Patent Application
20220189777
The present disclosure relates to a film formation method and a film formation apparatus.
Patent Document 1 discloses a technique of depositing a metal material on a first surface of a substrate and an insulating material on a second surface of the substrate. The first surface is a surface of a metal or a semiconductor, and the second surface has OH groups or the like. As a specific example, a technique of forming a Ru film on the first surface using the fact that Ru(EtCp)2 does not react with Si—OH is disclosed.
Patent Document 1: U.S. Patent Application Publication No. 2015/0299848
An aspect of the present disclosure provides a technique capable of removing a product produced in a second region and leaving a target film in the first region when a desired target film is selectively formed in the first region.
A film formation method of an aspect of the present disclosure includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming a target film selectively in the first region among the first region and the second region; and removing a product produced in the second region in the forming the target film by supplying ClF3 gas to the substrate.
According to an aspect of the present disclosure, when a target film is formed selectively in a first region, it is possible to remove the product produced in the second region and to leave the target film in the first region.
Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding components may be denoted by the same reference numerals, and a description thereof may be omitted.
The film formation method includes step S101 of providing a substrate 10, as illustrated in
Although only the first regions A1 and the second regions A2 are present in
The first material is, for example, a conductive material. The conductive material is Ru in this embodiment, but may be RuO2, Pt, Pd, or Cu. A Ru film 20 as a target film is formed on the surface of these conductive materials in step S102 to be described later. The Ru film 20 is a conductive film.
The second material is, for example, an insulating material having OH groups. The insulating material is a low dielectric constant material (a low-k material) having a dielectric constant lower than that of SiO2 in this embodiment, but is not limited to the low-k material. Since the OH groups are generally present on the surface of the insulating material, it is possible to suppress formation of the Ru film 20 in step S102 to be described later. It is also possible to increase the number of OH groups by treating the surface of the insulating material with ozone (O3) gas before forming the Ru film 20.
The substrate 10 has, for example, a conductive film 11 formed of the above-mentioned conductive material and an insulating film 12 formed of the above-mentioned insulating material. In the substrate 10, for example, the conductive film 11 is formed in a trench in the insulating film 12, and the conductive film 11 and the insulating film 12 are flattened through polishing. The polishing is, for example, chemical mechanical polishing (CMP).
Although the surface of the conductive film 11 and the surface of the insulating film 12 are flush with each other in
In addition, the substrate 10 has a base substrate 14 on which the conductive film 11 and the insulating film 12 are formed. The base substrate 14 is a semiconductor substrate such as a silicon wafer. In addition, the base substrate 14 may be, for example, a glass substrate. In addition, the substrate 10 may further include, between the base substrate 14 and the insulating film 12, a base film formed of a material different from those of the base substrate 14 and the insulating film 12.
The film formation method includes step S102 of forming a desired target film selectively in the first regions A1 among the first regions A1 and the second regions A2 as illustrated in
The Ru film 20 is formed through a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. In the CVD method, Ru(EtCp)2 gas and O2 gas are simultaneously supplied to the substrate 10. In the ALD method, Ru(EtCp)2 gas and O2 gas are alternately supplied to the substrate 10.
The supply of Ru(EtCp)2 gas (step S201) includes heating a raw material container containing liquid Ru(EtCp)2 to 60 to 100 degrees C. and supplying vaporized Ru(EtCp)2 gas from the raw material container together with a carrier gas to the processing container 120. In addition to the Ru(EtCp)2 gas and the carrier gas, a diluting gas for diluting the Ru(EtCp)2 gas may also be supplied into the processing container 120. As the carrier gas and the diluting gas, an inert gas, such as argon (Ar) gas, is used. The supply of the Ru(EtCp)2 gas (step S201) may further include exhausting the interior of the processing container 120 using a vacuum pump in order to suppress a pressure change inside the processing container 120.
The discharge of the Ru(EtCp)2 gas (step S202) includes exhausting the interior of the processing container 120 using the vacuum pump in the state in which the supply of the Ru(EtCp)2 gas into the processing container 120 is stopped. The discharge of the Ru(EtCp)2 gas (step S202) may further include supplying a purge gas into the processing container 120 in order to suppress a pressure change inside the processing container 120. As the purge gas, an inert gas such as argon gas is used.
The supply of the O2 gas (step S203) includes supplying O2 gas into the processing container 120. In addition to the O2 gas, a diluting gas for diluting the O2 gas may also be supplied into the processing container 120. As the diluting gas, an inert gas such as argon (Ar) gas is used. The supply of the O2 gas (step S203) may further include exhausting the interior of the processing container 120 using the vacuum pump in order to suppress a pressure change inside the processing container 120.
Similar to the discharge of the Ru(EtCp)2 gas (step S202), the discharge of the O2 gas (step S204) includes exhausting the interior of the processing container 120 using the vacuum pump in the state in which the supply of the O2 gas into the processing container 120 is stopped. In addition, the discharge of the O2 gas (step S204) may further include supplying a purge gas into the processing container 120 in order to suppress a pressure change inside the processing container 120. As the purge gas, an inert gas such as argon gas is used.
In the supply of the Ru(EtCp)2 gas (step S201), the discharge of the Ru(EtCp)2 gas (step S202), the supply of the O2 gas (step S203), and the discharge of the O2 gas (step S204), the total flow rate of the gases supplied into the processing container 120 may be the same. This makes it possible to further suppress a pressure change inside the processing container 120.
For the formation of the Ru film 20 (step S102), the above steps S201 to S204 are set as one cycle, and the cycle is repeatedly performed. The formation of the Ru film 20 includes step S205 of checking whether or not the number of cycles has reached the target number of times N1. The target number of times N1 is set in advance through an experiment or the like such that the thickness of the Ru film 20 reaches a target film thickness when the number of cycles reaches the target number of times N1.
When the number of cycles is less than the target number of times N1, since the thickness of the Ru film 20 has not reached the target film thickness, the above steps S201 to S204 are performed again. Meanwhile, when the number of cycles is the target number of times N1,since the film thickness of the Ru film 20 has reached the target film thickness, the current process is terminated.
Meanwhile, the Ru(EtCp)2 gas is not adsorbed onto the surface on which OH groups are present, but is adsorbed onto the surface on which OH groups are not present. As illustrated in
The Ru(EtCp)2 gas basically is not adsorbed on the second regions A2. However, when defects are present in the second regions A2, the Ru(EtCp)2 gas is adsorbed on the defects. The defects may include metal or damage remaining after polishing such as CMP. Since the Ru(EtCp)2 gas is adsorbed on the defects in the second regions A2, a product 21 is also formed in an island shape in the second regions A2 as illustrated in
Therefore, the film formation method includes step S103 of removing the product 21 produced in the second regions A2 during the formation of the Ru film 20, as illustrated in
The ClF3 gas etches the product 21 from the surface thereof. At this time, the ClF3 gas also etches the Ru film 20 from the surfaces thereof, but the volume change of the Ru film 20 is slower than the volume change of the product 21. This is because the specific surface area (the surface area per unit volume) of the Ru film 20 is smaller than the specific surface area of the product 21.
Compared with the O3 gas, the ClF3 gas is able to evenly etch the entire surface of Ru and suppress the acceleration of local etching. Therefore, the product 21 and the Ru film 20 can be etched at volume change rates according to the specific surface areas thereof, respectively. Therefore, the ClF3 gas is able to remove the product 21 produced in the second regions A2 and leave the Ru film 20 in the first regions A1.
The ClF3 gas removes the product 21 by chemically reacting with the product 21. The ClF3 gas may be heated to a high temperature to promote the chemical reaction with the product 21. Further, the ClF3 gas may be plasmatized in order to promote the chemical reaction with the product 21, but is not plasmatized in this embodiment. In this embodiment, from the viewpoint of reducing damage to the Ru film 20, the ClF3 gas is thermally excited, rather than being plasma-excited. The thermal excitation generates Cl radicals, F radicals, or the like, and these radicals chemically react with the product 21. The removal of the product 21 is performed inside the processing container 120 (see
The supply of the ClF3 gas (step S301) includes supplying ClF3 gas into the processing container 120. In addition to the ClF3 gas, a diluting gas for diluting the ClF3 gas may also be supplied into the processing container 120. As the diluting gas, an inert gas such as argon (Ar) gas is used. The partial pressure of the ClF3 gas inside the processing container 120 is, for example, 67 Pa or higher and 667 Pa or lower (0.5 Torr or higher and 5 Torr or lower). The supply of the ClF3 gas (step S301) may further include exhausting the interior of the processing container 120 using the vacuum pump in order to suppress a pressure change inside the processing container 120.
The discharge of the ClF3 gas (step S302) includes exhausting the interior of the processing container 120 using the vacuum pump in the state in which the supply of the ClF3 gas into the processing container 120 is stopped. The discharge of the ClF3 gas (step S302) may further include supplying a purge gas into the processing container 120 in order to suppress a pressure change inside the processing container 120. As the purge gas, an inert gas such as argon gas is used.
The total flow rate of the gases supplied to the inside of the processing container 120 may be the same in the supply of the ClF3 gas (step S301) and the discharge of the ClF3 gas (step S302). This makes it possible to further suppress a pressure change inside the processing container 120.
For the removal of the product 21 (step S103), the above-mentioned steps S301 to S302 are set as one cycle, and the cycle is repeatedly performed. During one cycle, the ClF3 gas supply time T1 is, for example, 1 second or more and 20 seconds or less, and the ClF3 gas discharge time T2 is, for example, 1 second or more and 20 seconds or less. The one-cycle time T (T=T1+T2) is, for example, 5 seconds or more and 40 seconds or less, and the ratio of the ClF3 gas supply time T1 to the one-cycle time T, (T1/T), is, for example, 0.3 or more and 0.7 or less.
The removal of the product 21 (step S103) includes a step S303 of checking whether or not the number of cycles has reached the target number of times N2. The target number of times N2 is set in advance through an experiment or the like such that the product 21 is removed when the number of cycles reaches the target number of times N2. The target number of times N2 is determined based on the target film thickness of the Ru film 20 (that is, the target number of times N1 in
When the number of cycles is less than the target number of times N2, since a part of the product 21 remains, the above-mentioned steps S301 to S302 are performed again. Meanwhile, when the number of cycles is the target number of times N1, since the product 21 has already been removed, the current process is terminated.
The removal of the product 21 (step S103) includes alternately and repeatedly performing the supply of the ClF3 gas (step S301) and the discharge of the ClF3 gas (step S302), as illustrated in
As illustrated in
By separately performing the formation of the Ru film 20 a plurality of times, the size of the product 21 deposited each time may be reduced. As the size of the product 21 becomes smaller, the specific surface area of the product 21 becomes smaller, which makes it possible to shorten the time required for removing the product 21. Thus, it is possible to reduce the damage to the Ru film 20 that may occur when the product 21 is removed.
The film formation method includes step S101 of providing a substrate 10, as illustrated in
The first material is, for example, a semiconductor, and more specifically, amorphous silicon (a-Si). The a-Si may or may not contain a dopant. Polycrystalline silicon or the like may be used instead of the amorphous silicon. In addition, a metal may be used as the first material. Since no OH group is present on the surface of these materials, the formation of a self-assembled monolayer (SAM) 30 can be suppressed in step S112 to be described later.
The second material is, for example, an insulating material having OH groups. The insulating material is silicon oxide in this embodiment, but is not limited to silicon oxide. Since OH groups are generally present on the surface of an insulating material, the SAM 30 is formed in step S112 to be described later. It is also possible to increase the number of OH groups by treating the surface of the insulating material with ozone (O3) gas before forming the SAM 30.
The substrate 10 has, for example, a semiconductor film 13 formed of the above-mentioned semiconductor and an insulating film 12 formed of the above-mentioned insulating material. A metal film may be formed instead of the semiconductor film 13. On the surface of the semiconductor film 13 (or the metal film), an oxide film is naturally formed over time in the atmosphere. In that case, the oxide film is removed before the formation of the SAM 30 (step S112) to be described later.
In addition, the substrate 10 has a base substrate 14 on which the semiconductor film 13 and the insulating film 12 are formed. The base substrate 14 is a semiconductor substrate such as a silicon wafer. In addition, the base substrate 14 may be, for example, a glass substrate.
In addition, the substrate 10 may further include, between the base substrate 14 and the semiconductor film 13, a base film formed of a material different from those of the base substrate 14 and the semiconductor film 13. Similarly, the substrate 10 may further include, between the base substrate 14 and the insulating film 12, a base film formed of a material different from those of the base substrate 14 and the insulating film 12.
The film formation method includes step S111 of performing hydrogen termination treatment to the first material as illustrated in
The hydrogen termination treatment is performed, for example, by supplying hydrogen (H2) gas to the substrate 10. The hydrogen termination treatment may also serve as treatment for reducing and removing an oxide film produced by the surface oxidation of the semiconductor film 13 (or a metal film). The hydrogen gas may be heated to a high temperature in order to promote the chemical reaction. In addition, the hydrogen gas may be plasmatized in order to promote the chemical reaction. The hydrogen termination treatment is dry treatment in this embodiment, but may be wet treatment. For example, the hydrogen termination treatment may be performed by immersing the substrate 10 in a dilute hydrofluoric acid.
The film formation method includes step S112 of forming an SAM 30 selectively in the second regions A2 among the first regions A1 and the second regions A2, as illustrated in
The silane compound is, for example, a compound represented by a general formula R—SiH3-xClx (x=1, 2, 3) or a compound represented by R′—Si (O—R)3 (a silane coupling agent). Here, R and R′ are functional groups such as an alkyl group or a group obtained by substituting at least a part of hydrogen of the alkyl group with fluorine. The terminal groups of the functional groups may be either CH-based or CF-based. In addition, O—R is a hydrolyzable functional group such as a methoxy group or an ethoxy group.
The silane compound, which is a material of the SAM30, is chemisorbed onto the surface having OH groups. Thus, the silane compound is selectively chemisorbed onto the second regions A2 among the first regions A1 and the second regions A2. Therefore, the SAM 30 is formed selectively in the second regions A2. The silane compound is not chemisorbed onto the surface subjected to hydrogen termination treatment. Thus, the silane compound is selectively chemisorbed by the second regions A2 among the first regions A1 and the second regions A2. Therefore, the SAM 30 is selectively formed by the second regions A2.
As illustrated in
The conductive film 40 is formed through, for example, a CVD method or an ALD method. The conductive film 40 may be laminated on the semiconductor film 13, which is originally present in the first regions A1. The semiconductor film 13 may contain a dopant and may be given conductivity. The conductive film 40 may be laminated on the conductive semiconductor film 13. The material of the conductive film 40 is not particularly limited, but is, for example, a titanium nitride. Hereinafter, the titanium nitride is also referred to as “TiN” regardless of the composition ratio of nitrogen and titanium.
When a TiN film is formed as the conductive film 40 through the ALD method, a Ti-containing gas, such as tetrakisdimethylaminotitanium (TDMA: Ti[N(CH3)2]4) gas or titanium tetrachloride (TiCl4) gas, and a nitriding gas such as ammonia (NH3) gas, are alternately supplied to the substrate 10. In addition to the Ti-containing gas and the nitriding gas, a reforming gas such as hydrogen (H2) gas may be supplied to the substrate 10. These processing gases may be plasmatized to facilitate the chemical reaction. These processing gases may be heated to facilitate the chemical reaction.
Since the SAM 30 inhibits the formation of the conductive film 40, the conductive film 40 is selectively formed in the first regions A1 among the first regions A1 and the second regions A2. However, since the gas that is the material of the conductive film 40 is slightly adsorbed onto the SAM 30, a product 41 is also deposited in the second regions A2 in an island shape, as illustrated in
Therefore, the film formation method includes step S103 of removing the product 41 produced in the second regions A2 during the formation of the conductive film 40, as illustrated in
In addition, the ClF3 gas can not only remove the product 41, but also thin or remove the SAM 30. Lift-off of product 41 can be performed by thinning or removing the SAM 30.
TiN is more easily etched by ClF3 gas than Ru. In order to suppress the local acceleration of etching, the removal of the product 41 may be performed under different conditions from the removal of the product 21. Specifically, in order to make the etching of the TiN gentle, the temperature of the substrate 10 is low, the partial pressure of the ClF3 gas is low, and the ratio of the ClF3 gas supply time T1 to the one-cycle time T (T=T1+T2), (T1/T), is small.
For example, in the supply of the ClF3 gas (step S301) and the discharge of the ClF3 gas (step S302), the temperature of the substrate 10 is, for example, 70 degrees C. or higher and 150 degrees C. or lower. In addition, in the supply of the ClF3 gas (step S301), the partial pressure of the ClF3 gas inside the processing container 120 is, for example, 1.3 Pa or higher and 27 Pa or lower (0.01 Torr or higher and 0.2 Torr or lower). During one cycle, the ClF3 gas supply time T1 is, for example, 1 second or more and 5 seconds or less, and the ClF3 gas discharge time T2 is, for example, 3 second or more and 20 seconds or less. The one-cycle time T (T=T1+T2) is, for example, 4 seconds or more and 25 seconds or less, and the ratio of the ClF3 gas supply time T1 to the one-cycle time T, (T1/T), is, for example, 0.1 or more and 0.5 or less.
The removal of the product 41 (step S103) includes alternately and repeatedly performing the supply of the ClF3 gas (step S301) and the discharge of the ClF3 gas (step S302), as illustrated in
As illustrated in
By separately performing the formation of the Ru film 40 a plurality of times, the size of the product 41 deposited each time may be reduced. As the size of the product 41 becomes smaller, the specific surface area of the product 41 becomes smaller, which makes it possible to shorten the time required for removing the product 41. Thus, it is possible to reduce the damage to the conductive film 40 that may occur when the product 41 is removed.
Although only one processing unit 110 is illustrated in
The processing container 120 has a carry-in/out port 122 through which the substrate 10 passes. The carry-in/out port 122 is provided with a gate G that opens/closes the carry-in/out port 122. The gate G basically closes the carry-in/out port 122, and opens the carry-in/out port 122 when the substrate 10 passes through the carry-in/out port 122. When the carry-in/out port 122 is opened, the processing chamber 121 inside the processing container 120 and the vacuum transfer chamber 101 communicate with each other. Before opening the carry-in/out port 122, both the processing chamber 121 and the vacuum transfer chamber 101 are exhausted by a vacuum pump or the like and maintained at a preset pressure.
The substrate holder 130 holds the substrate 10 inside the processing container 120. The substrate holder 130 holds the substrate 10 horizontally from below with the surface of the substrate 10 exposed to the processing gas facing upwards. The substrate holder 130 is a single-wafer type and holds one substrate 10. The substrate holder 130 may be a batch type, or may hold a plurality of substrates 10 at the same time. The batch-type substrate holder 130 may hold a plurality of substrates 10 at intervals in the vertical direction or at intervals in the horizontal direction.
The heater 140 heats the substrate 10 held by the substrate holder 130. The heater 140 is, for example, an electric heater, and generates heat when electric power is supplied thereto. The heater 140 is embedded in, for example, the substrate holder 130 and heats the substrate holder 130 to heat the substrate 10 to a desired temperature. The heater 140 may include a lamp configured to heat the substrate holder 130 through a quartz window. In this case, an inert gas such as argon gas may be supplied to a space between the substrate holder 130 and the quartz window in order to prevent the quartz window from becoming opaque due to deposits. In addition, the heater 140 may heat the substrate 10 disposed inside the processing container 120 from the outside of the processing container 120.
The processing unit 110 may further include a cooler configured to cool the substrate 10 in addition to the heater 140 configured to heat the substrate 10. Not only can the temperature of the substrate 10 be raised at high speed, but the temperature of the substrate 10 can be lowered at high speed. Meanwhile, when the processing of the substrate 10 is performed at room temperature, the processing unit 110 does not have to include the heater 140 and the cooler.
The gas supplier 150 supplies preset processing gases to the substrate 10. The processing gases are prepared for, for example, respective steps S102 and S103 (or steps S111, S112, S102, and S103). These steps may be performed inside different processing containers 120, respectively, or two or more of any combinations may be performed continuously inside the same processing container 120. In the latter case, the gas supplier 150 supplies a plurality of types of processing gases to the substrate 10 in a preset order according to the order of the steps.
The gas supplier 150 is connected to the processing container 120 via, for example, a gas supply pipe 151. The gas supplier 150 includes processing gas supply sources, individual pipes individually extending from respective supply sources to the gas supply pipe 151, an opening/closing valve provided in the middle of each of the individual pipes, and a flow rate controller provided in the middle of each of the individual pipes. When the opening/closing valve opens the individual pipe, the processing gas is supplied from the supply source thereof to the gas supply pipe 151. The supply amount of the processing gas is controlled by the flow rate controller. Meanwhile, when the opening/closing valve closes the individual pipe, the supply of the processing gas from the supply source thereof to the gas supply pipe 151 is stopped.
The gas supply pipe 151 supplies the processing gas supplied from the gas supplier 150 to the interior of the processing container 120, for example, the shower head 152. The shower head 152 is provided above the substrate holder 130. The shower head 152 has a space 153 therein, and ejects the processing gas stored in the space 153 vertically downwards from a large number of gas ejection holes 154. A shower-like processing gas is supplied to the substrate 10.
The gas discharger 160 discharges gas from the interior of the processing container 120. The gas discharger 160 is connected to the processing container 120 via an exhaust pipe 161. The gas discharger 160 includes an exhaust source such as a vacuum pump, and a pressure controller. When the exhaust source is operated, gas is discharged from the interior of the processing container 120. The pressure inside the processing container 120 is controlled by a pressure controller.
The controller 180 is constituted with, for example, a computer, and includes a central processing unit (CPU) 181 and a storage medium 182 such as a memory. The storage medium 182 stores a program for controlling various processes executed in the film formation apparatus 100. The controller 180 controls the operation of the film formation apparatus 100 by causing the CPU 181 to execute the program stored in the storage medium 182. The controller 180 includes an input interface 183 and an output interface 184. The controller 180 receives a signal from the outside using the input interface 183 and transmits a signal to the outside using the output interface 184.
The controller 180 controls the heater 140, the gas supplier 150, the gas discharger 160, and the transfer apparatus 170 so as to perform the film formation method illustrated in
In Example 1, the substrate 10 illustrated in
Next, the formation of the Ru film 20 (step S102) was performed through the ALD method illustrated in
Next, the removal of the product 21 (step S103) was performed through the method illustrated in
In Reference Examples 1 to 4, substrates in each of which a Ru film 20 having a film thickness of 24.8 nm was formed on the entire surface of a single crystal silicon substrate as the base substrate 14 using a CVD method were prepared, and the Ru films were etched using ClF3 gas under the same conditions, except for the conditions shown in Table 1. Table 1 shows the etching conditions, the film thicknesses of the Ru films 20 after etching, and the etching rates of the Ru films 20 collectively.
As is clear from Table 1, it can be seen that the higher the temperature of the substrate and the higher the partial pressure of the ClF3 gas when the ClF3 gas is supplied, the faster the etching rate.
As is clear from
As an example, the surface roughness Rq of the Ru film 20 after alternately and repeatedly performing the supply of the ClF3 gas (step S301) and the discharge of the ClF3 gas (step S302) was 0.79 nm. Meanwhile, the surface roughness Rq of the Ru film 20 after etching under the same conditions, except that the supply of the ClF3 gas was continued without performing the discharge of the ClF3 gas, was 1.10 nm. It was found that the smaller the Rq, the shorter the period of recess and projection on the surface and the smoother the surface.
Therefore, it was found that the Ru film 20 having a smooth surface can be obtained by repeating the supply and discharge of the ClF3 gas.
In Reference Examples 5 to 10, similarly to Reference Examples 1 to 4, substrates in each of which a Ru film 20 having a film thickness of 24.8 nm was formed on the entire surface of a single crystal silicon substrate as the base substrate 14 through a CVD method were prepared. The Ru films 20 were etched using O3 gas under the same conditions except for the conditions shown in Table 2. The etching conditions are shown in Table 2 collectively.
The O3 gas was generated from O2 gas, and a mixed gas of the O2 gas and the O3 gas was supplied into the processing container 120. The O3 gas concentration in the mixed gas was 250 g/m3 as shown in Table 2. During the etching of the Ru films 20, the mixed gas was continuously supplied, and the mixed gas was not discharged.
As is clear from
In Reference Example 11, a substrate in which a TiN film as the conductive film 40 was formed on the entire surface of a single crystal silicon substrate as the base substrate 14 through the ALD method was prepared, and the TiN film was etched through the method illustrated in
Although the embodiments of the film formation method and the film formation apparatus according to the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments or the like. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope of the claims. Of course, these also fall within the technical scope of the present disclosure.
This application claims priority based on Japanese Patent Application No. 2019-048532 filed with the Japan Patent Office on Mar. 15, 2019, and the entire disclosure of Japanese Patent Application No. 2019-048532 is incorporated herein in its entirety by reference.
10: substrate, 11: conductive film, 12: insulating film, 14: base substrate, 20: Ru film, 21: product, 30: self-assembled monolayer (SAM), 40: conductive film, 41: product, 100: film formation apparatus, 110: processing unit, 120: processing container, 130: substrate holder, 140: heater, 150: gas supplier, 160: gas discharger, 170: transfer apparatus, 180: controller
| Number | Date | Country | Kind |
|---|---|---|---|
| 2019-048532 | Mar 2019 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2020/009208 | 3/4/2020 | WO | 00 |
