Claims
- 1. A memory circuit, including a memory cell comprising:(a) a capacitor including: a bottom electrode having a conductive adhesion-promoting layer at a first surface; a storage layer in contact with a second surface of said bottom electrode; a top electrode in contact with said storage layer; (b) a transistor comprising first and second terminals and a wordline control terminal; and (c) a bitline coupled to said first transistor terminal; said bottom electrode coupled to said second transistor terminal by a plug comprising a barrier adjacent said adhesion-promoting layer, said barrier being thicker than said adhesion-promoting layer.
- 2. The memory circuit of claim 1, wherein said barrier comprises Ti—Al—N.
- 3. The memory circuit of claim 2, wherein said Ti—Al—N comprises aluminum in the range of 0% to 50%.
- 4. The memory circuit of claim 3, wherein said Ti—Al—N is (Ti0.75Al0.25)—N.
- 5. The memory circuit of claim 1, wherein said adhesion-promoting layer comprises Ti—Al—N.
- 6. The memory circuit of claim 5, wherein said Ti—Al—N comprises aluminum in the range of 0% to 50%.
- 7. The memory circuit of claim 6, wherein said Ti—Al—N is (Ti0.75Al0.25)—N.
- 8. The memory circuit of claim 1, wherein said bottom electrode is platinum.
- 9. The memory circuit of claim 1, wherein said bitline is at a distance further from said transistor than is said capacitor.
- 10. The memory circuit of claim 1, wherein said capacitor is at a distance further from said transistor than is said bitline.
- 11. A capacitor, comprising:(a) a bottom electrode having a conductive adhesion-promoting layer made of Ti—Al—N and at a first surface; (b) a storage layer in contact with a second surface of said bottom electrode; (c) a top electrode in contact with said storage layer; and (d) a contact plug connected to said bottom electrode by said adhesion-promoting layer, said contact plug comprising a barrier adjacent said adhesion-promoting layer.
- 12. The capacitor of claim 11, wherein said storage layer comprises a high-dielectric constant material.
- 13. The capacitor of claim 12, wherein said high-dielectric constant material is BST.
- 14. The capacitor of claim 11, wherein said bottom electrode is platinum.
- 15. The capacitor of claim 11, wherein said barrier is Ti—Al—N.
- 16. An electrode structure for a capacitor, comprising:(a) a contact plug comprising an oxidation barrier; (b) a bottom electrode comprising a conductive adhesion-promoting portion and an oxidation-resistant portion, said adhesion-promoting portion made of Ti—Al—N and contacting said oxidation barrier of said contact plug.
- 17. The electrode structure of claim 16, wherein said contact plug comprises a polysilicon and said oxidation barrier comprises Ti—Al—N.
- 18. The electrode structure of claim 16, wherein said bottom electrode is of a first width and said contact plug is of a second width, said first width being greater than said second width.
Parent Case Info
This application claims priority under 35 USC §119(e) (1) of provisional application No. 60/051,403, filed Jul. 1, 1997.
US Referenced Citations (6)
Number |
Name |
Date |
Kind |
5231306 |
Meikle et al. |
Jul 1993 |
A |
5360995 |
Graas |
Nov 1994 |
A |
5382817 |
Kashihara |
Jan 1995 |
A |
5504041 |
Summerfelt |
Apr 1996 |
A |
5609927 |
Summerfelt et al. |
Mar 1997 |
A |
5679969 |
Evans, Jr. et al. |
Oct 1997 |
A |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/051403 |
Jul 1997 |
US |