Claims
- 1. A metal foil cover for a semiconductor device, consisting essentially of:
- (a) a metal foil having two faces, and
- (b) an adhesive layer on one face of said metal foil which is temporarily fixable on a surface of a cavity of a mold
- wherein the contact angle of the face of the metal foil upon -contact with an encapsulating resin during molding, to water is 110.degree. or less.
- 2. A metal foil cover as claimed in claim 1, wherein the metal foil material has a tensile strength at room temperature of from 5 to 20 kgf/mm.sup.2, and an elongation at room temperature of 20% or more.
- 3. A metal foil cover as claimed in claim 1, wherein the adhesive layer contains an inorganic filler in an amount of 3 to 40 parts by weight per 100 parts by weight of the adhesive.
- 4. A metal foil cover as claimed in claim 3, wherein the inorganic filler has an average particle size of from 0.05 to 0.8 times the thickness of the adhesive layer.
- 5. A metal foil cover as claimed in claim 4, wherein the inorganic filler has the maximum particle size of from 1.5 to 3 times the thickness of the adhesive layer.
- 6. A metal foil cover as claimed in claim 3, wherein the inorganic filler is silica.
- 7. A metal foil cover as claimed in claim 1, wherein the adhesive layer comprises a thermosetting resin and an inorganic filler.
- 8. A metal foil cover as claimed in any of claims 1-2, wherein the adhesive layer has a tensile adhesion strength to the mold cavity face at 175.degree. C. of from 0.3 to 5.0 kgf/cm.sup.2.
- 9. An encapsulated semiconductor device comprising:
- (i) a semiconductor device having a surface;
- (ii) the metal foil cover of claim 1 comprising the metal foil material (a) and the adhesive layer (b), wherein the adhesive layer has a thickness of 5 to 20 .mu.m and wherein the adhesive layer contains an inorganic filler in an amount of 3 to 40 parts by weight per 100 parts by weight of the adhesive: and,
- (iii) an encapsulating resin,
- wherein the metal foil material is adhered on the semiconductor device surface such that the metal foil material is embedded in the encapsulating resin in a depth corresponding to the thickness of the adhesive layer from a face formed from the encapsulating resin and the adhesive layer.
- 10. A semiconductor device as claimed in claim 9, wherein individual identification information is recorded on the adhesive layer of the metal foil material.
- 11. A metal foil according to claim 1, wherein the adhesive layer has a thickness of 5 to 20 .mu.m.
- 12. A metal foil cover as claimed in claim 1, wherein the adhesive layer is a flexible adhesive layer.
- 13. A metal foil cover according to claim 1, wherein the face of the metal foil upon contact with an encapsulating resin during molding, to water, has a contact angle measurement of 25.degree. to 100.degree..
Priority Claims (2)
Number |
Date |
Country |
Kind |
6-159796 |
Jul 1994 |
JPX |
|
7-033677 |
Feb 1995 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/501,142 filed Jul. 11, 1995 now abandoned.
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Date |
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4177480 |
Hintzmann et al. |
Dec 1979 |
|
4953002 |
Nelson et al. |
Aug 1990 |
|
5317195 |
Ishikawa et al. |
May 1994 |
|
5406117 |
Dlugokecki et al. |
Apr 1995 |
|
Foreign Referenced Citations (3)
Number |
Date |
Country |
0144984 |
Jun 1983 |
JPX |
0158648 |
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JPX |
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JPX |
Continuations (1)
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Number |
Date |
Country |
Parent |
501142 |
Jul 1995 |
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