1. Field of the Invention
The present disclosure relates to scanning electron microscopes, automated electron beam (e-beam) inspection, review and metrology equipment, and the like.
2. Description of the Background Art
Inspection, review and metrology tools are used during the semiconductor manufacturing process to increase and maintain integrated circuit yields. Conventional inspection, review, and metrology tools are typically large apparatus which may weigh several hundred pounds or more. These tools are typically implemented to use an x-y stage in order to position a region of interest of the sample under the beam. In some implementations of inspection tools, time-delay-integration (TDI) detectors may be used so that the substrate may be continuously moved under the beam.
The conventional technique for positioning a region of interest has disadvantages relating to cost, complexity and reliability of the moving stage. In addition, the conventional technique may have a relatively slow throughput rate for scanning wafers due to the need to reposition (or continuously move) the wafer under the beam.
The large bulk of the conventional apparatus makes it costly to manufacture and also limits its practical applications. For example, the large bulk of the stage makes it difficult to integrate the inspector into another semiconductor equipment tool for in-situ metrology applications.
It is desirable to improve electron beam apparatus inspection equipment and techniques. It is particularly desirable to reduce the cost to manufacture e-beam apparatus and to increase the applicability and speed of such apparatus.
One embodiment relates to an apparatus which utilizes an electron beam for inspection or metrology of a substrate. The apparatus includes a CRT-type gun and deflectors to generate and scan the electron beam. The CRT-type gun may optionally be in a sealed vacuum.
Another embodiment relates to an apparatus including a vacuum chamber with a base plate, a support structure connected to the base plate, and a column with an electron source and a series of electron lenses. The column is mechanically supported by a top portion thereof connected to the support structure. The series of electron lenses may comprise metal plates mechanically supported by and separated by fused glass beads or other insulating material.
Another embodiment relates to a method of inspecting a substrate or measuring an aspect of the substrate. The method includes focusing an electron beam using electrostatic lenses formed by metal plates supported by and separated by fused glass beads or other insulating material.
Another embodiment relates to a method of manufacturing an electron beam column for an electron microscope. The method uses insulative material to separate a series of metal plates by fixed distances.
Another embodiment relates to a scanning electron microscope apparatus having a gun lens assembly, wherein the gun lens assembly comprises at least three separate metal plates forming the gun lens and at least two insulators fixing the positions of the metal plates with respect to each other, whereby each of the insulators is fixing the position of each of the metal plates.
Other embodiments and features are also disclosed.
These drawings are used to facilitate the explanation of embodiments of the present invention. The drawings are not necessarily to scale.
Electron Microscope Apparatus Using CRT-Type Optics
Traditional optical methods are available for macro wafer inspection, but these optical methods are not sensitive to electrical properties. Electron beam (e-beam) inspection tools are available, but these tools are currently too slow to be practical for wafer-level mapping on the order of several to tens of wafers per hour. Furthermore, vibrations in conventional e-beam inspection tools causes degradation of image resolution.
In one embodiment, a wafer handler 120 may retrieve the wafer from a processing chamber 122 and transport the wafer to the scanning apparatus 100. The wafer may be pre-aligned and loaded into the vacuum chamber 106 (shown pumped by the vacuum system 107) and positioned under the CRT-type gun 102 of the scanning apparatus. In an alternate embodiment, the scanning apparatus 100 may be integrated into a processing chamber such that a separate loading step is not required to scan the wafer.
In one embodiment, a gate valve 103 may also be used, as shown in
The e-beam may then be scanned in two dimensions over the entire wafer and a two-dimensional image constructed. For example, the two-dimensional scanning may use a raster scan pattern or other pattern. The scan pattern to be used may be programmed into a controller that controls the deflection of the beam from the CRT-type gun 102. The deflection may be performed by controlling electrical currents going through electromagnetic coils attached to the CRT-type gun 102.
In one particular application, the inspector may be configured to scan over an entire wafer 104 (for example, a 300 mm wafer) without using any physically moving parts. Such a scan is achievable without physically moving parts because no stage motion is needed during the scan. The beam from the CRT-type gun 102 is instead deflected by the electromagnetic deflection coils in a two-dimensional pattern, such as a raster pattern of a television. In other words, the stage holding the wafer may be stationary during the scanning of the wafer surface.
The signal may be taken from one (or more) of several mechanisms, including secondary electrons (SE), backscattered electrons (BSE), low-loss energy electrons, substrate current, and/or an x-ray signal. In one particular embodiment, a combination of secondary imaging and substrate imaging may provide detailed information in a novel way. In the embodiment illustrated in
The beam current for the system of
Resolution (dependent on spot size) for the system of
In an additional mode, the e-beam may have a larger spot size of about 10 millimeters, which is roughly equivalent to the size of a typical die. Depending on the beam current and averaging used, wafer scan times may range, for example, from less than a second to a few minutes.
In one embodiment, an adaptive procedure may be utilized, whereby areas of interest on the wafer are first quickly located with a very coarse beam. These smaller areas are then scanned at increasing resolutions until the desired detailed information on a particular area is obtained.
The resulting images may be post-processed to correct any minor wafer misalignment. The resulting aligned images can either be compared to known good images, or to a theoretical map. In addition, dies or regions on one wafer may be compared to other dies or regions on the same wafer.
A number of variations of the above-discussed macro e-beam inspector 100 may be implemented. For example, a grid (similar to a shadow mask in a CRT) may be placed just above the wafer to either enhance the resolution or to control the field above the wafer surface.
The above-described e-beam inspector 100 may also be extended to utilize multiple beams at low cost (due to the low cost of CRT gun technology). The use of multiple beams is advantageous in terms of increased throughput and also in maintaining a more consistent vertical landing angle across the entire wafer.
In one embodiment, the above-described e-beam inspector 100 may be advantageously integrated into another semiconductor manufacturing tool. Such integration would provide an in-situ metrology capability within the other tool. The other tool may comprise, for example, an etching type tool or a deposition type tool.
In accordance with the embodiment of
The apparatus 200 may be configured with an electrode 208 above the wafer 210. The electrode 208 may be configured as a plate with a slot 209 therein. The slot 209 is oriented along the scanning direction. The electrode 208 may be set at a voltage potential so as to facilitate extraction of secondary or other scattered electrons 213 from the wafer surface. The series of deflectors 206 is configured such that the extracted electrons 213 are deflected out of the path of the incident beam 205 and towards a detector 214.
The stage 212 holding the wafer 210 comprises a moving stage that translates the wafer 210 in the direction shown (to the right in the drawing). Thus, while the scanning of the wafer 210 is in the dimension in-and-out of the plane of the page, the translation of the wafer is in the horizontal direction of the figure.
In accordance with one embodiment, the electron gun 202 may comprise a CRT-type electron gun, as described herein. Moreover, to further increase the through-put of the apparatus when inspecting wafers, multiple CRT-type guns 202 and corresponding detectors 214 may be utilized. In that case, the column may be configured to deflect each electron beam so that it scans over a different segment of the wafer. In other words, the deflector system is configured to deflect each electron beam to scan across a different portion of a substrate being inspected
In accordance with the embodiment of
The apparatus 300 may also be configured with an electrode (not depicted) above the wafer 310. The electrode may be configured as a plate with a slot therein. The slot is oriented along the scanning direction. The electrode may be set at a voltage potential so as to facilitate extraction of secondary or other scattered electrons 313 from the wafer surface.
The stage 312 holding the wafer 310 comprises a moving stage that translates the wafer 310 in a direction perpendicular to the scanning direction. Thus, while the scanning of the wafer 310 is in the horizontal dimension of the figure, the translation of the wafer is in the direction in or out of the plane of the page.
In accordance with one embodiment, the electron gun 302 may comprise a CRT-type electron gun, as described herein. Moreover, to further increase the through-put of the apparatus when inspecting wafers, multiple CRT-type guns 302 and corresponding detectors 314 may be utilized. In that case, the column may be configured to deflect each electron beam so that it scans over a different segment of the wafer. In other words, the deflector system is configured to deflect each electron beam to scan across a different portion of a substrate being inspected
The incident electron beam is scanned along a swath 404. The length of the swath 404 is preferably just a fraction of the radius of the wafer. While the scanning is confined to a relatively small swath 404, the desired area of the wafer 402 is covered by simultaneous rotational 408 and translational 410 motion of the stage holding the wafer 402. The spot size for the incident beam may typically be 0.5 microns or larger.
In the example shown in
The apparatus 500 includes a main vacuum chamber. The main vacuum chamber may comprise a base plate 501 on top of which may be configured a bell jar 502. Various valves (not shown) may be included and used for vacuum pumping of the chamber, inserting a specimen into the vacuum chamber, and other functions.
A movable stage 504 is shown which holds a substrate specimen 506 being examined or processed. In one example, the substrate specimen 506 may comprise a semiconductor wafer being manufactured. A strong and light-weight support structure 508 may be configured within the main vacuum chamber. The support structure 508 is constructed out of a vacuum-compatible material such as titanium or aluminum. The support structure 508 includes openings 509 so that an ultra high vacuum (UHV) level may be maintained both inside and outside of the structure 508. An UHV level may be defined as pressure on the order of 10−9 Torr or less. A top view of an example support structure 508 is shown in
A CRT-type e-beam column 510 may be coupled to the support structure 508. The column 510 is configured similarly as a “neck” portion of a CRT tube. However, unlike a CRT tube for a television which is configured for magnification, the CRT-type e-beam column 510 is configured for de-magnification. This de-magnification may be achieved by applying appropriate voltages onto conductive plates within the column 510. An example of such a column 510 is shown in further detail in
Attached to the CRT-type column 510 may be controllable deflection coils 511. The controllable deflection coils 511 may be in the form of a deflection yoke and are preferably configured so as to be able to controllably deflect the electron beam from the CRT-type column 510 in a two-dimensional pattern over the surface of the substrate specimen 506.
Inside the support structure 508 may be configured a plate 512 which separates the UHV in which the column 510 is maintained from the high vacuum (HV) in which the substrate specimen 506 resides. A HV level may be defined as having pressure on the order of 10−6 Torr or less. An opening 513 in the plate allows the electron beam to travel from the column 510 to the substrate 506. The opening 513 further may function as a vacuum pumping differential aperture between the HV level for the substrate 506 and the UHV level for the column 510.
In accordance with this embodiment, an inner portion 514 of the plate 512 may comprise a permanent magnet made out of magnetic material and may be configured to function as an objective lens. This objective lens 514 may be configured to focus the electron beam from the column 510 onto the surface of the substrate 506.
Electrical leads 516 from the CRT-type column 510 may be coupled to a connector 517 to cabling 518 leading outside of the main vacuum chamber. Voltages may be applied to the electron source and conductive plates within the column 510 by way of this cabling 518. Advantageously, the CRT-type column 510 may be easily replaceable by removing an old column 510 and plugging in a new column 510.
An electron source 702 is configured at one end of the column 510. Preferably, the source 702 comprises a field emitter tip. The field emitter tip may comprise, for example, a thermal (Schottky) field emitter, a dispenser (i.e. a Barium-Tungsten matrix cathode), or a cold field emitter.
The column 510 comprises conductive plates 704 separated by insulative material 706. The insulative material 706 preferably comprises fused beaded glass. The column 510 manipulates the electron beam 703 using electrostatic electron optics by applying voltages to the conductive plates 704. The beam of electrons 703 from the source 702 is transmitted through holes (see
The CRT-type e-beam gun or column may be configured and manufactured in various ways other than the ways discussed above in relation to
There are various inventive aspects of embodiments of the invention. For example, one aspect relates to the use of a CRT-type column 510 for an automated e-beam inspection, review or metrology tool. In other words, the e-beam column of the automated tool comprises CRT-type components. In contrast, conventional e-beam columns for electron microscopes and automated e-beam inspection/review/metrology apparatus are made using bulky components, typically including gun lenses, condenser lenses, and the like.
Another aspect relates to manufacturing an electron microscope column using CRT-type manufacturing techniques. For example, the CRT-type column 510 for the electron microscope or automated e-beam inspection/review/metrology apparatus may be manufactured by techniques including fusing beaded glass and arc cutting. Stamped parts may be utilized, and the manufacturing process may involve statistical process control.
In another aspect, the CRT-type column may be easily replaceable by “plugging in” a new CRT-type column. This reduces cost and time required to maintain the apparatus.
In another aspect, the optics of the CRT-type column may comprise all electrostatic optics. In another aspect, the optics of the CRT-type column may comprise CRT-type electrostatic optics combined with a magnetic objective lens (see
Applications of the above-discussed high-speed e-beam inspection include, but are not limited to, determinations of contact or via etch uniformity, contact or via size, gate oxide leakage, gate oxide breakdown, junction leakage, field oxide quality or uniformity, interlayer dielectric (ILD) quality or uniformity, chemical mechanical planarization (CMP) thickness uniformity, and resist process uniformity. The high-speed inspection may also be applied to detection of large particles, or scratches, or missing patterns. More generally, the apparatus described above may be utilized for e-beam lithography, inspection, review or metrology. In another application, the CRT-type column may be utilized as an electron beam flood gun which may be used, for example, to pretreat photoresist.
In one possible embodiment, multiple CRT-type upper columns may be used in combination with a single electromagnetic objective lens. Another possible embodiment relates to parallel imaging using multiple miniature columns made using CRT-type optics.
Portable SEM
The large bulk of a conventional scanning electron microscope (SEM) makes it costly to manufacture and also limits its practical applications. In order to examine an object of interest by a conventional SEM, the object must typically be sampled, and the sample prepared so as to be suitable for placing into the SEM sample holder. The SEM is typically stationary in a laboratory setting.
The present disclosure provides a new and inventive design for a portable SEM. The portable SEM may be readily transported by a single person to the location of the object of interest. In one embodiment, a sample of the object of interest may be inserted into a rapid access specimen holder of the portable SEM. In another embodiment, the portable SEM may be placed in direct contact with a bulk object of interest using an environmental interface, such that no sampling may be required to examine the object surface.
The system includes a portable laptop or other portable computer 902 to display and store the images from the SEM and to control the SEM. The computer 902 includes, among other components, a central processing unit (within its case) 904, a user input device (such as a keyboard and mouse or other pointing device) 906, and a display (such as an LCD display panel) 908.
In accordance with this embodiment, the computer 902 also includes a universal serial bus (USB) interface or other data interface 910. This data interface 910 is connected to a corresponding data interface 911 for the portable SEM via a USB cable or other appropriate data cable 912. In
The pump unit 914 may comprise, for example, a single stage membrane type pump which is portable and is configured to serve as a vacuum pump for the portable SEM 920. The pump unit 914 may be powered, for example, by 110 volt AC power from a wall outlet. Alternatively, for further portability, the pum unit 914 may be battery powered. A power/data/vacuum cable 918 may connect from the pump unit 914 to the portable SEM device 920. The cable 918 provides power and control signals to the portable SEM device 920. The cable 918 also provides the vacuum suction from the pump unit 914 to the portable SEM device 920. Data, including electron image frames, may be output from the portable SEM device 920 via the data cable 912 to the laptop computer 902.
The system includes a portable laptop or other portable computer 902 to display and store the images from the SEM and to control the SEM. The computer 902 includes, among other components, a central processing unit (within its case) 904, a user input device (such as a keyboard and mouse or other pointing device) 906, and a display (such as an LCD display panel) 908.
In accordance with this embodiment, the computer 902 also includes a wireless receiver/transmitter (RX/TX) 952, such as one compatible with the 802.11 standards or a Bluetooth standard. This wireless RX/TX 952 communicates via a wireless link with a corresponding wireless RX/TX 955 for the portable SEM. In
The pump unit 914 may comprise, for example, a single stage membrane type pump which is portable and is configured to serve as a vacuum pump for the portable SEM 920. The pump unit 914 may be powered, for example, by 110 volt AC power from a wall outlet. Alternatively, for further portability, the pum unit 914 may be battery powered. A power/data/vacuum cable 918 may connect from the pump unit 914 to the portable SEM device 920. The cable 918 provides power and control signals to the portable SEM device 920. The cable 918 also provides the vacuum suction from the pump unit 914 to the portable SEM device 920. Data, including electron image frames, may be output from the portable SEM device 920 via the wireless link to the laptop computer 902.
The portable SEM device 920 may be enclosed with a steel or similar case 1001 to reduce radiation which may be generated by the electron beam. A CRT-type gun 1002 may be utilized to generate the electron beam. As discussed in detail above, the CRT-type gun 1002 may be constructed using multiple metal plates separated by insulative material. Advantageously, the CRT-type gun 1002 is much smaller and lighter in weight than an electron beam gun and column used in conventional SEM devices.
In one implementation, the CRT-type gun 1002 may be evacuated and maintained in high vacuum (in a range of about 10−5 to 10−8 Torr) by the pump provided by the power/data/vacuum cable 918. In an alternate implementation, the CRT-type gun 1002 may be in a sealed vacuum. In that case, the beam may be transmitted through an electron beam transparent window from the CRT-type gun 1002 to the main chamber 1005 of the portable SEM device 920. For example, the window may be made out of diamond or another electron-beam-transparent material. The window serves to maintain the sealed vacuum while allow transmission of the electron beam. In addition, a getter material may be included within the sealed vacuum of the CRT-type gun 1002 so as to facilitate its operation in vacuum.
Deflectors (which may be in the form of an electromagnetic deflection yoke) 1003 may be attached to or configured in the vicinity of the CRT-type gun 1002. These deflectors 1003 may be utilized to controllably scan the electron beam across a two-dimensional area of the sample being examined.
The scanned beam is transmitted through the chamber 1005 of the portable SEM device 920. The chamber 1005 may be evacuated and held in vacuum by the vacuum pump provided by the power/data/vacuum cable 918. The level of vacuum in the chamber 1005 may be an “environmental” vacuum level in a range of about 10−4 to 10−1 Torr.
In this embodiment, the specimen being scanned may be held on a specimen stage 1008 of a rapid access specimen holder 1006. The holder 1006 may be rapidly removed from and rapidly attached to the chamber 1005. For example, a screw, clamp, or other mechanical interface 1007 may be utilized for the attachment/removal of the holder 1006 to/from the chamber 1005. When the holder 1006 is attached to the chamber 1005, the volume of the holder 1006 is also evacuated and held in vacuum.
Backscattered and/or secondary electrons are caused by impingement of the scanned electron beam onto the specimen surface. The backscattered and/or secondary electrons may be detected using an electron detector 1010 configured within the chamber 1005. The detected signals may be processed by circuitry and transmitted back to the laptop via the power/data/vacuum cable 918. Alternatively, or in addition, an x-ray detector may be included for x-ray analysis of the material being scanned.
For purposes of safety and longevity of operation, a vacuum detector 1012 may be included in the chamber 1005. If no or insufficient vacuum is detected, then a safety switch 1014 may cut off power to the CRT-type gun 1002.
The portable SEM device 920 may be enclosed with a steel or similar case 1001 to reduce radiation which may be generated by the electron beam. A CRT-type gun 1002 may be utilized to generate the electron beam. As discussed in detail above, the CRT-type gun 1002 may be constructed using multiple metal plates separated by insulative material. Advantageously, the CRT-type gun 1002 is much smaller and lighter in weight than an electron beam gun and column used in conventional SEM devices.
In one implementation, the CRT-type gun 1002 may be evacuated and maintained in a high vacuum (in a range of about 10−5 to 10−8 Torr) by the pump provided by the power/data/vacuum cable 918. In an alternate implementation, the CRT-type gun 1002 may be in a sealed vacuum. In that case, the beam may be transmitted through an electron beam transparent window from the CRT-type gun 1002 to the main chamber 1005 of the portable SEM device 920. For example, the window may be made out of diamond or another electron-beam-transparent material. The window serves to maintain the sealed vacuum while allow transmission of the electron beam. In addition, a getter material may be included within the sealed vacuum of the CRT-type gun 1002 so as to facilitate its operation in vacuum.
Deflectors (which may be in the form of an electromagnetic deflection yoke) 1003 may be attached to or configured in the vicinity of the CRT-type gun 1002. These deflectors 1003 may be utilized to controllably scan the electron beam across a two-dimensional area of the sample being examined.
The scanned beam is transmitted through the chamber 1005 of the portable SEM device 920. The chamber 1005 may be evacuated and held in vacuum by the vacuum pump provided by the power/data/vacuum cable 918. The level of vacuum in the chamber 1005 may be an “environmental” vacuum level in a range of about 10−4 to 10−1 Torr.
In accordance with this embodiment, the specimen being scanned may be a bulk specimen 1052. For example, the bulk specimen 1052 may comprise a wing or other part of an aircraft being inspected for mechanical defects. Advantageously, the portable SEM device 920 may be brought to the location of the bulk specimen.
As shown in
Backscattered and/or secondary electrons are caused by impingement of the scanned electron beam onto the specimen surface 1054. The backscattered and/or secondary electrons may be detected using an electron detector 1010 configured within the chamber 1005. The detected signals may be processed by circuitry and transmitted back to the laptop via the power/data/vacuum cable 918. Alternatively, or in addition, an x-ray detector may be included for x-ray analysis of the material being scanned.
For purposes of safety and longevity of operation, a vacuum detector 1012 may be included in the chamber 1005. If no or insufficient vacuum is detected, then a safety switch 1014 may cut off power to the CRT-type gun 1002.
In the above description, numerous specific details are given to provide a thorough understanding of embodiments of the invention. However, the above description of illustrated embodiments of the invention is not intended to be exhaustive or to limit the invention to the precise forms disclosed. One skilled in the relevant art will recognize that the invention can be practiced without one or more of the specific details, or with other methods, components, etc. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring aspects of the invention. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize.
These modifications can be made to the invention in light of the above detailed description. The terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification and the claims. Rather, the scope of the invention is to be determined by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.
The present application claims the benefit of U.S. Provisional Patent Application No. 60/772,447, entitled “Electron Microscope Apparatus Using CRT-Type Optics,” filed Feb. 10, 2006, by inventors Avi Cohen, David L. Adler and Neil Richardson, the disclosure of which is hereby incorporated by reference. The present application also claims the benefit of U.S. Provisional Patent Application No. 60/749,868, entitled “Electron Microscope Apparatus Using CRT-Like Optics,” filed Dec. 12, 2005, by inventors Avi Cohen, David L. Adler and Neil Richardson, the disclosure of which is hereby incorporated by reference. The present application is related to U.S. patent application Ser. No. 11/031,091, entitled “High-Speed Electron Beam Inspection,” filed Jan. 6, 2005, by inventors David L. Adler, et al., the disclosure of which is also hereby incorporated by reference.
Number | Date | Country | |
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60772447 | Feb 2006 | US | |
60749868 | Dec 2005 | US |