Patent Application
20230062105
This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2021-139585, filed on Aug. 30, 2021, the entire contents of which are incorporated herein by reference.
The present disclosure relates to a film forming method and a film forming apparatus.
Patent Document 1 discloses a technique of cleaning, after performing a film forming process or the like in a processing container of a microwave plasma processing apparatus, an interior of the processing container by using NF3 gas excited by plasma.
According to one embodiment of the present disclosure, there is provided a film forming method of forming a film on a substrate by using a film forming apparatus including a processing container and an aluminum-containing stage on which the substrate is placed in the processing container. The film forming method includes: forming the film on one substrate or consecutively on a plurality of substrates by supplying a film formation gas into the processing container while heating the substrate on the stage; cleaning an interior of the processing container by a fluorine-containing gas by setting a temperature of the stage to a first temperature at which a vapor pressure of an aluminum fluoride becomes lower than a control pressure in the processing container in a state in which the substrate is unloaded from the processing container; and performing a precoating continuously to the cleaning the interior of the processing container such that a precoat film is formed on at least a surface of the stage by setting the temperature of the stage to a second temperature at which the vapor pressure of the aluminum fluoride becomes lower than the control pressure in the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the precoating are repeatedly performed.
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the present disclosure, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the present disclosure.
Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one of ordinary skill in the art that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, systems, and components have not been described in detail so as not to unnecessarily obscure aspects of the various embodiments.
Hereinafter, embodiments will be described in detail with reference to the accompanying drawings.
A film forming apparatus 100 is configured as a plasma processing apparatus that performs plasma processing by using microwave plasma.
The film forming apparatus 100 includes a processing container (chamber) 1 that accommodates a substrate W. The film forming apparatus 100 performs a film forming process on the substrate W by using surface wave plasma, which is formed in a vicinity of an inner wall surface of a ceiling wall in the processing container 1 by microwaves radiated in the processing container 1. A film formed by the film forming process is not particularly limited, and an example thereof includes a Si-containing film such as a silicon nitride film (SiN film). Although a semiconductor wafer is exemplified as the substrate W, the substrate W is not limited to the semiconductor wafer and may be another substrate such as an FPD substrate or a ceramic substrate.
The film forming apparatus 100 includes a plasma source 2, a gas supply mechanism 3, and a controller 4 in addition to the processing container 1.
The processing container 1 includes a substantially cylindrical container main body 10 having an open upper portion and a ceiling wall 20 that closes the upper opening of the container main body 10, so that a plasma processing space is formed inside the processing container 1. The container main body 10 is made of a metallic material such as aluminum or stainless steel and is grounded. The ceiling wall 20 is made of a metallic material such as aluminum or stainless steel and has a disk shape. A seal ring 129 is interposed on a contact surface between the container main body 10 and the ceiling wall 20, whereby an interior of the processing container 1 is airtightly sealed.
A stage 11 on which the substrate W is placed is horizontally provided in the processing container 1, and is supported by a cylindrical support 12 erected at a center of a bottom of the processing container 1. The stage 11 is made of an aluminum (Al)-containing material, for example, an aluminum nitride (AlN), which is insulating ceramic. In addition, the material constituting the stage 11 may be alumina (Al2O3), which is also Al-containing insulating ceramic. The support 12 may be made of metal or ceramic. When the support 12 is made of metal, an insulating member 12a is interposed between the support 12 and the bottom of the processing container 1. A heater 13 is provided in the stage 11, and a heater power supply 14 is connected to the heater 13. By supplying power from the heater power supply 14 to the heater 13, the stage 11 is heated to an arbitrary temperature up to, for example, 700 degrees C. The stage 11 is provided with three lifting pins (not illustrated) for raising and lowering the substrate W, so that the substrate W is delivered in a state in which the lifting pins protrude from a surface of the stage 11. The stage 11 may be further provided with an electrostatic chuck for electrostatically attracting the substrate W, a gas flow path for supplying a heat transfer gas to a rear surface of the substrate W, or the like. In addition, the stage 11 may be provided with an electrode, and a radio-frequency bias for drawing ions in plasma may be applied to the electrode.
An exhaust pipe 15 is connected to the bottom of the processing container 1, and an exhaust device 16 including a vacuum pump is connected to the exhaust pipe 15. When the exhaust device 16 is operated, the interior of the processing container 1 is evacuated, whereby the interior of the processing container 1 is quickly depressurized to a predetermined degree of vacuum. A side wall of the processing container 1 is provided with a load/unload port 17 for loading and unloading the substrate W and a gate valve 18 for opening and closing the load/unload port 17.
The plasma source 2 is for generating microwaves and radiating the generated microwaves into the processing container 1 to generate plasma, and includes a microwave output 30, a microwave transmitter 40, and microwave radiators 50.
The microwave output 30 includes a microwave power supply, a microwave oscillator that oscillates microwaves, an amplifier that amplifies the oscillated microwaves, and a distributor that distributes the amplified microwaves into plural ones. Thus, the microwaves distributed into plural ones are output.
The microwaves output from the microwave output 30 are radiated into the processing container 1 via the microwave transmitter 40 and the microwave radiators 50. In addition, a gas is supplied into the processing container 1 as described later, and the supplied gas is excited by the introduced microwaves to form surface wave plasma.
The microwave transmitter 40 transmits the microwaves output from the microwave output 30. The microwave transmitter 40 includes a plurality of amplifiers 42, a central microwave introducer 43a disposed at a center of the ceiling wall 20, and six peripheral microwave introducers 43b disposed at equal intervals in a peripheral portion of the ceiling wall 20. The plurality of amplifiers 42 amplifies the microwaves distributed by the distributor of the microwave output 30, and are provided correspondingly to the central microwave introducer 43a and the six peripheral microwave introducers 43b, respectively. The central microwave introducer 43a and the six peripheral microwave introducers 43b have a function of introducing the microwaves output from the amplifiers 42, which are provided correspondingly thereto, respectively, into the microwave radiators 50, and have an impedance-matching function.
Each of the central microwave introducer 43a and the peripheral microwave introducers 43b has a configuration in which a cylindrical outer conductor 52 and a rod-shaped inner conductor 53 provided at a center thereof are coaxially disposed. A space between the outer conductor 52 and the inner conductor 53 forms a microwave transmission path 44, which is fed with microwave power so that the microwaves propagate toward the microwave radiator 50 therethrough.
Each of the central microwave introducer 43a and the peripheral microwave introducers 43b is provided with a pair of slugs 54 and an impedance adjuster 140 located at a tip portion thereof. By moving the slugs 54, an impedance of a load (plasma) in the processing container 1 is matched with a characteristic impedance of the microwave power supply in the microwave output 30. The impedance adjuster 140 is made of a dielectric material, and adjusts an impedance of the microwave transmission path 44 by a relative dielectric constant of the impedance adjuster 140.
Each of the microwave radiators 50 includes a slow-wave member 121 or 131, a slot antenna 124 or 134 having a slot 122 or 132, and a dielectric member 123 or 133. The slow-wave members 121 and 131 are provided at positions corresponding to the central microwave introducer 43a on a top surface of the ceiling wall 20 and at positions corresponding to the peripheral microwave introducers 43b on the top surface of the ceiling wall 20, respectively. In addition, the dielectric members 123 and 133 are provided inside the ceiling wall 20 at positions corresponding to the central microwave introducer 43a and at the peripheral microwave introducers 43b, respectively. Slots 122 and 132 are provided in a portion of the ceiling wall 20 between the slow-wave member 121 and the dielectric member 123, and portions of the ceiling wall 20 between the slow-wave members 131 and the dielectric members 133, respectively, and the portions where the slots are formed become the slot antennas 124 and 134, respectively.
Each of the slow-wave members 121 and 131 has a disk shape, is disposed to surround a tip portion of the inner conductor 53. Each of the slow-wave members 121 and 131 has a dielectric constant greater than that of vacuum, and is made of, for example, quartz, ceramic, a fluorine-based resin such as polytetrafluoroethylene, or a polyimide-based resin. The slow-wave members 121 and 131 have a function of shortening a wavelength of the microwaves than that in vacuum to reduce a size of the antennas. The slow-wave members 121 and 131 can adjust a phase of the microwaves based on a thickness thereof, and the thickness of the slow-wave members 121 and 131 is adjusted such that the slot antennas 124 and 134 become “antinodes” of standing waves to minimize reflection and maximize radiant energy of the slot antennas 124 and 134.
Like the slow-wave members 121 and 131, the dielectric members 123 and 133 are made of, for example, quartz, ceramic such as alumina (Al2O3), a fluorine-based resin such as polytetrafluoroethylene, or a polyimide-based resin. The dielectric members 123 and 133 are inserted into spaces formed inside the ceiling wall 20, and concave windows 21 are formed on a bottom surface of the ceiling wall 20 at positions corresponding to the dielectric members 123 and 133. Therefore, the dielectric members 123 and 133 are exposed in the processing container 1 and function as dielectric windows for supplying the microwaves to a plasma generation space U.
The number of peripheral microwave introducers 43b and dielectric members 133 is not limited to six, and may be two or more, specifically, three or more.
As will be described later, the gas supply mechanism 3 supplies a film formation gas, a cleaning gas, and a gas for plasma processing after cleaning into the processing container 1. The gas supply mechanism 3 includes a gas supply 61, a gas pipe 62 via which the gas from the gas supply 61 is supplied, a gas flow path 63 provided in the ceiling wall 20, and gas discharge ports 64 from which the gas from the gas flow path 63 is discharged. A plurality of gas discharge ports 64 is provided in each of the windows 21 of the ceiling wall 20 to surround each of the dielectric members 123 and 133 (see
The gas supply mechanism 3 is not limited to discharge the gas from the ceiling wall 20 as in this example.
The controller 4 controls operations or processings of respective component of the film forming apparatus 100, for example, a gas supply of the gas supply mechanism 3, a frequency or output of the microwaves of the plasma source 2, an exhaust by the exhaust device 16, and the like. The controller 4 is typically a computer, and includes a main controller, an input device, an output device, a display device, and a storage device. The main controller includes a central processing unit (CPU), a RAM, and a ROM. The storage device has a computer-readable storage medium such as a hard disk, and writes and reads information necessary for control. In the controller 4, the CPU controls the film forming apparatus 100 by executing a program such as a process recipe stored in the ROM or the storage medium of the storage device while using the RAM as a work area.
Next, a film forming method performed in the film forming apparatus 100 configured as described above will be described.
As illustrated in
In the film forming process of step ST1, film formation is performed on one substrate W or consecutively on a plurality of substrates W in a state in which the precoating process of step ST3 to be described later is performed in the processing container 1. Up to about 100 substrates W are exemplified as the plurality of substrates W. The film to be formed is not particularly limited, but a silicon (Si)-containing film, for example, a SiN film is exemplified as an appropriate example. Other Si-containing films such as a SiCN film, a SiO2 film, and a SiON film may be formed.
When forming a SiN film, a Si-containing gas and a nitrogen-containing gas may be used as the film formation gas. As the Si-containing gas, for example, a silane-based compound gas such as monosilane (SiH4) gas, disilane (Si2H6) gas, and trimethylsilane (SiH(CH3)3) gas may be used. In addition, as the nitrogen-containing gas, for example, ammonia (NH3) gas, nitrogen (N2) gas, or the like may be used. When forming a SiCN film, as the film formation gas, a gas obtained by adding a carbon-containing gas to the above-mentioned Si-containing gas and nitrogen-containing gas may be used. As the carbon-containing gas, a hydrocarbon-based gas such as ethylene (C2H4) gas, acetylene (C2H2) gas, ethane (C2H6) gas, propylene (C3H6) gas, or trimethylsilane ((CH3)3SiH) gas may be used. When forming a SiO2 film, a Si-containing gas and an oxygen-containing gas may be used. As the Si-containing gas, the above-mentioned silane-based compound gas may be used. In addition, as the oxygen-containing gas, for example, oxygen (O2) gas, nitric oxide (NO) gas, nitrous oxide (N2O) gas, or the like may be used. When forming a SiON film, as the film formation gas, a gas obtained by adding the above-mentioned nitrogen-containing gas to the above-mentioned Si-containing gas and oxygen-containing gas may be used. In any cases, another gas, such as argon (Ar) gas or helium (He) gas, may be used as a dilution gas or a plasma generation gas.
The film to be formed is not limited to the Si-containing film, and may be, for example, a Ti-based film such as a Ti film or a TiN film, or a carbon film.
In the film forming process of step ST1, first, the gate valve 18 is opened, and a substrate W held on a transfer arm (not illustrated) is loaded into the processing container 1 from the load/unload port 17 and placed on the stage 11. Then, the gate valve 18 is closed. At this time, the stage 11 is heated by the heater 13, and a temperature of the substrate W on the stage 11 is controlled. When forming a SiN film as described above, it is desirable that the temperature of the substrate W is set to be 500 degrees C. or higher. Specifically, it is desirable that the temperature of the substrate W is set to be 500 degrees C. to 650 degrees C. Thereafter, the above-mentioned film formation gas according to the film to be formed is introduced into the processing container 1, the pressure in the processing container 1 is controlled, and the film forming process is performed by plasma chemical vapor disposition (CVD). The pressure in the processing container 1 may be arbitrarily selected depending on a distance from a plasma source to the substrate W, a manner in which plasma is diffused, a film formation rate, a thickness of the film to be formed, or the like. When the film to be formed is a SiN film, a pressure of 266 Pa or less may be used.
When generating plasma, the microwaves are output from the microwave output 30 of the plasma source 2 while introducing a gas into the processing container 1. At this time, the microwaves distributed and output from the microwave output 30 are amplified by the amplifiers 42 of the microwave transmitter 40 and then transmitted to the central microwave introducer 43a and the peripheral microwave introducers 43b. Thereafter, the transmitted microwaves penetrate the slow-wave members 121 and 131 of the microwave radiators 50, the slots 122 and 132 of the slot antennas 124 and 134, and the dielectric members 123 and 133 which are microwave transmission windows, and are radiated into the processing container 1. At this time, by moving the slugs 54, the impedance is automatically matched, and the microwaves are supplied in a state in which there is substantially no power reflection. The radiated microwaves propagate on the surface of the ceiling wall 20 as surface waves. The gas introduced into the processing container 1 is excited by electric fields of the microwaves, and surface wave plasma is formed in the plasma generation space U directly below the ceiling wall 20 in the processing container 1. Through plasma CVD by this surface wave plasma, a SiN film, for example, is formed on the substrate W.
In the film forming apparatus 100 of the present embodiment, since the substrate W is disposed in a region distanced from a plasma generation region and plasma diffused from the plasma generation region is supplied to the substrate W, the plasma is essentially high density plasma having a low electron temperature. Since the electron temperature of the plasma is controlled to be low, it is possible to perform film formation without damaging the formed film or elements of the substrate W, whereby a high-quality film can be obtained by high-density plasma. In addition, since the film quality is improved as a film formation temperature increases, when the film to be formed is a SiN film, a higher quality film can be formed by increasing the film formation temperature to 500 degrees C. or higher as described above.
After forming the film such as a SiN film as described above, the substrate W is unloaded from the processing container 1 and the film forming process of step ST1 ends.
After the film forming process of step ST1 as described above, the cleaning process of step ST2 is carried out. As illustrated in
The cleaning process of step ST2 is performed by a fluorine-containing gas. As the fluorine-containing gas, for example, radicals or ions of NF3 gas excited by plasma may be used. The plasma at this time may be generated by using the plasma source 2 of the film forming apparatus 100, or may be generated by using another plasma source, for example, a remote plasma. The NF3 gas is supplied from the gas supply mechanism 3 into the processing container 1. The NF3 gas may be diluted with Ar gas or He gas. In addition, in order to adjust a cleaning speed, chlorine (Cl2) gas, O2 gas, N2 gas, hydrogen bromide (HBr) gas, carbon tetrafluoride (CF4) gas, or the like may be added. The NF3 gas excited by the plasma may be appropriately used, for example, when the film to be formed on the substrate W is a Si-containing film such as a SiN film.
As the fluorine-containing gas used for cleaning, a gas other than the NF3 gas, such as F2 gas, CF-based gas, or ClF3 gas, may be used. Such other fluorine-containing gases may not be excited by plasma, and may be diluted with Ar gas or He gas. In addition, another additive gas may be added to the fluorine-containing gas. The fluorine-containing gas may be selected depending on a material of a film adhering to and deposited in the processing container 1.
In the cleaning process, when the stage 11 is at a high temperature, the fluorine-containing gas used as the cleaning gas reacts with an Al-containing material such as AlN constituting the stage 11. As a result, as illustrated in
Therefore, in the present embodiment, during the cleaning process of step ST2, the temperature of the stage 11 is lowered to suppress sublimation of aluminum fluoride (AlFx). More specifically, the temperature of the stage 11 is controlled to be a temperature at which the vapor pressure of AlFx becomes lower than the control pressure in the vicinity of the ultimate vacuum degree of the processing container 1. For example, in the case of AlF3, the temperature of the stage 11 is controlled such that the control pressure in the vicinity of the ultimate vacuum degree in the processing container 1 becomes higher than the vapor pressure curve of AlF3 in
Lowering the cleaning temperature also has an effect of reducing a reaction temperature of a fluoride reaction between AlN of the stage 11 and the fluorine-containing gas (NF3 gas) as the cleaning gas. Thus, there is an effect that an amount of generated aluminum fluoride (AlFx) itself can also be reduced.
In the cleaning process of step ST2, basically, the pressure in the processing container 1 when supplying the cleaning gas and actually performing cleaning may be set arbitrary depending on a volume of the processing container 1, or a manner in which plasma used for cleaning is diffused when the plasma is used. The pressure is exemplified in a range of 10 Pa to 1,000 Pa, specifically, 400 Pa.
The precoating process of step ST3 is performed after the cleaning process of step ST2 and prior to a subsequent film forming process. In the precoating process, in a state in which the substrate W does not exist in the processing container 1, a precoat film including a film to be formed on the substrate W in the film forming process or components of the film is deposited on at least the surface of the stage 11 inside the processing container 1. At this time, the precoat film is also deposited on the surface of the side wall or the ceiling wall 20 of the processing container 1. As the precoat film, the same material as the film to be formed on the substrate W or a material containing the components of the film to be formed may be used. For example, when the film to be formed is a SiN film, the precoat film may be the same SiN film, or may be another Si-based film such as a SiCN film, a SiON film, or a SiOC film.
The precoating process of step ST3 is performed continuously to the cleaning process, while as in the cleaning process of step ST2, the temperature of the stage 11 is controlled to be a temperature at which the vapor pressure of aluminum fluoride (AlFx) becomes lower than the control pressure in the processing container 1. In addition, it is desirable that the temperature of the stage 11 in the precoating process of step ST3 is lower than the temperature of the stage 11 in the film forming process of step ST1 as in the case of the cleaning process. It is more desirable that the temperature of the stage 11 is set to 450 degrees C. or lower. In addition, it is furthermore desirable that the temperature of the stage 11 in the precoating process of step ST3 is the same as the temperature of the stage 11 in the cleaning process of step ST2. By lowering the temperature of the stage 11 and performing precoating as described above, it is possible to suppress sublimation of AlFx itself during the precoating process. In addition, by performing the precoating process continuously to the cleaning process, as illustrated in
Here, performing the precoating process “continuously” to the cleaning process means that the precoating process is performed promptly after the cleaning process without going through other processes. The precoating process may include a preprocess such as plasma processing performed before forming the precoat film 401.
It is desirable that the pressure inside the processing container 1 in the precoating process is set to be a low pressure of, for example, 100 Pa or less, so that the precoat film is formed preferentially on the surface of the stage 11.
As described above, in the present embodiment, as shown in
Next, an experiment confirming an effect of the present embodiment will be described.
Here, amounts of Al contamination were measured for the following Samples A to C by a measurement method which will be illustrated below. Sample A is a sample that was cleaned at a high temperature (600 degrees C.) and then subjected to film formation at the same high temperature. Sample B is a sample that was cleaned at a low temperature (450 degrees C.) and then subjected to film formation at a high temperature. Sample C is a sample of the present embodiment that was continuously subjected to cleaning and precoating at a low temperature and then subjected to film formation at a high temperature. As the measurement method, as illustrated in
Next, other embodiments will be described.
In the absence of a gas flow, the pressure in the processing container 1 is generally controlled to be a low pressure in the vicinity of the ultimate vacuum degree in order to control leaks and residual gas in the processing container 1. In addition, at the time of processing the substrate W, the pressure is controlled by adjusting a gas flow and an exhaust amount of an exhaust system. In such a pressure control, when the temperature of the stage 11 is increased as the process proceeds from the low-temperature precoating process toward the high-temperature film forming process, for example, the vapor pressure of AlFx may become higher than the low pressure in the vicinity of the ultimate vacuum degree, whereby sublimation of AlFx may occur. Therefore, in the present embodiment, when the temperature of the stage 11 is increased from the temperature in the precoating process to the temperature in the film forming process, an inert gas (Ar gas or N2 gas) is flown to increase the control pressure in the processing container 1 as illustrate in
As shown in
As a pressure in the pressure increase control, 266 Pa, for example, is used. In order to suppress sublimation of AlFx during the temperature increase and the like, it is desirable that the pressure in the pressure increase control is set such that a certain difference is obtained with respect to the vapor pressure of AlFx.
Next, another embodiment will be described.
In the present embodiment, as illustrated in
The low-temperature precoating process of step ST3 is performed to shield AlFx on the stage 11 while suppressing sublimation of AlFx, and it is desirable that the precoating condition is set such that the precoating film is dense and has a high shielding effect due to the high film density. For example, when a SiN film is formed as a precoat film for forming a SiN film, it is desirable that the precoat film has a high RI value (refractive index) in order to obtain a high film density. The low-temperature precoating process of step ST3 is appropriate for forming a precoat film having such characteristics.
However, when forming a film on the substrate W, characteristics required for the film vary depending on various requirements on a semiconductor device. For example, when forming a SiN film on the substrate W, there is a requirement to form a SiN film having a low RI value or a requirement to control a stress value of the formed SiN film. Physical property values of a SiN film are determined by a film forming condition of the SiN film, but are also affected by a film quality of a precoat film. In order to form a SiN film having desired characteristics on the substrate W, it is also desirable that characteristics of the precoat film itself are close to those of the SiN film to be formed on the substrate W.
Therefore, in the present embodiment, after the low-temperature precoating process of step ST3, the second precoating process of step ST4 is performed under a condition appropriate for the film forming condition of the film to be formed on the substrate W. As a result, as illustrated in
In addition, as illustrated in
Although embodiments have been described above, it should be considered that the embodiments disclosed herein are exemplary in all respect and are not restrictive. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope and gist of the appended claims.
For example, in the above-described embodiments, as a film forming apparatus for performing a film forming process, an apparatus that forms a film by using surface wave plasma generated by radiating microwaves from a plurality of microwave introducers into a processing container has been exemplified, but the present disclosure is not limited thereto. The number of microwave introducers may be one, and the plasma processing is not limited to radiating microwaves for generating plasma. For example, various other plasmas, such as capacitively coupled plasma (CCP), inductively coupled plasma (ICP), and electron cyclotron resonance (ECR) plasma, may be used. The film forming apparatus may be a thermal CVD apparatus or the like that does not use plasma.
In the above-described embodiments, a Si-containing film such as a SiN film is mainly exemplified as a film to be formed, but the present disclosure is not limited thereto. As described above, another film such as a Ti-based film or a carbon film may be formed. In addition, in the above-described embodiments, an example in which NF3 gas is excited by plasma as a cleaning gas has been illustrated, but as described above, another fluorine-containing gas such as F2 gas, CF-based gas, or ClF3 gas may also be used. An appropriate cleaning gas may be used depending on a film to be formed. For example, in a case of a Si-containing gas such as SiN, NF3 gas excited by plasma may be appropriately used, in a case of a Ti-based film, F2 gas or ClF3 gas may be appropriately used, and in a case of a carbon film, a CF-based gas such as CF4 gas may be appropriately used.
The present disclosure provides a film forming method and a film forming apparatus that are capable of suppressing an influence of an aluminum fluoride, which is generated by a reaction between a fluorine-containing gas as a cleaning gas and an aluminum-containing stage when an interior of a processing container is cleaned with the fluorine-containing gas after a film forming process, on film formation.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-139585 | Aug 2021 | JP | national |
