field B. An electron passing through the E×B 340 receives a force FE=e·E from the electric field and a force FB=e·(v×B) from the magnetic field. Here, e is the charge of electron that is 1.602×10−19° C., and E and B are the electric field (V/m) and the magnetic field (Wb/m2), respectively.
In these forces, the force FE=e·E due to the electric field does not depend on the electron speed v (m/s), but the force FB=e·(v×B) due to the magnetic field depends on the electron speed v (m/s).
Usually, a condition (Wien condition) is set for the electron emitted from the conductive substrate, namely the sample, to propagate straight through the E×B deflector 340. However, because of the above-mentioned reason, when the electron speed v (m/s) changes, the force affected by action of the magnetic field changes, and hence the orbit of the electron after passing through the E×B deflector 340 is shifted.
In other words, as described above, the E×B deflector 340 is a means for directing the orbit of the electron having structural information of the sample surface when the electron beam irradiates according to the speed of the electron beam propagating in the direction opposite to the incident direction. Further, utilizing the above-mentioned shift of the electron orbit, it is possible to guide selectively the electrons having structural information of the conductive region or the electrons having structural information of the insulation region to pass through the NA aperture 361 and to reach the detector 400.
Note that, the transition region is the energy region in which the secondary electrons and the mirror electrons are mixed. Therefore, in this energy region, electron orbits of the secondary electron and the mirror electron from the insulation region are both shifted.
In
In
A reticle usually has a contact structure in which most part of the surface of the sample 200 is occupied by the insulation material 203, and a part (the bottom of the hole 204) includes the conductive material 202. In this structure, only the electrons ec having surface structural information of the conductive material 202 are guided to the detector 400 while the electrons ei having surface structural information of the insulation material 203 are not allowed to reach the detector 400. Thus, an image with very high contrast can be obtained.
To the contrary, only the electrons ei having surface structural information of the insulation material 203 are guided to the detector 400 while the electrons ec having surface structural information of the conductive material 202 are not allowed to reach the detector 400. Thus, an image with very high contrast can be obtained.
This method of reverse of contrast is effective in particular for detecting a short defect and an open defect existing in a pattern in which areas of the conductive material and the insulation material are substantially the same on the sample surface. If an area of one of the conductive material and the insulation material is conspicuously smaller than an area of the other material in the pattern, material regions having the conspicuously small area are dotted in the material region of the large area. The electrons from the material region of the large area are slightly diverged in a light path to a detector. Because of this diverging action, an image obtained by the electrons from the material region having small area is smaller than an original image, and hence the defect detection becomes difficult. For instance, in a structure (contact plug structure) in which conductive regions having a contact plug shape of conspicuously small area are dotted in the large insulation region formed on a silicon substrate, an image formed by the electrons from the conductive region has an area smaller than the original area because of diffusion (diffraction) of electrons from the insulation region.
It is supposed that the electrons ec and ei include both the mirror electrons and the secondary electrons. In addition, separation and detection of the generated electrons according to a type of material can be applied not only to a reticle but also to a line/space pattern of a semiconductor wafer or the like in the same manner.
In the example illustrated in
As to the mirror electrons, electron orbits of the conductive material 202 and the insulation material 203 cross over at the position of the NA adjusting aperture plate 360, and form a minimum spot of 100 μm. Therefore, it is easy to separate the electrons ec having structural information of the conductive material 202 selectively without losing optical resolution by the NA adjustment aperture plate 360 by utilizing the orbit shift by the E×B deflector 340.
As the above-mentioned potential difference between the conductive material and the insulation material due to electrification is larger, positional movement in the position of the NA adjustment aperture plate 360 is also larger. Therefore, when the electrified potential difference is increased, even if the NA aperture 361 having a large aperture diameter is used, it is possible to separate the electrons ec having structural information of the conductive region 202 from the electrons ei having structural information of the insulation region 203. Then, by using the NA aperture 361 having a large aperture diameter, it is possible to increase the number of detected electrons for forming an image.
Note that, when the charged electron beam is to irradiate the insulation region 203 of the sample 200 before the electron beam for imaging irradiates, the charged electron beam only has to irradiate the surface of the sample 200 without performing imaging by the detector 400, while using the electron beam source 310 illustrated in
In
However, as illustrated in
In contrast to the above, in
In this case, for example, it is easy to set an arrangement in which all the electrons ec having structural information of the conductive region 202 pass through the NA aperture 361 while the electrons ei having structural information of the insulation region 203 hardly pass through the NA aperture 361. Then, if the position adjustment of the NA aperture 361 is performed in such a manner, the electrons ec having structural information of the conductive region can be separated from the electrons ei having structural information of the insulation region, and many of only the electrons ec having structural information of the conductive region can be guided to the detector 400. As a result, material contrast between the conductive region 202 and the insulation region 203 can be enhanced. In other words, by using the mirror electrons generated in the transition region, the electrons ec having structural information of the conductive region can be separated from the electrons ei having structural information of the insulation region 203. As a result, it becomes easy to obtain an image with high material contrast.
Usually, in order to perform such separation, a chromatic aberration corrector (monochrometer) is necessary which is constituted of a plurality of magnetic fields and electric fields. According to the electro-optical inspection apparatus and the sample observation method of the present invention, an image with high material contrast can be obtained only by position adjustment of the NA aperture 361 formed in the NA adjustment aperture plate 360 without disposing a chromatic aberration corrector.
Note that,
It should be set as appropriate according to the use whether the electrons ec having structural information of the conductive region 202 or the electrons ei having structural information of the insulation region 203 are selectively guided to the detector 400 to be detected.
As described above, the electro-optical inspection apparatus according to the present invention includes the electron beam source for irradiating the sample surface having the insulation region and the conductive region with the electron beam for imaging, the electromagnetic field generation means (E×B deflector) for directing, by an electric field and a magnetic field, the electrons having structural information of the sample surface by the irradiation with the electron beam for imaging, according to speed of the electrons propagating in the direction opposite to the incident direction of the electron beam for imaging, the detector for detecting the electrons directed by the electromagnetic field generation means (E×B) so as to obtain the sample surface image from the detected electrons, the landing energy setting means for setting the landing energy of the electron beam for imaging to the transition region in which the electrons include both the mirror electrons and the secondary electrons, the NA aperture moving mechanism for enabling adjustment of the NA aperture position defining the numerical aperture (NA) in the plane, and the charged electron beam irradiation means for irradiating the sample surface with the electron beam so as to electrify the insulation region. Then, through the position adjustment of the NA aperture by the NA aperture moving mechanism, the electrons having structural information of the conductive region and the electrons having structural information of the insulation region, which are directed differently by action of the E×B deflector, can be selectively guided to the detector.
In addition, the image processing device 500 is provided with a calculation function (calculation part), which determines whether or not a short defect exists from the image obtained from the electron having structural information of the conductive region, and determines whether or not an open defect exists from the image obtained from the electron having structural information of the insulation region. Thus, the electro-optical inspection apparatus can be used as a detection apparatus for a short defect and an open defect.
Further, the sample observation method of the present invention can be performed by using the electro-optical inspection apparatus having the above-mentioned structure. In the method, an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, and another image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region. Thus, the sample surface on which the insulation region and the conductive region are formed can be observed with high contrast, and detection of a short defect or an open defect, as well as classification of a type of the defect can be performed easily. Hereinafter, the sample observation method of the present invention is described.
In the sample observation method of the present invention, in the sample surface having the insulation region and the conductive region, the landing energy (LE) of the imaging electron beam is adjusted to the transition region in which the electrons having structural information of the sample surface include both the mirror electrons and the secondary electrons, and an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region while another image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region. In other words, in the sample observation method of the present invention, an image is obtained under the condition of a relationship where contrast is reversed between the conductive region and the insulation region.
As described above, by using the mirror electrons generated in the transition region, the electrons ec having structural information of the conductive region can be separated from the electrons ei having structural information of the insulation region 203. As a result, it becomes easy to obtain an image with high contrast. The sample observation method of the present invention utilizes this principle. In order to easily understand the feature of the method, the results of a basic study about formation of contrast between the conductive region and the insulation region are described in advance.
In
In this way, by separating the electrons ec having structural information of the conductive region from the electrons ei having structural information of the insulation region 203, the contrast can be enhanced. As a result, it is possible to obtain an image in which the insulation region 203 can be easily distinguished from the conductive region 202, and hence observation or inspection of a defect or the like can be also performed easily.
On the contrary, if the position of the NA aperture 361 of the NA adjustment aperture plate 360 is adjusted so that the electrons generated from the insulation region 203 are selectively detected, an image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region. Therefore, on the contrary to
Next, an example of setting a condition for obtaining an image with high contrast is described.
In the graph illustrated in
Contrast=(Average Gradation of Conductive Material)−(Average Gradation of Insulation Material)/((Average Gradation of Conductive Material)+(Average Gradation of Insulation Material)) (1)
In
It is understood that highest contrast is obtained when the landing energy (LE) is in the transition region.
As illustrated in
When the electrons ec having structural information of the conductive region are not separated from the electrons ei having structural information of the insulation region, the obtained contrast depends on only the luminance difference corresponding to emission efficiency of the secondary electrons of each material. In other words, the position adjustment of the NA aperture 361 cannot obtain contrast occurring in the image obtained by enhancing electrons having structural information of either region.
According to the results illustrated in
In other words, as in the present invention, by utilizing the mirror electrons generated in the transition region, the electrons ec having structural information of the conductive region are separated from the electrons ei having structural information of the insulation region, and then an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, or an image is obtained under the opposite condition where the luminance of the insulation region is higher than the luminance of the conductive region. Thus, conspicuously higher contrast can be obtained than the image obtained by sample observation without separating the electrons ec having structural information of the conductive region from the electrons ei having structural information of the insulation region.
According to the LEEM type electro-optical inspection apparatus and sample observation method, mainly the conductive region 202 has high luminance as illustrated in
As illustrated in
In this way, the LEEM type sample observation is effective particularly for observation of the sample 200 having a low ratio of the conductive material 202. In other words, for observation of the contact structure in which a ratio of the insulation material 203 in the sample surface is large, an image with high contrast can be obtained, and hence a large advantage can be obtained. In addition, on the contrary, when an image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region, observation can be performed effectively also for the sample 200 having a low ratio of the insulation material 203 and a high ratio of the conductive material 202 in the sample surface.
Although not illustrated in
The electro-optical inspection apparatus illustrated in
In the electro-optical inspection apparatus illustrated in
As described above, because the NA moving mechanism is disposed, signals from the sample surface can be selected effectively so that high contrast can be obtained. In this case, it is further effective to add the content and structure described above with reference to
In
The sliding type NA adjusting aperture moving mechanism 365 may have, for example, a structure in which the NA adjustment aperture plate 360b is sandwiched vertically by rail-like members, and a drive mechanism such as a linear motor is disposed, or a structure in which the NA adjustment aperture plate 360b is sandwiched by rotary type rail members, and a rotary type motor rotates the rotary type rail members. The sliding type NA adjusting aperture moving mechanism 365 may have various forms according to the use.
The NA adjustment aperture plate 360c illustrated in
The rotary type NA adjusting aperture moving mechanism 366 uses a rotary type motor or the like as a drive mechanism and may have a structure for switching the aperture diameter of the NA adjustment aperture plate 360c by rotation.
According to the electro-optical inspection apparatus having the structure illustrated in
With reference to
As described above, the detector 400 having the above-mentioned structure can obtain an image of a semiconductor wafer by the EB-TDI 482 using the electro-optical conditions determined when the EB-CCD 481 is used or referring to the conditions. It is also possible to evaluate a defect of the pattern by taking a review image using the EB-CCD 481 after inspection of the sample surface by the EB-TDI 482. In this case, the EB-CCD 481 can accumulate images so that noise can be reduced. Thus, it is possible to take a review image of a defect detection part with a high S/N ratio. In this case, it is further effective to use the EB-CCD 481 having a smaller pixel than the EB-TDI 482. In other words, it is possible to take an image with a large number of pixels with respect to a size of the signal enlarged by a mapping projection optical system. Thus, an image for inspection or classification/determination of the type of the defect or the like can be taken with higher resolution.
Note that, the EB-TDI 482 has a rectangular shape, for example, in which pixels are arranged in a two-dimensional manner so as to receive the electrons directly for forming an electron image. A pixel size thereof is 12 to 16 μm, for example. On the other hand, a pixel size of the EB-CCD 481 is 6 to 8 μm, for example.
In addition, the EB-TDI 482 is formed in a shape of a package 485. The package 485 itself works as a feed-through, and pins 483 of the package are connected to a camera 484 on the air side.
Adopting the structure illustrated in
As described above, as in the present invention, by utilizing the mirror electrons generated in the transition region, the electrons ec having structural information of the conductive region are separated from the electrons ei having structural information of the insulation region, and then an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, or an image is obtained under the opposite condition where the luminance of the insulation region is higher than the luminance of the conductive region. Thus, conspicuously higher contrast can be obtained than the image obtained by sample observation without separating the electrons ec having structural information of the conductive region from the electrons ei having structural information of the insulation region.
In addition, it is very effective to use the method and apparatus described above with reference to
However, according to the study performed by the inventors of the present invention, it has been found that if the insulation region and the conductive region are formed on the sample to be observed, and if it is necessary to detect both a short defect and an open defect on the sample surface with high accuracy, there could be a case where one type of defect can be detected easily while the other type of defect can be hardly detected only by obtaining an image under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, or obtaining an image under the opposite condition where the luminance of the insulation region is higher than the luminance of the conductive region.
Specifically, if an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, there is a case where a short defect can be detected easily, but an open defect can be hardly detected. On the contrary, if an image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region, an open defect can be detected easily, but a short defect can be hardly detected.
Based on this knowledge, according to the sample observation method of the present invention, an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, and another image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region. Then, based on those images, a short defect and an open defect on the sample surface are both detected with high accuracy.
In other words, in the sample observation method according to the present invention, the sample surface including the insulation region and the conductive region is irradiated with the imaging electron beam having landing energy (LE) adjusted to the transition region in which the electrons having structural information of the sample surface include both the mirror electrons and the secondary electrons. Then, images of the sample surface irradiated with the imaging electron beam are taken under the condition where the luminance of the conductive region is higher than the luminance of the insulation region (Condition A) and under the condition where the luminance of the insulation region is higher than the luminance of the conductive region (Condition B). Note that, those images may be taken first under Condition A and then under Condition B, or first under Condition B and then under Condition A.
Specifically, Condition A and Condition B are realized by position adjustment of the NA aperture plate 361 (see
In addition,
With reference to
On the other hand, with reference to
The same phenomenon occurs also in a case where the defect is incomplete.
Part (a) of
In addition,
In addition,
With reference to
On the other hand, with reference to
The reason why this phenomenon occurs is considered as follows. Specifically, when an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region (Condition A), electrons emitted from the conductive material in the vicinity of a short defect or an open defect are diffused, and due to the action, the short defect part is imaged to be wider, while the open defect part is imaged to be narrower. On the contrary, when an image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region (Condition B), electrons emitted from a short defect or an open defect are diffused, and due to the action, the short defect part is imaged to be narrower, while the open defect part is imaged to be wider.
In this way, an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, and another image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region. Thus, based on the images having reverse contrast, both a short defect and an open defect on the sample surface can be detected with high accuracy.
Hereinafter, description is given based on a specific example.
The sample used in this example has a pattern of line and space (L&S) similarly to that illustrated in
In this example, when the landing energy (LE) is 3.2 eV, the highest contrast (0.41) is obtained.
In this example, the contrast increases along with the dose, but the contrast is saturated at a dose of approximately 2 mC/cm2. In other words, it is understood that it is sufficient if the dose of the charged electron beam to be irradiated for imaging with high contrast is approximately 2 mC/cm2.
In the present invention, the electrons ec having structural information of the conductive region are separated from the electrons ei having structural information of the insulation region so that high contrast is obtained. Thus, a short defect and an open defect are both detected with high sensitivity and high accuracy. Such separation between the electrons ec having structural information of the conductive region and the electrons ei having structural information of the insulation region can be performed by position adjustment of the NA aperture. Therefore, in the present invention, distributions of electrons from the conductive region and the insulation region of the sample surface are directly observed in an NA imaging mode, and hence the position adjustment of the NA aperture can be performed with high accuracy. Hereinafter, an example of a specific procedure is described.
The projection lens 370 disposed between the NA adjustment aperture plate 360 and the detector 400 was set to a predetermined voltage of 5,500V, and a positional relationship at the position of the NA adjustment aperture plate 360 between distributions of the electrons ec having surface structural information of the conductive region 202 and the electrons ei having surface structural information of the insulation region 203 was checked in the NA imaging mode. Specifically, the dose of the charged electron beam was changed so as to check how much the change of the dose caused a shift of the distribution state (center of orbit) of the electrons ei having surface structural information of the insulation region 203 from the distribution state (center of orbit) of the electrons ec having surface structural information of the conductive region 202.
According to the results illustrated in
In addition, according to the results illustrated in
As described above, through the irradiation with the charged electron beam, the electrons ec having structural information of the conductive region can be easily separated from the electrons ei having structural information of the insulation region. As a result, high contrast can be obtained easily. This is because the irradiation with the charged electron beam causes a variation of the substrate potential (ΔV) so that the distribution of the electrons ei having surface structural information of the insulation material is shifted. This means that the shift of the distribution of the electrons ei having surface structural information of the insulation material can be estimated from the variation of the substrate potential (ΔV).
Comparing
Therefore, it is possible to estimate the shift of the center of orbit of the electron ei emitted from the insulation region 203 by knowing in advance how the optimal landing energy (LE) varies due to the electrified state (substrate potential) of the sample surface. In other words, the shift of the center position of orbit of the electron ei can be estimated from the substrate potential. Specifically, a shift of the substrate potential is read from a shift of the landing energy (LE) before and after the electrification. As described above, when the electrified state changes, energy (speed) of the electron changes, and hence the force received when the electron passes through the electromagnetic field generation means (E×B deflector) that is expressed by F=e·(v×B) also changes. Therefore, an orbit shift when the electron passes through the E×B deflector can be calculated. Further, the shift at the NA aperture position can be calculated from the orbit shift when the electron passes through the E×B deflector. Therefore, an actual shift of the center position of orbit of the electron ei can be verified.
As illustrated in
First, the landing energy (LE) of the imaging electron beam is adjusted to the above-mentioned transition region (Step 102), and the sample surface to be observed including the insulation region and the conductive region is irradiated with the imaging electron beam (Step 103).
The NA aperture position is adjusted in the plane by the NA aperture moving mechanism, and hence the center position of the NA aperture is adjusted to the center of orbit of the electron ec having structural information of the conductive region (Step 104). Then, in this state, the landing energy (LE) of the imaging electron beam is adjusted so that a difference of luminance between the insulation region and the conductive region, namely the material contrast, becomes maximum (Step 105).
Next, the sample surface is irradiated with the charged electron beam having a predetermined dose so that the insulation region is electrified (Step 106), and it is checked how much degree the center of orbit of the electron ei from the insulation region in the electrified state is shifted at the NA aperture position (Step 107). After that, Step S106 and Step 107 are repeated, to thereby determine dependence on the dose of the orbit shift of the electron ei from the insulation region in the electrified state (Step 108).
When the dependence on the dose of the orbit shift of the electron ei from the insulation region in the electrified state is determined (Yes in Step 108), an appropriate dose is determined based on the data (Step 109).
After the appropriate dose is determined, the landing energy (LE) of the imaging electron beam is adjusted again. Specifically, the sample surface is irradiated with the charged electron beam of the appropriate dose determined by the above-mentioned procedure, and in this state, the landing energy (LE) for obtaining the maximum material contrast is determined (Step 110). Then, an image of the sample surface irradiated with the imaging electron beam of this landing energy (LE) is obtained to measure the material contrast (Step 111). As described above in relation to Step 107, the center position of the NA aperture in this case is at the center of orbit of the electron ec having structural information of the conductive region. Therefore, the luminance of the obtained image is relatively high in the conductive region and relatively low in the insulation region.
Next, the center position of the NA aperture is moved by the amount of the orbit shift of the electron ei when the irradiation with the charged electron beam of the appropriate dose is performed, so that the center position of the NA aperture coincides with the center of orbit of the electron ei. Then, in this state, the material contrast is measured again (Step 112).
As described above, when this adjustment of the center position of the NA aperture is performed, the material contrast is reversed so that an image must be obtained in which the luminance of the insulation region is relatively high while the luminance of the conductive region is relatively low. Therefore, when the reverse of the material contrast is confirmed (Yes in Step 113), the process is finished (Step 114). When the reverse of the material contrast is not confirmed (No in Step 113), which means a certain problem has occurred in the procedure up to here, the process flow returns to Step 102 and the process is performed again.
According to the above-mentioned procedure, the dependence on the dose of the electron orbit shift is determined and the reverse of the material contrast is confirmed, thereby completing setting of conditions necessary for the sample observation of the present invention.
The sample observation method according to a preferred aspect of the present invention includes Step 203 in which the sample surface including the insulation region and the conductive region is irradiated with the imaging electron beam having the landing energy (LE) for obtaining the maximum material contrast, and Steps 205 and 207 in which the electrons having structural information of the sample surface irradiated by the imaging electron beam are detected so that a sample surface image is obtained. As described above, the landing energy (LE) of the imaging electron beam is adjusted to the transition region in which the electrons having structural information of the sample surface include both the mirror electrons and the secondary electrons. The steps of obtaining the sample surface image include Step 205 in which an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, and Step 207 in which an image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region.
As described above, prior to Step 203 of irradiation with the imaging electron beam, the sample surface is irradiated with the charged electron beam of an appropriate dose so that the insulation region is electrified (Step 202). Then, the substrate potential is changed, and as a result, a shift between the center of orbit of the electron ei emitted from the insulation region and the center of orbit of the electron ec emitted from the electrified region is increased. The degree of separation between the electrons ec having structural information of the conductive region and the electrons ei having structural information of the insulation region is also increased. The above-mentioned appropriate dose is determined in advance in Step S109 as described above, and it is preferred that the dose be set so that the electrification of the insulation region by the irradiation with the electron beam is saturated.
In the state where the sample surface is irradiated with the imaging electron beam in Step 203, the center position of the NA aperture is adjusted to the center of orbit of the electron ec having structural information of the conductive region so that the material contrast becomes maximum (Step 204). The image obtained under this condition is an image in which the luminance of the conductive region is relatively high while the luminance of the insulation region is relatively low (Step 205).
Next, the center position of the NA aperture is adjusted to the center of orbit of the electron ei having structural information of the insulation region so that the material contrast becomes maximum (Step 206). The image obtained under this condition is an image in which the luminance of the insulation region is relatively high while the luminance of the conductive region is relatively low (Step 207). In other words, the image obtained under this condition has reverse contrast to the image obtained in Step 205.
Note that, the adjustment of the NA aperture position in Step 206 may be performed so that the NA aperture position is adjusted by the amount of the orbit shift based on the orbit shift of the electron ei determined in advance in Step 107.
In other words, the sample observation method according to this aspect includes Step S303 in which the sample surface including the insulation region and the conductive region is irradiated with the imaging electron beam having the landing energy (LE) for obtaining the maximum material contrast, and Steps 305 and 307 in which the electrons having structural information of the sample surface irradiated by the imaging electron beam are detected so that a sample surface image is obtained. The steps of obtaining the sample surface image include Step S305 in which an image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region, and Step S307 in which an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region.
Similarly to the procedure of
In the state where the sample surface is irradiated with the imaging electron beam in Step S303, the center position of the NA aperture is adjusted to the center of orbit of the electron ei having structural information of the insulation region so that the material contrast becomes maximum (Step 304). The image obtained under this condition is an image in which the luminance of the insulation region is relatively high while the luminance of the conductive region is relatively low (Step 305).
Next, the center position of the NA aperture is adjusted to the center of orbit of the electron ec having structural information of the conductive region so that the material contrast becomes maximum (Step 306). The image obtained under this condition is an image in which the luminance of the conductive region is relatively high while the luminance of the insulation region is relatively low (Step 307). In other words, the image obtained under this condition has reverse contrast to the image obtained in Step 305.
Note that, the adjustment of the NA aperture position in Step 306 may be performed so that the NA aperture position is adjusted in the direction opposite to the shift direction by the amount of the orbit shift based on the orbit shift of the electron ei determined in advance in Step 107.
As described above, when an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, a short defect can be detected easily, but there is a case where it is difficult to detect an open defect. In addition, on the contrary to this, when an image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region, an open defect can be detected easily, but there is a case where it is difficult to detect a short defect. Therefore, in order to detect both the short defect and the open defect on the sample surface including the insulation region and the conductive region with high accuracy, it is not sufficient to obtain an image only under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, or on the contrary, to obtain an image only under the condition where the luminance of the insulation region is higher than the luminance of the conductive region.
According to the sample observation method of the present invention, an image is obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, and another image is obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region. Thus, based on the images, both a short defect and an open defect on the sample surface can be detected with high accuracy.
In other words, by using the sample surface image obtained by the above-mentioned sample observation method according to the present invention, it is possible to detect presence or absence of a short defect with high sensitivity and high accuracy from the image obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, and to detect presence or absence of an open defect with high sensitivity and high accuracy from the image obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region. Therefore, the method can be used also as a high-sensitivity and high-accuracy sample inspection method.
Hereinafter, an example is described in which the sample surface defect inspection was performed by the above-mentioned method.
A sample to be observed was prepared similarly to that illustrated in
When the sample observation was performed, an acceleration voltage of the electron source beam was set to −4,005V, and a surface potential of the sample 200 was set to −4,002.6V. Therefore, the landing energy (LE) of the imaging electron beam was 2.4 eV in the transition region in which the electrons having structural information of the sample surface included both the mirror electrons and the secondary electrons. In addition, the aperture diameter of the NA aperture 361 was set to 100 to 300 μm, the insulation region was electrified by being irradiated with the charged electron beam prior to imaging (electrified amount was 2 mC/cm2), and current density of the imaging electron beam was set to 1 mA/cm2. Imaging was performed in this state. Note that, an inspection pixel size for defect inspection was set to 29 nm square by setting the magnification of the electro-optical system lens. In addition, an inspection speed was set to 50 mega pixels per second (MPPS).
As understood from those results, according to the image obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, a short defect can be detected with high accuracy, and on the other hand, according to the image obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region, an open defect can be detected with high accuracy. This means that an open defect may be overlooked according to the image obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region, while a short defect may be overlooked according to the image obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region.
In contrast, as in the present invention, if it is determined whether or not a defect exists from an image obtained under the condition where the luminance of the conductive region is higher than the luminance of the insulation region and an image obtained under the condition where the luminance of the insulation region is higher than the luminance of the conductive region, both a short defect and an open defect having a size larger than at least 25 nm can be detected with high sensitivity and high accuracy.
The electro-optical inspection apparatus and the sample observation method of the present invention described above can be used, for instance, in a semiconductor manufacturing process, for observation or inspection of a surface of a semiconductor wafer after processing the semiconductor wafer. Using the electro-optical inspection apparatus and the sample observation method according to the present invention for observing the semiconductor wafer whose sample surface includes an insulation region and a conductive region, an image with high contrast can be obtained for inspecting quality of the semiconductor wafer. Thus, the electro-optical inspection apparatus and the sample observation method of the present invention can be effective means for manufacturing a semiconductor wafer without a defect. In this way, the electro-optical inspection apparatus and the sample observation method according to the present invention can be used appropriately in a semiconductor manufacturing method.
Here, when a scanning type or mapping projection type electron microscope, namely an electro-optical inspection apparatus, is used for wiring inspection or defect inspection of a sample surface, the sample surface may be charged up (electrified) due to friction with air during air conveyance or irradiation with an electron beam in vacuum. When the charge-up occurs on the sample surface, there is a problem that the electron beam irradiating the sample surface is detected as being affected by the secondary electrons charged up in the sample, and hence an image of the sample is blurred.
As a measure against the above-mentioned problem that an image of the sample is blurred because the charge-up occurs on the sample surface, for example, there is proposed a method of inspecting a defect of a sample as described in PCT 1999-046798 (Patent Document 5). In this method of inspecting a defect of a sample, a difference of distance to be focused is converted into a charge-up amount on the sample. In addition, Japanese Patent Application Publication No. 2002-033068 (Patent Document 6) discloses a sample defect inspection, in which a scanning type electron microscope is used, and a retarding voltage is applied to the sample for suppressing the charge-up of the sample.
In a static electricity removing method for the charged-up sample, ionized gas in air or in a certain type of gas is usually used. However, in this static electricity removing method, there is a fear that the sample is charged up again after the removal of static electricity due to friction with air during air conveyance. In addition, when removing static electricity due to the charge-up of the sample by the irradiation with the electron beam in vacuum, it is also necessary to return the sample once to the air side, which is not efficient.
However, in the method disclosed in Patent Document 5, a map indicating a difference of distance to be focused of the charged-up sample (voltage map) is generated, and the focus of the charged-up sample is merely changed based on the map. Therefore, static electricity due to the charge-up on the sample surface is not removed. In addition, in the method disclosed in Patent Document 6, in order to suppress the charge-up of the sample due to the irradiation with the electron beam, a retarding voltage RTD is merely applied. Therefore, there is a fear that the sample surface is charged up again, and static electricity due to the charge-up on the sample surface by natural electrification is not removed.
Hereinafter, an inspection method for a sample surface according to the present invention is described, which is capable of efficiently removing static electricity due to the charge-up on the sample surface caused not only by electrification of an electron beam but also by natural electrification of air.
First, a principle of setting potential distribution on the sample surface according to an embodiment of the present invention is described in detail.
Landing energy LE=(Retarding Voltage RTD)−(Acceleration Voltage Vacc) (2)
However, the potential of the sample 200 is not always 0V depending on natural electrification of the sample 200 or pre-irradiation of the sample 200 with an electron beam. Therefore, effective landing energy LEeff is expressed by Expression (3) below where ΔV represents the sample surface potential.
LEeff=LE+ΔV (3)
In other words, the effective landing energy LEeff illustrated in
In the relationship between the effective landing energy LEeff and the mean luminance meanDN illustrated in
Next, with reference to
For instance, it is supposed that an arbitrary region of the sample surface is irradiated with the electron beam, and mean luminance distribution (luminance difference) ΔDN on the sample surface is detected. Here, it is supposed that the luminance difference ΔDN of the arbitrary region of the sample surface is determined by the following expression.
Luminance Difference ΔDN=(Mean Luminance meanDN)−(Standard Luminance A)
Then, the case where the mean luminance distribution (luminance difference) ΔDN is positive, namely, the luminance difference ΔDN is higher than the standard luminance A, and the case where the mean luminance distribution (luminance difference) ΔDN is negative, namely, the luminance difference ΔDN is lower than the standard luminance A are studied. It is supposed that an arbitrary region of the sample surface is irradiated with the electron beam having the reference landing energy LE0 of 2.5 eV, for example. If the mean luminance meanDN is higher than the standard luminance A, it means that the sample surface potential ΔV is shifted to the negative side, namely, the sample surface is electrified negatively as illustrated in
Next, with reference to
The image of “WITHOUT PRE-DOSE” illustrated in (a) of
The image of “3 eV” illustrated in (b) of
The image of “8 eV” illustrated in (c) of
Similarly, the image of “18 eV” illustrated in (d) of
Next, with reference to
As to the sample surface potential ΔV determined from the luminance difference ΔDN illustrated in (a) to (d) of
According to the above-mentioned result, the sample surface potential ΔV can be electrified positively or negatively by changing the effective landing energy LEeff to be set for the electron beam irradiating the sample surface. Thus, it is possible to reset the electrified state of an arbitrary region of the sample surface to a standard potential (or to an arbitrary potential state) by irradiating the region with the electron beam having the luminance difference ΔDN obtained by subtracting the standard luminance A, which is obtained when the sample surface is irradiated with the electron beam having the reference landing energy LE0, from the mean luminance meanDN, which is obtained when the sample surface is irradiated with the electron beam having an arbitrary landing energy LE, namely the electron beam having the landing energy LE that acts opposite electrification with respect to a result of determination as to whether the sample surface is electrified positively or negatively. The following embodiment has a feature in that the function of removing static electricity of the electrification on the sample surface or setting a potential of the sample surface to an arbitrary potential using this principle is applied to an apparatus for inspecting a sample surface.
The luminance difference ΔDN of each region illustrated in
Using position information (XY coordinates) of each region of the sample surface and potential information of each region of the sample surface obtained from
In addition, by adjusting the effective landing energy LEeff of the electron beam irradiating the sample surface by using the above-mentioned Pre-Dose, it is possible to set the sample surface to a dark field (electrified positively) or a bright field (electrified negatively). The sample surface is set to the dark field mainly for inspecting dust or particles (made of insulation material) on the sample (conductor such as Si or Cr). In this case, the entire sample surface is set to the dark field so that the dust or particles on the sample glitter for detection.
As described above, in the method of setting the potential distribution of the sample surface according to the embodiment of the present invention, the electron beam having an arbitrary landing energy LE is irradiated to scan the region in which the potential distribution of the sample surface should be known. Then, luminance of the region is detected, and the luminance difference between the standard luminance and the luminance of the scanned region is determined, to thereby determine the (X,Y) distribution of the luminance difference ΔDN of each scanned region. As to this (X,Y) distribution of the luminance difference ΔDN, a difference from the standard luminance is determined, and hence it is possible to determine a shift of the landing energy LE from the reference landing energy LE0 corresponding to the standard luminance in a certain region, namely a variation of the potential ΔV [V] of the sample surface in a certain region. In addition, the above-mentioned Pre-Dose may be performed according to the variation of the potential ΔV [V] of the sample surface so that the potential distribution of the sample surface can be adjusted.
Here, a principle of electrifying the sample surface potential ΔV to a positive potential or a negative potential is described. An electron density Je is calculated from an electron current value of the electron gun for generating the primary electron beam irradiating the sample surface. Based on this current density Je and a blanking release time TS (time while the electron beam is irradiated) of a blanking signal (for stopping the electron beam), the dose of the sample surface is expressed by Expression (5) below. Note that, blanking of the blanking signal means that the primary electron beam is temporarily broken when the sample surface is not irradiated with the primary electron beam.
Dose=Js·τs (5)
When sample surface information, for example, a thickness of resist (for example, insulation material such as oxide) is denoted by d, and a specific dielectric constant of the resist is denoted by ∈r, capacitance C0 per unit area of the sample surface is expressed by Expression (6) below.
C0=∈r·∈0·S/d (6)
In Expression (6), S denotes a unit area of 1 cm2, and ∈0 denotes a dielectric constant of vacuum.
In addition, because C0V=Q holds, Q is expressed by Expression (7) below.
Q=C0·ΔV (7)
In Expression (7), Q denotes a total electron amount irradiating the sample surface. When the sample surface is irradiated with the electron beam having the landing energy LE [keV], the total electron amount Q is expressed by Expression (8) below, where η denotes a secondary electron emission ratio.
Q=Dose·(1−η) (8)
Here, based on Expressions (7) and (8), the following expression holds.
Q=Dose·(1−η)=C0·ΔV
By solving this expression with respect to the secondary electron emission ratio η, Expression (9) below is obtained.
η=1−(C0·ΔV)/Dose (9)
Expression (9) indicates that the secondary electron emission ratio η is uniquely related to a specific dielectric constant ∈r of the substance forming the sample surface.
In other words, when Expression (6) is substituted into Expression (9) so as to solve with respect to the specific dielectric constant ∈r of the substance, a relationship between the secondary electron emission ratio η and the specific dielectric constant ∈r of the substance can be expressed by Expression (10) below.
η=1−{(∈0·S·ΔV)/(d·Dose)}·∈r (10)
In addition, as illustrated in
Next, with reference to
First, with reference to
Q=Dose_in−Dose_out<0 (11)
Based on the relationship expressed in Expression (10), the secondary electron emission ratio η is expressed by Expression (12) below.
η=Dose_out/Dose_in (12)
Based on Expression (11), a variation of the potential ΔV generated on the sample surface is expressed by Expression (13) below.
Dose_in(1−η)<0 (13)
In addition, as illustrated in
Q=Dose_in−Dose_out−Dose_th (14)
Next, the transmittance a of the primary electrons is expressed by α=Dose_th/Dose_in. Then, the total electron amount Q that is accumulated inside the sample is expressed by Expression (15) below.
Q=Dose_in(1−η−α) (15)
Here, as to an increase of the sample surface potential ΔV, the transmittance a can be expressed by Expression (16) below from a relationship between Expressions (15) and (7).
α=1−η−(ΔV·C0/Dose) (16)
(where, Dose_th=Dose)
Q is 0 in the case of
α=1−ƒ (17)
The transmittance a is a function of landing energy LE of the electron beam for irradiation and a thickness t of the sample (in particular, a thickness of the resist), and hence an increase of the sample surface potential ΔV can be 0 under the condition satisfying f(LE, t)=1−η where α=f(LE, t). Thus, an influence of the charge up (electrification) of the sample surface can be minimized. On the contrary, if the thickness t of the sample is known, the transmittance a can be controlled by combination with the landing energy LE, and hence the condition can be used differently so that the sample surface is electrified positively if f(LE, t)=α>1−η holds, while the sample surface is electrified negatively if f(LE, t)=α<1−η holds. Using this principle, it is possible to equalize the potential distributions by examining a potential distribution existing locally on the sample surface and by irradiating with the electron beam having the landing energy LE for canceling the potential.
As described above, in a sample surface observation apparatus or a sample surface inspection apparatus using an electron beam for inspecting a sample, energy of the electron beam irradiating the sample is set according to physical properties of the surface material occupying most of the sample surface to be observed or inspected. In this setting, by setting the energy of the electron beam so that f(LE, t)=1−η holds as described above, an influence of electrification of the sample surface can be minimized so that a clear image or an inspection result with high sensitivity can be obtained. For instance, when the electron beam irradiates a sample surface of a sample having regions of different thicknesses t made of the same material, if the secondary electron emission ration of the sample surface can be determined first by irradiating the primary electron beam having a condition (α=0) such that the electron beam cannot penetrate absolutely, it is possible to calculate the transmittance a of the electron beam in the region having a small thickness t made of the same material (such thickness that the irradiated electron beam can penetrate). In addition, by using the above-mentioned parameters such as the luminance difference (ΔDN), the dose, and the variation of the sample surface potential ΔV, it is also possible to examine the distribution of capacitance C of the sample surface, the distribution of the secondary electron emission ratio η, and the distribution of the thickness t of the sample.
In the sample observation system illustrated in
A thermal electron emission type electron gun 2132 is used as the electron beam generating source 2120. This thermal electron emission type electron gun 2132 uses mainly lanthanum hexaboride (LaB6), but it is possible to use a filament made of tungsten, or a cathode made of a tungsten-based compound such as thoriated tungsten (Th—W) or tungsten carbide (W2C), or made of oxide such as (barium (Ba), strontium (Sr), or calcium (Ca))CO3.
The primary electro-optical system 2130 is means for guiding the first electron beam generated from the thermal electron emission type electron gun 2132 to the sample 200, and includes an aperture 2122 and an electrostatic lens 2124.
The first electron beam generated from the thermal electron emission type electron gun 2132 has a circular, elliptical, or rectangular cross section formed by the aperture 2122 and the electrostatic lens 2124 of the primary electro-optical system 2130, and is guided to the sample 200 for irradiation. It is desired that a size (beam diameter) of the first electron beam formed in a circular, elliptical, or rectangular shape be generally slightly larger than an element area of the TDI, the EB-TDI, the CCD, or the EB-CCD as the image sensor 2150. In addition, the size of the primary electron beam may be adjusted for each image sensor 2150, or may be set conforming to a size of the largest image sensor 2150.
As to the primary electron beam, a combination of the acceleration voltage Vacc for accelerating to arbitrary energy in the primary electro-optical system 2130 and the retarding voltage RTD is adjusted so as to adjust the landing energy LE of the first electron beam when the sample 200 is irradiated. The acceleration voltage Vacc is adjusted by an acceleration voltage adjustment part 2162, for example, and the retarding voltage RTD is adjusted by a sample voltage adjustment part 2166 disposed in the X-Y stage 2112, for example. The combination of the acceleration voltage Vacc for setting energy of the primary electron beam and the retarding voltage RTD is changed according to desired information obtained from the sample 200.
For instance, when a secondary electron image of the sample 200 is obtained, the acceleration voltage Vacc is set to 100 eV to a few thousands eV, for example, and the retarding voltage RTD is set to a set voltage of the secondary electro-optical system 2140 (straight propagation condition of an E×B filter 2134 of the secondary electro-optical system 2140). In the case of obtaining an electron (mirror electron) image generated by perfectly elastic collision between the primary electron beam irradiating the sample 200 and material of the sample 200, the retarding voltage RTD is adjusted. In addition, in the case of obtaining an image of mirror electrons as reflection of the primary electron beam that irradiates the sample and is reflected in the vicinity of the surface of the sample 200 due to an influence of the electrified surface potential of the sample 200, the landing energy LE is set to 0 eV to a few tens eV. In other words, by changing the combination of the acceleration voltage Vacc and the retarding voltage RTD, it is possible to obtain a relationship between the landing energy LE and the luminance difference as illustrated in
The X-Y stage 2112 is a support table for supporting the sample 200 and can move at least in the horizontal direction. The X-Y stage 2112 is supported on a vibration-preventing table 2114 so that vibration from the floor is not transmitted to the X-Y stage 2112 by action of the vibration-preventing table 2114. In addition, action of the X-Y stage 2112 is controlled by an external stage control unit 2164. The X-Y stage 2112 is provided with the sample voltage adjustment part 2166 for adjusting the retarding voltage RTD to be applied to the sample 200 as described above. The retarding voltage RTD to be applied to the sample 200 is adjusted so as to adjust the landing energy LE of the primary electron beam together with the acceleration voltage Vacc.
The secondary electro-optical system 2140 includes the E×B filter 2134 and a plurality of electrostatic lenses 2136. In the case of the mapping projection type electron microscope illustrated in
The image sensor 2150 can also perform scan imaging by time delay integration (TDI). Before the TDI, there are disposed the micro channel plate (MCP) for amplifying the electron, the fluorescent screen for converting the amplified electron into light, a fiber optic plate (FOP) for guiding the light to the TDI, and the like. In addition, instead of the TDI, it is possible to use the EB-TDI that can directly receive the electrons (second electron beam) and convert the same to an image. In addition, in the case of taking a still image other than a scan image, it is possible to use a charge coupled device (CCD) instead of the TDI and to use an EB-CCD instead of the EB-TDI. Further, it is possible to dispose the EB-CCD before the TDI so as to use the TDI for the scan image and to use the EB-CCD for the still image. As the image sensor 2150, various types of image sensors can be used, which can detect the electrons (second electron beam) generated from the sample surface simultaneously by a plurality of pixels as a plane.
The image sensor 2150 is connected to a storage device 2152. The storage device 2152 is connected to a control part 2160. The control part 2160 includes the retarding voltage adjustment part 2166 and the acceleration voltage adjustment part 2162.
The X-Y stage control unit 2164 is controlled by the control part 2160 so as to control the moving direction and the moving distance of the X-Y stage 2112 so that the surface of the sample 200 on the X-Y stage 2112 is located at a desired position with respect to the irradiating electron beam.
Next to the vacuum chamber 2174 housing the X-Y stage 2112, there is disposed a preliminary environmental chamber 2214 that can communicate with the vacuum chamber 2174 via a gate valve 2218 that is opened and closed. The preliminary environment chamber 2214 includes a temporary waiting place 2216 for the sample 200 before and after the inspection to wait. In addition, the preliminary environment chamber 2214 is provided with a dry pump 2210 and a turbo molecular pump 2212 that can perform vacuum evacuation so that the vacuum chambers 2172, 2174, and 2176 and the preliminary environment chamber 2214 can be evacuated to vacuum. Note that, the turbo molecular pump 2212 and the dry pump 2210 may further be disposed in each of the vacuum chambers 2172, 2174, and 2176 as necessary.
The storage device 2152 stores sample surface image information obtained by the image sensor 2150. The sample surface image information stored in the storage device 2152 is output to the control part 2160. The control part 2160 controls the retarding voltage adjustment part 2166 and the acceleration voltage adjustment part 2162 so as to adjust the effective landing energy LEeff with respect to the primary electron beam, and controls the stage control unit 2164 so as to control a moving position of the X-Y stage 2112 so that an arbitrary region of the sample surface is irradiated with the primary electron beam. The image sensor 2150 detects the secondary electron beam coming back from the sample surface, and outputs the detected sample surface image to the storage device 2152 to store the sample surface image. The storage device 2152 outputs the stored image to the control part 2160. In the control part 2160, a potential distribution determination part 2163 determines the potential distribution of the sample surface based on the sample surface image input from the storage device 2152, and a potential distribution correction part 2164 adjusts the potential distribution of the sample surface to an arbitrary potential distribution based on the determined potential distribution.
The potential distribution determination part 2163 determines the potential distribution of the surface of the sample 200 using the method described above as the principle. The potential distribution correction part 2164 adjusts the potential distribution of the surface of the sample 200 to an arbitrary potential distribution using the method described above as the principle.
Here, the adjustment method of the potential distribution of the sample surface performed by the control part 2160 is described with reference to a flowchart illustrated in
Next, the primary electron beam having the reference landing energy LE0 set therefor irradiates the region to be inspected of the surface of the sample 200 or the entire region of the surface of the sample 200. The luminance difference ΔDN is determined from the standard luminance A and the mean luminance meanDN detected by the electron beam irradiation including the “Pre-Dose” described above, and the potential ΔV of the region to be inspected or the entire region of the surface of the sample 200 is determined from the graph of
Next, in Step S402, as to the obtained luminance distribution of the sample 200, the potential distribution determination part 2163 of the control part 2160 determines the luminance difference ΔDN from a difference between the mean luminance meanDN and the standard luminance A of the sample surface. Then, with reference to the graph of
Next, in Step S403, correction of the potential distribution of the sample 200 is performed, in which the retarding voltage adjustment part 2166 and the acceleration voltage adjustment part 2162 adjust the landing energy LE to cancel the potential of each region of the sample 200 or to electrify the same to an arbitrary potential based on the obtained potential ΔV and the position information (X-Y coordinates) of the region to be measured of the surface of the sample 200. In Step S401, the sample surface is irradiated with the primary electron beam again while the landing energy LE is adjusted for each region of the sample 200 irradiated with the primary electron beam, and hence the static electricity of the electrified sample 200 is removed or set to an arbitrary potential. The potentials of the inspection regions of the sample 200 are all equalized by the removal of static electricity or potential setting, and a variation of the sensitivity due to a difference of the electrified state among the inspection regions of the sample hardly occurs in the image detected when being irradiated with the primary electron beam. In addition, even in the case where the sample is inspected repeatedly, a variation of the potential distribution hardly occurs among the inspection regions.
When the sample 200 is inspected, an influence of the electrification can be removed again by the adjustment of the retarding voltage RTD. In addition, when the potential of the surface of the sample 200 is adjusted by the retarding voltage RTD, the dose to the sample can be known from the current density of the electron gun and the inspection speed of the inspection apparatus. Therefore, an increase of potential of the surface of the sample 200 can be determined in advance by one inspection, and the effective landing energy LEeff can be constant by correcting the increase of potential by adjustment of the retarding voltage RTD. In other words, the luminance difference ΔDN between the mean luminance and the standard luminance of the surface of the sample 200 is converted into the potential distribution, and the converted potential distribution is used so that the potential of the surface of the sample 200 can be set to be uniform (static electricity is removed to 0V), or can be set to an arbitrary potential (a positive potential or a negative potential).
Next, the case where the sample 200 to be inspected is exchanged or the sample 200 is inspected again is described. When the sample 200 is exchanged or inspected again, there are a case where the potential distribution of the sample surface is changed and further a case where the entire potential distribution of the sample surface is changed. Therefore, when the sample is exchanged or the same sample is inspected again, it is necessary to adjust the landing energy LE for each inspection. In this case, luminance of an arbitrary region of the surface of the sample 200 is checked, and using the luminance distribution of the sample 200 described above, the landing energy LE is adjusted based on a difference between the mean luminance meanDN and the standard luminance A obtained from the luminance distribution. Thus, the potential distribution of the surface of the sample 200 can be adjusted again to be uniform.
As described above, as to the effective landing energy LEeff, optimized parameters other than the landing energy LE (for example, the NA position and the size of the inspection apparatus, the Wien condition, and the current density) are set according to the inspection recipe (characteristics or the like of the sample (mask)). Thus, the inspection with good reproducibility can be realized.
Note that, the electro-optical inspection apparatus is used in a case where a defect of the sample surface pattern is inspected, in a case where dust or particles on the sample surface are detected, in a case where dust or particles on a multilayered film formed on the sample surface or a portion having different thickness partially or locally are/is detected, and further in a case where both shapes of a pattern formed on the sample surface (see
If the electron beam irradiates the sample surface a plurality of times, and if dust or particles on the sample are inspected, for example, the inspection is performed by irradiating the sample surface for the first time with the electron beam for which the effective landing energy LEeff is set to 10 eV to 30 eV, for example, so as to electrify slightly positively based on information obtained from the potential distribution of the sample surface, and next irradiating the sample surface with the electron beam for which the landing energy LE is set to 3.5 eV, for example, so that the luminance of dust or particles on the sample can be maximum. Then, dust or particles on the sample can be detected with high sensitivity.
In addition, when the sample surface pattern inspection is performed, if the sample surface is made of at last two types of materials, the inspection is performed in the following manner. The sample surface is irradiated for the first time with the electron beam for which the effective landing energy LEeff is set to 2 eV to 7 eV, for example, so that one of the materials becomes bright, namely to electrify to a slightly negative potential, based on information obtained from the “potential distribution of the sample surface” (see
The adjustment method of the potential distribution of the sample surface illustrated in
In the sample observation system illustrated in
The thermal electron emission type electron gun 3320 uses mainly LaB6, but it is possible to use a filament made of tungsten, or a cathode made of a tungsten-based compound such as Th—W or W2C, or made of oxide such as BaCO3, SrCO3, or CaCO3.
The primary electro-optical system 3300 is means for guiding the primary electron beam generated from the thermal electron emission type electron gun 3320 to the sample 200, and includes an E×B filter 3340, and a plurality of electrostatic lenses or electromagnetic lenses 3240. In the case of the SEM 3200 illustrated in
The secondary electro-optical system 3400 includes the detector 3100 for detecting the secondary electron beam coming back from the sample surface. As the detector 3100, a secondary electron multiplier tube is mainly used. The detector 3100 is connected to a control part 3160.
In
The sample observation systems of
As described above, the foreign matter adhesion prevention method and the electron beam inspection method of the present invention are described with reference to various embodiments. According to these foreign matter adhesion prevention method and the electro-optical inspection apparatus of the present invention, dust or particles such as particles coming toward the sample can be blocked by the dust collecting electrode disposed to surround the periphery of the sample. Therefore, it is possible to prevent the dust or particles such as particles from adhering to the sample surface. In addition, because adhesion of dust or particles such as particles to the sample surface can be prevented, it is possible to perform inspection of, in particular, an ultrafine pattern of 100 nm or smaller, a structural evaluation, an enlarged observation, a material evaluation, electrically conductive state, and the like of the sample surface with high accuracy and high efficiency.
In addition, according to the present invention, even if an insulation region and a conductive region are formed on the sample surface, a high contrast image of the sample surface can be obtained, and it is easy to classify a type of the defect (a short defect or an open defect). In addition, according to the present invention, static electricity due to charge-up on the sample surface can be removed efficiently. Therefore, blurring of a sample image due to the charge-up can be prevented. Thus, together with an effect of preventing adhesion of the dust or particles, it is possible to perform inspection with very high accuracy.
While the present invention has been described above in detail with reference to the exemplary embodiments, it is to be understood that the invention is not limited to the above-mentioned exemplary embodiments, and various modifications and replacement may be made thereto.
| Number | Date | Country | Kind |
|---|---|---|---|
| 174338/2010 | Aug 2010 | JP | national |
| 184629/2010 | Aug 2010 | JP | national |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 13195927 | Aug 2011 | US |
| Child | 14096361 | US |
