INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME

BACKGROUND

The semiconductor industry has experienced rapid growth due to ongoing improvements in the integration density of a variety of electronic components (e.g., transistors, diodes, resistors, capacitors, etc.). For the most part, improvement in integration density has resulted from iterative reduction of minimum feature size, which allows more components to be integrated into a given area. As the demand for shrinking electronic devices has grown, a need for smaller and more creative packaging techniques of semiconductor dies has emerged.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a cross-sectional view of an integrated circuit die.

FIGS. 2-14 are views of intermediate stages in the manufacturing of integrated circuit packages, in accordance with some embodiments.

FIG. 15 is a cross-sectional view of an integrated circuit package, in accordance with some embodiments.

FIGS. 16-19 are views of intermediate stages in the manufacturing of integrated circuit packages, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

According to various embodiments, integrated circuit packages are formed by packaging integrated circuit dies in a wafer. The wafer is singulated to form intermediate package components. The package components are then attached to package substrates to form the integrated circuit packages. In some embodiments, after the package components attached to the package substrates, heat dissipation structures are attached to the package components and may comprise indium. A retaining structure (e.g., a retaining wall) may be formed on the package substrate adjacent the package components and the heat dissipation structure. A lid may then be attached over the package components and the retaining structure followed by a heat clamping and/or a reflow process to attach the lid and/or the heat dissipation structure. By having a retaining structure, any subsequent bleeding or reflow of the metal (e.g., indium) the heat dissipation structure—during the heat clamp, reflow, or normal operation of the package—is contained. This containment prevents the metal overflow from shorting package components and from voids being formed in the heat dissipation structure, which can improve the reliability and performance of the packages.

FIG. 1 is a cross-sectional view of an integrated circuit die 50. Integrated circuit dies 50 will be packaged in subsequent processing to form integrated circuit packages. Each integrated circuit die 50 may be a logic device (e.g., central processing unit (CPU), graphics processing unit (GPU), microcontroller, etc.), a memory device (e.g., dynamic random access memory (DRAM) die, static random access memory (SRAM) die, etc.), a power management device (e.g., power management integrated circuit (PMIC) die), a radio frequency (RF) device, a sensor device, a micro-electro-mechanical-system (MEMS) device, a signal processing device (e.g., digital signal processing (DSP) die), a front-end device (e.g., analog front-end (AFE) dies), the like, or a combination thereof (e.g., a system-on-a-chip (SoC) die). The integrated circuit die 50 may be formed in a wafer, which may include different die regions that are singulated in subsequent steps to form a plurality of integrated circuit dies 50. The integrated circuit die 50 includes a semiconductor substrate 52, an interconnect structure 54, die connectors 56, and a dielectric layer 58.

The semiconductor substrate 52 may be a substrate of silicon, doped or undoped, or an active layer of a semiconductor-on-insulator (SOI) substrate. The semiconductor substrate 52 may include other semiconductor materials, such as germanium; a compound semiconductor including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor including silicon-germanium, gallium arsenide phosphide, aluminum indium arsenide, aluminum gallium arsenide, gallium indium arsenide, gallium indium phosphide, and/or gallium indium arsenide phosphide; or combinations thereof. Other substrates, such as multi-layered or gradient substrates, may also be used. The semiconductor substrate 52 has an active surface (e.g., the surface facing upward) and an inactive surface (e.g., the surface facing downward). Devices are at the active surface of the semiconductor substrate 52. The devices may be active devices (e.g., transistors, diodes, etc.), capacitors, resistors, etc. The inactive surface may be free from devices.

The interconnect structure 54 is over the active surface of the semiconductor substrate 52, and is used to electrically connect the devices of the semiconductor substrate 52 to form an integrated circuit. The interconnect structure 54 may include one or more dielectric layer(s) and respective metallization layer(s) in the dielectric layer(s). Acceptable dielectric materials for the dielectric layers include oxides such as silicon oxide or aluminum oxide; nitrides such as silicon nitride; carbides such as silicon carbide; the like; or combinations thereof such as silicon oxynitride, silicon oxycarbide, silicon carbonitride, silicon oxycarbonitride or the like. Other dielectric materials may also be used, such as a polymer such as polybenzoxazole (PBO), polyimide (PI), a benzocyclobutene (BCB) based polymer, or the like. The metallization layers may include conductive vias and/or conductive lines to interconnect the devices of the semiconductor substrate 52. The metallization layers may be formed of a conductive material, such as a metal, such as copper, cobalt, aluminum, gold, combinations thereof, or the like. The interconnect structure 54 may be formed by a damascene process, such as a single damascene process, a dual damascene process, or the like.

Die connectors 56 are at the front-side 50F of the integrated circuit die 50. The die connectors 56 may be conductive pillars, pads, or the like, to which external connections are made. The die connectors 56 are in and/or on the interconnect structure 54. For example, the die connectors 56 may be part of an upper metallization layer of the interconnect structure 54. The die connectors 56 can be formed of a metal, such as copper, aluminum, or the like, and can be formed by, for example, plating, or the like.

Optionally, solder regions (not separately illustrated) may be disposed on the die connectors 56 during formation of the integrated circuit die 50. The solder regions may be used to perform chip probe (CP) testing on the integrated circuit die 50. For example, the solder regions may be solder balls, solder bumps, or the like, which are used to attach a chip probe to the die connectors 56. Chip probe testing may be performed on the integrated circuit die 50 to ascertain whether the integrated circuit die 50 is a known good die (KGD). Thus, only integrated circuit dies 50, which are KGDs, undergo subsequent processing are packaged, and dies which fail the chip probe testing are not packaged. After testing, the solder regions may be removed in subsequent processing steps.

A dielectric layer 58 is at the front-side 50F of the integrated circuit die 50. The dielectric layer 58 is in and/or on the interconnect structure 54. For example, the dielectric layer 58 may be an upper dielectric layer of the interconnect structure 54. The dielectric layer 58 laterally encapsulates the die connectors 56. The dielectric layer 58 may be an oxide, a nitride, a carbide, a polymer, the like, or a combination thereof. The dielectric layer 58 may be formed, for example, by spin coating, lamination, chemical vapor deposition (CVD), or the like. Initially, the dielectric layer 58 may bury the die connectors 56, such that the top surface of the dielectric layer 58 is above the top surfaces of the die connectors 56. The die connectors 56 are exposed through the dielectric layer 58 during formation of the integrated circuit die 50. Exposing the die connectors 56 may remove any solder regions that may be present on the die connectors 56. A removal process can be applied to the various layers to remove excess materials over the die connectors 56. The removal process may be a planarization process such as a chemical mechanical polish (CMP), an etch-back, combinations thereof, or the like. After the planarization process, top surfaces of the die connectors 56 and the dielectric layer 58 are substantially coplanar (within process variations) such that they are level with one another. The die connectors 56 and the dielectric layer 58 are exposed at the front-side 50F of the integrated circuit die 50.

In some embodiments, the integrated circuit die 50 is a stacked device that includes multiple semiconductor substrates 52. For example, the integrated circuit die 50 may be a memory device that includes multiple memory dies such as a hybrid memory cube (HMC) device, a high bandwidth memory (HBM) device, or the like. In such embodiments, the integrated circuit die 50 includes multiple semiconductor substrates 52 interconnected by through-substrate vias (TSVs) such as through-silicon vias. Each of the semiconductor substrates 52 may (or may not) have a separate interconnect structure 54.

FIGS. 2-14 are views of intermediate stages in the manufacturing of integrated circuit packages 200, in accordance with some embodiments. FIGS. 2-13 are cross-sectional views and a plan view of a process for forming package components 210 which include interposers, such as package components for chip-on-wafer-on-substrate (CoWoS®) devices 200. The package components 210 may be chip-on-wafer (CoW) package components.

The integrated circuit packages 200 (see FIG. 13) will be formed by initially packaging integrated circuit dies 50 to form package components 210 in a wafer 100. One package region 100A of the wafer 100 is illustrated, and integrated circuit dies 50 are packaged to form a package component 210 in each of the package regions 100A of the wafer 100. It should be appreciated that any quantity of package regions can be simultaneously processed to form any quantity of package components. The package regions 100A of the wafer 100 will be singulated to form the package components 210. The package components 210 will be attached to package substrates 220 (see e.g., FIG. 8 or 16). Heat dissipation structures 212/214/230/232/234/236 will then be formed on the package components 210 and package substrates 220 to complete formation of the integrated circuit packages 200 (see e.g., FIG. 13, 15, or 18).

In FIG. 2, a wafer 110 is obtained or formed. The wafer 110 comprises devices in a package region 100A, which will be singulated in subsequent processing to be included in the package component 210. The devices in the wafer 110 may be interposers, integrated circuit dies, or the like. In some embodiments, interposers 102 are formed in the wafer 110, which include a substrate 112, an interconnect structure 114, and conductive vias 120.

The substrate 112 may be a bulk semiconductor substrate, a semiconductor-on-insulator (SOI) substrate, a multi-layered semiconductor substrate, or the like. The substrate 112 may include a semiconductor material, such as silicon; germanium; a compound semiconductor including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide; an alloy semiconductor including silicon-germanium, gallium arsenide phosphide, aluminum indium arsenide, aluminum gallium arsenide, gallium indium arsenide, gallium indium phosphide, and/or gallium indium arsenide phosphide; or combinations thereof. Other substrates, such as multi-layered or gradient substrates, may also be used. The substrate 112 may be doped or undoped. In embodiments where interposers are formed in the wafer 110, the substrate 112 generally does not include active devices therein, although the interposers may include passive devices formed in and/or on a front surface (e.g., the surface facing upward in FIG. 2) of the substrate 112. In embodiments where integrated circuit devices are formed in the wafer 110, active devices such as transistors, capacitors, resistors, diodes, and the like, may be formed in and/or on the front surface of the substrate 112.

The interconnect structure 114 is over the front surface of the substrate 112, and is used to electrically connect the devices (if any) of the substrate 112. The interconnect structure 114 may include one or more dielectric layer(s) and respective metallization layer(s) in the dielectric layer(s). Acceptable dielectric materials for the dielectric layers include oxides such as silicon oxide or aluminum oxide; nitrides such as silicon nitride; carbides such as silicon carbide; the like; or combinations thereof such as silicon oxynitride, silicon oxycarbide, silicon carbonitride, silicon oxycarbonitride or the like. Other dielectric materials may also be used, such as a polymer such as polybenzoxazole (PBO), polyimide, a benzocyclobutene (BCB) based polymer, or the like. The metallization layer(s) may include conductive vias and/or conductive lines to interconnect any devices together and/or to an external device. The metallization layer(s) may be formed of a conductive material, such as a metal, such as copper, cobalt, aluminum, gold, combinations thereof, or the like. The interconnect structure 114 may be formed by a damascene process, such as a single damascene process, a dual damascene process, or the like.

In some embodiments, die connectors 116 and a dielectric layer 118 are at the front-side of the wafer 110. Specifically, the wafer 110 may include die connectors 116 and a dielectric layer 118 that are similar to those of the integrated circuit die 50 described for FIG. 1. For example, the die connectors 116 and the dielectric layer 118 may be part of an upper metallization layer of the interconnect structure 114.

The conductive vias 120 extend into the interconnect structure 114 and/or the substrate 112. The conductive vias 120 are electrically connected to metallization layer(s) of the interconnect structure 114. The conductive vias 120 are also sometimes referred to as through substrate vias (TSVs). As an example to form the conductive vias 120, recesses can be formed in the interconnect structure 114 and/or the substrate 112 by, for example, etching, milling, laser techniques, a combination thereof, and/or the like. A thin dielectric material may be formed in the recesses, such as by using an oxidation technique. A thin barrier layer may be conformally deposited in the openings, such as by CVD, atomic layer deposition (ALD), physical vapor deposition (PVD), thermal oxidation, a combination thereof, and/or the like. The barrier layer may be formed of an oxide, a nitride, a carbide, combinations thereof, or the like. A conductive material may be deposited over the barrier layer and in the openings. The conductive material may be formed by an electro-chemical plating process, CVD, ALD, PVD, a combination thereof, and/or the like. Examples of conductive materials are copper, tungsten, aluminum, silver, gold, a combination thereof, and/or the like. Excess conductive material and barrier layer is removed from a surface of the interconnect structure 114 or the substrate 112 by, for example, a CMP. Remaining portions of the barrier layer and conductive material form the conductive vias 120.

In FIG. 3, integrated circuit dies 50 (e.g., a first integrated circuit die 50A and a plurality of second integrated circuit dies 50B) are attached to the wafer 110. In the embodiment shown, multiple integrated circuit dies 50 are placed adjacent one another, including the first integrated circuit die 50A and the second integrated circuit dies 50B, where the first integrated circuit die 50A is between the second integrated circuit dies 50B. In some embodiments, the first integrated circuit die 50A is a logic device, such as a CPU, GPU, or the like, and the second integrated circuit dies 50B are memory devices, such as DRAM dies, HMC modules, HBM modules, or the like. In some embodiments, the first integrated circuit die 50A is the same type of device (e.g., SoCs) as the second integrated circuit dies 50B.

In the illustrated embodiment, the integrated circuit dies 50 are attached to the wafer 110 with solder bonds, such as with conductive connectors 132. The integrated circuit dies 50 may be placed on the interconnect structure 114 using, e.g., a pick-and-place tool. The conductive connectors 132 may be formed of a conductive material that is reflowable, such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, the like, or a combination thereof. In some embodiments, the conductive connectors 132 are formed by initially forming a layer of solder through methods such as evaporation, electroplating, printing, solder transfer, ball placement, or the like. Once a layer of solder has been formed on the structure, a reflow may be performed in order to shape the conductive connectors 132 into desired bump shapes. Attaching the integrated circuit dies 50 to the wafer 110 may include placing the integrated circuit dies 50 on the wafer 110 and reflowing the conductive connectors 132. The conductive connectors 132 form joints between corresponding die connectors 116 of the wafer 110 and die connectors 56 the integrated circuit dies 50, electrically connecting the interposer 102 to the integrated circuit dies 50.

An underfill 134 may be formed around the conductive connectors 132, and between the wafer 110 and the integrated circuit dies 50. The underfill 134 may reduce stress and protect the joints resulting from the reflowing of the conductive connectors 132. The underfill 134 may be formed of an underfill material such as a molding compound, epoxy, or the like. The underfill 134 may be formed by a capillary flow process after the integrated circuit dies 50 are attached to the wafer 110, or may be formed by a suitable deposition method before the integrated circuit dies 50 are attached to the wafer 110. The underfill 134 may be applied in liquid or semi-liquid form and then subsequently cured.

In other embodiments (not separately illustrated), the integrated circuit dies 50 are attached to the wafer 110 with direct bonds. For example, metal to metal and dielectric to dielectric bonding, fusion bonding, dielectric bonding, metal bonding, or the like may be used to directly bond corresponding dielectric layers 58, 118 and/or die connectors 56, 116 of the integrated circuit dies 50 and the wafer 110 without the use of adhesive or solder. The underfill 134 may be omitted when direct bonding is used. Further, a mix of bonding techniques could be used, e.g., some integrated circuit dies 50 could be attached to the wafer 110 by solder bonds, and other integrated circuit dies 50 could be attached to the wafer 110 by direct bonds.

In FIG. 4, an encapsulant 136 is formed on and around the integrated circuit dies 50. After formation, the encapsulant 336 encapsulates the integrated circuit dies 50, and the underfill 134 (if present) or the conductive connectors 132. The encapsulant 136 may be a molding compound, epoxy, or the like. The encapsulant 136 may be applied by compression molding, transfer molding, or the like, and is formed over the wafer 110 such that the integrated circuit dies 50 are buried or covered. The encapsulant 136 may be applied in liquid or semi-liquid form and then subsequently cured. The encapsulant 136 may be thinned to expose the integrated circuit dies 50. The thinning process may be a grinding process, a chemical-mechanical polish (CMP), an etch-back, combinations thereof, or the like. After the thinning process, the top surfaces of the integrated circuit dies 50 and the encapsulant 136 are coplanar (within process variations) such that they are level with one another. The thinning is performed until a desired amount of the integrated circuit dies 50 and/or the encapsulant 136 has been removed.

In FIG. 5, the substrate 112 is thinned to expose the conductive vias 130. Exposure of the conductive vias 130 may be accomplished by a thinning process, such as a grinding process, a chemical-mechanical polish (CMP), an etch-back, combinations thereof, or the like. In some embodiments (not separately illustrated), the thinning process for exposing the conductive vias 130 includes a CMP, and the conductive vias 130 protrude at the back-side of the wafer 110 as a result of dishing that occurs during the CMP. In such embodiments, an insulating layer (not separately illustrated) may optionally be formed on the back surface of the substrate 112, surrounding the protruding portions of the conductive vias 130. The insulating layer may be formed of a silicon-containing insulator, such as, silicon nitride, silicon oxide, silicon oxynitride, or the like, and may be formed by a suitable deposition method such as spin coating, CVD, plasma-enhanced CVD (PECVD), high density plasma CVD (HDP-CVD), or the like. After the substrate 112 is thinned, the exposed surfaces of the conductive vias 130 and the insulating layer (if present) or the substrate 112 are coplanar (within process variations) such that they are level with one another, and are exposed at the back-side of the wafer 110.

In FIG. 6, UBMs 146 are formed on the exposed surfaces of the conductive vias 130 and the substrate 112. As an example to form the UBMs 146 in this embodiment, a seed layer (not separately illustrated) is formed over the exposed surfaces of the conductive vias 130 and the substrate 112. In some embodiments, the seed layer is a metal layer, which may be a single layer or a composite layer including a plurality of sub-layers formed of different materials. In some embodiments, the seed layer includes a titanium layer and a copper layer over the titanium layer. The seed layer may be formed using, for example, PVD or the like. A photoresist is then formed and patterned on the seed layer. The photoresist may be formed by spin coating or the like and may be exposed to light for patterning. The pattern of the photoresist corresponds to the UBMs 146. The patterning forms openings through the photoresist to expose the seed layer. A conductive material is then formed in the openings of the photoresist and on the exposed portions of the seed layer. The conductive material may be formed by plating, such as electroplating or electroless plating, or the like. The conductive material may include a metal, such as copper, titanium, tungsten, aluminum, or the like. Then, the photoresist and portions of the seed layer on which the conductive material is not formed are removed. The photoresist may be removed by an acceptable ashing or stripping process, such as using an oxygen plasma or the like. Once the photoresist is removed, exposed portions of the seed layer are removed, such as by using an acceptable etching process. The remaining portions of the seed layer and conductive material form the UBMs 146.

Further, conductive connectors 148 are formed on the UBMs 146. The conductive connectors 148 may be ball grid array (BGA) connectors, solder balls, metal pillars, controlled collapse chip connection (C4) bumps, micro bumps, electroless nickel-electroless palladium-immersion gold technique (ENEPIG) formed bumps, or the like. The conductive connectors 148 may include a conductive material such as solder, copper, aluminum, gold, nickel, silver, palladium, tin, the like, or a combination thereof. In some embodiments, the conductive connectors 148 are formed by initially forming a layer of solder through evaporation, electroplating, printing, solder transfer, ball placement, or the like. Once a layer of solder has been formed on the structure, a reflow may be performed in order to shape the material into the desired bump shapes. In another embodiment, the conductive connectors 148 comprise metal pillars (such as copper pillars) formed by a sputtering, printing, electro plating, electroless plating, CVD, or the like. The metal pillars may be solder free and have substantially vertical sidewalls. In some embodiments, a metal cap layer is formed on the top of the metal pillars. The metal cap layer may include nickel, tin, tin-lead, gold, silver, palladium, indium, nickel-palladium-gold, nickel-gold, the like, or a combination thereof and may be formed by a plating process.

In FIG. 7, back-side metal 212 is formed along the back-side surface of the package component 210. The back-side metal 212 is formed of one or more layers. The back-side metal 212 may include multiple layers with each layer having different compositions and functionalities, such as, an adhesion layer, a diffusion blocking layer, and an anti-oxidation layer. In some embodiments, at least one of the layers is formed of a material with high thermal conductivity. The one or more layers of the back-side metal 212 may be formed of a metal or metal nitride, such as such as aluminum, titanium, titanium nitride, nickel, nickel vanadium, silver, gold, copper, combinations thereof, or the like, which may be conformally formed by a PVD process such as sputtering or evaporation, a plating process such as electroless plating or electroplating, a printing process such as inkjet printing, or the like. The back-side metal 212 will subsequently be singulated so that each package component 210 includes a portion of the back-side metal 212.

Although the back-side metal 212 is illustrated as being formed after the conducive connectors 148, in some embodiments, the back-side metal 212 may be formed before the conductive connectors 148.

Further, a singulation process is performed by cutting along scribe line regions, e.g., around the package region 100A. The singulation process may include sawing, dicing, or the like. For example, the singulation process can include sawing the encapsulant 136, the interconnect structure 114, and the substrate 112. The singulation process singulates the package region 100A from adjacent package regions. The resulting, singulated package component 210 is from the package region 100A. The singulation process forms interposers 102 from the singulated portions of the wafer 110. As a result of the singulation process, the outer sidewalls of the interposer 102, the back-side metal 212, and the encapsulant 136 are laterally coterminous (within process variations).

FIGS. 8, 9A, 9B, 10, 11, 12, 13, 14 illustrate various additional steps in the manufacturing of embodiment packages. The package components 210 including heat dissipation structures will be attached to package substrates 220 (see FIG. 13), thus completing formation of the integrated circuit packages 200. A single package component 210, a single package substrate 220, and a single integrated circuit package 200 are illustrated. It should be appreciated that multiple package components can be simultaneously processed to form multiple integrated circuit packages 200.

In FIG. 8, a package component 210 is attached to a package substrate 220 using the conductive connectors 148. The package substrate 220 includes a substrate core 222, which may be made of a semiconductor material such as silicon, germanium, diamond, or the like. Alternatively, compound materials such as silicon germanium, silicon carbide, gallium arsenic, indium arsenide, indium phosphide, silicon germanium carbide, gallium arsenic phosphide, gallium indium phosphide, combinations thereof, or the like, may also be used. Additionally, the substrate core 222 may be a SOI substrate. Generally, an SOI substrate includes a layer of a semiconductor material such as epitaxial silicon, germanium, silicon germanium, SOI, SGOI, or combinations thereof. In another embodiment, the substrate core 222 is an insulating core such as a fiberglass reinforced resin core. One example core material is fiberglass resin such as FR4. Alternatives for the core material include bismaleimide-triazine (BT) resin, or alternatively, other printed circuit board (PCB) materials or films. Build up films such as Ajinomoto build-up film (ABF) or other laminates may be used for the substrate core 222.

The substrate core 222 may include active and passive devices (not separately illustrated). Devices such as transistors, capacitors, resistors, combinations thereof, and the like may be used to generate the structural and functional requirements of the design for the system. The devices may be formed using any suitable methods.

The substrate core 222 may also include metallization layers and vias, and bond pads 224 over the metallization layers and vias. The metallization layers may be formed over the active and passive devices and are designed to connect the various devices to form functional circuitry. The metallization layers may be formed of alternating layers of dielectric material (e.g., low-k dielectric material) and conductive material (e.g., copper) with vias interconnecting the layers of conductive material, and may be formed through any suitable process (such as deposition, damascene, or the like). In some embodiments, the substrate core 222 is substantially free of active and passive devices.

The conductive connectors 148 are reflowed to attach the UBMs 146 to the bond pads 224. The conductive connectors 148 connect the package component 210, including the metallization layers 144 of the redistribution structure 140, to the package substrate 220, including metallization layers of the substrate core 222. Thus, the package substrate 220 is electrically connected to the integrated circuit dies 50. In some embodiments, passive devices (e.g., surface mount devices (SMDs), not separately illustrated) may be attached to the package component 210 (e.g., bonded to the UBMs 146) prior to mounting on the package substrate 220. In such embodiments, the passive devices may be bonded to a same surface of the package component 210 as the conductive connectors 148. In some embodiments, passive devices 226 (e.g., SMDs) may be attached to the package substrate 220, e.g., to the bond pads 224.

In some embodiments, an underfill 228 is formed between the package component 210 and the package substrate 220, surrounding the conductive connectors 148. The underfill 228 may be formed by a capillary flow process after the package component 210 is attached or may be formed by any suitable deposition method before the package component 210 is attached. The underfill 228 may be a continuous material extending from the package substrate 220 to the substrate 112.

Although not illustrated, the package substrate 220 can have conductive connectors formed on bond pads on the opposite side of the package substrate 220 (bottom side in FIG. 8) from the package component 210.

In FIGS. 9A and 9B, the back-side metal 212 is coated with a flux 214. In some embodiments, the flux 214 is a no-clean flux. The flux 214 may be jetted onto the back-side metal 212. As shown in the plan view of FIG. 9B, the flux 214 substantially covers the back-side metal 212 (within process variations). In another embodiment, the flux 214 does not substantially cover the back-side metal 212.

In FIG. 10, a thermal interface material (TIM) 232 is placed on the package component 210 using, e.g., a pick-and-place tool. In some embodiments, the TIM 232 is formed on a separate structure (e.g., a wafer or carrier) and then placed on the package component 210. The TIM 232 comprises indium, silver, tin, the like, or alloys thereof. The TIM 232 may have a thickness T₁in the range of 10 μm to 1000 μm, such as 100 μm. In some embodiments, the TIM 232 is thicker than the back-side metal 212. In some embodiments, the TIM 232 has a same width as the package component 210. In some embodiments, the TIM 232 may have a same area (in a plan view) as the package component 210. In other embodiments, the widths and areas of the TIM 232 and package component can be different (see, e.g., FIG. 15).

In FIG. 11, the TIM 232 is coated with a flux 234. In some embodiments, the flux 234 is a no-clean flux. The flux 234 may be jetted onto the TIM 232. Similar to the flux 214, the flux 234 substantially covers the TIM 232 (within process variations). In another embodiment, the flux 234 does not substantially cover the TIM 232.

In FIGS. 12A and 12B, an adhesive 216 and retaining structure 218 are formed on the package substrate 220. The adhesive 216 is used to subsequently adhere a lid 230 (see FIG. 13) to the package substrate 220. The retaining structure 218 is used to retain any subsequent bleeding or reflow of the TIM 232 to prevent it from reaching, for example, the passive devices 226. The adhesive 216 may be a thermal interface material (TIM), a die attach film (DAF), or the like, and may be dispensed on the package substrate. For example, the adhesive 216 may be a gel with a polymeric material and a filler. The polymeric material of the gel may be PI, PBO, an epoxy base polymer, a silica base polymer, an acrylic base polymer, the like, or a combination thereof. The filler of the gel may include aluminum, copper, tin, boron nitride, the like, or a combination thereof.

In some embodiments, the retaining structure 218 may be formed simultaneously and of a same material as the adhesive 216. In some embodiments, the retaining structure may be formed of a different material than the adhesive 216. The retaining structure 218 may be dispensed on the package substrate 220, the underfill 228, and/or the package component 210. In some embodiments, the retaining structure 218 is formed on sidewalls of the package component 210 and on sidewalls and top surface of the TIM 232. In some embodiments, the retaining structure is spaced apart from the package component 210 (see, e.g., FIGS. 16-19). In retaining structure 218 may formed on the underfill 228. In some embodiments, the retaining structure 218 fully covers the underfill 228 outside of the package component 210, and in other embodiments, the retaining structure 218 only partially covers the underfill 228.

In some embodiments, the retaining structure 218 is formed to have a top surface higher than a top surface of the TIM 232, and in other embodiments, the top surface of the retaining structure 218 is formed to be lower than the top surface of the TIM 232. As seen in FIG. 12B, the retaining structure 218 may surround the package component 210 and the adhesive 216 may be formed along the edge of the package substrate 220.

Although the retaining structure 218 is shown with planar and parallel sidewalls, the disclosure is not limited to the illustrate shape of retaining structure 218. For example, the retaining structure 218 may have curved, bent, diagonal, and/or unparallel sidewalls.

In FIG. 13, a lid 230—with an optional back-side metal 236—is attached to the TIM 232 and the package substrate 220. The lid 230 may be a thermal lid, a heatsink, or the like. In the illustrated embodiment, the lid 230 is a thermal lid which is also attached to the package substrate 220. A recess is in the bottom of the thermal lid so that the thermal lid can cover the package component 210 and the TIM 232. In some embodiments where the lid 230 is a thermal lid, the thermal lid can also cover the passive devices 226. As illustrated in FIG. 13, the retaining structure 218 may physically contact the lid 230. The retaining structure 218 will prevent the material of the TIM 232 from subsequently bleeding onto the package substrate and/or onto the passive devices 226.

The lid 230 may be formed of a material with high thermal conductivity, such as a metal, such as copper, nickel, indium, steel, iron, or the like. In some embodiment, the lid 230 is formed of copper, nickel, and indium. The lid 230 protects the package component 210 and forms a thermal pathway to conduct heat from the various components of the package component 210 (e.g., the integrated circuit dies 50). The lid 230 is thermally coupled to the back-side surface of the package component 210, e.g., a back-side surface of the back-side metal 212, by the TIM 232 and the optional back-side metal 236. The back-side metal 236 may be similar to the back-side metal 212 described above and the description is not repeated herein. The back-side metal 236 may be formed on the flux 234 or on the lid 230 before the lid is attached.

In some embodiments, the lid 230 is attached and the TIM 232 is bonded in a multi-step process. After the multi-step process, the TIM 232 may have a thickness T₂which is smaller than its thickness T₁after being placed on the package component 210. In a first process step, the lid is attached to the TIM 232 and the package substrate 220 by using a thermal clamping process. In some embodiments, the thermal clamping process involves heating the structure while applying force to the lid 230 and/or the package substrate 220. In the thermal clamping process, the heating temperature is less than the melting temperature of the metal of the TIM 232. For example, if the TIM 232 is made of indium, which has a melting temperature of 156.6° C., the heating temperature of the thermal clamping process will be kept below 156.6° C.

In a second process step, the TIM 232 is bonded or joined with the back-side metal 212/236 and the lid 230. This second process step involves heating the structure to a temperature greater than the melting temperature of the metal of the TIM 232. For example, if the TIM 232 is made of indium, which has a melting temperature of 156.6° C., the heating temperature of the thermal clamping process will get above 156.6° C. In some embodiments, this second process step also involves a thermal clamping process including heating the structure while applying force to the lid 230 and/or the package substrate 220. In some embodiments, all of the steps of the multi-step process of attaching the lid 230 and bonding the TIM 232 is performed in the same process chamber without breaking the ambient of the chamber.

By having the retaining structure 218, any subsequent bleeding or reflow of the metal (e.g., indium) the TIM 232—during the thermal clamp, reflow, or normal operation of the package—is contained. This containment prevents the metal overflow from shorting package components and from voids being formed in the TIM 232, which can improve the reliability and performance of the packages.

Other features and processes may also be included. For example, testing structures may be included to aid in the verification testing of the 3D packaging or 3DIC devices. The testing structures may include, for example, test pads formed in a redistribution layer or on a substrate that allows the testing of the 3D packaging or 3DIC, the use of probes and/or probe cards, and the like. The verification testing may be performed on intermediate structures as well as the final structure. Additionally, the structures and methods disclosed herein may be used in conjunction with testing methodologies that incorporate intermediate verification of known good dies to increase the yield and decrease costs.

FIG. 14 illustrates an optional step of clamp curing the package 200. In some embodiments, the clamp curing process can replace the second step of the above-described multi-step process in FIG. 13. As illustrated in FIG. 14, the package 200 is placed inside a clamp 250 and heat may be applied to the package 200. In some embodiments, the clamp curing process involves heating the structure to a temperature greater than the melting temperature of the metal of the TIM 232. For example, if the TIM 232 is made of indium, which has a melting temperature of 156.6° C., the heating temperature of the thermal clamping process will get above 156.6° C. In some embodiments, this second process step also involves a thermal clamping process including heating the structure while applying force to the lid 230 and/or the package substrate 220.

FIG. 15 illustrates a cross-sectional view of an integrated circuit package 200, in accordance with some other embodiments. This embodiment is similar to the embodiments described in FIGS. 1-14, except that the width of the TIM 232 is smaller than the package component 210 and the retaining structure 218 extends to overly a top surface of the encapsulant 136 and back-side metal 212. In some embodiments, the TIM 232 may be formed to have a width W₂that is smaller than a width W₁of the package component 210.

FIGS. 16-19 are views of intermediate stages in the manufacturing of integrated circuit packages 200, in accordance with some other embodiments. This embodiment is similar to the embodiment described for FIGS. 1-14, except that the retaining structure 218 does not contact the package component 210 but is spaced apart from the package component 210. The space between the retaining structure 218 and the package component 210 can form a void after the lid 230 is attached. This void can contain the reflowed metal of the TIM 232.

In FIG. 16 is at a similar point of process as FIG. 11 and the description for achieving this stage of processing is not repeated herein.

In FIGS. 17A and 17B, the retaining structure 218 and the adhesive 216 are formed on the package substrate 220. The materials and processes of the retaining structure 218 and the adhesive 216 may be similar to those described above in FIGS. 12A and 12B.

In this embodiment, the retaining structure 218 is spaced apart from the package component 210. Although the retaining structure 218 is shown to have a top surface higher than a top surface of the TIM 232, in other embodiments, the top surface of the retaining structure 218 may be lower than the top surface of the TIM 232. Similar to the description of FIG. 12B, in FIG. 17B, the retaining structure 218 may surround the package component 210 and the adhesive 216 may be formed along the edge of the package substrate 220.

In FIG. 18, the lid 230—with the optional back-side metal 236—is attached to the TIM 232 and the package substrate 220. The retaining structure 218 forms a void 238 between the package component 210 and the retaining structure 218. As illustrated in FIG. 13, the retaining structure 218 may physically contact the lid 230 such that the lid 230 forms a surface of the void 238. The void 238 formed by retaining structure 218 will contain the material of the TIM 232 after the metal of the TIM 232 is melted (see, e.g., FIG. 19).

In FIG. 19, the structure of FIG. 18 undergoes the multi-step attaching and bonding process described above in FIG. 13 causing an overflow 232′ of the TIM 232 onto the sides of the package component 210 and the underfill 228 and onto the package substrate 220. Although FIG. 19 illustrates the overflow 232′ substantially filling the void 238, in some embodiments, the void 238 is only partially filled.

By having the voids 238 formed by the retaining structure 218, any subsequent bleeding or reflow of the metal (e.g., indium) the TIM 232—during the thermal clamp, reflow, or normal operation of the package—is contained. This containment prevents the metal overflow from shorting package components and from voids being formed in the TIM 232, which can improve the reliability and performance of the packages

Embodiments may achieve advantages. In some embodiments, after the package components attached to the package substrates, heat dissipation structures are attached to the package components. A retaining structure (e.g., a retaining wall) may be formed on the package substrate adjacent the package components and the heat dissipation structure. A lid may then be attached over the heat dissipation structure and the retaining structure followed by a heat clamping and/or a reflow process to attach the lid and/or the heat dissipation structure. By having a retaining structure, any subsequent bleeding or reflow of the metal (e.g., indium) the heat dissipation structure—during the heat clamp, reflow, or normal operation of the package—is contained. This containment prevents the metal overflow from shorting package components and from voids being formed in the heat dissipation structure, which can improve the reliability and performance of the packages.

In an embodiment, a device includes a package component including an integrated circuit die and conductive connectors connected to the integrated circuit die, the conductive connectors disposed at a first side of the package component. The device also includes a metal layer on a second side of the package component, the second side being opposite the first side. The device also includes a thermal interface material on the metal layer. The device also includes a lid on the thermal interface material. The device also includes a retaining structure on sidewalls of the package component and the thermal interface material. The device also includes a package substrate connected to the conductive connectors, the lid being adhered to the package substrate.

Embodiments may include one or more of the following features. The device where the retaining structure extends over a top surface of the package component. The thermal interface material is made of indium. Retaining structure physically contacts the lid. The thermal interface material is thicker than the back-side metal layer. The device further including an underfill between the package substrate and the package component, the retaining structure physically contacting the underfill. The package component is a chip-on-wafer package component. The retaining structure includes a polymeric material and a filler material. The device further including an adhesive adhering the lid to the package substrate, the adhesive and the retaining structure having a same material composition.

In an embodiment, a method includes packaging an integrated circuit die in a package region of a wafer. The method also includes depositing a back-side metal layer on a back-side of the integrated circuit die. The method also includes singulating the package region from the wafer to form a package component. The method also includes after singulating the package region, connecting the package component to a package substrate. The method also includes placing a thermal interface material on the back-side metal layer. The method also includes dispensing a retaining structure adjacent the package component and the thermal interface material. The method also includes attaching a lid to the package substrate, the lid being coupled to the thermal interface material. The method also includes performing a bonding process to bond the thermal interface material to the back-side metal layer and the lid, the bonding process being performed at a temperature greater than the melting point of the thermal interface material.

Embodiments may include one or more of the following features. The method where the retaining structure physically contacts the package component. The retaining structure is spaced apart from the package component. After performing the bonding process, an overflow portion of the thermal interface material extends on sidewalls of the package component. After performing the bonding process, an overflow portion of the thermal interface material extends on sidewalls of the underfill. The retaining structure physically contacts the lid. The method further including after placing a thermal interface material on the back-side metal layer and before attaching a lid 230 to the package substrate, dispensing an adhesive layer on a top surface the package substrate, the adhesive layer adhering the lid to the package substrate. The adhesive and the retaining structure have a same material composition.

In an embodiment, a method includes bonding a plurality of integrated circuit dies to a wafer in a package region of the wafer. The method also includes encapsulating the plurality of integrated circuit dies with a molding compound. The method also includes forming a back-side metal layer on the molding compound and back-sides of the plurality of integrated circuit dies. The method also includes singulating the package region from the wafer to form a package component. The method also includes bonding the package component to a package substrate. The method also includes depositing a first flux on back-sides of the integrated circuit dies of the bonded package component. The method also includes attaching a thermal interface material to the first flux, the thermal interface material including indium. The method also includes forming a retaining structure adjacent the package component and the thermal interface material. The method also includes attaching a lid to the package substrate, the thermal interface material and the retaining structure being coupled to the lid.

Embodiments may include one or more of the following features. The method further including performing a bonding process to bond the thermal interface material to the back-side metal layer and the lid, the bonding process being performed at a temperature greater than the melting point of the thermal interface material, where after performing the bonding process, an overflow portion of the thermal interface material extends on sidewalls of the package component. The retaining structure physically contacts the package component.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME

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